Abstract: An abrasive article comprising a substrate having an elongated body and abrasive particles attached to the elongated body, the content of the abrasive particles oscillates along the length of the body between a minimum and maximum value, and the minimum content is greater than 0.

Abstract: Methods for manufacturing a diffuser plate for a PECVD chamber are provided. The methods provide for applying a compliant abrasive medium to round the sharp edges at corners of the output holes on a contoured downstream side of a gas diffuser plate. By rounding the edges of the output holes reduces the flaking of deposited materials on the downstream side of the gas diffuser plate and reduces the amount of undesirable particles generated during the PECVD deposition process.

Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.

Abstract: An abrasive article including a substrate as an elongated member, a first layer overlying the substrate, abrasive particles overlying the first layer, fillets connecting the first layer and the abrasive particles, a bonding layer overlying the abrasive particles, the first layer and the fillets, and the fillets have a fillet characteristic relative to an abrasive application, the fillet characteristic selected from the group consisting of tacking factor (tfl/tf), a fillet-to-particle factor (tf/dab), a fillet-to-bonding layer factor (tf/tbl), a contact factor (Ab/Af), a fillet size variance (Vf), and a combination thereof.

Abstract: A polishing pad for chemical mechanical polishing includes at least a polishing layer whose polishing surface includes a first groove and a second groove, the first and second grooves have side surfaces, which are continuous with the polishing surface, on each edge in a groove width direction, the first groove has an angle of larger than 105 degrees and 150 degrees or smaller, which is formed between the polishing surface and the side surface continuous with the polishing surface, on at least one edge in the groove width direction, and the second groove has an angle of 60 degrees or larger and 105 degrees or smaller, which is formed between the polishing surface and the side surface continuous with the polishing surface, on both of two edges in the groove width direction.

Abstract: An electrodeposited wire tool has a core wire extending in a longitudinal direction, a plating layer provided on an outer peripheral surface of the core wire, superabrasive grains held by the plating layer and coating layers covering the outer peripheral surfaces of the superabrasive grains. The coating layers are constituted of electroless Ni—P platings. The coating layers are heat-treated, and the electroless Ni—P platings are partially or entirely crystallized.

Abstract: Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: Provided is a seamless polishing pad comprising a seamless polishing layer having a substantially uniform depth of penetration into a porous subpad. In one embodiment, the polishing pad comprises a polishing layer produced by applying to the subpad a hardenable fluid. In another embodiment, the subpad is coated with a barrier before coating with the hardenable fluid. In each embodiment, the depth of penetration of the polishing layer and/or barrier is substantially uniform. Also provided is a method of producing a seamless polishing pad comprising a seamless polishing layer having a substantially uniform depth of penetration into a porous subpad.

Abstract: An abrasive article, such as a structured abrasive article, can be treated by subjecting it to plasma whereby the outer surface can be eroded exposing at least a portion of the abrasive particles dispersed within a cross-linked binder forming the abrasive composites. Depending on the process conditions for the plasma treatment, it is possible to erode only a small portion or substantially all of the cross-linked binder from the outer surface. Thus, the initial cut-rate of the abrasive article can be controlled since it is possible to precisely control the degree, height, or area of the exposed abrasive particles.

Abstract: A polishing pad, comprising a mounting surface and an opposing polishing surface with a polishing pattern having at least one aperture thereon, is formed with an adhesive layer adhered to the mounting surface with uniform adhesive strength therebetween. Embodiments include applying an adhesive layer to the mounting surface with uniform pressure prior to forming the polishing pattern on the polishing surface. Embodiments also include forming the polishing pattern having at least one aperture, forming a fitter having a surface pattern opposite to the polishing pattern and having a projection, positioning the fitter on the polishing pattern so that the projection fills the aperture in the polishing pattern forming a composite having substantially parallel opposing surfaces, applying pressure to bond the adhesive layer to the mounting surface with substantially uniform adhesive strength therebetween, and removing the fitter.

