Abstract: A pad conditioner for conditioning a polishing surface of a polishing pad includes a conditioning disk, a disk holder, and a disk arm. The conditioning disk includes a substrate plate and at least two abrasive segments. The conditioning disk includes at least one channel by which debris and spent slurry may be evacuated. The abrasive segments are on a surface of the substrate plate, and form at least one channel segment therebetween. Each channel segment extends from about the center of the surface to substantially the outer rim of the substrate plate. The disk holder to which the conditioning disk is mounted includes a through hole. The disk arm to which the conditioning disk is mounted includes an opening in fluid communication with the at least one channel segment via the through hole for evacuating the debris and spent slurry by a vacuum module.

Abstract: The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is a photopolymerizable composition containing a block copolymer, a UV curable acrylate, and a photoinitiator.

Abstract: An abrasive article can include a body including a bond material, abrasive particles, and a plurality of pores, wherein the bond material can comprise a vitreous material. In one embodiment, an average particle size of the abrasive particles can be between 0.1 microns to 5 microns, and a porosity of the body may be between 40 vol % to 70 vol %, wherein the porosity may define an average pore size (D50) of at least 0.1 microns and not greater than 5 microns.

Abstract: Disclosed is a magnetorheological-elastomer (MRE) polishing pad suitable for chemical mechanical polishing (CMP) of a semiconductor wafer, which simultaneously realizes high-efficiency magnetic control polishing and high-efficiency Fenton reaction, forms an organosilicon-polyurethane matrix through an organosilicon-modified polyurethane prepolymer, and combines the characteristics of high flexibility and excellent comprehensive mechanical properties of organosilicon. CIP@Fe3O4 composite magnetic particles in the polishing pad can make the MRE polishing pad exhibit a high magnetorheological effect, and the produced ·OH can oxidize a surface of the semiconductor wafer to generate an oxide layer, reducing the material removal difficulty of abrasive materials and the polishing pad under the mechanical action.

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

Abstract: A rest stop recommendation system monitors driving behavior of a driver and stores information indicating the driving behavior as historical data, determines, based at least in part on the historical data, a driver tiredness state, a continuous driving length preference, and a refueling pattern preference, determines a time to recommend a rest stop based at least in part on the driver tiredness state, the continuous driving length preference, and the refueling pattern preference, extracts, from a map database, a plurality of rest stops within a predetermined radius of a position of the vehicle, determines rest stop characteristic preferences based at least in part on the historical data, selects one or more potential rest stops from among the plurality of rest stops based at least in part on the rest stop characteristic preferences, and presents the one or more potential rest stops to the driver in a recommendation.

Abstract: CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of liquid aromatic diamine to the total moles of small chain difunctional polyols and liquid aromatic diamine ranges from 15:85 to 40:60, wherein, the reaction mixture comprises 48 to 68 wt. % hard segment materials.

Abstract: Systems and methods include providing a coated abrasive article with a substrate formed from a plurality of hygroscopic fibers, an abrasive layer comprising a make coat, a size coat, a supersize coat, or combinations thereof disposed on a first side of substrate, and an anti-curl layer disposed on a second side of the substrate. The polymer-based anti-curl layer allows the coated abrasive article to achieve a change in curl between ?5 millimeters and 25 millimeters, the change in curl being expressed as the curl of the coated abrasive article in millimeters at 90% relative humidity minus the curl of the coated abrasive article in millimeters at 20% relative humidity. The coated abrasive article exhibits substantially no loss of grinding performance, burst speed, or a combination thereof as compared to coated abrasive articles free of the anti-curl layer.

Abstract: Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

Abstract: Systems and methods are described for providing a representative, homogeneous, and planarized target for solid sample laser ablation. A method embodiment includes, but is not limited to, removing portions of a solid sample with an abrasive sampling system, the abrasive sampling system including at least one of a plurality of abrasive particles configured to hold the portions of the solid sample on an abrasive substrate between the abrasive particles or a texturized surface configured to hold the portions of the solid sample on the texturized surface; transferring the abrasive sampling system holding the portions of the solid sample to a laser ablation system; and ablating the portions of the solid sample held by the abrasive sampling system with the laser ablation system.

