Abstract: A magnetorheological fluid delivery system includes a mixing and tempering vessel. Fluid is admitted to the vessel via a plurality of tangential ports, creating a mixing of the fluid in the vessel and promoting homogeneity. Fluid may be reconstituted in the vessel by metered addition of carrier fluid. A fixed-speed centrifugal pump disposed in the vessel pressurizes the system. Fluid is pumped through a magnetic-induction flowmeter and a magnetic flow control valve having solenoid windings whereby MR fluid is magnetically stiffened to restrict flow. A closed-loop feedback control system connects the output of the flowmeter to performance of the valve. A nozzle having a slot-shaped bore dispenses MR fluid for re-use in the work zone.

Abstract: Methods for dispensing slurry in a linear chemical mechanical planarization (CMP) system are provided. One method involves the use of a pulsing flow of slurry instead of a continuous flow of slurry. Another method involves spraying a mist of slurry onto the polishing pad. Yet another method involves controlling the gap between the nozzles from which the slurry is dispensed and the top surface of the polishing pad. Each of these methods reduces the amount of slurry used during a CMP operation.

Abstract: There is provided an apparatus for polishing a substrate, including (a) a polishing pad formed with a plurality of through-holes through which polishing material is supplied to a surface of the polishing pad, (b) a level block on which the polishing pad is mounted, and (c) a rotatable carrier for supporting a substrate thereon, the carrier being positioned in facing relation with the level block, the level block being rotatable around a rotation axis thereof with the rotation axis being moved along an arcuate path, and causing the polishing pad to make contact with the substrate for polishing the substrate, the polishing pad having a first ring-shaped region concentric thereto where no through-holes are formed. For instance, the first ring-shaped region has a width greater than 10%, but smaller than 95% of a radius of the polishing pad. The apparatus enhances uniformity in polishing a substrate.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: An abrading plate has a self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on the an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10-40% by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions and to obtain a flat surface.

Abstract: A planarizing slurry for mechanical and/or chemical-mechanical polishing of microfeature workpieces. In one embodiment, the planarizing slurry comprises a liquid solution and a plurality of abrasive elements mixed in the liquid solution. The abrasive elements comprise a matrix material having a first hardness and a plurality of abrasive particles at least partially surrounded by the matrix material. The abrasive particles can have a second hardness independent of the first hardness of the matrix material. The second hardness, for example, can be greater than the first hardness. The matrix material can be formed into a core having an exterior surface and an interior. Because the abrasive particles are at least partially surrounded by the matrix material, the abrasive particles are at least partially embedded into the interior of the core.

Abstract: The abrasive machine is capable of feeding a proper amount of slurry and preventing a work piece from sticking on an upper abrasive plate. The abrasive machine comprises: the upper abrasive plate abrading an upper face of the work piece and having a plurality of slurry holes for feeding the slurry to the work piece; a lower abrasive plate abrading a lower face of the work piece; a slurry feeding unit pressurizing and feeding the slurry; a plurality of slurry paths respectively connecting the slurry holes to the slurry feeding unit; a plurality of valve mechanisms respectively provided to the slurry paths so as to control flows of the slurry; and a control section for controlling the valve mechanisms.

Abstract: A polishing fluid delivery apparatus has been provided that in one embodiment includes a support member, a dispense arm, a polishing fluid delivery tube and a variable restricting device. The dispense arm extends from an upper portion of the support member and has an outlet of the delivery tube coupled thereto. The restricting device interfaces with the delivery tube and is adapted to provide a variable restriction to flow passing through the delivery tube. In another embodiment, the restricting device is a pinch valve and the tube in continuous from the outlet to beyond a portion that interfaces with the pinch valve. In yet another embodiment, the position of the delivery arm is controllable.

Abstract: A slurry recycling method comprising the steps of: separating a spent slurry containing silicon dust resulting from slicing of a silicon ingot in the presence of a slurry composed of abrasive grains and a dispersion medium in which the abrasive grains are dispersed, into a dispersion mainly containing the abrasive grains and a dispersion mainly containing the silicon dust; recovering the dispersion medium by centrifuging and/or distilling the dispersion mainly containing the silicon dust; and reproducing a slurry using abrasive grains or the dispersion mainly containing abrasive grains, and the recovered dispersion medium.

Abstract: A method for enhancing uniformity in the polishing profile of a substrate during chemical mechanical polishing. According to a first embodiment, the method is adapted for a rotary-type chemical mechanical polisher and includes dispensing the polishing slurry onto the rotating polishing pad of the CMP apparatus in a polishing area on the polishing pad that contacts the entire surface area of the substrate. This facilitates substantially equal polishing rates and a substantially uniform polishing profile from the center to the edge regions on the surface of the substrate. According to a second embodiment, the method of the present invention is adapted for a linear-type chemical mechanical polisher and includes increasing the number of nozzles that dispense the slurry onto the polishing pad across the diameter or width of the substrate.

