Responsive To Corpuscular Radiation (e.g., Nuclear Particle Detector, Etc.) Patents (Class 438/56)
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Patent number: 10784382Abstract: A PIN diode has an anode spaced away from a central region of a top surface of a substrate, such that the anode is in a corner or at a side edge of the top surface. Alternatively, the PIN diode has an anode surrounded by a shield layer. The PIN diode reduces unwanted parasitic capacitance to increase the reverse isolation of RF switches and to reduce the diffusion capacitance to increase the f3dB frequency specification of amplifier circuits. The PIN diode dramatically reduces the values of both parasitic and diffusion capacitances, which enables its application in switches and amplifiers under a wide variety of bias conditions including reverse, low-moderate forward, and large forward-bias; which enables bonding to a much larger metal area than the active electrode, with negligible increase in the parasitic capacitance; and which enables reliable wire-bonding by presenting a highly planar metal surface.Type: GrantFiled: August 13, 2018Date of Patent: September 22, 2020Inventors: Ashok T. Ramu, Robert J. Bayruns, Michel Francois
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Patent number: 9810794Abstract: Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate.Type: GrantFiled: June 22, 2015Date of Patent: November 7, 2017Assignee: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. Dahal, Ishwara B. Bhat, Yaron Danon, James Jian-Qiang Lu
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Patent number: 9276186Abstract: A method for manufacturing a light-emitting device is provided, including: providing a base, which includes a heat dissipation layer made of graphene; forming a buffer layer on the heat dissipation layer; and forming a light emission unit on the buffer layer. The light-emitting device so made includes a graphene-made heat dissipation layer that effectively dissipates away heat emitting from an emissive layer of the light emission unit so as to effectively reduce the temperature of the light-emitting device and extend the service life of the light-emitting device. Particularly, when the light-emitting device is a light-emitting diode, the emissive layer thereof is a quantum dot emissive layer for effectively improving color saturation of the light-emitting diode and enhancing color displaying performance of the light-emitting diode.Type: GrantFiled: June 6, 2015Date of Patent: March 1, 2016Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.Inventors: Chong Huang, Yuchun Hsiao, Guofu Tang
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Patent number: 9023681Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.Type: GrantFiled: September 25, 2013Date of Patent: May 5, 2015Assignee: Chint Solar (Zhejiang) Co., Ltd.Inventors: Xinwei Niu, Cao Yu, Lan Ding, Junmei Rong, Shiyong Liu, Minghua Wang, Jinyan Hu, Weizhi Han, Yongmin Zhu, Hua Zhang, Tao Feng, Jianbo Jin, Zhanwei Qiu, Liyou Yang
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Publication number: 20150115164Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include at least one of hafnium (Hf), samarium (Sm), erbium (Er), neodymium (Nd), tantalum (Ta), lutetium (Lu), europium (Eu), dysposium (Dy), or thulium (Tm).Type: ApplicationFiled: October 22, 2014Publication date: April 30, 2015Inventors: W. Bruce Feller, Paul L. White
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Patent number: 9006672Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.Type: GrantFiled: August 1, 2014Date of Patent: April 14, 2015Assignee: Nova Scientific, Inc.Inventors: W. Bruce Feller, Paul L. White
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Patent number: 9006846Abstract: This document refers to apparatus and methods for a device layer of a microelectromechanical system (MEMS) sensor having vias with reduced shunt capacitance. In an example, a device layer can include a substrate having a pair of trenches separated in a horizontal direction by a portion of the substrate, wherein each trench of the pair of trenches includes first and second vertical layers including dielectric, the first and second vertical layers separated by a third vertical layer including polysilicon.Type: GrantFiled: September 20, 2011Date of Patent: April 14, 2015Assignee: Fairchild Semiconductor CorporationInventors: Janusz Bryzek, John Gardner Bloomsburgh, Cenk Acar
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Patent number: 9006955Abstract: A power converter comprises a nuclear radiation emitter having a first side and a second side, wherein the nuclear radiation emitter comprises a radiation-emitting radioisotope, a plurality of semiconductor substrates disposed over the first side of the nuclear radiation emitter, wherein each of the plurality of semiconductor substrates comprises a junction for converting nuclear radiation particles to electrical energy, and at least one high-density layer, wherein the high density layer has a density that is higher than a density of the semiconductor substrates, and wherein the high-density layer is disposed between two of the plurality of semiconductor substrates.Type: GrantFiled: November 1, 2011Date of Patent: April 14, 2015Assignee: Medtronic, Inc.Inventor: Geoffrey D. Batchelder