Abstract: A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.

Abstract: A polishing pad includes a polishing layer stack that has a polishing surface, a bottom surface, and an aperture from the polishing surface to the bottom surface. The polishing layer stack includes a polishing layer that has the polishing surface. A fluid-impermeable layer spans the aperture and the polishing pad. A first adhesive layer of a first adhesive material is in contact with and secures the bottom surface of the polishing layer to the fluid-impermeable layer. The first adhesive layer spans the aperture and the polishing pad. The light-transmitting body is positioned in the aperture and has a lower surface in contact with, is secured to the first adhesive layer, and is spaced apart from a side-wall of the aperture by a gap. An adhesive sealant of a different second material is disposed in and laterally fills the gap.

Abstract: An abrasive tool has an abrasive grain layer comprising a plurality of hard abrasive grains bonded by a binder, with a plurality of the hard abrasive grains each having a working surface formed to contact a workpiece, a ratio of a total area of a plurality of such working surfaces to an area of an imaginary plane smoothly connecting the plurality of working surfaces being 5% or more and 30% or less.

Abstract: Polishing pads having discrete and selectively arranged regions of varying porosity within a continuous phase of polymer material are provided herein. In one embodiment a polishing pad features a plurality of polishing elements each comprising a polishing surface and sidewalls extending downwardly from the polishing surface to define a plurality of channels disposed between the polishing elements, wherein one or more of the polishing elements is formed of a continuous phase of polymer material having one or more first regions comprising a first porosity and a second region comprising a second porosity, wherein the second porosity is less than the first porosity.

Abstract: The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.

Abstract: A method of fabricating a polishing layer of a polishing pad includes determining a desired distribution of particles to be embedded within a polymer matrix of the polishing layer. A plurality of layers of the polymer matrix is successively deposited with a 3D printer, each layer of the plurality of layers of polymer matrix being deposited by ejecting a polymer matrix precursor from a nozzle. A plurality of layers of the particles is successively deposited according to the desired distribution with the 3D printer. The polymer matrix precursor is solidified into a polymer matrix having the particles embedded in the desired distribution.

Abstract: Disclosed is a method for producing a polishing pad, the method comprising the steps of: providing a polishing layer; forming a first through-hole penetrating the polishing layer; providing a support layer facing the polishing layer; interposing an adhesive layer between the polishing layer, which has the first through-hole, and support layer, and adhering the polishing layer and support layer to each other by means of the adhesive layer; forming, with the first through-hole as a reference point, a third through-hole penetrating the adhesive layer on a set area thereof, and a second through-hole penetrating the support layer on a set area thereof; and inserting a window inside the first through-hole.

Abstract: Embodiments relate to a porous polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polishing pad can be adjusted in light of the volume thereof. Thus, the plurality of pores have an apparent volume-weighted average pore diameter in a specific range, thereby providing a porous polishing pad that is excellent in such physical properties as polishing rate and the like.

Abstract: Diamond-containing articles such as composite materials shaped as some specific article, can be engineered such that bodies that contact the article only contact diamond. In an embodiment, the article may be in the form of equipment for handling semiconductor wafers such as vacuum or electrostatic chucks. In one embodiment, the diamond-containing article can be a composite of diamond particulate reinforcing a Si/SiC body such as reaction-bonded SiC. Lapping the diamond-reinforced RBSC body with progressively finer diamond grit removes some of the SiC/Si matrix material, leaving diamond particles of uniform height “standing proud” above the rest of the surface of the formed article. Further, if the diamond-containing article is sufficiently electrically conductive, it may be machinable using electrical discharge machining.