Abstract: Processing pads for mechanical and/or chemical-mechanical planarization or polishing of substrates in the fabrication of microelectronic devices, methods for making the pads, and methods, apparatus, and systems that utilize and incorporate the processing pads are provided. The processing pads include grooves or other openings in the abrading surface containing a solid or partially solid fill material that can be selectively removed as desired to maintain the fill at an about constant or set distance from the abrading surface of the pad and an about constant depth of the pad openings for multiple processing and conditioning applications over the life of the pad.

Abstract: A polishing pad of excellent durability has a polishing layer is arranged on a base material layer, and the polishing layer comprises a thermosetting polyurethane foam having roughly spherical interconnected cells with an average cell diameter of 35 to 300 ?m.

Abstract: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacturer may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

Abstract: A mix head assembly for use in the manufacture of chemical mechanical polishing pad polishing layers is provided, wherein inclusions of entrained gas inclusion defects are minimized.

Abstract: The present invention relates to a wire saw and a method for fabricating the same. The method for fabricating a wire saw according to the present invention includes: providing a core wire; coating an intermediate layer over the core wire, and embedding a plurality of abrasives in the intermediate layer; and plating a metal protective layer over the abrasives. Accordingly, the present invention can resolve the conventional problem of abrasives in the plating bath aggregating during electroplating deposition, so as to enhance cutting quality and precision.

Abstract: A method for manufacturing chemical mechanical polishing pad polishing layers that minimizes entrained gas inclusion defects is provided. Also provided is a mix head assembly for use in the manufacture of chemical mechanical polishing pad polishing layers, wherein inclusions of entrained gas inclusion defects are minimized.

Abstract: A polishing pad having a novel structure, which is applicable to highly accurate various polishing process, such as a CMP process, is provided. An annular rear plane groove (22) extending in a circumferential direction is formed on a rear plane (20) of the polishing pad.

Abstract: There is provided a method for producing a chemical mechanical polishing pad, the method comprising the steps of (1) producing a sheet-shaped polymer molded article and (2) irradiating the sheet-shaped polymer molded article with an electron beam within an irradiation dose of 10 to 400 kGy. A chemical mechanical polishing pad produced by the above method has advantages that it is excellent in removal rate and scratches and in-plane uniformity on a polished surface and that it shows a stable removal rate even when polishing a number of objects to be polished successively.

Abstract: A surface treatment or a two-step injection molding is used to make an inlaid polishing pad. A surface of the inlaid polishing pad has areas of different rigidity to control the rigidity and compressibility of the inlaid polishing pad. Furthermore, methods of making such an inlaid polishing pads are also disclosed.

Abstract: Provided is a method of polishing comprising providing a workpiece, providing a fixed abrasive article, providing conditioning particles, and relatively moving the workpiece and the fixed abrasive article in the presence of the conditioning particles to modify the surface of the workpiece and to condition the fixed abrasive. The fixed abrasive article comprises a substrate having a first surface and a region of abrasive composites distributed on the first surface of the substrate. The abrasive composites include a composite binder and abrasive particles, which may be in abrasive agglomerates together with a matrix material. The abrasive particles are harder than the workpiece. The conditioning particles are sufficient to condition one or more of the composite binder, matrix material, and abrasive agglomerates. The hardness of the conditioning particles is less than the hardness of the workpiece and they do not substantially polish the workpiece.

Abstract: A chemical mechanical polishing apparatus includes a platen, a polishing pad affixed to a surface of the platen, and a polishing head configured to retain and rotate a wafer while pressing a surface of the rotating wafer against the polishing pad. A first portion of the polishing pad that engages the polishing head proximate the edge of the wafer provides less rigidity than a second portion of the polishing pad that engages a portion of the surface of the wafer. For example, the polishing pad and/or the platen may have a recess or other cushioning structure positioned proximate a locus of movement of a portion of the polishing head that supports the edge of the wafer.

Abstract: There is provided a fixed abrasive wire having abrasives fixed thereon with a superior fixing strength. The abrasives are fixed on the wire by electroplating in which the wire is subjected to a degreasing step, an acid cleaning step, a rinsing step and an electroplating step sequentially. A plating liquid used in the electroplating step contains a nickel-containing organic acid or a nickel-containing inorganic acid, a leveling agent, and the abrasives. It is a feature that a plated coat being over the top of each of the abrasives has a smaller thickness than a theoretical value.

