Gate Insulator Structure Constructed Of Plural Layers Or Nonsilicon Containing Compound Patents (Class 438/591)
  • Patent number: 11908915
    Abstract: A semiconductor device includes a gate structure disposed over a channel region and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, one or more work function adjustment material layers over the gate dielectric layer, and a metal gate electrode layer over the one or more work function adjustment material layers. The one or more work function adjustment layers includes an aluminum containing layer, and a diffusion barrier layer is disposed at at least one of a bottom portion and a top portion of the aluminum containing layer. The diffusion barrier layer is one or more of a Ti-rich layer, a Ti-doped layer, a Ta-rich layer, a Ta-doped layer and a Si-doped layer.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: February 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shahaji B. More, Chandrashekhar Prakash Savant, Tien-Wei Yu, Chia-Ming Tsai
  • Patent number: 11824100
    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate stack over an active region of a substrate. The gate stack includes a gate dielectric layer and a first work function layer over the gate dielectric layer. The first work function layer includes a plurality of first layers and a plurality of second layers arranged in an alternating manner over the gate dielectric layer. The plurality of first layers include a first material. The plurality of second layers include a second material different from the first material.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: November 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yi Lee, Weng Chang, Chi On Chui
  • Patent number: 11769542
    Abstract: A field effect transistor construction includes a semiconductive channel core. A source/drain region is at opposite ends of the channel core. A gate is proximate a periphery of the channel core. A gate insulator is between the gate and the channel core. The gate insulator has local regions radially there-through that have different capacitance at different circumferential locations relative to the channel core periphery. Additional constructions, and methods, are disclosed.
    Type: Grant
    Filed: October 14, 2021
    Date of Patent: September 26, 2023
    Assignee: Micron Technology, Inc
    Inventors: Kamal M. Karda, Chandra Mouli, Durai Vishak Nirmal Ramaswamy, F. Daniel Gealy
  • Patent number: 11769822
    Abstract: A semiconductor device includes a substrate, a semiconductor fin, gate spacers, a gate structure. The semiconductor fin is on the substrate. The gate spacers are over the semiconductor fin. The gate structure is on the semiconductor fin and between the gate spacers. The gate structure includes a gate dielectric layer and a first work function metal over the gate dielectric layer, in which a top surface of the first work function metal is lower than a top surface of the gate dielectric layer, and a distance between the top surface of the first work function metal and the top surface of the gate dielectric layer is less than about 1 nm.
    Type: Grant
    Filed: August 25, 2021
    Date of Patent: September 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Hao Chang, Li-Te Lin
  • Patent number: 11728171
    Abstract: A semiconductor process system etches gate metals on semiconductor wafers. The semiconductor process system includes a machine learning based analysis model. The analysis model dynamically selects process conditions for an etching process. The process system then uses the selected process conditions data for the next etching process.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: August 15, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Chung-Liang Cheng
  • Patent number: 11637196
    Abstract: Present disclosure provides a method for forming a semiconductor structure, including forming a dielectric layer over a semiconductor substrate, patterning an insulator stripe over the semiconductor substrate, including forming an insulator layer over the semiconductor substrate and at a bottom of the insulator stripe, depositing a semiconductor capping layer continuously over the insulator stripe, wherein the semiconductor capping layer includes crystalline materials, wherein the semiconductor capping layer is free from being in direct contact with the semiconductor substrate, and cutting off the semiconductor capping layer between the insulator stripes, forming a gate, wherein the gate is in direct contact with the semiconductor capping layer, a first portion of the semiconductor capping layer covered by the gate is configured as a channel structure, and forming a conductible region at a portion of the insulator stripe not covered by the gate stripe by a regrowth operation.
