Involving Schottky Contact Formation (437/39) Patents (Class 438/FOR173)
Foreign Patent Art Collections
- Gate surrounded by dielectric layer, e.g., floating gate, etc. (437/43) (Class 438/FOR203)
- Adjusting channel dimension (437/44) (Class 438/FOR204)
- Active step for controlling threshold voltage (437/45) (Class 438/FOR205)
- Self-aligned (437/41 R) (Class 438/FOR185)
- With bipolar (437/41 RBP) (Class 438/FOR186)
- CMOS (437/41 RCM) (Class 438/FOR187)
- Lightly doped drain (437/41 RLD) (Class 438/FOR188)
- Memory devices (437/41 RMM) (Class 438/FOR189)
- Asymmetrical FET (437/41 AS) (Class 438/FOR190)
- Channel specifics (437/41 CS) (Class 438/FOR191)
- DMOS/vertical FET (437/41 DM) (Class 438/FOR192)
- Gate specifics (437/41 GS) (Class 438/FOR193)
- Junction FET/static induction transistor (437/41 JF) (Class 438/FOR194)
- Layered channel (437/41 LC) (Class 438/FOR195)
- Specifics of metallization/contact (437/41 SM) (Class 438/FOR196)
- Recessed gate (Schottky falls below in SH) (437/41 RG) (Class 438/FOR197)
- Schottky gate/MESFET (437/41 SH) (Class 438/FOR198)
- Sidewall (437/41 SW) (Class 438/FOR199)
- Thin film transistor, inverted (437/41 TFI) (Class 438/FOR200)
- Thin film transistor (437/41 TFT) (Class 438/FOR201)
There are no patents to show for this class.
