Abstract: To improve an SN ratio of a photoelectric conversion element. A photoelectric conversion element (10) includes an anode (12), a cathode (16), an active layer (14) provided between the anode and the cathode, and a hole transport layer (13) provided between the anode and the active layer. The active layer includes a p-type semiconductor material, which is a polymer compound having an absorption peak wavelength of 900 nm or higher, and an n-type semiconductor material, and an energy gap between an LUMO of the n-type semiconductor material contained in the active layer and a HOMO of a hole transport material contained in the hole transport layer is less than 0.9 eV.

Abstract: A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

Abstract: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

Abstract: An image sensor includes a substrate and a first photodiode (PD) having a first size in the substrate. The image sensor further includes a second PD having a second size in the substrate, wherein the first size is different from the second size. The image sensor further includes a first buffer layer over the substrate. The image sensor further includes a shield layer over the first buffer, wherein the first buffer layer and the shield layer define a first recess aligned with the first PD and a second recess aligned with the second PD. The image sensor further includes a flicker reduction layer in the first recess, wherein the second recess is free of the flicker reduction layer.

Abstract: An organic EL device is constructed with a structure that can prevent deterioration in characteristics. An organic EL device is provided that includes at least two or more subpixels each including an organic compound layer including at least a light-emitting layer that emits light of a different color from the other light-emitting layer(s), the organic compound layer being interposed between a first electrode and a second electrode in a stacking manner, the subpixels being disposed separately from one another on a plane perpendicular to a direction of the stacking. Lateral surfaces of the organic compound layers are covered with films differing from subpixel to subpixel. This structure can prevent the organic EL device from deterioration in characteristics.

Abstract: The present invention discloses a ternary polymer solar cell. A photoactive layer of the ternary polymer solar cell includes two non-fullerene electron acceptors with large planarity. The weight percentage composition of the photoactive layer in the ternary polymer solar cell is: 41.6-50% of polymer electron donor, 0-50% of polymer electron acceptor, and 0-50% of non-fullerene perylene diimide (PDI) electron acceptor. The non-fullerene PDI electron acceptor is added into the photoactive layer to broaden the spectral absorption of the photoactive layer, improve the phase separation of the photoactive layer and inhibit the recombination of bimolecular charges, resulting in more efficient generation and transport of charges, thereby increasing a short-circuit current density of the ternary polymer solar cell device, and finally improving the power conversion efficiency of the ternary polymer solar cell device. Moreover, a new direction is provided for the selection of the all-polymer non-fullerene acceptor.

Abstract: Organic photovoltaic cells (OPVs) and their compositions are described herein. one or more embodiments, the acceptor with an active layer of an OPV includes is a non-fullerene acceptor. Such non-fullerene acceptors may provide improved OPV performance characteristics such as improved power conversion efficiency, open circuit voltage, fill factor, short circuit current, and/or external quantum efficiency.

Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

Abstract: A touch display device is provided, which includes an organic light-emitting diode display panel, the organic light-emitting diode display panel includes support pillars and a cathode, a part of the cathode is formed on the support pillars; a touch layer includes an insulation layer and a first conductive layer, the insulation layer is provided with protrusions, a part of the first conductive layer is positioned on a side of the protrusions away from the cathode, and orthographic projections of the protrusions on the touch display device at least partially coincide with orthographic projections of the support pillars on the touch display device.

Abstract: Electromagnetic interference (EMI) shields and methods for broadband EMI shielding are provided. An EMI shield disposed in a path of electromagnetic radiation blocks a broad range of frequencies (>about 800 MHz to <about 90 GHz) to a shielding efficiency of >to 20 dB, while transmitting wavelengths in a visible range to an average transmission efficiency of >about 85% through the electromagnetic shield. The shield includes a flexible stack comprising a continuous ultrathin metal film comprising silver (Ag) and copper (Cu) and two antireflection dielectric layers disposed on either side of the ultrathin metal film. The shield may also include multiple stacks or an optional graphene layer that may be spaced apart from the flexible stack to achieve radiofrequency (RE) absorption, which provides additional form of EMI shielding. The EMI shield can be made via roll-to-roll sputtering.

Abstract: A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a substrate. A stack comprising vertically-alternating first tiers and second tiers is formed above the conductor tier. The stack comprises laterally-spaced memory-block regions that have horizontally-elongated trenches there-between. Channel-material strings extend through the first tiers and the second tiers. Material of the first tiers is of different composition from material of the second tiers. A lowest of the first tiers comprises sacrificial material of different composition from the first-tier material there-above and from the second-tier material tier there-above. The sacrificial material is of different composition from that of an uppermost portion of the conductor material of the conductor tier.

Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.