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Patent number: 8987031Abstract: A method for a constructing radiation detector includes fabricating a multi-layer structure upon a wafer, the multi-layer structure comprising a plurality of metal layers, a plurality of sacrificial layers, and a plurality of insulating layers, forming a cavity within the multi-layer structure, filling the cavity with a gas that ionizes in response to nuclear radiation, and sealing the gas within the cavity.Type: GrantFiled: May 3, 2013Date of Patent: March 24, 2015Assignee: International Business Machines CorporationInventors: Michael S. Gordon, Christopher V. Jahnes, Eric A. Joseph, Hiroyuki Miyazoe, Kenneth P. Rodbell, Arun Sharma, Sri M. Sri-Jayantha
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Patent number: 8952474Abstract: Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.Type: GrantFiled: October 4, 2012Date of Patent: February 10, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuan-Chieh Huang, Dun-Nian Yaung, Chih-Jen Wu, Chen-Ming Huang
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Patent number: 8927965Abstract: A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I wavelength region reduction means for reducing light in a wavelength region of type I absorption in the type II multi-quantum well structure disposed on a light incident surface or between the light incident surface and the light-receiving layer.Type: GrantFiled: March 14, 2013Date of Patent: January 6, 2015Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yasuhiro Iguchi, Hiroshi Inada
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Publication number: 20150001988Abstract: A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto.Type: ApplicationFiled: June 24, 2014Publication date: January 1, 2015Applicant: CITY LABS, INC.Inventor: PETER CABAUY
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Patent number: 8895341Abstract: A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.Type: GrantFiled: March 4, 2013Date of Patent: November 25, 2014Assignee: Shimadzu CorporationInventors: Satoshi Tokuda, Toshinori Yoshimuta, Hiroyuki Kishihara, Masatomo Kaino, Akina Yoshimatsu, Takahiro Doki, Toshiyuki Sato
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Publication number: 20140339433Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.Type: ApplicationFiled: August 1, 2014Publication date: November 20, 2014Inventors: W. Bruce Feller, Paul L. White
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Publication number: 20140329351Abstract: A method for a constructing radiation detector includes fabricating a multi-layer structure upon a wafer, the multi-layer structure comprising a plurality of metal layers, a plurality of sacrificial layers, and a plurality of insulating layers, forming a cavity within the multi-layer structure, filling the cavity with a gas that ionizes in response to nuclear radiation, and sealing the gas within the cavity.Type: ApplicationFiled: May 3, 2013Publication date: November 6, 2014Applicant: International Business Machines CorporationInventor: International Business Machines Corporation
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Publication number: 20140319963Abstract: This invention relates to a radioisotope battery and a method of manufacturing the same, wherein manufacturing the radioisotope battery and shielding radiation emitted from the radioisotope Ni-63 from the outside are achieved simultaneously. This radioisotope battery includes a semiconductor layer, a seed layer formed on the semiconductor layer, a radioisotope layer formed on the seed layer, and a radiation shielding layer formed on the radioisotope layer and for shielding radiation of the radioisotope layer form the outside.Type: ApplicationFiled: April 10, 2014Publication date: October 30, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Byoung-Gun CHOI, Sung-Weon KANG, Kyung-Hwan PARK, Myung-Ae CHUNG
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Publication number: 20140264436Abstract: A low-cost neutron detector is formed on a substrate includes a sensor formed by an active material layer sandwiched between two electrodes, and a neutron capture layer formed in close proximity to (i.e., over and/or under) the sensor. The sensor active material layer includes a bulk heterojunction or bilayer structure that is formed by depositing particulate solutions incorporating at least one type of high atomic number nanoparticle using low-temperature (i.e., below 400° C.) solution processing techniques. The sensor electrode material and neutron capture material are similarly disposed in associated solutions (e.g., conductive inks) that are also deposited using low-temperature solution processing techniques, whereby the fabrication process can be carried out on low-cost flexible substrate material (e.g., PET) using high efficiency roll-to-roll production techniques.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Applicant: Palo Alto Research Center IncorporatedInventors: Gregory L. Whiting, Tse Nga Ng, Janos Veres, Robert A. Street
