Abstract: A polishing fluid delivery apparatus has been provided that in one embodiment includes a support member, a dispense arm, a polishing fluid delivery tube and a variable restricting device. The dispense arm extends from an upper portion of the support member and has an outlet of the delivery tube coupled thereto. The restricting device interfaces with the delivery tube and is adapted to provide a variable restriction to flow passing through the delivery tube. In another embodiment, the restricting device is a pinch valve and the tube in continuous from the outlet to beyond a portion that interfaces with the pinch valve. In yet another embodiment, the position of the delivery arm is controllable.

Abstract: An apparatus for use in a chemical mechanical planarization system is provided. The apparatus includes a fluid displacing device and a fluid delivery device. The fluid displacing device is capable of being positioned at a proximate location over a polishing pad, the fluid displacing device configured to displace at least part of a first fluid from a region of the polishing pad. The fluid delivery device is capable of replacing the displaced first fluid with a second fluid at the region of the polishing pad, the second fluid being different than the first fluid. A method of controlling properties of a film present over a polishing pad surface is also provided.

Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

Abstract: A process for machining a wafer-like workpiece between two plates, in which material is abraded from the workpiece under the influence of an auxiliary substance supplied and of a pressure acting on the workpiece. In this process, the pressure on the workpiece is significantly reduced and then increased again at least once during the machining of the workpiece, and the supply of the auxiliary substance is reduced as the pressure is increased.

Abstract: A polishing apparatus and a polishing method which can reduce the amount of consumption of the polishing agent and scratches caused on the object to be polished due to an increase of the particle size in the polishing agent. The polishing apparatus has a polishing head which is provided with a polishing agent receiving unit, a holding means for holding an object to be polished in a holding recess, a contact portion which is positioned at the periphery of the holding recess, a feed port for feeding the polishing agent from the polishing agent receiving portion into the closed space, a vibration imparting means for imparting vibration to the polishing agent, and a valve means provided with a valve for opening and closing the feed port.

Abstract: Vending apparatus for optical disk restoration has a housing for receiving the disk form a customer; a disk inspection device to determine whether the disk is correctly positioned for polishing and providing a signal indicative of disk position, a disk perforation detecting device providing a signal indicative of any perforation in a reflective layer of the disk; and a device for ejecting a perforated disk from the housing. A user interface requests and receives payment from a customer in response to a signal by the detecting device that the reflective layer is imperforate and provides a signal indicating receipt of correct payment. Polishing wheels polish, with slurry, an exposed light receiving surface of a data carrying protective layer of the disk to ameliorate scratches in response to a signal from the user interface of correct payment and a device ejects a polished disk from the housing to a customer.

Abstract: A method for feeding slurry, and a slurry feeder capable of feeding slurry to a chemical mechanical polishing apparatus, are disclosed. Slurry is fed from a slurry supply tank, that stores slurry at a given concentration, to chemical mechanical polishing apparatuses via slurry feed pumps. Operations of the slurry feed pumps are suspended during a period of time other than during a time of feeding slurry to the chemical mechanical polishing apparatuses. A slurry feeder for feeding a slurry to a polishing apparatus includes a pump for feeding slurry at a flow rate Q from a slurry supply tank to the polishing apparatus. When a given sedimentation velocity of slurry is indicated by V, a horizontal sectional area of the slurry supply tank is set to become smaller than Q/V.

Abstract: Machines with solution dispensers and methods of using such machines for chemical-mechanical planarization and/or electrochemical-mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that manipulates the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to discharge a planarizing solution onto a plurality of separate locations across the pad.

Abstract: A lens-holding shaft 41 displaces a lens 1 towards a main rotating tool 50 for processing the peripheral portion of the lens 1. A long hole 115 penetrating a waterproof case 101 is formed in the waterproof case 101 along the locus of displacement of the lens-holding shaft 41 and the lens-holding shaft is inserted through the long hole 115. At the outside of the waterproof case 101 along the long hole 115, a flexible water-resistant sliding shutter 130 is disposed in a manner such that the sliding shutter 130 can be freely displaced. The sliding shutter 130 is connected with the lens-holding shaft 41. A guide member 150 containing the sliding shutter 130 is bent at a position before the main shaft 51.

