Abstract: A method of making a nonvolatile memory device includes fabricating a diode in a low resistivity, programmed state without an electrical programming step. The memory device includes at least one memory cell. The memory cell is constituted by the diode and electrically conductive electrodes contacting the diode.

Abstract: An arrangement of nonvolatile memory devices, having at least one memory device level stacked level by level above a semiconductor substrate, each memory level comprising an oxide layer substantially disposed above a semiconductor substrate, a plurality of word lines substantially disposed above the oxide layer; a plurality of bit lines substantially disposed above the oxide layer; a plurality of via plugs substantially in electrical contact with the word lines and, an anti-fuse dielectric material substantially disposed on side walls beside the bit lines and substantially in contact with the plurality of bit lines side wall anti-fuse dielectrics.

Abstract: A method of forming an antifuse forms a material layer and then patterns the material layer into a fin. The center portion of the fin is converted into a substantially non-conductive region and the end portions of the fin into conductors. The process of converting the center portion of the fin into an insulator allows a process of heating the fin above a predetermined temperature to convert the insulator into a conductor. Thus, the fin-type structure that can be selectively converted from an insulator into a permanent conductor using a heating process.

Abstract: An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).

Abstract: A trimming circuit, an electronic circuit, and a trimming control system for reducing the risk of failures when perform trimming and for ensuring that a desired device is readily manufactured. A selector, a resistor, and a fuse are connected in series between a power supply and ground. A probe pad for performing probe trimming is connected immediately above the fuse. The selector includes two back-to-back connected n-type MOS transistors. Each n-type MOS transistor has a gate terminal connected to a selector control circuit. A trim sense circuit is arranged at a power supply side of the fuse. The trim sense circuit detects fuse breakage and changes the operation of an element associated with each trimming circuit TC based on the detection.

Abstract: An integrated circuit including a substrate of a semiconductor material and first metal portions of a first metallization level or of a first via level defining pixels of an image. The pixels are distributed in first pixels, for each of which the first metal portion is connected to the substrate, and in second pixels, for each of which the first metal portion is separated from the substrate by at least one insulating portion.

Abstract: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

Abstract: A laser fuse structure for a semiconductor device, the laser fuse structure having an array of laser fuses wherein one or more of the fuses in the array have a tortuous fuse line extending between first and second connectors that connect the fuse to an underlying circuit area.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least one via.

Abstract: A method of forming a fuse region in a semiconductor damascene process in which a specific layer is formed to prevent corrosion and re-connection of a severed part of the fuse region to prevent malfunction. A first conductive layer is formed over a substrate and an interlayer dielectric layer is deposited over the first conductive layer. A second conductive layer is buried in the interlayer dielectric layer by a dual damascene process to simultaneously form an interconnection and a fuse. The resultant structure is coated with a passivation layer. The fuse is cut to form a severed portion. A selective metal layer is deposited over the severed portion.

Abstract: An electrical fuse and a process of programming the same are presented. An electrical fuse comprises a lower level silicide layer on a non-doped or lightly-doped polysilicon layer, an upper level conductive layer, and a tungsten contact coupled between the lower level silicide layer and the upper level conductive layer. The tungsten contact and a neck portion of the silicide layer are the programmable portion of the electrical fuse. High post-programming resistance is achieved by a first programming phase that depletes silicide in the silicide layer, followed by a second programming phase that depletes tungsten in the tungsten contact.

Abstract: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

Abstract: There is provided a semiconductor chip having fuses. The semiconductor chip includes fuses each having a first terminal electrically connected to a first logic circuit, a second terminal electrically connected to a second logic circuit, and a blowable region formed between the first terminal and the second terminal; and fuse residues each having the same patterns with those of the first terminal and the second terminal of the fuses, and configured so that patterns corresponded to the first terminals and the second terminals are electrically disconnected from each other.

Abstract: A semiconductor device includes an interlayer insulating film on a substrate. A runner part includes a plurality of runner lines spaced apart from each other by a regular interval under the interlayer insulating film. A fuse cut part includes a plurality of fuse lines spaced apart from each other by a wider interval than the interval between the runner lines. A via in the interlayer insulating film connects a fuse line and a runner line to each other.

