Abstract: An automatic razor blade sharpener simultaneously sharpens multiple edges of a spring-loaded disposable razor blade cartridge by gently contacting the blade edges with a moving rubber or polymeric compliant belt that is motor driven. The disposable razor blade handle is set in a cradle aperture, which is spring loaded against the moving belt. A timer terminates the blade sharpening operation, indicated by a green LED. A liquid is dispersed on the moving belt forming a thin liquid layer on the belt surface, illuminated by transversely located light illumination and the reflected light is received by a transversely located sensor. When the blade contacts the thin liquid layer, deep grooves in the blade cutting edge reduce this reflection indicating that the blade is too worn to be sharpened and a red LED light is indicated. Absence of reflection indicates that the thin liquid film has evaporated or spilled out.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.

Abstract: An optical probe (and method) for measuring a surface in an environment containing a first substance, includes a light source for transmitting a light onto an area of the surface to obtain a measurement, a source of the first substance including one of a fluid and a gas for displacing a second substance from an area of the surface receiving the light, and a measuring device for receiving the light being reflected from the surface and for determining a measurement of the surface based upon the reflected light.

Abstract: In one embodiment, a semiconductor substrate (38) is uniformly polished using a polishing pad (16) that has a first polishing region (26), a second polishing region (28), and a third polishing region (30). The semiconductor substrate (38) is aligned to the polishing pad (16), such that the center of the semiconductor substrate (38) overlies the second polishing region (28), and the edge of the semiconductor substrate overlies the first polishing region (26) and the third polishing region (30). During polishing, the semiconductor substrate (38) is not radially oscillated over the surface of the polishing pad, and as a result a more uniform polishing rate is achieved across the semiconductor substrate (38). This allows the semiconductor substrate (38) to be uniformly polished from center to edge, and increases die yield because die located on the semiconductor substrate (38) are not over polished.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: The invention is directed to chemical-mechanical polishing pads comprising a transparent window. In one embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material comprises about 20 wt. % or more of the transparent window. In another embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material is dispersed throughout the organic material and has a dimension of about 5 to 1000 nm, and wherein the transparent window has a total light transmittance of about 30% or more at at least one wavelength in the range of about 200 to 10,000 nm. In yet another embodiment, the transparent window comprises an inorganic/organic hybrid sol-gel material. In an additional embodiment, the transparent window comprises a polymer resin and a clarifying material, wherein the transparent window has a total light transmittance that is substantially higher than a window comprising only the polymeric resin.

Abstract: A porous polishing pad for use chemical/mechanical planarization of semiconductor wafers is provided with a transparent section formed in a section of the porous polishing pad by direct injection of a polymeric material into a modified portion of the pad. The modified section may be either a low density area, or may be created by removing a complete vertical section of the pad. The injected polymer forms an integral window with the pad by flowing into the matrix of the pad at the pad/window interface. No additional reinforcement is required to hold the window in place; however, adhesive and/or another impervious layer may be attached behind the window for additional support. In an alternative embodiment, a separate and distinct window-plug is inserted into a cutout section of the pad, and bonded to the pad by one or more binding film layers on the back, non-working surface of the pad.

Abstract: Conductive elements of a chemical mechanical polishing system may generate undesired eddy currents under the influence of a time-dependent magnetic field used in an eddy current monitoring system. To improve the accuracy of an eddy current monitoring system, elements that may contribute an undesired signal to the sensed eddy current signal may be fabricated from a non-conductive material such as plastic or ceramic. In some implementations, elements may be fabricated from non-magnetic materials.

Abstract: The substrate polishing apparatus for polishing a polishing surface of a substrate comprises a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device. The table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: A sensing apparatus for detecting a processing endpoint of a multi-layer semiconductor wafer includes a light source to emit light against a surface of the semiconductor wafer, a color sensor to sense a reflection color from the surface of the semiconductor wafer in response to the incident light and to generate a sensor signal, and a decision circuit coupled to the color sensor and configured to decide whether the wafer processing endpoint has been reached based at least in part on the sensor signal. In another embodiment, a sensing apparatus is coupled to a movable structure to position the sensing apparatus to sense the surface of the semiconductor wafer.