Abstract: An organic light-emitting diode (OLED) display screen and an OLED display device are provided. The OLED display screen has a first display region, a second display region, and a folded display region. A bonding region is disposed on a side edge of the second display region away from the folded display region. Only part of a first backplate disposed on the second display region close to the bonding region is retained and replaced with a buffer layer to ensure stability of a shape of the folded display region and prevent wave warping.

Abstract: A method of forming a Pb-free perovskite film is provided, the method based on vacuum evaporation and comprising: first depositing a first material comprising Sn halide on a substrate to form a first layer; second depositing a second material comprising organic halide to form a second layer on the first layer to obtain a sequentially-deposited two-layer film on the substrate; and annealing the sequentially-deposited two-layer film on the substrate. During the annealing, the first and second materials inter-diffuse and react to form the Pb-free perovskite film. The second layer is formed to cover the first layer so as to prevent the first layer from air exposure. The solar cell device including the Pb-free perovskite film formed by using the present method exhibits good stability.

Abstract: A manufacturing method of a flexible OLED panel, a flexible OLED panel, and a display is disclosed. The flexible OLED panel is manufactured by the manufacturing method, and the display includes the flexible OLED panel. The disclosure functions as a role of blocking crack diffusion by forming the opening holes in the inorganic layer to release the cracking stress; the opening holes are arranged in at least two rows, and two of the rows of the opening holes adjacent to each other are arranged in a dislocation manner in the surrounding direction so as to distribute at least one of the opening holes on a line connecting any position on the boundary of the second area away from the first area to any position of the display area, the diffusion of cracks at any position in the inorganic layer can be blocked by at least one of the opening holes.

Abstract: A solar cell includes: a first electrode; a first hole transport layer containing nickel; an inorganic material layer containing titanium; a light-absorbing layer converting light into electric charge; and a second electrode. The first electrode, the first hole transport layer, the inorganic material layer, the light-absorbing layer, and the second electrode are layered in that order. The light-absorbing layer contains a perovskite compound represented by a formula AMX3, where A is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

Abstract: A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

Abstract: An electroluminescent device described herein, in one aspect, comprises a first electrode and second electrode and a light emitting layer positioned between the first and second electrodes. A current injection gate is positioned between the first electrode and the light emitting layer or the second electrode and the light emitting layer. In some embodiments, the current injection gate comprises a semiconductor layer of electronic structure restricting injected current flow from the first or second electrode through the semiconductor layer as a function of alternating current voltage frequency applied to the first and second electrodes.

Abstract: The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.

Abstract: Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation are provided. An example method includes forming a dopant-containing amorphous silicon layer stack on at least one portion of a surface of a crystalline semiconductor layer; and irradiating a selected area of the dopant-containing amorphous silicon layer stack, wherein the selected area of the dopant-containing amorphous silicon layer stack interacts with an upper portion of the underlying crystalline semiconductor layer to form a doped, conductive crystalline region, and each non-selected area of the dopant-containing amorphous silicon layer stack remains intact on the at least one portion of the surface of the crystalline semiconductor layer.

Abstract: The invention relates to a laminar body for making greenhouse roofs, comprising at least one laminar layer, which defines at least one main surface of the laminar body and comprises a polymer matrix and nano-particles of titanium dioxide TiO2 in the anatase and/or rutilium form, dispersed in the polymer matrix. The nano-particles have dimensions not greater than 100 nm. The titanium dioxide is present with a concentration in weight of between ?30 and 1500 ppm in relation to the polymer matrix. The invention also relates to a method of greenhouse cultivation and the use of the laminar body according to the invention for making greenhouse roofs. The invention also relates to a greenhouse having a roof comprising at least one laminar body according to the invention and to a masterbatch for making a laminar layer of a laminar body according to the invention.

Abstract: A flexible multilayer scattering substrate is disclosed. Built on a flexible supporting layer, the multilayer contains one or more scattering layers and other functional layers so that it can extract the trapped light in substrate and waveguide of an OLED. The processing of each layer is fully compatible with large area, flexible OLED manufactory, and by controlling processing conditions of each incorporated layer, the substrate microstructure can be tuned. Topographic features can be created on the top surface of substrate by changing the thickness and properties of the multilayer.

Abstract: Disclosed herein are processes for fabricating organic photosensitive optoelectronic devices with a vertical compositionally graded organic active layer. The processes use either a single-stamp or double-stamp printing technique to transfer the vertical compositionally graded organic active layer from a starting substrate to a device layer.