Abstract: A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a composition to the rigid disk comprising at least one hydroxylamine additive and colloidal silica to give polished rigid disk.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: A method for preparing a semiconductor die for analysis comprises providing a semiconductor die having a connector on one side and an opposite, backside surface to be analyzed, providing a polishing pad for polishing the backside surface of a semiconductor die, providing a rotatable spindle for securing the polishing pad, and providing a constant force actuator on the spindle, the constant force actuator being adapted to provide constant force between the polishing pad and the backside surface of the die. The method then includes contacting the backside die surface with the polishing pad, rotating the spindle and polishing pad, and polishing the backside surface of the die while maintaining the substantially constant force of the polishing pad on the die backside surface with the constant force actuator.

Abstract: The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations.

Abstract: An apparatus and method for drawing a sample of a chemical-mechanical polishing slurry for analysis of at least one property, e.g., particle size distribution, is described.

Abstract: A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a basin and a polishing head. A carrier is disposed in the basin and has a substrate supporting surface. A retaining ring is disposed on the carrier and at least partially circumscribes the substrate supporting surface. The polishing head is supported above the basin and includes a conductive polishing pad. Embodiments may further include a vent to allow gas to escape through the polishing head. Embodiments may further include an electrolyte supply that flows electrolyte into the polishing head and out through a permeable electrode and the conductive pad to the substrate. Embodiments may also be configured with a polishing head diameter smaller than the substrate supported by the carrier.

Abstract: A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.

Abstract: Polishing slurry consumption in the wafer polishing process can be reduced by using a polishing pad structure that directs portions of the slurry flow towards the center of the polishing pad.

Abstract: The invention relates to an arrangement of a chemical-mechanical polishing tool for chemical-mechanical polishing a surface on a wafer, comprising a polishing pad (4), a drive unit (9), pressing means (6), a wafer holder (5), first dispensing means (7) and second dispensing means (8); the wafer holder for holding a wafer (W) being arranged at a holder location (L0); the pressing means (6) being arranged to press the wafer holder (5) to the polishing pad (4); the first dispensing means (7) for dispensing a first fluid on the polishing pad (4) being arranged at a first dispensing means location (L1); the second dispensing means (8) for dispensing a second fluid on the polishing pad (4) being arranged at a second dispensing means location (L2); the polishing pad (4) comprising a polishing surface for polishing the wafer (W), and the polishing pad (4) further being connected to the drive unit (9) for moving the polishing surface in a first direction (&ohgr;1) relative to the holder location (L0);

Abstract: A CMP pad conditioning unit having a new and improved drive transmission for transmitting rotation from a drive motor to a conditioning disk on the pad conditioning unit. The drive transmission includes a rotatable transmission shaft that is drivingly engaged by the drive motor and drivingly engages the conditioning disk. In operation, rotation is transmitted from the drive motor to the conditioning disk through the transmission shaft. The drive transmission is characterized by reliability, longevity and enhanced efficiency in the conditioning of substrate polishing pads.

Abstract: An apparatus for manufacturing a semiconductor device by polishing the surface of a semiconductor substrate is provided, which comprises a polishing pad for polishing the substrate surface, a polishing slurry feed apparatus for feeding a polishing slurry to the substrate surface, and a measuring instrument including an electrode (A) and an electrode (B) immersed in a polishing slurry, wherein a characteristic variation of the polishing slurry is detected from a variation in value of an electric current passing between the electrode (A) and the electrode (B) or from a variation in potential difference between the electrodes.

Abstract: A method of separating, recovering and reusing components of an exhausted slurry used in slicing silicon wafers from a silicon ingot. In the method, the solid particles and lubricating fluid of the exhausted slurry are separated without decreasing the viscosity of the exhausted slurry. The separated lubricating fluid may be collected and reused in the preparation of a fresh slurry. Additionally, the silicon particulate and metal slicing wire particulate are dissolved and separated from the abrasive grains. The abrasive grains are separated into spent abrasive grains and unspent abrasive grains. The separated unspent abrasive grains are suitable for reuse in the preparation of a fresh slurry.

Abstract: The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank.

Abstract: In planarization process with CMP method for a work surface having very small protrusions and depressions thereon at a semiconductor process, a polishing method is provided which achieves high flatness by selectively polishing and removing the protrusions. Relating to the planarization process such as CMP processing or an aspheric lens polishing process, the polishing method is performed by forming aggregation trace of particles on the work surface by irradiating laser light. More specifically, a region where the laser light to be irradiated is the depressions adjacent to the protrusions and forms the aggregation trace of particles within the depression, thereby controlling the amount of removal material at a fine region to allow selective polishing of the protrusions.