Abstract: Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for producing the same. In the porous polyurethane polishing pad, it is possible to control the size and distribution of pores, whereby the polishing performance (i.e., polishing rate) of the polishing pad can be adjusted, by way of employing thermally expanded microcapsules as a solid phase foaming agent and an inert gas as a gas phase foaming agent.

Abstract: The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is prepared by extruding a compounded photopolymerizable composition followed by exposure to UV light.

Abstract: Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization and a process for preparing the same. It is possible to control the size and distribution of pores in the porous polyurethane polishing pad by using thermally expanded microcapsules and an inert gas as a gas phase foaming agent, whereby the polishing performance thereof can be adjusted.

Abstract: A fixed abrasive article having a body including abrasive particles contained within a bond material, the abrasive particles including shaped abrasive particles or elongated abrasive particles having an aspect ratio of length:width of at least 1.1:1, each of the shaped abrasive particles or elongated abrasive particles having a predetermined position or a predetermined three-axis orientation.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.

Abstract: A polishing pad is provided. The polishing pad comprises a polishing layer and a metal-containing layer. The polishing layer has a polishing surface and a backside surface opposite to each other, wherein the backside surface has a plurality of cavities. The metal-containing layer is disposed on the backside surface of the polishing layer and fills into the cavities, wherein a first contact area is between the metal-containing layer and the backside surface of the polishing layer, and the first contact area is larger than the orthogonal projection area of the polishing layer.

Abstract: The present invention provides a polishing pad for a wafer polishing apparatus, comprising: an upper pad having a front surface part, which has a cut surface and is in contact with a wafer, a rear surface part positioned on the lower part of the front surface part, and a plurality of grid grooves passing through the front surface part and the rear surface part; a lower pad, which is arranged on the lower part of the upper pad and can be attached to a surface plate; and an adhesion part positioned between the upper pad and the lower pad to couple the upper pad with the lower pad.

Abstract: A substrate processing apparatus includes a holder having thereon an attraction surface configured to attract a substrate and including an outer attracting member configured to attract a peripheral portion of the substrate and an inner attracting member configured to attract a portion of the substrate inside the peripheral portion of the substrate attracted by the outer attracting member in a diametrical direction of the attraction surface; a moving device configured to move the outer attracting member with respect to the inner attracting member; and a controller configured to control a distortion, which is caused at the substrate attracted to the attraction surface, by controlling a movement of the outer attracting member with respect to the inner attracting member.

Abstract: Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressing disk and the at least one conductive element.

Abstract: Embodiments relate to a leakage-proof polishing pad for use in a chemical mechanical planarization (CMP) process and a process for producing the same.

Abstract: A polishing pad, a polyurethane polishing layer and a preparation method thereof are provided, belonging to the technical field of polishing in chemical-mechanical planarization treatment. The polyurethane polishing layer having a coefficient of thermal expansion of 100-200 ppm/° C. comprises a reaction product produced by reacting of multiple components. The multiple components include an isocyanate-terminated prepolymer, a hollow microsphere polymer and a curing agent composition. The curing agent composition includes 5-55 wt % of an aliphatic diamine composition, 0-8 wt % of a polyamine composition and 40-90 wt % of an aromatic bifunctional composition. The polyurethane polishing layer has a density of 0.6-1.1 g/cm3, a Shore hardness of 45-70D and an elongation at break of 50-450%. The polyurethane polishing layer is prepared by a simple process with low cost and energy consumption.

Abstract: A polishing pad includes a polishing layer stack that has a polishing surface, a bottom surface, and an aperture from the polishing surface to the bottom surface. The polishing layer stack includes a polishing layer that has the polishing surface. A fluid-impermeable layer spans the aperture and the polishing pad. A first adhesive layer of a first adhesive material is in contact with and secures the bottom surface of the polishing layer to the fluid-impermeable layer. The first adhesive layer spans the aperture and the polishing pad. The light-transmitting body is positioned in the aperture and has a lower surface in contact with, is secured to the first adhesive layer, and is spaced apart from a side-wall of the aperture by a gap. An adhesive sealant of a different second material is disposed in and laterally fills the gap.