Abstract: Programmable devices, methods of manufacture thereof, and methods of programming devices are disclosed. In one embodiment, a programmable device includes a link and at least one first contact coupled to a first end of the link. The at least one first contact is adjacent a portion of a top surface of the link and at least one sidewall of the link. The programmable device includes at least one second contact coupled to a second end of the link. The at least one second contact is adjacent a portion of the top surface of the link and at least one sidewall of the link.

Abstract: A method of making a nonvolatile memory device includes fabricating a diode in a low resistivity, programmed state without an electrical programming step. The memory device includes at least one memory cell. The memory cell is constituted by the diode and electrically conductive electrodes contacting the diode.

Abstract: A semiconductor device comprises: a MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive type; a drain region, formed in the semiconductor substrate, that comprises an impurity of the first conductive type; and a gate electrode, formed through a gate insulating film on the semiconductor substrate, between the source region and the drain region; an impurity region of the first conductive type formed in the semiconductor substrate; an impurity region of a second conductive type to be opposite to the first conductive type formed in the semiconductor substrate; and a wiring provided to connect each of the impurity region of the first conductive type and the impurity region of the second conductive type to the gate electrode.

Abstract: A method is provided for forming patterned features using a conductive hard mask, where the conductive hard mask protects those features during a subsequent trench etch to form Damascene conductors providing electrical connection to those features from above. The thickness of the hard mask provides a margin to avoid overetch during the trench etch which may be harmful to device performance. The method is advantageously used in formation of a monolithic three dimensional memory array.

Abstract: The present invention relates to a thin film transistor (TFT) substrate and method of making such a TFT substrate. The structure of the TFT substrate helps prevent damage to signal lines in non-display areas.

Abstract: Electrically programmable fuse structures and methods of fabrication thereof are presented, wherein a fuse includes first and second terminal portions interconnected by an elongate fuse element. The first terminal portion has a maximum width greater than a maximum width of the fuse element, and the fuse includes a narrowed width region where the first terminal portion and fuse element interface. The narrowed width region extends at least partially into and includes part of the first terminal portion. The width of the first terminal portion in the narrowed region is less than the maximum width of the first terminal portion to enhance current crowding therein. In another implementation, the fuse element includes a restricted width region wherein width of the fuse element is less than the maximum width thereof to enhance current crowding therein, and length of the restricted width region is less than a total length of the fuse element.

Abstract: A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. A guard ring opening portion is formed using the etch stop layer. The guard ring opening portion is filled with a material for forming the uppermost wiring of multi-level interconnect wirings or the material of a passivation layer, thereby forming the guard ring concurrently with the uppermost interconnect wiring or the passivation layer. Accordingly, permeation of moisture through an interlayer insulating layer or the interface between interlayer insulating layers around the fuse opening portion can be efficiently prevented by a simple process.

Abstract: A CMOS image sensor formed on a chip has a ROM disposed on the chip for recording pixel defect locations, chip-by-chip variations such as bias, and other manufacturing production data. Testing results and repair solutions are written to the ROM after production testing. A simple circuit for writing information to the ROM also is provided on the CMOS chip. During operational use of the image sensor, data is read from the on-chip ROM to assist in compensating for manufacturing process variations.

Abstract: A silicide bridged anti-fuse and a method of forming the anti-fuse are disclosed. The silicide bridged anti-fuse can be formed with a tungsten plug metalization process that does not require any additional process steps. As a result, anti-fuses can be added to an electrical circuit as trim elements for no additional cost.

Abstract: A redundant fuse is provided with a redundant length, here a winding structure, at one end thereof, here at a vicinity of a second wire side to which a high voltage (Vcc) is impressed. A disconnected portion is provided between the other end side of the redundant fuse, here a second wire side which is on the ground potential (GND) and the winding structure.

Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT). A phase change material layer covers the heating electrode. A second conductive layer is formed on the phase change material layer, and electrically connected to the phase change material layer.

Abstract: An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a plurality areas defined laterally in the substrate through a bottom surface of the substrate; and a light source facing a top surface of the substrate, configured to irradiate a pulsed light at a pulse width of about 0.1 ms to about 100 ms on the entire top surface of the substrate.

Abstract: A repair fuse element and method of construction are disclosed that eliminate or substantially reduce the disadvantages and problems associated with prior fuse elements. In one embodiment, the fuse element is constructed with a rectangular-shaped contact. The contact is made long enough so that it makes contact at each end with a metal layer, but design rule spacing is still maintained between the connections with the metal layer. The overlapping areas between the rectangular contact and the metal layers are asymmetrical. Alternatively, these overlapping areas are smaller than the design rule overlap requirements. In a second embodiment, a fuse element is constructed with a plurality of rectangular-shaped contacts. As a result, a current value that is significantly lower than conventional fuse current values, can be used to melt such a contact or blow the fuse.