Abstract: An organic EL device according to the present invention includes: a first structure section; and a second structure section. The first structure section includes: a recess; a reflection layer provided along an inner surface of the recess; a filling layer filled at an inner side of the recess via the reflection layer; a first electrode; an organic layer including a light-emitting layer; and a second electrode. The second structure section includes: a reflection layer provided on a flat surface of the base material; a first electrode; an organic layer including a light-emitting layer; and a second electrode.

Abstract: A conjugated polymer for electronic devices can include a repeated unit having the structure of formula (I)

Abstract: A method of forming perovskite thin films with micron-sized perovskite grains is provided. A layer of PbX2 in a solution containing a metal ion additive is applied to a structure. The structure with the PbX2 layer is annealed a first time. The PbX2 is exposed to CH3NH3X in a solvent. The structure with the exposed PbX2 layer is annealed a second time resulting in a CH3NH3PbX3 layer. X is selected from a group consisting of Cl, Br, I, CN, and SCN.

Abstract: A method comprises removing a dummy gate electrode layer to form a gate trench in a dielectric layer over a substrate, forming a resistor trench over the substrate, depositing a plurality of films on a bottom of the gate trench, a bottom of the resistor trench, sidewalls of the gate trench and sidewalls of the resistor trench, depositing a gate electrode layer over the plurality of films and removing an upper portion of the gate electrode layer until the gate electrode layer is removed from the resistor trench.

Abstract: A method of manufacturing an organic solar cell is provided. According to the exemplary embodiments of the present invention, a laminate section can be easily removed from a substrate by causing a cleaning unit to move up and down above the substrate or to move forward and backward in a reciprocating manner in the width direction of the substrate. Furthermore, when a contact member is detachably connected to the cleaning unit, the contact member that has been contaminated with a laminate material can be separated from the cleaning unit and easily washed. Also, the laminate section can be removed by spraying a solvent through a discharging unit to dissolve the laminate section, and suctioning the laminate section through a suctioning unit. In this case, the laminate section can be easily removed from the substrate by dissolving the laminate section with the solvent.

Abstract: The present disclosure relates to microstructure devices, in which a conductive pattern is formed on the basis of a conductive polymer material. In order to avoid the deposition and processing of the sacrificial materials and reduce a negative influence of the lithography process on sensitive conductive polymer materials a one-layer patterning sequence is proposed, in which a trench pattern is formed in a dielectric material that is subsequently filled with the conductive polymer material.

Abstract: A method of making a stack of the type comprising a first electrode, an active layer, and a second electrode, for use in an electronic device, in particular of the organic photodetector type or the organic solar cell type, the method comprising the following steps: a) depositing a first layer (2) of conductive material on a substrate (1) in order to form the first electrode; b) depositing an active layer (3) in the form of a thin organic semiconductor layer, this layer including non-continuous zones (30); c) locally eliminating the first conductive layer (2) through the non-continuous zones (30) of the active layer by chemical attack; and d) depositing a second layer (4) of conductive material on the active layer (3) in order to form the second conductive electrode.

Abstract: A sealing film includes a first inorganic layer that has, in a surface thereof, a convex portion corresponding to an upper surface of an element layer, a second inorganic layer that covers the first inorganic layer, and an organic layer disposed between these layers. The surface of the first inorganic layer includes a recurved area changed from an area around the convex portion to the convex portion, and a flat area surrounding the element layer. The flat area includes an outer peripheral area on an outer end of the first inorganic layer, and an inner peripheral area between the outer peripheral area and the recurved area. The organic layer has an end in the outer peripheral area, has another portion in the recurved area, and avoids the inner peripheral area. A part of the second inorganic layer contacts the first inorganic layer in the inner peripheral area.

Abstract: The organic electroluminescence display device has a laminated portion on a base substrate. The device may have a cavernous portion formed by exploding a part of the laminated portion in a screening processing. A protective layer is formed to cover a whole surface of a wall defining the cavernous portion. Therefore, substances contained in the air are prevented from contacting to an organic electroluminescence layer at least partially defining the cavernous portion. Therefore, even if moisture is contained in the air, it is possible to prevent moisture from being absorbed by the organic electroluminescence layer. Moreover, since moisture is not absorbed by the organic electroluminescence layer, it is possible to reduce irregular spot on the device. In addition, it is possible to reduce a short circuit at an open defective portion.

Abstract: A method for manufacturing an organic electroluminescence device includes: preparing the organic electroluminescence device that includes a lower electrode, an organic layer including a light-emitting layer and formed on the lower electrode, an upper electrode formed on the organic layer, and an encapsulating layer formed on the upper electrode, and has a part in which the lower electrode and the upper electrode are shorted; and forming a mixed layer in which a constituent material of the upper electrode and at least one of constituent materials of the organic layer and the thin-film encapsulating layer which are adjacent to the upper electrode are mixed, by irradiating at least one of the shorted part and a region around the shorted part with an ultrashort pulse laser.