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Patent number: 8836125Abstract: A packaged electronic device includes a flexible circuit structure and a die. The flexible circuit structure includes a first structural layer and electrical conductors. The die is bonded to the flexible circuit structure by a flexible attachment layer. The die includes interconnects in electrical contact with die circuitry and extending through the die, through the flexible attachment layer, and into electrical contact with respective electrical conductors at first ends. A flexible second structural layer is disposed on the die and exposed portions of the electrical conductors, wherein the die and the electrical conductors are encapsulated by the first structural layer and the second structural layer. The first structural layer and/or the second structural layer include a plurality of openings defining respective exposed areas on the electrical conductors at second ends.Type: GrantFiled: July 24, 2013Date of Patent: September 16, 2014Assignee: Premitec, Inc.Inventors: Helmut Eckhardt, Stefan Ufer
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Publication number: 20140252520Abstract: Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.Type: ApplicationFiled: November 7, 2013Publication date: September 11, 2014Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Rajendra P. DAHAL, Jacky Kuan-Chih HUANG, James J.Q. LU, Yaron DANON, Ishwara B. BHAT
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Patent number: 8828780Abstract: This invention relates to a method of manufacturing a substrate for photoelectric conversion device including, on a substrate, a first electrode layer formed of a transparent conductive material. The method includes a first transparent conductive film forming step of forming a first transparent conductive film on the substrate, a second transparent conductive film forming step of forming a second transparent conductive film under a film forming condition that an etching rate is low compared with the first transparent conductive film at a later etching step, and an etching step of wet-etching the second and first transparent conductive films to form recesses that pierce through at least the second transparent conductive film, with the bottoms of the recesses being present in the first transparent conductive film.Type: GrantFiled: December 7, 2010Date of Patent: September 9, 2014Assignee: Mitsubishi Electric CorporationInventors: Tsutomu Matsuura, Hiroya Yamarin, Yuki Tsuda
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Patent number: 8815627Abstract: A method for manufacturing an ionizing radiation detection device having a block of a semiconductor material adapted to undergo local separations of charges between positive and negative charges under the effect of ionizing radiation. The device including a first series of at least two collecting electrodes formed on the surface of the semiconductor block, and a second series of at least two non-collecting electrodes formed on a support and separated from the semiconductor block by an insulating layer. During processing, after forming the insulating layer on the support so as to cover the non-collecting electrodes, the block of semiconductor material bearing the collecting electrodes and the support bearing the non-collecting electrodes and the insulating layer are assembled.Type: GrantFiled: June 28, 2011Date of Patent: August 26, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Olivier Monnet, Guillaume Montemont, Loick Verger, Marie-Claude Gentet
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Publication number: 20140225094Abstract: The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on, or somehow incorporating, the above detectors.Type: ApplicationFiled: August 2, 2011Publication date: August 14, 2014Applicants: ELETTRA-SINCROTRONE TRIESTE S.C.P.A., ALMA MATER STUDIORUM UNIVERSITA DI BOLOGNAInventors: Beatrice Fraboni, Alessandro Fraleoni Morgera
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Patent number: 8802456Abstract: This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+ N? SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). This is a betavoltaic device, made of ultra-shallow junctions, which allows such penetration of emitted lower energy electrons, thus, reducing or eliminating losses through electron-hole pair recombination at the surface.Type: GrantFiled: February 14, 2012Date of Patent: August 12, 2014Assignee: Widetronix, Inc.Inventors: Michael Spencer, Mvs Chandrashekhar
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Patent number: 8778715Abstract: A method of making a neutron detector such as a microstructured semiconductor neutron detector is provided. The method includes the step of providing a particle-detecting substrate having a surface and a plurality of cavities extending into the substrate from the surface. The method also includes filling the plurality of cavities with a neutron-responsive material. The step of filling including the step of centrifuging nanoparticles of the neutron-responsive material with the substrate for a time and a rotational velocity sufficient to backfill the cavities with the nanoparticles. The material is responsive to neutrons absorbed, thereby, for releasing ionizing radiation reaction products.Type: GrantFiled: June 24, 2013Date of Patent: July 15, 2014Assignee: Radiation Detection Technologies, Inc.Inventors: Steven L. Bellinger, Ryan G. Fronk, Douglas S. McGregor