Abstract: A method of manufacturing an electronic device is provided to realize efficient large-scale transferring. The method includes locating a transfer film over a plurality of functional layers separated from each other over a source substrate; attaching a support frame to the transfer film, the support frame having a plurality of holes spaced apart from each other; removing the source substrate from the transfer film, with the plurality of functional layers being in close contact with a bottom surface of the transfer film; locating the transfer film over a target substrate, with the plurality of functional layers being in close contact with the bottom surface of the transfer film; detaching the support frame from the transfer film; and removing the transfer film from the target substrate.

Abstract: An abrasive article can include a substrate, abrasive particles coupled by a bond material to the substrate, and a coating overlying at least partially the exterior surface of the bond material. The coating can be a poly(p-xylylene) polymer applied via vapor deposition and may provide enhanced strength to the bond material and extended life time to the abrasive article.

Abstract: Low density polishing pads and methods of fabricating low density polishing pads are described. In an example, a polishing pad for polishing a substrate includes a polishing body having a density approximately in the range of 0.4-0.55 g/cc. The polishing body includes a thermoset polyurethane material and a plurality of closed cell pores dispersed in the thermoset polyurethane material. Each of the plurality of closed cell pores has a shell composed of an acrylic co-polymer.

Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.

Abstract: Corrosion inhibitor materials are provided that release active corrosion inhibitor compounds when they are most needed—in response to changes in conditions, including acid or basic pH, that cause corrosion or occur at the early stages of corrosion. The materials comprise particles that can be dispersed in paints and coatings for metals. The particles in some cases include ionic water-soluble anti-corrosion agents complexed to oppositely charged surfactants and entrapped in silica oxide or metal oxide gels.

Abstract: Disclosed is a non-porous molded article for a polishing layer, the non-porous molded article including a thermoplastic polyurethane, wherein the thermoplastic polyurethane has a maximum value of a loss tangent (tan ?) in a range of ?70 to ?50° C. of 4.00×10?2 or less. Preferably, the thermoplastic polyurethane is obtained by polymerization of a polymer diol having a number average molecular weight of 650 to 1400, an organic diisocyanate, and a chain extender, and a content ratio of nitrogen derived from an isocyanate group of the organic diisocyanate is 5.7 to 6.5 mass %.

Abstract: An abrasive article includes a substrate having an elongated body, a plurality of discrete tacking regions defining a discontinuous distribution of features overlying the substrate, where at least one discrete tacking region of the plurality of discrete tacking regions includes a metal material having a melting temperature not greater than 450° C., a plurality of discrete formations overlying the substrate and spaced apart from the plurality of discrete tacking regions, and a bonding layer overlying the substrate, plurality of discrete tacking regions, and plurality of discrete formations.

Abstract: A method for producing a coated abrasive includes producing or providing an intermediate abrasive product that comprises a substrate, a plurality of abrasive grains that are bonded to the substrate, and at least one layer of an uncured size coat that at least partially covers the abrasive grains with the uppermost size coat being uncured. The method further includes applying at least one grinding additive to the uppermost, uncured size coat with the grinding additive applied to the size coat in dry form. The method also includes curing the uppermost size coat. A coated abrasive is produced by the method and the coated abrasive is used to process a surface.

Abstract: A method for dry production of a sliding layer on a flexible backing, in particular a backing that includes a textile or an abrasive backing, includes at least the following. A binder, or more particularly an adhesive such as a hot-applied adhesive or a hotmelt, is applied to a flexible backing. The binder is applied in dry form, such as via scattering, and is joined to the backing via exposure to heat to form a sliding layer on the backing and to hold the sliding layer at least one of on and in the backing. A lubricant, or more particularly a lubricant that includes graphite or PTFE, is applied to at least one of the backing and the binder.