Abstract: A fuse structure includes a non-planar fuse material layer typically located over and replicating a topographic feature within a substrate. The non-planar fuse material layer includes an angular bend that assists in providing a lower severance current within the non-planar fuse material layer.

Abstract: The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.

Abstract: A semiconductor device may be created using multiple metal layers and a layer including programmable vias that may be used to form various patterns of interconnections among segments of metal layers. The programmable vias may be formed of materials whose resistance is changeable between a high-resistance state and a low-resistance state.

Abstract: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

Abstract: A programmable package with a fuse embedded therein, and fabrication method are provided. The fuse has first and second terminal ends joined by a central portion defining a fusible link. The ends include a portion of the first and second conductive layers, the central portion including a portion of the first conductive layer. The first layer may be electroless copper and the second layer may be electrolytic copper. The fuse may have a dog-bone or a bow tie shape. The method includes providing a substrate with a dielectric layer, and forming the fuse by depositing first conductive layer, forming and patterning second conductive layer over a portion of the first layer, and patterning first layer to form interconnects between areas of the second layer.

Abstract: A metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. An insulating layer is disposed above a lower metal interconnect layer. The insulating layer includes a via formed therethrough containing a tungsten plug in electrical contact with the lower metal interconnect layer. An antifuse material layer comprising amorphous carbon is disposed above the upper surface of the tungsten plug. The antifuse material layer is disposed between adhesion-promoting layers. A layer of a barrier metal, consisting of either tantalum or tantalum nitride, is disposed over the antifuse layer to form an upper electrode of the antifuse. An oxide or tungsten hard mask provides high etch selectivity and the possibility to etch barrier metals without affecting the dielectric constant value and mechanical properties of the antifuse.

Abstract: A thermally programmable memory has a programmable element (20) of a thermally programmable resistance preferably of phase change material, material and a blown antifuse (80) located adjacent to the programmable material. Such a blown antifuse has a dielectric layer (100) surrounded by conductive layers (90, 110) to enable a brief high voltage to be applied across the dielectric to blow a small hole in the dielectric during manufacture to form a small conductive path which can be used as a tiny electrical heater for programming the material. Due to the current confinement by the hole, the volume of the material that must be heated in order to switch to a highly-resistive state is very small. As a result the programming power can be low.

Abstract: A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

Abstract: A semiconductor device includes a semiconductor substrate, and an electrical fuse including a first conductor including a first cutting target region, and a second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on the semiconductor substrate, wherein a flowing-out region is formed of the first conductor flowing toward outside between the first cutting target region and the second cutting target region in a condition of cutting the electrical fuse.

Abstract: A semiconductor device includes a memory with a simple structure, an inexpensive semiconductor device, a manufacturing method and a driving method thereof. One feature is that, in a memory which has a layer including an organic compound as a dielectric, by applying a voltage to a pair of electrodes, the state change caused by the precipitous change in volume (such as bubble generation) is generated between the pair of electrodes. Short-circuiting between a pair of electrodes is promoted by acting force based on this state change. Concretely, a bubble generating area is provided in the memory element to generate a bubble between the first conductive layer and the second conductive layer.

Abstract: A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).

Abstract: In a fuse region of a semiconductor device, and a method of fabricating the same, the fuse region includes an interlayer insulating layer on a semiconductor substrate, a plurality of fuses on the interlayer insulating layer disposed in parallel with each other, a blocking layer on the interlayer insulating layer between each of the plurality of fuses and in parallel with the plurality of fuses, and a plurality of fuse grooves recessed into the interlayer insulating layer between each of the plurality of fuses and the blocking layer.

Abstract: A method for producing an electronic component, especially a memory chip, using a laser-induced correction to equalize an integrated circuit by means of at least one laser via in a layer at least partially covering the circuit. The component comprises a rewiring of the contact pads. The inventive method comprises the following steps: each laser via is closed by means of a separate covering layer which is to be applied locally; a rewiring extending between the local covering layers is created; the local covering layers are removed; and the laser-induced correction is carried out by means of the open laser vias.