    Type: Grant
    Filed: March 4, 2022
    Date of Patent: April 25, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Yi Chuang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11569262
    Abstract: A semiconductor device includes a first stacked structure and a second stacked structure spaced apart from each other on a substrate, and a plurality of separation structures and a plurality of vertical memory structures alternately arranged between the first stacked structure and the second stacked structure in a first direction parallel to an upper surface of the substrate. Each of the first and second stacked structures includes a plurality of interlayer insulating layers and a plurality of gate layers alternately repeatedly stacked on the lower structure. Each of the vertical memory structures includes a first data storage structure facing the first stacked structure and a second data storage structure facing the second stacked structure. Side surfaces of the first and second stacked structures facing the vertical memory structures are concave in a plan view.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: January 31, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Janggn Yun, Jaeduk Lee, Dongwhee Kwon
  • Patent number: 11515310
    Abstract: A cell array includes a substrate and a conductive line. The substrate has active areas in the substrate. The conductive line is disposed across the active areas and includes work function nodes and line sections which are horizontally and alternately arranged with work function nodes, in which each work function node is between two of the active areas.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: November 29, 2022
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventor: Tsung-Yu Tsai
  • Patent number: 11495540
    Abstract: Aspects of the disclosure provide a semiconductor apparatus including a plurality of structures. A first one of the structures comprises a first stack of transistors that includes a first transistor formed on a substrate and a second transistor stacked on the first transistor along a Z direction substantially perpendicular to a substrate plane of the semiconductor apparatus. The first one of the structures further includes local interconnect structures. The first transistor is sandwiched between two of the local interconnect structures. The first one of the structures further includes vertical conductive structures substantially parallel to the Z direction. The vertical conductive structures are configured to provide at least power supplies for the first one of the structures by electrically coupling with the local interconnect structures. A height of one of the vertical conductive structures along the Z direction is at least a height of the first one of the structures.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: November 8, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Lars Liebmann, Jeffrey Smith, Anton deVilliers
  • Patent number: 11405223
    Abstract: In accordance with an embodiment, a physically unclonable function device includes a set of transistor pairs, transistors of the set of transistor pairs having a randomly distributed effective threshold voltage belonging to a common random distribution; a differential read circuit configured to measure a threshold difference between the effective threshold voltages of transistors of transistor pairs of the set of transistor pairs, and to identify a transistor pair in which the measured threshold difference is smaller than a margin value as being an unreliable transistor pair; and a write circuit configured to shift the effective threshold voltage of a transistor of the unreliable transistor pair to be inside the common random distribution.
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: August 2, 2022
    Assignees: STMICROELECTRONICS (ROUSSET) SAS, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Francesco La Rosa, Marc Mantelli, Stephan Niel, Arnaud Regnier
  • Patent number: 11374109
    Abstract: A method for fabricating gate structures includes providing a substrate, configured to have a first region and a second region. Dummy gate structures are formed on the substrate at the first and second regions, wherein each of the dummy gate structures has a first gate insulating layer on the substrate and a dummy gate on the first gate insulating layer. An inter-layer dielectric layer is formed over the dummy gate structures. The inter-layer dielectric layer is polished to expose all of the dummy gates. The dummy gates are removed. The first gate insulating layer at the second region is removed. A second gate insulating layer is formed on the substrate at the second region, wherein the first gate insulating layer is thicker than the second insulating layer. Metal gates are formed on the first and the second insulating layer.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: June 28, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Hao Pan, Chi-Cheng Huang, Kuo-Lung Li, Szu-Ping Wang, Po-Hsuan Chen, Chao-Sheng Cheng
  • Patent number: 11373912
    Abstract: A method for forming a semiconductor structure includes forming a dielectric layer on a substrate, including a first region and a second region; forming a first gate opening and a second gate opening in dielectric layer of the first region and the second region, respectively; forming initial work function layers on bottom and sidewall surfaces of the first gate opening and the second gate opening; and performing at least one cycle of a combined etching process to etch the initial work function layers formed in the first gate opening and form a work function layer in the second gate opening from the initial work function layers. Each cycle of the combined etching process includes performing an oxide etching process to etch the initial work function layers; and then performing a main etching process on the initial work function layers to remove an exposed initial work function layer.