Abstract: The invention relates to an abrasive product intended to be driven in a particular grinding direction over the object to be abraded. The abrasive product is composed of parallel threads placed at a distance from one another and running in the grinding direction and transverse abrasive threads provided with an abrasive coating placed at a distance from one another and fastened to the parallel threads. The open structure allows to easily remove the grindings from the abrasive product during abrasion, thus extending the working life of the abrasive product.

Abstract: A top layer comprises a flexible support and a plurality of hard elements anchored in a binder over the flexible support, and a method of forming the same is provided. In one embodiment, certain ones of the hard elements have a contact surface adapted to contact the conductive surface, with the binder being disposed below the contact surface of each of the certain ones of the hard elements. In another embodiment, the top layer comprises a flexible support, a plurality of hard elements are anchored in a binder over the flexible support such that certain ones of the hard elements have a top surface and the binder is disposed below the top surface of each of the certain ones of the hard elements, and a hard material coating is disposed over the plurality of hard elements and the binder, thereby creating a contact surface of the hard material coating at locations corresponding to the top surface of the certain ones of the hard elements.

Abstract: The invention provides a chemical-mechanical polishing pad comprising a polishing layer comprising a hydrophobic region, a hydrophilic region, and an endpoint detection port. The hydrophobic region is substantially adjacent to the endpoint detection port. The hydrophobic region comprises a polymeric material having a surface energy of 34 mN/m or less and a polymeric material having a surface energy of more than 34 mN/m. The invention further provides a method of polishing a substrate comprising the use of the polishing pad.

Abstract: The polishing pad of this invention is a polishing pad effecting stable planarizing processing, at high polishing rate, materials requiring surface flatness at high level, such as a silicon wafer for semiconductor devices, a magnetic disk, an optical lens etc. This invention provides a polishing pad which can be subjected to surface processing to form a sheet or grooves, is excellent in thickness accuracy, attains a high polishing rate, achieves a uniform polishing rate, and also provides a polishing pad which is free of quality variations resulting from an individual variation, easily enables a change the surface patterns, enables fine surface pattern, is compatible with various materials to be polished, is free of burrs upon forming the pattern. This invention provides a polishing pad which can have abrasive grains mixed at very high density without using slurry, and generates few scratches by preventing aggregation of abrasive grains dispersed therein.

Abstract: Provided is a fixed abrasive article for polishing a workpiece having a hardness comprising (a) a substrate having a first surface and a second surface, (b) a region of abrasive composites distributed on the first surface of the substrate, and (c) a region of conditioning amalgams distributed on the first surface of the substrate. The abrasive composites include a composite binder and abrasive particles of a first hardness, which first hardness is higher than the hardness of the workpiece. The amalgams include an erodible binder and conditioning particles sufficient to condition the composite binder and having a second hardness, which second hardness is less than the hardness of the workpiece and greater than the hardness of the composite binder. Also provided are other abrasive articles, and methods of making them.

Abstract: The present invention provides a polishing pad for performing chemical mechanical planarization of semiconductor substrates. The polishing pad comprises a polishing pad body having an aperture formed therein and a window fixed in the aperture for performing in-situ optical measurements of the substrate. The window has a lower surface capable of transmitting light incident thereon. The lower surface has been treated by laser ablation to remove surface roughness present on the lower surface.

Abstract: A polishing apparatus includes a plurality of polishing fluid supply openings terminating in a polishing surface of a polishing table, and a plurality of grooves which are formed in the polishing surface and arranged so as not to be in direct communication with the polishing fluid supply openings. The polishing apparatus further includes a polishing fluid supply system for supplying a polishing fluid to a surface of a substrate through the openings. The grooves may extend at right angles relative to one another so as to define a plurality of lands therebetween, and the polishing fluid supply openings are formed through the lands.

Abstract: An abrasive pad having dots of abrasive material disposed thereon includes a central alignment hole. The abrasive pad is formed by slipping a backing pad having a central alignment hole onto an alignment stud that extends from a support surface through the central alignment hole. A mold having a plurality of fill holes and an alignment hole is then placed against the backing pad such that a portion of the alignment stud extends into the mold alignment hole. A mixture of abrasive material is deposited into the fill holes. Heat is applied and the mold is removed. The abrasive material is allowed to cure to create an abrasive pad having abrasive dots.