Abstract: The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.

Abstract: An one-time programmable read only memory is provided. An N-type doping region and a first P-type doping layer are disposed in a P-type semiconductor substrate sequentially. A second P-type doping layer is disposed between the first P-type doping layer and the N-type doping region. The second P-type doping layer with higher doping level, which has a linear structure, is served as a bit line. An electrically conductive layer is disposed over the P-type semiconductor substrate. The electrically conductive layer also has a linear structure that crosses over the first P-type doping layer. The first N-type doping layer is disposed in the P-type semiconductor substrate between the electrically conductive layer and the first P-type doping layer. The arrangement of N-type and P-type doping layer is used to be selective diode device. An anti-fuse layer is disposed between the electrically conductive layer and the first N-type doping layer.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device comprises a fuse bank with a fuse window, a pad area with a pad window, and a composite passivation layer comprising a sacrificial dielectric layer and a final passivation layer. Both the fuse window and the pad window have a bottom portion and two sidewalls, and the composite passivation layer covers both the fuse bank and the pad area except for the bottom portions of the fuse bank and the pad area.

Abstract: A fuse structure includes an insulating structure, a fuse pattern, an insulating pattern and an insulating layer. The insulating structure has a fuse region and a wire region proximate the fuse region. The fuse pattern is on the fuse region. The insulating pattern has a first portion and a second portion. The first portion is located on the fuse region and covers a sidewall of the fuse pattern. The second portion is located on the wire region. The insulating layer is on the insulating pattern and the fuse pattern and has a height selected to limit spread of fractures of the fuse pattern generated by cutting of the fuse pattern.

Abstract: An E-ink display and method for repairing the same is provided. The method is for repairing a thin film transistor array substrate of the E-ink display. The thin film transistor array substrate having a plurality of pixel units is provided initially. Each of the pixel unit includes a thin film transistor and a pixel electrode. The thin film transistor has a gate electrode, a source electrode and a drain electrode. The gate electrode, the source electrode and the drain electrode are connected electrically to a scan line, a data line and the pixel electrode respectively. A portion of the pixel electrode is located above the data line. Next, a repairing portion is formed at the space between the data line and the pixel electrode. The repairing portion is utilized to electrically connect the pixel electrode and the data line.

Abstract: An E-ink display and method for repairing the same is provided. The method is for repairing a thin film transistor array substrate of the E-ink display. The thin film transistor array substrate having a plurality of pixel units is provided initially. Each of the pixel unit includes a thin film transistor and a pixel electrode. The thin film transistor has a gate electrode, a source electrode and a drain electrode. The gate electrode, the source electrode and the drain electrode are connected electrically to a scan line, a data line and the pixel electrode respectively. A portion of the pixel electrode is located above the scan line. Next, a repairing portion is formed at the space between the scan line and the pixel electrode. The repairing portion is utilized to electrically connect the pixel electrode and the scan line.

Abstract: Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) antifuse transistor serves as an electrically-programmable antifuse. In its unprogrammed state, the antifuse transistor is off and has a relatively high resistance. During programming, the antifuse transistor is turned on which melts the underlying silicon and causes a permanent reduction in the transistor's resistance. A sensing circuit monitors the resistance of the antifuse transistor and supplies a high or low output signal accordingly. The antifuse transistor may be turned on during programming by raising the voltage at its substrate relative to its source. The substrate may be connected to ground through a resistor. The substrate may be biased by causing current to flow through the resistor. Current may be made to flow through the resistor by inducing avalanche breakdown of the drain-substrate junction or by producing Zener breakdown of external Zener diode circuitry connected to the resistor.

Abstract: A semiconductor device comprises a multiple insulation layer structure in which multiple insulation layers each having interconnection layer are built up and either one of the interconnection layer forming a fuse is blown in order to select a spare cell to relieve a defective cell; and an opening area corresponding to said fuse, the opening being formed on one or more insulation layers disposed above the layer which includes the fuse, wherein a side wall position corresponding to the opening of the first protective insulation film formed on the top layer of the multiple layers and a side wall position corresponding to the opening of the second protective insulation film formed on the first protective insulation film are continuous at the boundary thereof.

Abstract: A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Abstract: A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes stresses on the crystalline body, such as an oxide. The body may be doped, and may also include a silicide layer on the upper surface. This fuse structure may be successfully programmed over a wide range of programming voltages and time.