Abstract: A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of the microphone capacitor, and an arrangement for detecting and analyzing the capacitance changes of the microphone capacitor. The diaphragm is realized in a diaphragm layer above the semiconductor substrate of the component and covers a sound opening in the substrate rear. The counter element is developed in a further layer above the diaphragm. This further layer generally extends across the entire component surface and compensates level differences, so that the entire component surface is largely planar according to this additional layer.

Abstract: A packaged microphone has a base, a lid coupled to the base forming an interior, a MEMS microphone secured to the base within the interior, and an integrated circuit embedded in the base. Apertures in the base and integrated circuit are aligned to form an aperture from the exterior of the package to the interior.

Abstract: An electronic component includes: a semiconductor element including a circuit; a vibration element; a first electrode arranged on a first surface of the semiconductor element and connected to the circuit and the vibration element arranged on the first surface side; a second electrode arranged on the first surface; a first wiring board including a first wire connected to the second electrode; and a second wiring board including a second wire to which the first wire is connected At least a part of an inner side region of an outer contour of the vibration element is arranged to overlap the second electrode in plan view facing the first surface.

Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

Abstract: An electromechanical element includes a mechanically movable element through a hollow formed on a substrate, and a plurality of holes formed in the movable element. In the electromechanical element, the plurality of holes are arranged such that at least two holes are in a same line, at least one hole is in another line located adjacent to the one line with at least two holes, and a distance between one of the holes arranged in the same line and the other hole located at the closest position from the one of the two holes arranged in the same line is longer than a distance between the holes adjacently arranged in the same line.

Abstract: A sensor device for sensing air flow speed at the exterior of an aircraft, comprising a substrate having an upper side on which is mounted a diaphragm over an aperture or recess in the substrate, the diaphragm being thermally and electrically insulative, and mounting on its upper surface a heating element comprising a layer of resistive material, and wherein electrical connections to the heating element are buried in the diaphragm and/or the substrate, and provide electrical terminals at the lower side of the substrate. The heating element is exposed to the environment, but the remaining electrical parts of the device are not exposed.

Abstract: A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

Abstract: A capacitive electromechanical transducer includes a substrate, a cavity formed by a vibrating membrane held above the substrate with a certain distance between the vibrating membrane and the substrate by supporting portions arranged on the substrate, a first electrode whose surface is exposed to the cavity, and a second electrode whose surface facing the cavity is covered with an insulating film, wherein the first electrode is provided on a surface of the substrate or a lower surface of the vibrating membrane and the second electrode is provided on a surface of the vibrating membrane or a surface of the substrate so as to face the first electrode. In this transducer, fine particles composed of an oxide film of a substance constituting the first electrode are arranged on the surface of the first electrode, and the diameter of the fine particles is 2 to 200 nm.

Abstract: In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Abstract: A method of fabricating a microelectromechanical system (MEMS) device includes providing a semiconductor substrate having a semiconductor layer and an interconnect structure. A passivation layer and a photoresist layer are formed over the interconnect structure and a plurality of openings are formed in the photoresist layer to expose portions of the passivation layer. The passivation layer exposed by the openings and the interconnect structure thereunder are removed, forming a plurality of first trenches. The semiconductor layer exposed by the first trenches is removed, forming a plurality of second trenches in the semiconductor layer. An upper capping substrate is provided over the passivation layer, forming a first composite substrate. The semiconductor layer in the first composite substrate is thinned and portions of the thinned semiconductor layer are etched to form a third trench, wherein a suspended micromachined structure is formed in a region between the first, second and third trenches.

Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.

Abstract: A MEMS microphone has a backplate and a movable diaphragm that together form a variable capacitance. The backplate has a backplate surface and, in a corresponding manner, the diaphragm has a diaphragm surface that faces the backplate surface. At least one of the backplate surface and the diaphragm surface has at least a portion with a Hurst exponent that is less than or equal to about 0.5.