    Type: Grant
    Filed: July 17, 2020
    Date of Patent: June 28, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Hao Jun Huang, Yong Gen He
  • Patent number: 11355339
    Abstract: A method includes forming a silicon layer on a wafer, forming an oxide layer in contact with the silicon layer, and, after the oxide layer is formed, annealing the wafer in an environment comprising ammonia (NH3) to form a dielectric barrier layer between, and in contact with, the silicon layer and the oxide layer. The dielectric barrier layer comprises silicon and nitrogen.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: June 7, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wan-Yi Kao, Chung-Chi Ko
  • Patent number: 11335786
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device including a gate structure. The semiconductor device further includes a pair of spacer segments on a semiconductor substrate. A high-? gate dielectric structure overlies the semiconductor substrate. The high-? gate dielectric structure is laterally between and borders the spacer segments. The gate structure overlies the high-k gate dielectric structure and has a top surface about even with a top surface of the spacer segments. The gate structure includes a metal structure and a gate body layer. The gate body layer has a top surface that is vertically offset from a top surface of the metal structure and further has a lower portion cupped by the metal structure.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: May 17, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei Cheng Wu, Alexander Kalnitsky, Shih-Hao Lo, Hung-Pin Ko
  • Patent number: 11335701
    Abstract: A semiconductor device includes a substrate, a channel on or in the substrate, a source/drain pair respectively on opposite ends of the channel, and a gate structure on the channel between the source/drain pair, wherein the gate structure includes an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, and a threshold voltage control layer that are sequentially stacked on the channel.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: May 17, 2022
    Inventors: Byounghoon Lee, Jongho Park, Musarrat Hasan, Wandon Kim, Seungkeun Cha
  • Patent number: 11329136
    Abstract: A method for fabricating a semiconductor device includes forming an interfacial layer and a dielectric layer on a base structure and around channels of a first gate-all-around field-effect transistor (GAA FET) device within a first region and a second GAA FET device within a second region, forming at least a scavenging metal layer in the first and second regions, and performing an anneal process after forming at least one cap layer.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: May 10, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ruqiang Bao, Huiming Bu
  • Patent number: 11282933
    Abstract: A semiconductor device includes a semiconductor substrate having a channel region. A gate dielectric layer is over the channel region of the semiconductor substrate. A work function metal layer is over the gate dielectric layer. The work function metal layer has a bottom portion, an upper portion, and a work function material. The bottom portion is between the gate dielectric layer and the upper portion. The bottom portion has a first concentration of the work function material, the upper portion has a second concentration of the work function material, and the first concentration is higher than the second concentration. A gate electrode is over the upper portion of the work function metal layer.
    Type: Grant
    Filed: July 10, 2018
    Date of Patent: March 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Peng-Soon Lim, Zi-Wei Fang, Cheng-Ming Lin
  • Patent number: 11282850
    Abstract: A semiconductor memory device includes: a first and a second electrodes aligned in a first direction; a first semiconductor layer provided between the first and the second electrodes; a second semiconductor layer provided between the first semiconductor layer and the second electrode; a first charge accumulating layer provided between the first electrode and the first semiconductor layer; and a second charge accumulating layer provided between the second electrode and the second semiconductor layer. At least one of the first and the second charge accumulating layers include: a first and a second regions including nitrogen, aluminum, and oxygen and having different positions in a second direction; and a third region provided between the first and the second regions in the second direction. Oxygen is not included in the third region or a concentration of oxygen in the third region is lower than that in the first and the second regions.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: March 22, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Akira Takashima, Tsunehiro Ino, Ayaka Suko
  • Patent number: 11276698
    Abstract: A flash memory device and its manufacturing method, which is related to semiconductor techniques. The flash memory device comprises: a substrate; and a memory unit on the substrate, comprising: a channel structure on the substrate, wherein the channel structure comprise, in an order from inner to outer of the channel structure, a channel layer, an insulation layer wrapped around the channel layer, and a charge capture layer wrapped around the insulation layer; a plurality of gate structures wrapped around the channel structure and arranged along a symmetry axis of the channel structure, wherein there exist cavities between neighboring gate structures; a support structure supporting the gate structures; and a plurality of gate contact components each contacting a gate structure. The cavities between neighboring gate structures lower the parasitic capacitance, reduce inter-gate interference, and suppress the influence from writing or erasing operations of nearby memory units.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: March 15, 2022
    Inventors: Rongyao Chang, Zhuofan Chen, Haiyang Zhang
  • Patent number: 11271094
    Abstract: Present disclosure provides a semiconductor structure, including a semiconductor substrate, an insulator fin over the semiconductor substrate, the insulator fin having a principle dimension, from a cross sectional perspective, perpendicular to a top surface of the semiconductor substrate, and a semiconductor capping layer cover the insulator fin along the principle dimension. A method for manufacturing a semiconductor structure is also disclosed in the present disclosure.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: March 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Yi Chuang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11257953