Abstract: A centrifugal barrel finishing apparatus centrifugally polishing, grinding or otherwise finishing workpieces includes a revolving member mounted on a first rotatable shaft so as to be rotated with the first shaft, a barrel mounted to be rotated about a second shaft, the barrel having both axial ends, a stopper mounted on the second shaft so as to be abutted against one axial end side of the barrel, and a fluid pressure cylinder including a piston and mounted on the second shaft so that the piston pushes the other axial end side of the barrel so that the barrel is held between the stopper and the cylinder.

Abstract: A method for fabricating a semiconductor device, which includes the process step of polishing a substrate using CMP. To suppress the generation of scars and scratches on a wafer surface, in the polishing process, a tube-type slurry supply pump 15 is used to supply slurry. Then, in the tube-type slurry supply pump 15, a vinyl chloride type tube is used as a tube 12 for supplying a slurry.

Abstract: Apparatus and methods are disclosed for controlling slurry flow in a chemical mechanical polishing apparatus for planarizing an object to be polished by supplying slurry on a grinding pad through a slurry injection nozzle. A disclosed apparatus includes a slurry supply unit; a photo image sensor mounted to one side of a by-pass; a slurry measuring unit for analyzing an image captured by the photo image sensor to measure the sizes of particles and the density of the slurry; and a slurry flow control unit. The disclosed apparatus and methods perform real-time flow control of slurry fed to the injection nozzle through the slurry supply line.

Abstract: A method is suitable for cleaning substrates, after polishing, that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The method includes polishing a substrate using an abrasive liquid containing abrasive particles, and cleaning a polished surface of the substrate by supplying a cleaning liquid having substantially the same pH as the abrasive liquid or similar pH to the abrasive liquid so that a pH of the abrasive liquid attached to the polished surface of the substrate is not rapidly changed.

Abstract: In the cutting solution supplying and controlling apparatus for a dicing machine, a flow rate adjusting device is provided in addition to a regulator as the pressure adjusting device. The flow rate adjusting device has a flow rate controller, which controls a proportional solenoid valve according to a signal applied from a flow rate sensor as a feedback signal. Thus, even if the pressure of the water supplied from the water supply equipment of the factory changes, the flow rates of the cutting solution and the coolant are maintained. Moreover, the flow rates can be easily adjusted according to the type of work to be processed.

Abstract: An improved method for producing a thin layer having highly uniform thickness, which layer may be pre-coated on an undulating surface of a substrate element. A working layer of the material is formed having a thickness greater than the final thickness desired. An areal (XY) determination of working layer thickness is made by ellipsometry, laser interferometry, or x-ray diffraction, or other known means. A map of thicknesses to be removed from the free surface of the working layer is entered into the control system of a magnetorheological finishing apparatus. The working layer is mounted on a workpiece holder of the apparatus and correctly indexed to the machine. The machine then removes material by magnetorheological finishing as instructed by the control system to leave a residual layer having a very high degree of thickness uniformity at a nominal average thickness and a very high surface integrity.

Abstract: A nitride CMP slurry having selectivity to nitride over oxide. The slurry increases the polishing speed of a nitride film by varying the pH of the slurry, and polishes the nitride film faster than an oxide film by decreasing the polishing speed of the oxide film. As a result, the slurry provides a CMP process for manufacturing a high density and highly integrated semiconductor device and a structural development of new concept device.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: An in-line oscillating device is essentially composed of an oscillating tank, an oscillating pipe, and an oscillating generator. The oscillating pipe is set in the oscillating tank and connects with a slurry pipe. The oscillating generator for generating ultrasonic waves is mounted on the oscillating tank. Furthermore, the oscillating tank is filled with a medium to transmit the ultrasonic waves generated by the oscillating generator to the oscillating pipe. The in-line oscillating device is suitable to be mounted on any location of the slurry pipe where oscillation is needed.

Abstract: Methods and apparatus for chemical mechanical planarization of an article such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning solvent step and apparatus may also be employed.