Abstract: A MEMS switch with a platinum-series contact is capped through a process that also passivates the contact by controlling, over time, the amount of oxygen in the environment, pressures and temperatures. Some embodiments passivate a contact in an oxygenated atmosphere at a first temperature and pressure, before hermetically sealing the cap at a higher temperature and pressure. Some embodiments hermetically seal the cap at a temperature below which passivating dioxides will form, thus trapping oxygen within the volume defined by the cap, and later passivate the contact with the trapped oxygen at a higher temperature.

Abstract: The present invention is directed to a system that programmably interconnects integrated circuit chips and other components at near-intra-chip density. The system's contact structure allows it to adapt to components with a wide variety of contact spacings and interconnection requirements, the use of releasable attachment means allows component placement to be modified as needed, the system identifies the contacts and the components to facilitate specifying the inter-component connections, and the system provides signal conditioning and retiming to minimize issues with signal integrity and signal skew.

Abstract: A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.

Abstract: A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).

Abstract: The present invention discloses a micro-electro-mechanical system (MEMS) device, comprising: a substrate with at least one opening; and a membrane supported on the substrate, the membrane including at least two thin segments and a thick segment connected together, wherein the two thin segments are not at the same level, and the thick segment is formed by a plurality of layers including at least two metal layers and a via layer, such that the membrane has a curve cross section.

Abstract: A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips 1 in which a plurality of cells each having functions of transmitting and receiving ultrasonic waves are formed on a front surface of a first semiconductor wafer are manufactured, and each of the first chips 1 is judged as a superior/inferior product, and then, the first semiconductor wafer is sigulated into a plurality of first chips 1. Next, a plurality of second chips 2 in which a wiring layer is formed on a front surface of a second semiconductor wafer are manufactured, and each of the second chips 2 is judged as a superior/inferior product, and then, the second semiconductor wafer is sigulated into a plurality of second chips 2.

Abstract: In the present invention, a semiconductor substrate wherein a plurality of MEMS microphones is formed is disposed opposed to a discharge electrode in a state of being stuck on a sheet. Electretization of a dielectric film provided in the MEMS microphone is performed by irradiating the dielectric film between a fixed electrode and a vibration film provided in the MEMS microphone with ions resulting from a corona discharge of the discharge electrode in a state that a predetermined potential difference is applied to the fixed electrode and the vibration film and fixing charges based on the ions to the dielectric film. The electretization is successively performed to each MEMS microphone on the semiconductor substrate by relatively moving the semiconductor substrate and the discharge electrode. Therefore, electretization of the dielectric film in the MEMS microphone chip is realized using a low-cost and simple fabricating equipment and productivity can be enhanced.

Abstract: A contact stress sensor includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a thermal compensator and a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element.

Abstract: A micro-electromechanical systems (MEMS) transducer device mounted to a package substrate includes an active transducer having a resonator stack formed over a cavity through a transducer substrate, and a stress mitigation structure between the transducer substrate and the package substrate. The stress mitigation structure reduces stress induced on the transducer substrate due to mismatched coefficients of thermal expansion (CTEs) of the transducer substrate and the package substrate, respectively.

Abstract: To provide a converter module easily achieving miniaturization and profile reduction without decreasing the pressure detection sensitivity. The converter module includes: a converter which converts vibration of a diaphragm into an electric signal; and a semiconductor substrate which processes the electric signal obtained as a result of the conversion performed by the converter. The converter includes: a base including a cavity part having an opening in a front surface of the base; and the diaphragm which is arranged on the front surface to cover the opening of the cavity part and converts the vibration into the electric signal. The semiconductor substrate is formed as a part of the base.