    Abstract: An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor device includes a substrate having a gate structure formed thereupon. The gate structure includes a gate dielectric layer disposed on the substrate, a growth control material disposed on a side surface of the gate structure, and a gate electrode fill material disposed on the growth control material. The gate electrode fill material is also disposed on a bottom surface of the gate structure that is free of the growth control material. In some such embodiments, the gate electrode fill material contacts a first surface and a second surface that are different in composition.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Nan Wu, Shiu-Ko JangJian, Chun Che Lin, Wen-Cheng Hsuku
  • Patent number: 11230098
    Abstract: A passivation stack can include a laminated film, including from 8 to 40 alternating layers of HfO2 and SiO2. The layers can individually have a thickness from 8 Angstroms to 40 Angstroms, and the laminated film can have a total thickness of 280 Angstroms to 600 Angstroms. The passivation stack can also include a barrier film of HfO2 having a thickness from 50 Angstroms to 300 Angstroms applied to the laminated film.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: January 25, 2022
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhizhang Chen, Lawrence H. White
  • Patent number: 11195847
    Abstract: A memory device includes a substrate; a stack including a plurality of conductive layers and a plurality of insulating layers being alternatively stacked on the substrate; a plurality of memory structures formed on the substrate and penetrating the stack; a plurality of isolation structures formed on the substrate and penetrating the stack, wherein the isolation structures dividing the memory structures into a plurality of first memory structures and a plurality of second memory structures; and a plurality of common source pillars formed on the substrate and penetrating the stack, wherein the common source pillars directly contact the isolation structures.
    Type: Grant
    Filed: May 15, 2019
    Date of Patent: December 7, 2021
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Min-Feng Hung, Chia-Jung Chiu, Guan-Ru Lee
  • Patent number: 11171149
    Abstract: According to one embodiment, in a semiconductor storage device, the first contact plug electrically connects the third region to the first drive circuit. The second contact plug is provided on one end side of a fourth region in the third direction, the fourth region arranged between the first separation film and the second separation film in the second conductive layer. The second contact plug electrically connects the fourth region to the first drive circuit. The third contact plug is provided on the other end side of the third region in the third direction. The third contact plug electrically connects the third region to the second drive circuit.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: November 9, 2021
    Assignee: Toshiba Memory Corporation
    Inventor: Yoichi Minemura
  • Patent number: 11133181
    Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: September 28, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Toshiya Suzuki, Viljami J. Pore, Shang Chen, Ryoko Yamada, Dai Ishikawa, Kunitoshi Namba
  • Patent number: 11107907
    Abstract: A method for manufacturing a semiconductor device includes forming a dummy gate structure on a semiconductor fin; forming a plurality of gate spacers on opposite sidewalls of the dummy gate structure; removing the dummy gate structure from the semiconductor fin; forming a gate structure on the semiconductor fin and between the gate spacers, wherein the gate structure comprises a gate dielectric layer and a work function metal over the gate dielectric layer; performing a first plasma etching process by using a first reactant to etch back the gate structure performing a second plasma etching process by using a second reactant on the etched-back gate structure, wherein the first plasma etching process has a first removal rate of the gate dielectric layer, the second plasma etching process has a second removal rate of the gate dielectric layer, and the second removal rate is greater than the first removal rate.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: August 31, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Hao Chang, Li-Te Lin
  • Patent number: 11088258
    Abstract: A field-effect transistor (FET) device having a modulated threshold voltage (Vt) includes a source electrode, a drain electrode, a channel region extending between the source electrode and the drain electrode, and a gate stack on the channel region. The gate stack includes an ultrathin dielectric dipole layer on the channel region configured to shift the modulated Vt in a first direction, a high-k (HK) insulating layer on the ultrathin dielectric dipole layer, and a doped gate metal layer on the HK insulating layer configured to shift the modulated Vt in a second direction.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: August 10, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Wei-E Wang, Mark S. Rodder
  • Patent number: 11075276
    Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: July 27, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yongjing Lin, Shih Chung Chen, Naomi Yoshida, Lin Dong, Liqi Wu, Rongjun Wang, Steven Hung, Karla Bernal Ramos, Yixiong Yang, Wei Tang, Sang-Ho Yu
  • Patent number: 11011618
    Abstract: Various examples of a circuit device that includes gate stacks and gate seals are disclosed herein. In an example, a substrate is received that has a fin extending from the substrate. A placeholder gate is formed on the fin, and first and second gate seals are formed on sides of the placeholder gate. The placeholder gate is selectively removed to form a recess between side surfaces of the first gate seal and the second gate seal. A functional gate is formed within the recess and between the side surfaces of the first gate seal and the second gate seal.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sheng-Chou Lai, Tsung-Yu Chiang
  • Patent number: 10991425
    Abstract: Methods, systems, and devices for access line grain modulation in a memory device are described. A memory cell stack in a cross-point memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A barrier material may be formed above the memory cell stack. The barrier material may initially have an undulating top surface. In some cases, the top surface of the barrier material may be planarized. After the top surface of the barrier material is planarized, a metal layer for an access line may be formed on the top surface of the barrier material. Planarizing the top surface of the barrier material may impact the grain size of the metal layer. In some cases, planarizing the top surface of the barrier material may decrease the resistivity of access lines formed from the metal layer and thus increase current delivery throughout the memory device.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: April 27, 2021
    Assignee: Micron Technology, Inc.