Abstract: A manufacturing method of a polishing layer is provided. First, a mold for which the mold cavity has a contour pattern is provided, and the cross section of the contour pattern along a direction includes a plurality of recessions and at least one concavity portion, wherein the at least one concavity portion is disposed on the bottom of at least one of the recessions. A polymer material is disposed in the mold cavity. The polymer material is cured to form a semifinished product, wherein the cross section of the semifinished product along the direction includes a plurality of polishing portions corresponding to the recessions and at least one protruding portion corresponding to the at least one concavity portion. A flattening process is performed on the semifinished product to remove the at least one protruding portion.

Abstract: A method of forming a shaped abrasive particle includes forming a first mixture and a second mixture in a single forming process into an integral precursor shaped abrasive particle, wherein the first mixture has a different composition than a composition of the second mixture.

Abstract: An abrasive article having a plurality of apertures arranged in a non-uniform distribution pattern, wherein the pattern is spiral or phyllotactic, and in particular those patterns described by the Vogel equation. Also, provided is a back-up pad having a spiral or phyllotactic patterns of air flow paths, such as in the form of open channels. The back-up pad can be specifically adapted to correspond with an abrasive article having a non-uniform distribution pattern. Alternatively, the back-up pad can be used in conjunction with conventional perforated coated abrasives. The abrasive articles having a non-uniform distribution pattern of apertures and the back-up pads can be used together as an abrasive system.

Abstract: A polishing pad is provided. The polishing pad includes a polishing layer, which includes a central region, a peripheral region, and a main polishing region located between the central region and the peripheral region. At least one annular groove is located in the main polishing region of the polishing layer. A peripheral groove is located in the peripheral region, and the peripheral groove includes grid-shaped grooves. At least one radial extending groove is located in the main polishing region of the polishing layer, and the at least one radial extending groove is connected with the at least one annular groove. A polishing system including the polishing pad and a polishing method using the polishing pad are provided.

Abstract: The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.

Abstract: A sheet of sandpaper includes a backing layer having opposed first and second major sides, an adhesive make coat on the second major side, abrasive particles at least partially embedded in the make coat, thereby defining an abrasive surface, and an exposed laminated non-slip layer on the first major side. Methods of making and using such sandpaper are also provided.

Abstract: Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described.

Abstract: A flexible abrasive (10) with a preset shape corresponding to the shape of the operating head of a machine tool such as a sanding machine and comprising a first support (16) made from a woven or non-woven material where a lower surface can be fixed to a backing plate or a pad of the operating head. The abrasive surface is made from at least two strips (20-23) applied side by side and parallel to each other and where the second support (11) of each strip (20-23) is separately fixed on the first support (16), and where the abrasive surface (18) is shaped so that it can be applied to the backing plate or pad of the operating head.

Abstract: An abrasive article includes a substrate comprising an elongated body, a first type of abrasive particle overlying the substrate, a bonding layer overlying the first type of abrasive particle, and a lubricious material overlying or integrated within the bonding layer.

Abstract: A sheet-shaped object which is thin and, despite this, has a surface that is dense and is soft to the touch and which has practicable strength and a process for producing the sheet-shaped object are disclosed. This sheet-shaped object comprises ultrafine fibers having an average single-fiber diameter of 0.1-7 ?m and a polymeric elastomer comprising a polyurethane as a major component, wherein when a layer extending from one surface to a depth of 50% of the thickness is referred to as layer (A) and a layer extending from the other surface to a depth of 50% of the thickness is referred to as layer (B), then the ratio of the density of fibers (A?) in the layer (A) to the density of fibers (B?) in the layer (B) satisfies the following expression (a) and the ratio of the density of the polymeric elastomer comprising a polyurethane as a major component (A?) in the layer (A) to the density thereof (B?) in the layer (B) satisfies the following expression (b). The sheet-shaped object as a whole has a density of 0.2-0.