Abstract: A capacitive sensor includes a substrate, at least one first electrode, at least one second electrode, a sensing device, at least one anchor base, at least one movable frame, and a plurality of spring members. The first and second electrodes are disposed on the substrate, and the anchor base surrounds the first and second electrodes and is disposed on the substrate. The movable frame surrounds the sensing device. Some of the spring members connect the movable frame and the sensing device, and the other spring members connect the movable frame and the anchor base. The sensing device and the first electrode are both sensing electrodes. The movable frame is disposed above the second electrode, and cooperates with the second electrode to act as a capacitive driver.

Abstract: A micro-electro-mechanical transducer (such as a cMUT) having a non-flat surface is disclosed. The non-flat surface may include a variable curve or slope in an area where a spring layer contacts a support, thus making a variable spring model as the spring layer vibrates. The non-flat surface may be that of a non-flat electrode optimized to compensate the dynamic deformation of the other electrode during operation and thus enhance the uniformity of the dynamic electrode gap during operation. Methods for fabricating the micro-electro-mechanical transducer are also disclosed. The methods may be used in both conventional membrane-based cMUTs and cMUTs having embedded springs transporting a rigid top plate.

Abstract: System, devices and methods are presented that integrate stretchable or flexible circuitry, including arrays of active devices for enhanced sensing, diagnostic, and therapeutic capabilities. The invention enables conformal sensing contact with tissues of interest, such as the inner wall of a lumen, a the brain, or the surface of the heart. Such direct, conformal contact increases accuracy of measurement and delivery of therapy. Further, the invention enables the incorporation of both sensing and therapeutic devices on the same substrate allowing for faster treatment of diseased tissue and fewer devices to perform the same procedure.

Abstract: An embodiment relates to a device integrated on a semiconductor substrate of a type comprising at least one first portion for the integration of at least one microfluidic system, and a second portion for the integration of an additional circuitry. The microfluidic system comprises at least one cavity realized in a containment layer of the integrated device closed on top by at least one portion of a polysilicon layer, this polysilicon layer being a thin layer shared by the additional circuitry and the closing portion of the cavity realizing a piezoresistive membrane for the microfluidic system.

Abstract: A method of forming a microstructure body and a semiconductor element for controlling the microstructure body over the same substrate to reduce manufacturing cost, for mass-production of micromachines having a microstructure. In manufacturing a micromachine, a sacrifice layer is formed using a mask material for forming a pattern of a film, and removal of the mask in a region for forming a semiconductor element and removal of the sacrifice layer and the mask in a region for forming a microstructure body are performed by the same step. Specifically, a manufacturing method of a micro-electro-mechanical device is provided wherein a sacrifice layer is selectively formed over an insulating substrate, a semiconductor layer is formed to cover the sacrifice layer, a mask is formed over the semiconductor layer, the semiconductor layer is etched using the mask, and the mask and the sacrifice layer are removed by the same step.

Abstract: A method for fabricating a multilayer microstructure with balancing residual stress capability includes forming a multilayer microstructure on a silicon substrate and conducting a step of isotropic plasma etching. The multilayer microstructure includes a first metal layer and a second metal layer patterned and aligned symmetrically to form etching through holes; a metal via layer surrounding each etching through hole; and an insulating layer filling each etching through hole and disposed between the substrate and the first metal layer. The step of isotropic chemical plasma etching removes the insulating layer in each etching through hole, the insulating layer between the substrate and the metal layer and a portion of the substrate to form a suspended multilayer microstructure on the substrate, during which a chamber pressure larger than vacuum and maintains a ratio between a lateral etching rate and a vertical etching rate between 0.

Abstract: A micro electro mechanical systems (MEMS) microphone, and a method of manufacturing the MEMS microphone having an interval between a membrane and a back plate, the interval being correctly adjusted by forming the membrane and the back plate after an air-gap forming portion on a silicon substrate. Since the membrane and/or the back plate are/is formed by electroless plating, a sacrificial layer is easily planarized, and a residual stress is easily removed or controlled. The MEMS microphone includes a silicon substrate in which a back chamber is formed and on which an air-gap forming portion is formed above the chamber by etching the silicon substrate to a predetermined depth above the chamber; a membrane formed on the air-gap forming portion of the silicon substrate or the silicon substrate; and a back plate that is formed on the air-gap forming portion or the silicon substrate so as to be spaced apart from the membrane, wherein an air gap is formed between the membrane and the back plate.