Abstract: A flexible file system for providing abrasive files that can be used for wood or metal working that can be supplied in different sizes, stiffness and with different types of abrasive surfaces in different cross-sections. These flexible files can be attached to form a web that can be loaded into a dispenser either on a spindle or folded for easy dispensing of files as they are needed. The dispenser can have optional blades for separating the files as they are dispensed. Various methods can be used to attach the files into a web for easy dispensing and later separation including attach strips with cut or break points.

Abstract: An article or polishing pad for altering a surface of a work piece includes a polymer matrix created by reaction injection molding of size controlled gas bubbles within a polyurethane matrix. The proposed liquid urethane precursor is first injected into an actuated mold and cured. The molded product is then removed from the mold and double side faced or ground to form a single thin polishing pad comprising a single layer of homogeneous material.

Abstract: A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.

Abstract: A polishing pad (104, 300, 400, 500) for polishing a wafer (112, 516), or other article. The polishing pad includes a polishing layer (108) having a polishing region (164, 320, 420, 504) defined by first and second boundaries ((168, 172), (312, 316), (412, 416) (508, 512)) having shapes and locations that are a function of the size of polished surface (116) of the article being polished and the type of polisher (100) used. The polishing region has several zones ((Z1–Z3) (Z1?–Z3?)(Z1?–Z3?)(Z1??–Z3??)) each containing corresponding grooves ((148, 152, 156)(304, 308, 324)(404, 408, 424)(520, 524, 528)) having orientations selected based on the direction of one or more velocity vectors (V1–V4)(V1?–V4?)(V1?–V4?) (V??–V4??) of the wafer in that zone.

Abstract: The present invention describes a method for creating a differential polish rate across a semiconductor wafer. The profile or topography of the semiconductor wafer is determined by locating the high points and low points of the wafer profile. The groove pattern of a polish pad is then adjusted to optimize the polish rate with respect to the particular wafer profile. By increasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be increased in the areas that correspond to the high points of the wafer profile. By decreasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be decreased in the areas that correspond to the low points of the wafer profile. A combination of these effects may be desirable in order to stabilize the polish rate across the wafer surface in order to improve the planarization of the polishing process.

Abstract: An assembly for a chemical-mechanical polishing process includes a platen having an outer edge, a top surface, and at least one inlet for introducing fluid to the top surface; a manifold system, entrenched in the top surface and in communication with the at least one inlet, for channeling the fluid about the top surface; a polishing pad having a top pad surface, and a plurality of fluid delivery through-holes for introducing the fluid from the manifold system to the top pad surface; and a fluid distribution system, entrenched in the top pad surface and in communication with the through-holes, for substantially uniformly distributing the fluid about the top pad surface. The fluid distribution system includes a set of intersecting first grooves defining an array of lands, each of the first grooves having a first cross sectional area.

Abstract: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacture may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

Abstract: An object of the present invention is to provide a polishing pad for a semiconductor wafer which can perform a stable polishing while preventing a polishing layer from floating up from a supporting layer and a surface of a polishing pad from bending during polishing using a polishing pad having a multi-layered structure of a polishing layer and a supporting layer, and a polishing process using thereof. The polishing pad of the present invention is characterized in that it is comprising a supporting layer which is a non-porous elastic body and a polishing layer which is laminated on one surface of the supporting layer, and a polishing process using thereof. Shore D hardness of the polishing layer is preferably 35 or more, and hardness of the supporting layer is preferably lower than that of the polishing layer.

Abstract: The invention provides a backing for an abrasive article comprising a sheet-like polymeric substrate having a first major surface including a pattern of non-abrasive raised areas and depressed areas and an opposite second major surface including a plurality of shaped engaging elements that are one part of a two-part mechanical engagement system. An abrasive product is provided by coating at least the raised areas of the backing with an abrasive coating.