Abstract: A polishing slurry supply circuit for a semiconductor wafer fabrication process includes a tangential flow filter. The tangential flow filter is positioned upstream of a wafer polishing apparatus. The tangential flow filter may take the form of a hollow fiber filters or tubular filtration filters. Such filters may be embodied as either ultrafiltration cartridges or microfiltration cartridges. A method of operating a chemical-mechanical polishing system is also disclosed.

Abstract: A DMHC (dual mode hybrid control) system and method which facilitates enhanced control in the delivery of polishing slurry to a CMP (chemical mechanical polishing) apparatus. The DMHC comprises a linear table and a PID (proportional integrated differential) controller operably connected to a slurry pump provided in a slurry flow conduit which delivers the polishing slurry to the CMP apparatus. A bubble trap and a flowmeter provided in the slurry flow conduit downstream of the slurry pump are operably connected to the PID controller, and the CMP apparatus is located downstream of the flowmeter.

Abstract: The present invention relates to methods and apparatus that allow for chemical mechanical polishing using a flexible pad and variable fluid flow for variable polishing.

Abstract: In the grinding process, grinding fluid is supplied toward the grinding point where a workpiece is ground with a grinding wheel. At the same time, a fluid jet is ejected across the air flow above the grinding point in the rotational direction of the grinding wheel. As a result, the air layers on both lateral sides of the grinding wheel are turned not to head for the grinding point above the same, whereby the grinding fluid is reliably led to the grinding point without being obstructed by the air layers following both lateral sides of the grinding wheel.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: This invention relates generally to compositions and methods for removing adherent materials and polishing surfaces. In one embodiment, the method employs an improved media comprising core-shell particles. The media can be applied to microelectronic objects of manufacture.

Abstract: A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.

Abstract: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

Abstract: A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.

Abstract: Chemical mechanical polishing (CMP) equipment for use in planarizing a semiconductor wafer prevents slurry from being deposited on the surfaces of respective components of the equipment. The CMP equipment includes a turntable, a polishing pad mounted to the table so as to rotate with the table, a slurry supply unit for dispensing slurry onto the polishing pad, a polishing head unit for pressing a wafer downward atop the polishing pad, a conditioning unit for scoring the pad to maintain the surface of the polishing pad uniform, and a cleaning fluid supply unit. The cleaning solution supply unit has at least one spray nozzle by which cleaning solution is sprayed onto the polishing pad and respective components of the CMP equipment.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: A semiconductive wafer having a layer of conductive material formed thereon is polished. The semiconductor wafer is rotated against an abrasive polishing pad. A solution is applied to the semiconductor wafer and to the abrasive polishing pad. The solution includes an etchant of the conductive material.

Abstract: A liquid dispense manifold having drip nozzles configured to form controlled droplets is provided for use in chemical-mechanical polisher (CMP) systems. The liquid dispense manifold includes a plurality of drip nozzles that are secured to the side of the liquid dispense manifold. Each of the plurality of drip nozzles has a passage defined between a first end and a second end. A bend is defined within the drip nozzle passage such that droplets are directed downward toward a polishing surface. The nozzles are configured with respect to the manifold to provide an even flow rate of substantially uniform drops onto the polishing surface.

Abstract: The invention provides a polishing composition comprising (i) an abrasive comprising (a) about 5 to about 45 wt. % of first abrasive particles having a Mohs' hardness of about 8 or more, (b) about 1 to about 45 wt. % of second abrasive particles having a three-dimensional structure comprising aggregates of smaller primary particles, and (c) about 10 to about 90 wt. % of third abrasive particles comprising silica, and (ii) a liquid carrier. The invention also provides a method of polishing a substrate, which method comprises the steps of (i) providing the above-described polishing composition, (ii) providing a substrate having a surface, and (iii) abrading at least a portion of the substrate surface with the polishing composition to polish the substrate.

Abstract: A system for dispensing magnetorheological fluid to an MR finishing machine includes a pump for pressurizing the system; a first magnetic valve for regulating MR fluid flow by magnetically varying the structure and apparent viscosity of the fluid through a first flow passage; a similar second magnetic valve magnetically controlling a second flow passage in line with the first valve and flow passage; a pressure sensor disposed between the first and second valves; and an electronic control means. MR fluid flow through the system is controlled to a predetermined flow rate solely by the first valve. When the second valve is deactivated, a reference pressure is determined and saved. When the second valve is activated, a second pressure is determined and saved. From the pressure difference, the solids concentration of the fluid is determined, and a computer algorithm adds a calculated amount of water to the fluid reservoir as needed.