Abstract: Disclosed is a wireless self-powered monolithic integrated capacitive sensor, as well as methods of manufacturing same. A single monolithic chip may include various technologies, including RF MEMS, CMOS devices and related circuitry, and physical sensor MEMS. An example pressure sensor is disclosed, including a sensing capacitor and a reference capacitor that together allow the system to provide steady output in various environmental conditions. In one embodiment a pre-fabricated circuit wafer is fusion bonded to a pre-fabricated diaphragm wafer. Doped silicon may form the monolithic structure to provide the voltage necessary to run the system.

Abstract: A method of forming a micro-electro mechanical system (MEMS), includes (1) removing material from a first wafer to define a first movable portion corresponding to an x-y accelerometer and a second movable portion corresponding to a z accelerometer, where each movable portion comprises at least one flexure member and at least one proof mass, each proof mass and flexure member being formed by the selective removal of material from a top side and a bottom side of first wafer; (2) bonding the first wafer to a second wafer comprising an electronic circuit, such that a gap is defined between the first wafer and the second wafer. The thickness of the at least one flexure member of the first movable portion is independent of a thickness of the at least one flexure member of the second movable portion and a thickness of the proof mass of the first movable portion is independent of a thickness of the at least one proof mass of the second movable portion.

Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.

Abstract: A micromechanical component includes a substrate that has a front side and a backside, the front side having a functional pattern, which functional pattern is electrically contacted to the backside in a contact region. The substrate has at least one contact hole in the contact region, which extends into the substrate, starting from the backside.

Abstract: Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.

Abstract: A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate has a dielectric layer thereon. Next, at least one metal interconnect layer is formed on the dielectric layer in the logic region, and at least one micro-machined metal mesh is simultaneously formed in the dielectric layer of the MEMS region. Therefore, the thickness of the MEMS microphone structure can be effectively reduced.

Abstract: The present invention discloses an MEMS sensor and a method for making the MEMS sensor. The MEMS sensor according to the present invention includes: a substrate including an opening; a suspended structure located above the opening; and an upper structure, a portion of which is at least partially separated from a portion of the suspended structure; wherein the suspended structure and the upper structure are separated from each other by a step including metal etch.

Abstract: A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate has a dielectric layer thereon. Next, at least one metal interconnect layer is formed on the dielectric layer in the logic region, and at least one micro-machined metal mesh is simultaneously formed in the dielectric layer of the MEMS region. Therefore, the thickness of the MEMS microphone structure can be effectively reduced.

Abstract: A triaxial force sensor including: a deformable membrane; a detector detecting a deformation of the membrane configured to carry out a triaxial detection of the force to be detected; and an adhesion mechanism disposed at least at one of the principal faces of the deformable membrane, configured to secure the one of the principal faces of the deformable membrane to at least one elastomer material to be acted upon by the force to be detected, and distributed uniformly at a whole of the surface of the one of the principal faces of the deformable membrane, the deformable membrane being disposed between a cavity and the elastomer material.

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract: A solid-state image pickup apparatus includes a substrate, a solid-state image pickup device, and a Micro Electro Mechanical Systems (MEMS) device. The solid-state image pickup device and the MEMS device are configured to be formed on the same substrate.

Abstract: In an acoustic sensor, a diaphragm arranged on an upper side of a silicon substrate includes a back chamber, and an anchor supports the diaphragm. An insulating plate portion fixed to an upper surface of the silicon substrate covers the diaphragm with a gap. A conductive fixed electrode film arranged on a lower surface of the plate portion configures a back plate. The change in electrostatic capacitance between the fixed electrode film and the diaphragm outputs to the outside from a fixed side electrode pad and a movable side electrode pad as an electric signal. A protective film is arranged continuously with the plate portion at an outer periphery of the plate portion. The protective film covers the outer peripheral part of the upper surface of the silicon substrate, and the outer periphery of the protective film coincides with the outer periphery of the upper surface of the silicon substrate.