    Inventors: David Ross Economy, Stephen W. Russell
  • Patent number: 10964795
    Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Lun Chen, Chao-Hsien Huang, Li-Te Lin, Chun-Hsiung Lin
  • Patent number: 10964716
    Abstract: A semiconductor device comprises a substrate. A plurality of electrode layers and a plurality of insulating layers are formed in an alternating stack above the substrate. A semiconductor column extends through the plurality of electrode layers and the plurality of insulating layers. The semiconductor column comprises a single-crystal semiconductor material on an outer peripheral surface facing the electrode and insulating layers. First insulating films are formed between the semiconductor column and the electrode layers. The first insulating films are spaced from each other along the column length. Each first insulating film corresponds to one electrode layer. A charge storage layer is between each of the first insulating films and the electrode layers. A second insulating film is between the charge storage layer and each of the electrode layers.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: March 30, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Shinji Mori, Kazuhiro Matsuo, Yuta Saito, Keiichi Sawa, Kazuhisa Matsuda, Atsushi Takahashi, Masayuki Tanaka, Kenichiro Toratani
  • Patent number: 10957545
    Abstract: A method includes etching a dummy gate to form an opening. A gate dielectric layer is deposited in the opening. A blocking layer is deposited over the gate dielectric layer, wherein the blocking layer has a bottom portion over a bottom of the opening and a sidewall portion over a sidewall of the opening. An adhesive layer is deposited over the bottom portion of the blocking layer. A metal layer is deposited over the adhesive layer, wherein the metal layer is in contact with the sidewall portion of the blocking layer.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jia-Ming Lin, Shiu-Ko Jangjian, Chun-Che Lin
  • Patent number: 10930566
    Abstract: An electrical device that includes a p-type semiconductor device having a p-type work function gate structure including a first high-k gate dielectric, a first metal containing buffer layer, a first titanium nitride layer having a first thickness present on the metal containing buffer layer, and a first gate conductor contact. A mid gap semiconductor device having a mid gap gate structure including a second high-k gate dielectric, a second metal containing buffer layer, a second titanium nitride layer having a second thickness that is less than the first thickness present, and a second gate conductor contact. An n-type semiconductor device having an n-type work function gate structure including a third high-k gate dielectric present on a channel region of the n-type semiconductor device, a third metal containing buffer layer on the third high-k gate dielectric and a third gate conductor fill present atop the third metal containing buffer layer.