Abstract: According to one embodiment, a method of planarizing of a surface of a semiconductor substrate is provided. A copper layer is inlaid in a dielectric layer of the substrate. The semiconductor substrate is disposed opposite to a polishing pad and relative movement provided between the pad and the substrate. An electrolytic slurry containing abrasive particles is flowed over the substrate or the pad. A voltage is applied between the polishing pad and the substrate to perform electropolishing of the substrate. The rate of chemical mechanical polishing is controlled by the down force applied to a polishing head urging the substrate against the polishing pad.

Abstract: The invention shows a workpiece template and a number of additional elements for forming wafers of varying thicknesses=. The template is formed of a main disk including a plurality of cavities extending through a main plate with either a frictionless material or a backing plate forming the cavity base. The template shows additional elements to aid in the lapping/polishing abrasive fluid movement in the form of spiraling channels moving across the top surface of the template. The channels can extend through the template cavity walls. Also shown are the improvement previously stated applied to a template having notched gear-like teeth for another type of lapping/polishing machine.

Abstract: An improved method for lapping the opposed major surfaces of a wafer is provided. In this regard, a multi-step lapping process is provided in which lapping continues while transitioning from a first slurry having larger abrasive particles to a second slurry having smaller abrasive particles so as to reduce the overall length of the lapping process. In addition, the multi-step lapping process is optimized so as to remove no more than about 90 microns in total thickness from the opposed major surfaces of the wafer. By completing the lapping with slurry having smaller abrasive particles, subsequent etching of the wafers produces shallower surface pitting. As such, the wafers generally require less polishing than required by conventional processes.

Abstract: A ventilated platen/polishing pad assembly for chemical mechanical polishing copper conductors on a semiconductor wafer is disclosed. The ventilated platen is constructed by a platen having a multiplicity of apertures through a thickness of the platen, and a polishing pad that has a multiplicity of apertures for fluid communication with the multiplicity of apertures in the platen such that a gas can flow through the ventilated platen and the ventilated polishing pad to mix with a polishing slurry solution dispensed on top of the polishing pad. When an oxidizing gas is mixed with the slurry solution, the mass transfer process during the chemical mechanical polishing can be improved and thus improving the polishing uniformity of the copper surface.

Abstract: Machines with solution dispensers and methods of using such machines for chemical-mechanical planarization and/or electrochemical-mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that manipulates the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to discharge a planarizing solution onto a plurality of separate locations across the pad.

Abstract: An abrasive liquid feed apparatus comprises a supply tank for storing an abrasive liquid having a predetermined concentration, an abrasive liquid pipe for transferring the abrasive liquid from the tank to a polishing means and an additive feed means which feeds an additive having a predetermined concentration to the tank. It further comprises an additive concentration measurement means which measures a concentration of the additive in the abrasive liquid in the supply tank, a measurement means which measures an amount of the abrasive liquid in the tank and a control which calculates an amount of the additive to be supplemented to the tank, based on the concentration of the additive measured by the additive concentration measurement means and the amount of the abrasive liquid measured by the metering means. To maintain the concentration of aqueous hydrogen peroxide in the abrasive liquid.

Abstract: An apparatus and a process for recovering an abrasive from a waste fluid of a chemical mechanical polishing (CMP) process. The apparatus comprises a pre-filter into which a waste fluid of a CMP process is introduced, a membrane separation apparatus into which filtered waste fluid obtained from the pre-filter is introduced, a washing unit wherein a concentrated slurry obtained from the membrane separation apparatus is washed with water and a post-filter wherein the concentrated slurry obtained from the washing unit is filtered. Particles of the abrasive are thereby efficiently recovered from a waste fluid discharged from a CMP process in semiconductor manufacturing factories and are reused.

Abstract: A slurry homogenizer. A frame having an outlet is disposed on a driving means having a rotating shaft. A waterproof plate having a first opening is disposed in the frame and on the driving means. Part of the shaft penetrates the first opening. A filter is disposed in the frame and on the plate. A first grinding pad has a second opening and is fitted on the shaft through the second opening. The first grinding pad is disposed in the frame and above the plate. A knob is fitted on the top of the shaft. The knob fixes the first grinding pad on the shaft. A cover having a pipe is disposed on the frame. A second grinding pad having a third opening is fitted on the pipe and disposed in the frame. The second grinding pad and the first grinding pad are separated by a fixed distance.