Abstract: A polishing pad conditioner for a chemical-mechanical polishing apparatus includes a conditioning plate having a first recess and a holder having a second recess. The first recess is formed on the upper face of the conditioning plate, and the second recess is formed on the bottom face of the holder. A first filling member having a specific gravity smaller than that of the conditioning plate fills up the first recess, and a second filling member having a specific gravity smaller than that of the holder fills up the second recess. Therefore, the weight of the polishing pad conditioner can be reduced, and the durability and service life of an air bladder that adjusts the height of the polishing pad conditioner can be improved.

Abstract: A polishing apparatus (100) is provided for polishing a substrate (102) that has slurry distributor (125) which improves planarization uniformity. Generally, the apparatus (100) includes: (i) a platen (106) with a polishing surface (110); (ii) a head (116) adapted to hold the substrate (102) against the polishing surface; (iii) a mechanism to rotate the platen (106) during polishing; (iv) a dispenser (124) having nozzles (126, 128) to dispense slurry on the surface (110); and (v) a distributor (125) between the nozzles (126, 128) and the head (116). In one embodiment, the apparatus (100) further includes a wiper (180) between the head (116) and the distributor (125) to remove used slurry and polishing byproducts from the surface (110), thereby reducing agglomerations or deposits that can damage the substrate (102) and improving yield.

Abstract: In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and/or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: A grinding water tank unit which enables reuse of grinding water that has been used for processing an eyeglass lens, includes: a tank in which the grinding water is stored; a filter, disposed in the tank, for filtering the grinding water to be separate from processing debris, the filter having a sealed hollow portion; a first water suction pump; and a first water suction passage which connects the hollow portion to the first pump, and through which the grinding water filtered by the filter is sucked by suction of the first pump.

Abstract: A CMP slurry pumping system and method which uses the slurry pump inlet pressure as input to the pump controller, and the controller adjusts pump speed to account for variations in inlet pressure.

Abstract: A system and method of delivering a liquid to a CMP polishing pad includes supplying the liquid to a nozzle, the nozzle being oriented toward a polishing surface of the CMP polishing pad. The liquid flows at a rate of less than or equal to about 100 cc per minute. A pressurized carrier gas is also supplied to the nozzle. The liquid is substantially evenly sprayed from the nozzle onto the CMP polishing pad.

Abstract: A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems is provided. The method includes applying radiation to an amount of slurry before the slurry is applied to the upper layer of the wafer. In one example, the method also includes providing a polishing pad and a carrier head configured to hold the wafer. The method further includes creating a mechanical polishing interface between the polishing pad, the upper layer of the wafer, and the radiation exposed slurry by bringing the polishing pad and the carrier head into contact.

Abstract: A cleaning method and a corresponding cleaning device offer adequate protection to individuals, devices and installations, for cleaning component parts of installations that carry an electrical high-voltage and which are not disconnected during cleaning. Towards this end, the component parts to be cleaned are subjected to the action of a two-phase particle stream (PS) consisting of a compressed gas (DGA) serving as a carrier medium and of carbon dioxide ice particles (TP) carried therein. Possible superficial accumulations of dirt are removed from the component parts by way of low-temperature embrittlement and by the kinetic energy of the impacting carbon dioxide particles. The carbon dioxide ice particles themselves sublimate without leaving residues.

Abstract: A method of applying a protective gloss coating to a concrete floor includes applying a low viscosity organic coating to the concrete floor, removing the excess organic coating that lies above the peaks of concrete and curing the coating in place.

Abstract: A polishing method with a polishing apparatus includes an electrode constituted as a plurality of electrode elements, a device of driving the electrode, and dielectric abrasive particles disposed between the electrode and a workpiece. Polishing pressure is applied to the particles by a Coulomb force generated when an alternating-current voltage is applied to the electrode.

Abstract: In a first aspect of the invention, a polishing device is provided. The polishing device includes a platen adapted to support a polishing pad and also includes a source of polishing slurry. Also included in the polishing device is a slurry supply line adapted to supply the polishing slurry from the source of polishing slurry to the polishing pad. The polishing device includes a pressure transducer installed along the slurry supply line and adapted to detect a pressure inside the slurry supply line. Numerous other aspects are provided.

Abstract: The present invention is directed, in general, to a method of polishing a surface on substrates, such as semiconductor wafers and, more specifically, to a polishing pad suitable for this purpose. The polishing pad comprises a polishing body that includes a cross-linked polymer material, and may be incorporated into a polishing apparatus. Polishing includes positioning the substrate containing at least one layer against the polishing body and polishing the layer.