Abstract: The present invention provides three-dimensional force input control devices for use in sensing vector forces and converting them into electronic signals for processing, and methods of fabricating three-dimensional force input control devices for sensing vector forces and converting them into electronic signals for processing. In some embodiments, methods of fabricating provide a semiconductor substrate having a side one and a side two; fabricate stress-sensitive IC components and signal processing IC on side one of the substrate; fabricate closed trenches on side two of the substrate, the trenches forming boundaries defining elastic elements, frame areas, and rigid islands, and remove additional substrate material from side two of the substrate in the frame area leaving the dimension of the rigid island protruding outward from side two.

Abstract: A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

Abstract: A backplateless silicon microphone and a wire protection method for improved impact resistance are disclosed. A circular diaphragm is surrounded by a circular spring having a plurality of slots and perforations to facilitate air damping reduction, release of in-plane stress, and improve out-plane flexibility. Anchored at a substrate, the circular spring holds the silicon microphone suspended over a backside hole in the substrate but allows the diaphragm to vibrate perpendicular to the substrate. A microphone variable capacitor is formed between the perforated spring and substrate. Slot size is minimized to prevent particles from entering an underlying air gap. A plurality of “n” bonding pads near the outer edge of the circular spring are connected by “n/2” bonding wires that serve as a stopper to restrict an upward motion of the diaphragm. The bonding wires may cross each other to enable lower loop height for more effective resistance to impact.

Abstract: One embodiment of a microelectronic component system includes a base adapted for supporting a microelectronic component, a membrane sealed to the base, and a glass lid built-up on the membrane and hermetically sealing the membrane.

Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer, wherein the first layer is formed or provided by hydrogen ion delamination of a starting wafer. The method further includes doping the first layer to form a piezoresistive film and etching the piezoresistive film to form at least one piezoresistor. The method also includes depositing or growing a metallization layer on the semiconductor-on-insulator wafer, the metallization layer including an electrical connection portion that is located on or is electrically coupled to the piezoresistor. The method includes removing at least part of the second semiconductor layer to form a diaphragm, with the at least part of the piezoresistor being located on the diaphragm, and joining the wafer to a package by melting a high temperature braze material or a glass frit material.

Abstract: The disclosure is generally directed to fabrication steps, and operation principles for microelectromechanical (MEMS) transducers. In one embodiment, the disclosure relates to a texture morphing device. The texture morphing device includes: a plurality of supports arranged on a substrate to support a deformable mirror; an ITO layer; and a Distributed Bragg Reflector (DBR) layer. A pair of adjacent supports form a cavity with the ITO layer and the deformable mirror. When the height of the cavity changes responsive to an external pressure, the internal reflection within the cavity is changed. The change in the height of the cavity causes the exterior texture to morph. Similar principles are disclosed for constructing sensor and actuators.

Abstract: An electrical connection device and assembly method thereof includes a substrate with a plurality of contacting portions arranged on a surface thereof; a chip module having a plurality of terminals inclining in one direction and compressed and contacted with the contacting portions correspondingly; at least one restricting structure which restricts the chip module to move a distance relative to the substrate depending on the compression deformation of the terminals when the terminals are contacted with the contacting portions; and at least one elastic element just producing deformation when the chip module moves the distance. When the terminals are compressed and contacted with the contacting portions, the restricting structure restricts the chip module to move the distance depending on the compression deformation of the terminals, so that the elastic element just produces deformation, which make the chip module only move in the direction opposite to the deformation direction of the terminals.

Abstract: The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)?1??(1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure.

Abstract: A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.