    Type: Grant
    Filed: January 2, 2020
    Date of Patent: February 23, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Lisa F. Edge, Hemanth Jagannathan, Paul C. Jamison, Vamsi K. Paruchuri
  • Patent number: 10879072
    Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: December 29, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Kazuhiko Fuse, Shinichi Kato, Kenichi Yokouchi
  • Patent number: 10879393
    Abstract: A method of fabricating a semiconductor device includes forming a dummy gate structure on a substrate, forming gate spacers on sidewalls of the dummy gate structure, and depositing an interlayer dielectric layer around the gate spacers. The method also includes removing the dummy gate structure to form a space between the gate spacers, and forming a gate structure in the space, wherein the gate structure includes a gate dielectric layer and a gate electrode layer over the gate dielectric layer. The method further includes removing a portion of the gate electrode layer to form a recess that is surrounded by the gate dielectric layer. In addition, the method includes implanting on the interlayer dielectric layer to form a strained layer for bending the gate dielectric layer and the gate spacers towards the recess.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsin-Che Chiang, Wei-Chih Kao, Chun-Sheng Liang, Jeng-Ya Yeh
  • Patent number: 10879370
    Abstract: A method includes forming a dummy gate stack, forming a dielectric layer, with the dummy gate stack located in the dielectric layer, removing the dummy gate stack to form a opening in the dielectric layer, forming a metal layer extending into the opening, and etching back the metal layer. The remaining portions of the metal layer in the opening have edges lower than a top surface of the dielectric layer. A conductive layer is selectively deposited in the opening. The conductive layer is over the metal layer, and the metal layer and the conductive layer in combination form a replacement gate.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Peng-Soon Lim, Cheng-Lung Hung, Mao-Lin Huang, Weng Chang
  • Patent number: 10868055
    Abstract: An image sensor and a method for forming an image sensor are provided. The image sensor includes a substrate, and the substrate includes a pixel region, a peripheral region and a boundary region, and the boundary region is formed between the pixel region and the peripheral region. The image sensor also includes a first gate stack structure formed in the pixel region and a second gate stack structure formed in the peripheral region. The second gate stack structure includes a high-k dielectric layer and a first metal layer.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: December 15, 2020
    Inventor: Ming-Chyi Liu
  • Patent number: 10867862
    Abstract: A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Hsiung Yen, Ta-Chun Ma, Chien-Chang Su, Jung-Jen Chen, Pei-Ren Jeng, Chii-Horng Li, Kei-Wei Chen
  • Patent number: 10847515
    Abstract: A semiconductor device may include a substrate, a first nanowire, a second nanowire, a first gate insulating layer, a second gate insulating layer, a first metal layer and a second metal layer. The first gate insulating layer may be along a periphery of the first nanowire. The second gate insulating layer may be along a periphery of the second nanowire. The first metal layer may be on a top surface of the first gate insulating layer along the periphery of the first nanowire. The first metal layer may have a first crystal grain size. The second metal layer may be on a top surface of the second gate insulating layer along the periphery of the second nanowire. The second metal layer may have a second crystal grain size different from the first crystal grain size.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: November 24, 2020
    Inventors: Jae Jung Kim, Young Suk Chai, Sang Yong Kim, Hoon Joo Na, Sang Jin Hyun
  • Patent number: 10840330
    Abstract: A method includes method includes forming a dummy gate stack over a semiconductor substrate, wherein the semiconductor substrate is comprised in a wafer, removing the dummy gate stack to form a recess, forming a gate dielectric layer in the recess, and forming a metal layer in the recess and over the gate dielectric layer. The metal layer has an n-work function. A block layer is deposited over the metal layer using Atomic Layer Deposition (ALD). The remaining portion of the recess is filled with metallic materials, wherein the metallic materials are overlying the metal layer.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Chih Tsao, Chi-Cheng Hung, Yu-Sheng Wang, Wen-Hsi Lee, Kei-Wei Chen, Ying-Lang Wang
  • Patent number: 10833088
    Abstract: A method of fabricating a semiconductor memory device includes etching a substrate that forms a trench that crosses active regions of the substrate, forming a gate insulating layer on bottom and side surfaces of the trench, forming a first gate electrode on the gate insulating layer that fills a lower portion of the trench, oxidizing a top surface of the first gate electrode where a preliminary barrier layer is formed, nitrifying the preliminary barrier layer where a barrier layer is formed, and forming a second gate electrode on the barrier layer that fills an upper portion of the trench.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: November 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-Hyun Im, Daehyun Kim, Hoon Park, Jae-Hong Seo, Chunhyung Chung, Jae-Joong Choi
  • Patent number: 10832974