Abstract: The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.

Abstract: An apparatus for polishing a wafer includes a polishing station having a platen on which a polishing pad is installed, a polishing head having a membrane that contacts a surface of the wafer, the membrane securing the wafer and pressuring the wafer against the polishing pad, wherein the polishing station includes a transfer stage for loading the wafer on or unloading the wafer from the polishing head, and wherein the transfer stage includes a pedestal on which the wafer is placed and a fluid supply part for supplying a fluid into a boundary region between the wafer and the membrane to reduce a surface tension between the wafer and the membrane. Preferably, the apparatus further includes a stopper for preventing the wafer placed on the pedestal from being lifted up along with the membrane when the wafer is unloaded from the polishing head onto the pedestal.

Abstract: A chemical mechanical polishing apparatus has a substrate holder, a polishing belt, and a backing member positioned on a side of the polishing belt opposite the substrate holder. The polishing belt has a polishing surface to contact at least a portion of the substrate held by the substrate holder. The polishing belt is movable in a first direction in a generally linear path relative to the substrate. The polishing belt has a plurality of grooves formed therein.

Abstract: A chemical-mechanical polishing (CMP) system and method includes pumping polishing slurry from a CMP apparatus through a sampling tube to an endpoint detection apparatus during a polishing operation, and flushing the sampling tube while a polishing operation is not in progress. The flushing of the sampling tube is commenced in accordance with a control signal from the endpoint detection apparatus terminating the polishing operation; the flushing is terminated in accordance with a starting signal to the CMP apparatus. The pump, which pumps a sample of slurry into the endpoint detection apparatus, continuously pumps slurry and/or water. Clogging of the slurry sampling tube is thus eliminated, thereby ensuring robust operation of the CMP apparatus. Contamination of the sampling tube is also avoided, so that the system may reliably provide sensitive endpoint detection and process control, even when a film of low pattern density is polished.

Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.

Abstract: In a mechanochemical polishing apparatus, a SiC wafer is held on a wafer holding table. The surface of the wafer to be polished is pressed against a polishing cloth applied to a polishing platen with a predetermined processing pressure. The wafer holding table and polishing platen are then rotated to perform polishing with chemical liquid dropped on the polishing cloth. The chemical liquid includes chromium (III) oxide as abrasive grains and hydrogen peroxide water (oxidizing agent) for improving polishing efficiency.

Abstract: Planarizing machines and methods for selectively using abrasive slurries on fixed-abrasive planarizing pads in mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies. In one embodiment of a method in accordance with the invention, a microelectronic substrate is planarized by positioning a fixed-abrasive planarizing pad on a table of a planarizing machine, covering at least a portion of a planarizing surface on the pad with a first abrasive planarizing solution during a first stage of a planarizing cycle, and then adjusting a concentration of the abrasive particles on the planarizing surface at a second stage of the planarizing cycle after the first stage. The concentration of the second abrasive particles can be adjusted during the second stage of the planarizing cycle by coating the planarizing surface with a non-abrasive second planarizing solution without abrasive particles during the second stage.

Abstract: When a work W is cut by moving a wire in an axial direction thereof while the wire is pressed onto the work and an abrasive liquid which is made by dispersing abrasive grains in a dispersion medium is interposed between the work and the wire, a flow of the wire is formed, and the wire is pressed onto the work while moving under the liquid level of the abrasive liquid whose flow is formed. The work is cut in the abrasive liquid so that a sufficient amount of the abrasive grains can be supplied between the work and the wire for a long time.

Abstract: In polishing particles each having a core-shell structure, a polishing rate can be controlled by adjusting a thickness and/or density of a shell portion. The polishing particles have the core-shell structure with an average diameter in the range from 5 to 300 nm, and the shell portion of the polishing particles includes silica with a thickness in the range from 1 to 50 nm. A density of the shell portion is in the from 1.6 to 2.2 g/cc, while the Na content of the shell portion is less than 10 ppm.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing head that is composed of a carrier and a membrane, and is positioned on a polishing pad of a supporting part. The polishing head has a supporter installed at an internal center of the carrier, a chucking ring positioned between the carrier and the supporter, and means for moving the chucking ring up and down in a vertical direction. The supporter forms a sealed space together with the membrane, and the chucking ring chucks the wafer in vacuum.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: Apparatus and method for producing and metering dry ice pellets and particles selectively from the same apparatus with out modification, by appropriate reversal of a production wheel and accompanying selection of dry ice in the form of block or of pellets for a supply to the production wheel.