Abstract: The invention concerns a polishing or lapping device comprising a surface whereon parts to be polished are to be applied, with an interposed abrasive suspension, and with a certain pressure. The invention is characterized in that said surface comprises a plurality of recessed parts (1, 16, 17) forming reservoirs for the abrasive suspension independent of one another and said recessed parts (1, 6, 17) are defined by partitions (2, 26, 27) whereof the top walls (20), co-operating with said abrasive suspension, form active zones for lapping or polishing, said partitions (2, 26, 27) having a substantially constant height over the whole surface of the device, before it is used. The invention is useful for polishing or lapping metal parts.

Abstract: A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foam 12 having fine and uniform cells 20 suitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used.

Abstract: A chemical mechanical polishing to polish a substrate having a layer to be polished thereon is described. A pre-polishing process is performed using a softer polishing pad to remove partially raised parts of the layer to be polished before conducting a polishing process using a harder polishing pad. Since the first polishing pad is flexible, porous and with low density, the first polishing pad can be deformed to increase contact areas between the first polishing pad and the raised part of the layer to be polished, and the abrasives are embedded easily in holes of the surface of the first polishing pad. Ultimately, the layer to be polished can be polished directly during the pre-polishing process. Therefore, the processing time is reduced, the consumption of the slurry is decreased and the process cost can be cut down substantially.

Abstract: A conical disk having an obtuse angle that is attached to a rotary tool, like a power drill for example, as an accessory for the treatment and finishing, of surfaces, like sanding, for example. By virtue of its shape, the disk enables an even treatment of surfaces with a minimal effort, with uniform wear of the materials in friction, while preventing undesirable vibrations and forced operation that provoke continuous disengagement from the rotary tool. Other than its different shape, the disk (24) is similar to conventional disks, comprising basically two elements: A surface treating side (26) and attachment means (32).

Abstract: A cutting disc core for a circular shaped saw blade which has a circular shaped body which has a center hole and a circular peripheral edge upon which is to be mounted a plurality of spaced apart cutting segments that is to perform the cutting of the saw blade. Surrounding the center hole and formed within the body are a plurality of slits with there being a solid tab that is integrally connected to the body located between each directly adjacent pair of slits. The tab constitutes a frangible seal with the circular ring or bushing which is formed about the center hole to be removable by being forcibly physically separated from the body.

Abstract: Coated abrasive articles comprise a backing and an abrasive layer, wherein at the abrasive layer comprises a reaction product of components comprising polyfunctional acrylate, alicyclic polyepoxide, and aromatic polyepoxide having an average epoxy functionality of at least 2.5.

Abstract: Methods and apparatuses for planarizing a microelectronic substrate. In one embodiment, a planarizing pad for mechanical or chemical-mechanical planarization includes a base section and a plurality of embedded sections. The base section has a planarizing surface, and the base section is composed of a first material. The embedded sections are arranged in a desired pattern of voids, and each embedded section has a top surface below the planarizing surface to define a plurality of voids in the base section. The embedded sections are composed of a second material that is selectively removable from the first material. A planarizing pad in accordance with an embodiment of the invention can be made by constructing the embedded sections in the base section and then removing a portion of the embedded sections from the base section. By removing only a portion of the embedded sections, this procedure creates the plurality of voids in the base section and leaves the remaining portions of the embedded sections.

Abstract: Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished.

Abstract: Polishing pads are provided having a polishing surface formed from a material. The polishing surface has a topography produced by a thermoforming process. The topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and planarizing.

Abstract: Disclosed is a chemical mechanical polishing pad formed at a polishing surface thereof with a plurality of concentric wave-shaped grooves having different radiuses while having the same shape. Each groove has a desired depth, width, and shape. The chemical mechanical polishing pad provides effects of effectively controlling a flow of slurry during a polishing process, thereby achieving a stability in the polishing process in terms of a polishing rate, and achieving an enhancement in the planarization of a wafer.

Abstract: A cleaning sheet has a foamed sheet and a polishing layer with abrading particles on its surface. Mutually disconnected indentations are formed through the polishing layer reaching the foamed sheet in a uniform point pattern including a plurality of mutually adjacent ginkgo-leaf shaped figures for collecting cullet and dust particles therethrough into air bubbles opening on the upper surface of the foamed sheet.