Abstract: Improperly mounted wafer saw blades can damage wafers cut or diced with the blades. Embodiments of this invention employ sensors to measure a distance to the blade to help indicate if the blade is improperly mounted. In one method of the invention, a the distance to the blade face is measured as the blade is rotated and a variance in this measured distance is determined. If the variance is no greater than a predetermined maximum, the blade may be used to cut the wafer. In one apparatus of the invention, a wafer saw include a blade and a sensor. The sensor is adapted to monitor a distance to a face of the rotating blade. A processor coupled to the sensor may indicate if the distance to the face of the blade as it rotates deviates too far from a baseline position of the blade face.

Abstract: A reliable, inexpensive “back side” thinning process and apparatus therefor, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing are provided. One method includes scanning a specimen with a measurement device during polishing to generate output signals at measurement spots on the specimen. The method may also include determining a characteristic of polishing at the measurement spots from the output signals. In addition, the method may include determining relative or absolute locations of the measurement spots on the specimen. The method may further include generating a two-dimensional map of the characteristic at the relative or absolute locations of the measurement spots on the specimen. In some embodiments, the relative locations of the measurement spots may be determined from a representative scan path of the measurement device and an average spacing between starting points on individual scans.

Abstract: In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.

Abstract: A method of determining the endpoint of a planarizing process is disclosed. An endpoint detection signal is selectively sampled from at least one predetermined location within a planarizing region defined on a planarizing web. Planarization is stopped when the endpoint criterion based on the endpoint detection signal is detected.

Abstract: Polishing pads, planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. The polishing pads, for example, can be web-format pads, and the planarizing machines can be web-format machines. In a typical application, the web-format machines have a pad advancing mechanism and stationary table with a first dimension extending along a pad travel path, a second dimension transverse to the first dimension, and an illumination site from which a laser beam can emanate from the table. The pad advancing mechanism moves the pad along the pad travel path to replace worn portions of the pad with fresh portions. In one embodiment of the invention, a web-format polishing pad includes a planarizing medium and an optical pass-through system having a plurality of view sites through which a light beam can pass through the pad.

Abstract: Polishing pads, planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. The polishing pads, for example, can be web-format pads, and the planarizing machines can be web-format machines. In a typical application, the web-format machines have a pad advancing mechanism and stationary table with a first dimension extending along a pad travel path, a second dimension transverse to the first dimension, and an illumination site from which a laser beam can emanate from the table. The pad advancing mechanism moves the pad along the pad travel path to replace worn portions of the pad with fresh portions. In one embodiment of the invention, a web-format polishing pad includes a planarizing medium and an optical pass-through system having a plurality of view sites through which a light beam can pass through the pad.

Abstract: A pressure control system is used for eliminating individual differences of a plurality of pressure controllers used for controlling pressures of a plurality of pressure-controlled sections. The pressure control system includes a plurality of pressure controllers for supplying a pressurized fluid to a plurality of pressure-controlled sections, a master pressure controller for supplying a pressurized fluid having a reference pressure, a plurality of calibration chambers corresponding to the pressure controllers.

Abstract: The invention improves a polishing process for a wafer retained in a multizone carrier in a chemical mechanical polishing tool. A light signal is communicated to the front surface of the wafer and the reflected light signal is captured by a metrology instrument. The metrology instrument communicates the intensity of the reflected light to a control system. The location or radial position corresponding to the reflected light signal from the front surface of the wafer may be determined by the control system. From the intensity measurements and corresponding locations, the control system is able to determine an approximate topography of the wafer. The control system may alter the pressure within one or more zones within the multizone carrier to improve the polishing process. The control system may also alter the initial pressures within the multizone carrier for future wafers based on the polishing results from the present wafer.

Abstract: A CMP (chemical mechanical polishing) apparatus having a measuring device for measuring a guide ring. A polishing table is provided. A wafer loading/unloading device is located at a first side of the polishing table. A measuring device is located at a second side of the polishing table. A carrier having a first lateral and a second lateral opposite the first lateral, wherein the first lateral faces the polishing table, the wafer loading/unloading device or the measuring device. A guide ring is disposed on the first lateral of the carrier. A transfer device is disposed on the second lateral of the carrier and connected to the carrier, wherein the transfer device is used to move the carrier onto the polishing table, the wafer loading/unloading device or the measuring device. The measuring device is used to automatically and immediately measure the severity of scoring on the guide ring.

Abstract: This is a processing cell of an automatic machining system having a small, lightweight and simple structure, easy to determine or change the number of process, easy in design, and low in apparatus cost. A processing cell (A) has a unit structure comprising a conveying device (10) forming a part of a work conveying route (1), a fine boring machine (5a) or honing machine (5b), (5c) as a single machine tool, and a control unit for linking them mutually and controlling, and these cells are installed, being free to increase or decrease in number, in the machining section of automatic machining system such as automatic honing system.