Abstract: The present disclosure relates to gel-type polymer electrolyte for a dye-sensitized solar cell, a dye-sensitized solar cell comprising the gel-type polymer electrolyte, and a method for manufacturing the dye-sensitized solar cell.

Abstract: A deposition apparatus includes (i) a sheet including a slit area, first and second dummy slit areas, and a binding area; and (ii) a frame. The slit area has a plurality of patterning slits that are extended along a first direction and arranged along a second direction crossing the first direction. The first and second dummy slit areas are outside the slit area along the second direction and along the opposite direction to the second direction respectively and have a plurality of dummy slits. The binding area surrounds the slit area and the first and second dummy slit areas. The frame is attached to the binding area of the sheet and shields at least some of the plurality of dummy slits of the first and second dummy slit areas.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: An organic material for deposition that is used for dry deposition of an organic layer included in an organic photoelectric conversion element is provided in which the organic material contains an organic composition of the organic layer as a principal component, and a residual solvent content of the organic material for deposition is equal to or less than 3 mol %.

Abstract: Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.

Abstract: A semiconductor device containing a novel cyclosiloxane polymer showing electroconductivity or semiconductivity has a charge transport layer comprising a plasma polymer containing structural units (A) each having a transition metal as a central metal and structural units (B) each situated between structural units (A) adjacent to each other and having a cyclosiloxane skeleton. The charge transport layer is formed by plasma polymerization of an organic metal compound having the transition metal as the central metal and the cyclosiloxane compound in a reactor.

Abstract: An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a third insulating layer covering the source and drain electrodes, the third insulating layer being an organic insulating layer, a pixel electrode including a semi-transparent metal layer and having an end located in a trench formed around the first insulating layer, a fourth insulating layer including an opening exposing a top surface of the pixel electrode, the fourth insulating layer being an organic insulating layer, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.

Abstract: The present invention relates to an organic electrochemical device and a fabrication method thereof. The organic electrochemical device according to the present invention comprises: a substrate; a first electrode provided on the substrate; an intermediate layer provided on the first electrode; a second electrode provided on the intermediate layer; and a first organic material layer, in which at least a part of the first organic material layer is in contact with the second electrode and the intermediate layer.

Abstract: The present invention relates to a method for the deposition of at least one layer of an organic material on a substrate by (a) providing a source of a solid organic material in an atmosphere at a pressure comprised between 50 and 200 kPa, (b) heating said organic material to a first temperature to produce a vapor of said organic material, (c) exposing at least one surface of a substrate having a second temperature lower than said first temperature to said vapor to deposit organic material from said vapor onto said at least one surface of said substrate.

Abstract: Discussed is a method of fabricating an organic light emitting diode display device capable of simplifying a manufacturing process by forming a photoresist pattern to cover a metal pattern to prevent a hole common layer and an electron common layer from being formed on the metal pattern.

Abstract: The present invention provides a preparation method for organic solar cells having conductive nanorods. In the process of solar cells, the present invention etches the indium-tin-oxide layer, which used as the anode, using etching fluid and forms the structure of the conductive nanorods thereon. Thereby, the distance of the holes in the active layer conducted to the anode is shorted. Besides, the light scattering or the transmittivity of the indium-tin-oxide layer is increased, which improves the efficiency of photoelectric conversion in organic solar cells.

Abstract: Disclosed is a method of making axially fluorinated metal phthalocyanines and their use in photovoltaic applications.

Abstract: An organic light emitting diode display device, comprises: a thin film transistor on a substrate; a first insulating layer on the thin film transistor; a connecting electrode connected to the thin film transistor and a first auxiliary electrode on the first insulating layer; a second insulating layer on the connecting electrode and the first auxiliary electrode; an anode connected to the connecting electrode and a second auxiliary electrode spaced apart from the anode and connected to the first auxiliary electrode on the second insulating layer; a bank layer having a first contact hole exposing the anode and a second contact hole exposing the second auxiliary electrode on the anode and the second auxiliary electrode; an organic emitting layer on the anode in the first contact hole; and a cathode electrically connected to the second auxiliary electrode on the organic emitting layer.

Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.

Abstract: An apparatus includes a substrate; and a photoactive layer disposed on the substrate. The photoactive layer includes an electron acceptor material; an electron donor material; and a material having dipoles.

Abstract: The invention relates to formulations comprising ionic organic compounds for use in electron transport layers or electron collecting layers of organic electronic (OE) devices, more specifically in organic photovoltaic (OPV) devices, to electron transport layers comprising or being made through the use of such formulations, and to OE and OPV devices comprising such formulations or electron transport layers.