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Patent number: 8779371Abstract: A radiation detector is provided with a scintillator 2A containing a plurality of modified regions 21 and a plurality of photodetectors or a position-sensitive photodetector optically coupled to a surface of the scintillator 2A. The plurality of modified regions 21 are formed by irradiating an inside of a crystalline lump which will act as the scintillator 2A with a laser beam and three-dimensionally dotted and have a refractive index different from a refractive index of a surrounding region within the inside of the scintillator 2A.Type: GrantFiled: March 13, 2009Date of Patent: July 15, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Takahiro Moriya, Takaji Yamashita, Makoto Kakegawa
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Patent number: 8749056Abstract: A module and a method for manufacturing a module are disclosed. An embodiment of a module includes a first semiconductor device, a frame arranged on the first semiconductor device, the frame including a cavity, and a second semiconductor device arranged on the frame wherein the second semiconductor device seals the cavity.Type: GrantFiled: May 26, 2011Date of Patent: June 10, 2014Assignee: Infineon Technologies AGInventors: Daniel Kehrer, Stefan Martens, Tze Yang Hin, Helmut Wietschorke, Horst Theuss, Beng Keh See, Ulrich Krumbein
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Patent number: 8722448Abstract: A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer. The patterned conductive layer is disposed on the dielectric layer. The inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region.Type: GrantFiled: October 30, 2013Date of Patent: May 13, 2014Assignee: AU Optronics Corp.Inventors: Yu-Min Lin, Hsin-Li Chen, Feng-Yuan Gan
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Patent number: 8691613Abstract: A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.Type: GrantFiled: August 31, 2011Date of Patent: April 8, 2014Assignee: Kaneka CorporationInventors: Masashi Yoshimi, Mitsuru Ichikawa, Toshihiko Uto, Kenji Yamamoto
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Publication number: 20140080243Abstract: A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.Type: ApplicationFiled: March 4, 2013Publication date: March 20, 2014Applicant: SHIMADZU CORPORATIONInventors: Satoshi TOKUDA, Toshinori YOSHIMUTA, Hiroyuki KISHIHARA, Masatomo KAINO, Akina YOSHIMATSU, Takahiro DOKI, Toshiyuki SATO
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Publication number: 20140077088Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.Type: ApplicationFiled: August 12, 2013Publication date: March 20, 2014Applicant: Nova Scientific, Inc.Inventors: W. Bruce Feller, Paul L. White
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Patent number: 8647909Abstract: An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).Type: GrantFiled: January 25, 2012Date of Patent: February 11, 2014Assignee: International Business Machines CorporationInventors: Ethan H. Cannon, Michael J. Hauser, Timothy D. Sullivan
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Publication number: 20140034116Abstract: In some embodiments, energy is released by converting the bonding potential energy between two electropositive masses capable of forming a stable bond between them into the kinetic energy of an electron quasiparticle initially captured between them by the coulomb potential. The electron quasiparticles form transient bonds with delocalized ions and other reactants in or on a reaction particle where reaction rates and branches are controlled by the choice of electron quasiparticle effective mass. Methods and apparatus for stimulating and controlling such association reactions are shown and described. Thermionic and semiconductor methods and apparatus convert the electron quasiparticle energy directly into electricity. Other embodiments are disclosed.Type: ApplicationFiled: August 5, 2013Publication date: February 6, 2014Applicant: Tionesta Applied Research CorporationInventors: Anthony Zuppero, Thomas J. Dolan, William David Jansen, William J. Saas
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Patent number: 8637867Abstract: An electrostatic discharge device and an organic electro-luminescence display device having the same are provided. The organic electro-luminescence display device includes an electrostatic discharge device including a metal pattern having an island shape on a substrate, an insulating layer on the metal pattern, a semiconductor pattern on the insulating layer, the semiconductor pattern corresponding to the metal pattern, a first electrode overlapping one end of the semiconductor pattern, and a second electrode overlapping the other end of the semiconductor pattern, and spaced from the first electrode, thereby preventing a current leakage, a signal distortion and a signal cross-talk to improve the reliability.Type: GrantFiled: December 27, 2007Date of Patent: January 28, 2014Assignee: LG Display Co., Ltd.Inventor: Hee Dong Choi
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Publication number: 20140015082Abstract: A radiation detector includes a sensor substrate and a scintillator layer. The sensor substrate is configured to be capable of performing photoelectric conversion. The scintillator layer includes a first area and a second area, the first area including an activator, the second area including the activator with a concentration lower than the concentration of the activator in the first area, the scintillator layer being provided on the sensor substrate so that the first area and the second area are arranged in a thickness direction of the scintillator layer and the first area is arranged from an end portion on a side of the sensor substrate in the scintillator layer in the thickness direction.Type: ApplicationFiled: June 17, 2013Publication date: January 16, 2014Inventors: Mitsuhiro Kawanishi, Ikumi Kusayama, Takahiro Igarashi