Abstract: A device for predicting the lapping property of a charged lapping plate uses samples with a known lap surface. The samples are lapped on the plate and a non-invasive sensor is used to determine the lapping rate under a fixed load and rotation speed. The total frictional force of the samples is measured during the lapping to calculate the friction and Preston coefficients of the plate. The samples are held in place while the plate rotates and the sensor measures the distance to the plate. The plate rotates for a specific time so that adequate removal of the pad material has occurred. The lapping rate is determined from a change in the gap distance over a time interval. The lapping rate and friction are then assessed to determine if the plate is lapping worthy.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: A method and system for dicing a semiconductor wafer providing a structure with greatly reduced backside chipping and cracking, as well as increased die strength. Semiconductor chip structures obtained from wafers diced according to this invention are also encompassed.

Abstract: The end portion on the side of the second end surface of the first optical fiber 62 is inserted into the inner race in the central part of the roll-bearing type bearing 36, and is fastened to this inner race. The fastening position of this end surface on the side of the second end surface is adjusted to match a specified position on the axis of rotation 11 in order to emit probe light and allow the incidence of the reflected signal light. The probe light emitted from the second end surface of the second optical fiber 61 passes through the transparent window 23 and is caused to illuminate the polished surface of the substrate 42. The reflected signal light that is reflected from this point again passes through the transparent window 23 in the opposite direction, and is incident on the second end surface of the second optical fiber 61.

Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

Abstract: The system includes a polishing pad, a pad height sensor; a window; and a window raising mechanism. The polishing pad has an aperture with the window vertically moveable therein. The pad height sensor is positioned above the polishing pad and measures the vertical position of the pad before polishing. The window raising mechanism adjusts the vertical position of the window based on information from the pad height sensor. An endpoint measurement sensor can be disposed beneath the window for in-situ measurement of the polishing process.

Abstract: A polishing apparatus comprises a polishing table having a polishing surface, a top ring for holding a substrate and pressing a surface of the substrate against the polishing surface to polish the surface of the substrate, and at least one optical measuring device disposed adjacent to the outer peripheral portion of the polishing table and below the polishing surface of the polishing table for measuring the thickness of a layer formed on the surface of the substrate. The polishing apparatus further comprises at least one notch formed in the peripheral portion of the polishing table. The notch allows light emitted from the optical measuring device to pass therethrough and be incident on the surface of the substrate and allows light reflected from the surface of the substrate to pass therethrough and be incident on the optical measuring device.

Abstract: In a chemical-mechanical polishing apparatus and a method for controlling the same, a table of an initial thickness of a layer to be polished concerning a detected light quantity of an endpoint detecting member is prepared in accordance with a polishing process recipe of the layer to be polished. The polishing process recipe of the layer is inputted, and a light quantity reflected from the layer is detected using the endpoint detecting member by projecting a light onto a semiconductor wafer. A thickness of the layer is calculated before the polishing process from a detection signal as the detected light quantity with reference to the table of the initial thickness of the layer concerning the detected light quantity. A polishing time is calculated from the calculated thickness before the polishing process to a desired thickness. An endpoint is detected by discounting the calculated polishing time while polishing the layer to be polished. Then, the polishing process is stopped when the endpoint is detected.

Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

Abstract: The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical processing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: A grinding apparatus for use with an endoscope for viewing and blending defects on a turbine engine blade is provided. In one preferred embodiment air pulses from an air supply cause a grinding head on the end of a grinding tool to reciprocate at a predetermined speed. The position of the grinding head is fixed via the operator via a trigger on the grinding tool which articulates an outer portion of a support tube of the grinding tool. In another preferred embodiment, fluid is used to reciprocate the grinding head.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: A polishing apparatus is provided for accurately detecting the relative displacement between an upper wheel and a lower wheel and thus for reliably polishing workpieces to a desired thickness. The polishing apparatus includes an upper wheel for pressing at least one workpiece, a lower wheel for supporting the workpiece, non-contact-type displacement-detection device for detecting the relative displacement between the upper wheel and the lower wheel, and a reference table for providing a displacement-detection reference position. The non-contact-type displacement-detection device is joined to the upper wheel so as to move therewith. The reference table is disposed at a position opposing the displacement-detection device and also is integrally connected to the lower wheel.