    Abstract: A semiconductor device includes a n-type gate structure over a first semiconductor fin, in which the n-type gate structure includes a n-type work function metal layer overlying the first high-k dielectric layer. The n-type work function metal layer includes a TiAl (titanium aluminum) alloy, in which an atom ratio of Ti (titanium) to Al (aluminum) is in a range substantially from 1 to 3. The semiconductor device further includes a p-type gate structure over a second semiconductor fin, in which the p-type gate structure includes a p-type work function metal layer overlying the second high-k dielectric layer. The p-type work function metal layer includes titanium nitride (TiN), in which an atom ratio of Ti to N (nitrogen) is in a range substantially from 1:0.9 to 1:1.1.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: November 10, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Shiu-Ko JangJian, Chi-Cheng Hung, Horng-Huei Tseng
  • Patent number: 10825697
    Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: November 3, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Tomoyuki Yamada, Tadashi Kontani, Seiyo Nakashima, Mikio Ohno
  • Patent number: 10790299
    Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The method comprises forming on a substrate a mold structure including a plurality of sacrificial patterns and a plurality of dielectric patterns that are alternately stacked, patterning the mold structure to form a plurality of preliminary stack structures extending in a first direction, forming on the preliminary stack structures a support pattern that extends in a direction intersecting the first direction and extends across the preliminary stack structures, and replacing the sacrificial patterns with conductive patterns to form a plurality of stack structures from the preliminary stack structures. The support pattern remains on the stack structures.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sunil Shim
  • Patent number: 10749011
    Abstract: Embodiments of the present invention are directed to techniques for forming a vertical field effect transistor (VFET) top spacer using an area selective cyclic deposition. In a non-limiting embodiment of the invention, a first semiconductor fin is formed over a substrate. A second semiconductor fin is formed over the substrate and adjacent to the first semiconductor fin. A dielectric isolation region is formed between the first semiconductor fin and the second semiconductor fin. A top spacer is formed between the first semiconductor fin and the second semiconductor fin by cyclically depositing dielectric layers over the dielectric isolation region. The dielectric layers are inhibited from depositing on a surface of the first semiconductor fin and on a surface of the second semiconductor fin during the cyclic deposition process.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: August 18, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Zhenxing Bi, Kangguo Cheng, Yongan Xu, Yi Song
  • Patent number: 10707132
    Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: July 7, 2020
    Assignees: International Business Machines Corporation, GlobalFoundries Inc., LAM Research Corporation
    Inventors: Georges Jacobi, Vimal K. Kamineni, Randolph F. Knarr, Balasubramanian Pranatharthiharan, Muthumanickam Sankarapandian
  • Patent number: 10707121
    Abstract: Conductive structure technology is disclosed. In one example, a conductive structure can include an interconnect and a plurality of conductive layers overlying the interconnect. Each conductive layer can be separated from an adjacent conductive layer by an insulative layer. In addition, the conductive structure can include a contact extending through the plurality of conductive layers to the interconnect. The contact can be electrically coupled to the interconnect and insulated from the plurality of conductive layers. Associated systems and methods are also disclosed.
    Type: Grant
    Filed: December 31, 2016
    Date of Patent: July 7, 2020
    Assignee: Intel Corporatino
    Inventors: Jun Liu, Mark A. Levan, Gordon A. Haller, Fei Wang, Wei Yeeng Ng, Wesley O. McKinsey, Zhiqiang Xie, Jeremy F. Adams, Hongbin Zhu, Jun Zhao
  • Patent number: 10685977
    Abstract: A semiconductor memory device includes a stack structure including gate electrodes vertically stacked on a substrate and a vertical channel part penetrating the gate electrodes, a bit line connected to the vertical channel part, and a plurality of conductive lines connected to the gate electrodes on the stack structure. The conductive lines form a plurality of stacked layers and include first conductive lines and second conductive lines. The number of the first conductive lines disposed at a first level from the substrate is different from the number of the second conductive lines disposed at a second level from the substrate. The first level is different from the second level.
    Type: Grant
    Filed: December 24, 2018
    Date of Patent: June 16, 2020
    Assignee: SAMSUNG ELECTRONICS CO., .LTD.
    Inventors: Jongwon Kim, Hyeong Park, Hyunmin Lee, Hojong Kang, Joowon Park, Seungmin Song
  • Patent number: 10665685
    Abstract: A method includes forming a gate dielectric layer over a semiconductor substrate, forming a first metal element-containing layer over the gate dielectric layer, and thermal soaking the first metal element-containing layer in a first gas, such that a constituent of the first gas is diffused into the first metal element-containing layer.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: May 26, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ming Lin, Peng-Soon Lim, Zi-Wei Fang