Gate Structure Constructed Of Diverse Dielectrics (437/42) Patents (Class 438/FOR202)

Gate surrounded by dielectric layer, e.g., floating gate, etc. (437/43) (Class 438/FOR203)

Adjusting channel dimension (437/44) (Class 438/FOR204)

Active step for controlling threshold voltage (437/45) (Class 438/FOR205)

Self-aligned (437/41 r) (Class 438/FOR185)

With bipolar (437/41 rbp) (Class 438/FOR186)

Cmos (437/41 rcm) (Class 438/FOR187)

Lightly doped drain (437/41 rld) (Class 438/FOR188)

Memory devices (437/41 rmm) (Class 438/FOR189)

Asymmetrical fet (437/41 as) (Class 438/FOR190)

Channel specifics (437/41 cs) (Class 438/FOR191)

Dmos/vertical fet (437/41 dm) (Class 438/FOR192)

Gate specifics (437/41 gs) (Class 438/FOR193)

Junction fet/static induction transistor (437/41 jf) (Class 438/FOR194)

Layered channel (437/41 lc) (Class 438/FOR195)

Specifics of metallization/contact (437/41 sm) (Class 438/FOR196)

Recessed gate (schottky falls below in sh) (437/41 rg) (Class 438/FOR197)

Schottky gate/mesfet (437/41 sh) (Class 438/FOR198)

Sidewall (437/41 sw) (Class 438/FOR199)

Thin film transistor, inverted (437/41 tfi) (Class 438/FOR200)

Thin film transistor (437/41 tft) (Class 438/FOR201)

There are no patents to show for this class.