Abstract: A method and apparatus for controlling the thickness of a semiconductor wafer during a backside grinding process are disclosed. The present invention uses optical measurement of the wafer thickness during a backside grinding process to determine the endpoint of the grinding process. Preferred methods entail measuring light transmitted through or reflected by a semiconductor wafer as a function of angle of incidence or of wavelength. This information is then used, through the use of curve fitting techniques or formulas, to determine the thickness of the semiconductor wafer. Furthermore, the present invention may be used to determine if wedging of the semiconductor occurs and, if wedging does occur, to provide leveling information to the thinning apparatus such that a grinding surface can be adjusted to reduce or eliminate wedging.

Abstract: A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.

Abstract: Systems and methods for characterizing a polishing process are provided. One method includes scanning a specimen with two or more measurement devices during polishing. In one embodiment, the two or more measurement devices may include a reflectometer and a capacitance probe. In another embodiment, the two or more measurement devices may include an optical device and an eddy current device. An additional embodiment relates to a measurement device for scanning a specimen during polishing. The device includes a light source and a scanning assembly. The scanning assembly is configured to scan light from the light source across the specimen during polishing. Another measurement device includes a laser light source coupled to a first fiber optic bundle and a detector coupled to a second fiber optic bundle. An additional method includes scanning a specimen with different measurement devices during different steps of a polishing process.

Abstract: A polishing pad having an optical assembly that does not cause excess wear on a wafer workpiece. The optical assembly is disposed within the pad such that it may move in response to forces applied to the optical assembly. A damping pad may be disposed on the optical assembly to reduce vibrations and further increase the sensitivity of optical measurements.

Abstract: A method of positioning a grooved grinding wheel relative to a disc-like circular workpiece for edge grinding the workpiece using the groove in the wheel includes the steps of mounting the workpiece for rotation about a first axis, mounting the grinding wheel for rotation about a second parallel axis, effecting relative movement between the workpiece and the wheel to engage the rim of the wheel within the groove and performing a preliminary grind. The position of the wheel is axially adjusted in accordance with the measurements made on the profile of the rim produced by the preliminary grind, and the rim is ground again with a second preliminary grind with the grinding wheel located at the axially shifted position. The steps of grinding and measuring the periphery of the workpiece are repeated until the rim profile possesses the desired accuracy. The final position of the grooved grinding wheel is then utilized for grinding future wafers.

Abstract: A polishing pad assembly for use in a chemical-mechanical polishing apparatus comprises a polishing pad having at least a first aperture therethrough and a platen for supporting the polishing pad having a second aperture therethrough at least a portion of which is larger than the first aperture. A substantially transparent plug includes at least a first section having a first dimension for positioning substantially within the first aperture and at least a second section having a second dimension larger than the first dimension for positioning substantially within the second aperture. The optical plug is made of a polymeric material which may be press-fit through the platen into polishing pad.

Abstract: A chemical mechanical polishing apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween. An eddy current monitoring system is positioned to generate an alternating magnetic field in proximity to the substrate, an optical monitoring system generates a light beam and detects reflections of the light beam from the substrate, and a controller receives signals from the eddy current monitoring system and the optical monitoring system.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: A porous polishing pad for use chemical/mechanical planarization of semiconductor wafers is provided with a transparent section formed in a section of the porous polishing pad by direct injection of a polymeric material into a modified portion of the pad. The modified section may be either a low density area, or may be created by removing a complete vertical section of the pad. The injected polymer forms an integral window with the pad by flowing into the matrix of the pad at the pad/window interface. No additional reinforcement is required to hold the window in place; however, adhesive and/or another impervious layer may be attached behind the window for additional support. In an alternative embodiment, a separate and distinct window-plug is inserted into a cutout section of the pad, and bonded to the pad by one or more binding film layers on the back, non-working surface of the pad.

Abstract: Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.

Abstract: A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.

Abstract: Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad are provided. One window includes a first portion and a second portion. The first portion includes a first material, and the second portion includes a second material different than the first. Another window includes a substantially transparent gel. In some instances, the gel includes a triblock copolymer and a plasticizing oil. An additional window includes an upper window, a housing, and a diaphragm. The housing may allow a fluid to flow into and out of a space between the housing and the diaphragm. In another embodiment, a window includes a layer of material coupled to lateral surfaces of the window. In some cases, the window may be disposed within an opening in a polishing pad, and movement of the window within the polishing pad may compress the layer of material.