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Patent number: 8618624Abstract: The present invention relates to UV curable encapsulant compositions based on acrylic and/or methacrylic block copolymers, to structures containing these compositions especially photovoltaic cells and to the use of these compositions in photovoltaic cells. The liquid encapsulant composition according to the invention comprises: an acrylic or methacrylic block copolymer, at least one acrylic or methacrylic monomer and/or oligomer, and at least one photo initiator.Type: GrantFiled: May 3, 2010Date of Patent: December 31, 2013Assignees: Arkema France, Pythagoras Solar Inc.Inventors: Pierre Gerard, Izhar Halahmi, Pasha Solel
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Publication number: 20130344636Abstract: A method of making a neutron detector such as a microstructured semiconductor neutron detector is provided. The method includes the step of providing a particle-detecting substrate having a surface and a plurality of cavities extending into the substrate from the surface. The method also includes filling the plurality of cavities with a neutron-responsive material. The step of filling including the step of centrifuging nanoparticles of the neutron-responsive material with the substrate for a time and a rotational velocity sufficient to backfill the cavities with the nanoparticles.Type: ApplicationFiled: June 24, 2013Publication date: December 26, 2013Inventors: Steven L. Bellinger, Ryan G. Fronk, Douglas S. McGregor
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Patent number: 8614111Abstract: A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of the radiation detector to form the neutron detector. The neutron converter layer comprises one of boron-10 (10B), lithium-6 (6Li), helium-3 (3He), and gadolinium-157 (157Gd).Type: GrantFiled: July 25, 2011Date of Patent: December 24, 2013Assignee: International Business Machines CorporationInventors: Michael S. Gordon, Kenneth P. Rodbell, Jeng-Bang Yau
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Publication number: 20130267056Abstract: An underlayer is formed on a side wall 101a of a through hole 101 out of the side wall 101a of the through hole 101 and a substrate main surface, with a main surface having a low adhesion to a conductive layer disposed as an upper surface, and the conductive layer is formed on the substrate main surface and the side wall 101a of the through hole 101 on which the underlayer is formed, and the underlayer formed on the side wall 101a of the through hole 101 is selectively etched.Type: ApplicationFiled: November 22, 2011Publication date: October 10, 2013Applicant: HOYA CORPORATIONInventors: Takashi Fushie, Hajime Kikuchi
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Patent number: 8552429Abstract: A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.Type: GrantFiled: October 22, 2009Date of Patent: October 8, 2013Assignee: The Regents of the University of CaliforniaInventors: Paul N. Luke, Craig S. Tindall, Mark Amman
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Patent number: 8552616Abstract: A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.Type: GrantFiled: October 25, 2006Date of Patent: October 8, 2013Assignee: The Curators of the University of MissouriInventor: Mark A. Prelas
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Patent number: 8546928Abstract: The present application relates to a multiple component which is to be subsequently individualized by forming components containing active structures, in addition to a corresponding component which can be used in microsystem technology systems. The multiple component and/or component comprises a flat substrate and also a flat cap structure which are bound to each other such that they surround at least one first and one second cavity per component, which are sealed against each other and towards the outside. The first of the two cavities is provided with getter material and due to the getter material has a different internal pressure and/or a different gas composition than the second cavity. The present application also relates to a method for producing the type of component and/or components for which gas mixtures of various types of gas have a different absorption ratio in relation to the getter material.Type: GrantFiled: April 4, 2007Date of Patent: October 1, 2013Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e. V.Inventors: Peter Merz, Wolfgang Reinert, Marten Oldsen, Oliver Schwarzelbach
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Publication number: 20130240744Abstract: A neutron detector and method of manufacture are provided. The neutron detector includes a sensing element structure having a substrate with a front surface and a back surface, opposite to the front surface. A semiconductor sensing element is fabricated in an active semiconductor layer on the front surface of the first substrate and is sensitive to a charged particle. A neutron conversion structure is attached to the back surface and includes neutron conversion material that emits the charged particle in response to a reaction with neutrons.Type: ApplicationFiled: May 1, 2013Publication date: September 19, 2013Inventors: Allan Thomas Hurst, JR., Danny R. Kagey, Harold Diederich