Abstract: The present invention describes an apparatus that includes a polish pad, the polish pad including a first through-opening; a vertical distribution layer located below the polish pad, the vertical distribution layer connected to the through-opening; a lateral distribution layer located below the vertical distribution layer, the lateral distribution layer connected to the vertical distribution layer; and a slurry dispense located over a front-side of the polish pad, the slurry dispense to provide a slurry to be transported through the polish pad to the lateral distribution layer.

Abstract: Apparatus for producing a polishing solution composed of pure water and abrasive grains, the apparatus including a preparation tank to prepare a polishing solution containing abrasive grains at a predetermined concentration, by mixing an abrasive grain-containing slurry and pure water, and a circulation device for circulating the thus prepared polishing solution to keep the solution in a suspended state. The circulation device includes a circulation conduit and a flow-controllable bypass conduit fluidly associated with the circulation conduit providing a constant flow rate and having a light-extinction type particle detector for monitoring the polishing solution so as to detect large abrasive grains having a particle size not less than a predetermined value and measure the number of the large abrasive grains.

Abstract: An eyeglass lens processing apparatus for processing an eyeglass lens includes: a processing chamber inside which a lens grinding tool is disposed; a tank which stores grinding water; a drain hose connecting the processing chamber with the tank; a filter for eliminating bubbles attached to an outlet of the drain hose, which includes a large number of pores having a size such that permits passing of processing debris stemming from rough processing and inhibits passing of bubbles larger than the processing debris.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: The present invention describes an apparatus that includes a polish pad, the polish pad including a first through-opening; a vertical distribution layer located below the polish pad, the vertical distribution layer connected to the through-opening; a lateral distribution layer located below the vertical distribution layer, the lateral distribution layer connected to the vertical distribution layer; and a slurry dispense located over a front-side of the polish pad, the slurry dispense to provide a slurry to be transported through the polish pad to the lateral distribution layer. The present invention further describes a method including dispensing a slurry at a front-side of a polish pad; flowing the slurry to a location below the polish pad; flowing the slurry upwards and outwards, towards edges of the polish pad; and distributing the slurry to an upper surface of the polish pad.

Abstract: A polishing material for chemical mechanical polishing has a mesh of fibers and a binder material holding the fibers in the mesh. The binder material coalesced among the fibers to leave pores in the interstices between the fibers of the mesh. The fibers and binder material provide the polishing material with a brittle texture. The fibers can be cellulose, and the binder material can be a phenolic resin.

Abstract: A chemical mechanical polishing apparatus includes a polishing pad on which a wafer requiring planarization is placed, a conditioning disc having an abrasive surface for conditioning the polishing pad, a tank containing de-ionized water in which the conditioning disc soaks while standing by, and a cleaner for cleaning the conditioning disc. The conditioning disc cleaner is disposed in the tank of de-ionized water to remove polishing impurities from an abrasive surface of the conditioning disc. The cleaner may include a brush having bristles against which the abrasive surface of the conditioning disc is placed when it is lowered into the tank. In operation, after the wafer is polished, an abrasive surface of the conditioning disc is run over the upper surface of the polishing pad to condition the surface of the polishing pad. Then the conditioning disc is moved off of the upper surface of the polishing pad and to a stand-by position in which the abrasive surface of the disc is submerged in a liquid.

Abstract: Provided is a chemical mechanical polishing pad which as capable of draining used slurry from the polishing pad surface through the pad. Chemical mechanical polishing pads according to preferred embodiments of the present invention have slurry drain holes to drain slurry from the pad surface. In various preferred embodiments, the drain holes are combined with drain grooves in the pad surface and/or the pad/pad backing or pad/platen interface to provide a path for used slurry to exit the pad. The invention also provides a method of conducting CMP using through-pad slurry drainage.

Abstract: A method for planarizing the dielectric layer of a flash memory device, wherein the method is applied on substrate of a flash memory device having a plurality of gate structures formed thereon and a protective layer is formed on the gate structures. A dielectric layer is formed on the substrate, filling the space between the gate structures and covering the protective layer. Using the protective layer as a polishing endpoint layer, a fixed base and a polishing slurry that does not contain metal ions are used to chemical mechanically polish and to planarize the dielectric layer. The fixed base includes a base and evenly distributed polishing abrasives fixed onto the base.