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Patent number: 8525340Abstract: A packaged electronic device includes a flexible circuit structure and a die. The flexible circuit structure includes a first structural layer and electrical conductors. The die is bonded to the flexible circuit structure by a flexible attachment layer. The die includes interconnects in electrical contact with die circuitry and extending through the die, through the flexible attachment layer, and into electrical contact with respective electrical conductors at first ends. A flexible second structural layer is disposed on the die and exposed portions of the electrical conductors, wherein the die and the electrical conductors are encapsulated by the first structural layer and the second structural layer. The first structural layer and/or the second structural layer include a plurality of openings defining respective exposed areas on the electrical conductors at second ends.Type: GrantFiled: October 6, 2011Date of Patent: September 3, 2013Assignee: Premitec, Inc.Inventors: Helmut Eckhardt, Stefan Ufer
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Patent number: 8519456Abstract: A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.Type: GrantFiled: September 28, 2010Date of Patent: August 27, 2013Assignee: Sony CorporationInventors: Atsushi Masagaki, Ikuhiro Yamamura
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Patent number: 8487392Abstract: To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given.Type: GrantFiled: August 6, 2010Date of Patent: July 16, 2013Assignee: Widetronix, Inc.Inventors: Michael Spencer, MVS Chandrashekhar
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Publication number: 20130147472Abstract: The cost and size of an atomic magnetometer are reduced by attaching a vapor cell structure that has a vapor cell cavity to a base die that has a laser light source that outputs light to the vapor cell cavity, and attaching a photo detection die that has a photodiode to the vapor cell structure to detect light from the laser light source that passes through the vapor cell cavity.Type: ApplicationFiled: December 7, 2011Publication date: June 13, 2013Inventors: William French, Philipp Lindorfer, Peter J. Hopper, Roozbeh Parsa, Andrew James West, Byron Jon Roderick Shulver
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Publication number: 20130134315Abstract: A method and device include a conductive base layer, a semiconducting layer supported by and electrically coupled to the base layer, the semiconductor layer have integrated gadolinium nanoparticles presenting a high cross section to neutron particles, and a conductive top layer electrically coupled to the semiconductor layer, wherein the base layer and top layer are disposed to collect current from electrons resulting from neutron interactions with the gadolinium nanoparticles.Type: ApplicationFiled: November 30, 2011Publication date: May 30, 2013Applicant: Honeywell International Inc.Inventor: Matthew S. Marcus
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Patent number: 8450820Abstract: The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p+-diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer.Type: GrantFiled: January 13, 2011Date of Patent: May 28, 2013Inventors: Lis Karen Nanver, Thomas Ludovicus Maria Scholtes, Agata {hacek over (S)}akić, Cornelis Sander Kooijman, Gerard Nicolaas Anne van Veen
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Patent number: 8445307Abstract: Monolithic IC/MEMS processes are disclosed in which high-stress silicon nitride is used as a mechanical material while amorphous silicon serves as a sacrificial layer. Electronic circuits and micro-electromechanical devices are built on separate areas of a single wafer. The sequence of IC and MEMS process steps is designed to prevent alteration of partially completed circuits and devices by subsequent high process temperatures.Type: GrantFiled: December 15, 2010Date of Patent: May 21, 2013Assignee: Alces Technology, Inc.Inventors: Richard Yeh, David M Bloom
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Publication number: 20130082264Abstract: The present approach involves a radiation detector module with increased quantum efficiency and methods of fabricating the radiation detector module. The module includes a scintillator substrate and a photodetector fabricated on the scintillator substrate. The photodetector includes an anode, active organic elements, and a cathode. The module also includes a pixel element array disposed over the photodetector. During imaging, radiation attenuated by an object to be imaged may propagate through the pixel element array and through the layers of the photodetector to be absorbed by the scintillator which in response emits optical photons. The photodetector may absorb the photons and generate charge with improved quantum efficiency, as the photons may not be obscured by the cathode or other layers of the module. Further, the module may include reflective materials in the cathode and at the pixel element array to direct optical photons towards the active organic elements.Type: ApplicationFiled: September 30, 2011Publication date: April 4, 2013Applicant: General Electric CompanyInventors: Aaron Judy Couture, Steven Jude Duclos, Joseph John Shiang, Gautam Parthasarathy