Abstract: Systems and methods for dynamic slurry blending and control are described. A method comprises applying a slurry to a wafer during a polishing process, detecting a wafer property during the polishing process, and changing a slurry property during the polishing process based, at least in part, upon the detected wafer property. In another embodiment, a system comprises a slurry mixer, a polisher coupled to the slurry mixer via a slurry feeder, the polisher being configured to receive a slurry from the slurry mixer via the slurry feeder and to apply the slurry to a wafer during a polishing process, and a computer coupled to the slurry mixer and to the polisher, the computer being configured to receive a signal indicative of a detected wafer property and to control the slurry mixer to change a slurry property during the polishing process based, at least in part, upon the detected wafer property.

Abstract: A method of measuring a change in thickness of a layer of material disposed on a wafer while polishing the layer. Light is directed at the surface of the wafer from an optical sensor disposed within the polishing pad. The intensity of the reflected light is measured by a light detector also disposed in the polishing pad. The intensity of the reflected light varies sinusoidally with the change in layer thickness as the layer is removed. By measuring the absolute thickness of the layer at two or more points along the sinusoidal curve, the sinusoidal curve is calibrated so that a portion of the wavelength of the curve corresponds to a change in thickness of the layer.

Abstract: Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includes a light source and a light detector. The light source emits light, and light emitted from the light source is directed through the first portion and to a surface of the film being polished. Light reflecting from the surface of the film being polished and passing through the first portion is received at the light detector. An electronic signal is generated based on the light received at the light detector. When the electronic signal is evaluated not to satisfy one or more constraints, a gain for the light detector is adjusted so that the electronic signal would satisfy the one or more constraints.

Abstract: A polishing layer of a polishing has a window member with a top surface positioned a predetermined distance below the polishing surface. A transparent layer can be positioned below the polishing layer and supporting the window member.

Abstract: A substrate polishing apparatus polishes a substrate to a flat mirror finish. The substrate polishing apparatus has a polishing table against which a substrate is pressed, a light-emitting and light-receiving device to emit measurement light from the polishing table to the substrate and to receive reflected light from the substrate for measuring a film on the substrate, a fluid supply passage for supplying a measurement fluid, through which the measurement light and the reflected light pass, to a fluid chamber provided at a light-emitting and light-receiving position of the polishing table, and a fluid supply control device for controlling supply of the measurement fluid to the fluid chamber.

Abstract: A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.

Abstract: A chemical mechanical polishing pad. The pad includes a surface and a polymer matrix capable of transmitting at least a portion of incident radiation. In addition, at least one embedded structure in the polymer matrix, including a portion of the pad where the embedded structure is not present, and a window integral to the pad defined by the portion of the pad where the embedded structure is not present.

Abstract: A polishing pad provides excellent optical detection accuracy properties over a broad wavelength range (particularly at the short-wavelength side). A method for manufacturing a semiconductor device includes a process of polishing the surface of a semiconductor wafer with this polishing pad. The polishing pad has a polishing layer containing a polishing region and a light-transmitting region, wherein the light-transmitting region includes a polyurethane resin having an aromatic ring density of 2 wt % or less, and the light transmittance of the light-transmitting region is 30% or more in the overall range of wavelengths of 300 to 400 nm.

Abstract: An object of the present invention is to provide a polishing pad excellent in optical detection accuracy in a broad wavelength range (particularly at the short-wavelength side) and capable of preventing a slurry from leaking from the boundary between a polishing region and a light-transmitting region. Disclosed is a polishing pad including at least a transparent support film laminated on one side of a polishing layer including a polishing region and a light-transmitting region, wherein the light transmittance of an optical detection region containing at least the light-transmitting region and the transparent support film is 40% or more in the overall range of wavelengths of 300 to 400 nm.

Abstract: A system for in-situ monitoring at least one aspect of a chemical mechanical planarization process can include a CMP pad, CMP pad dresser with at least a translucent portion, and an optical sensor. The optical sensor can be configured to optically engage the CMP pad through the translucent portion of the CMP pad dresser. Methods of monitoring chemical mechanical planarization processes can include using such CMP pad dresser to view a performance characteristic through the CMP pad dresser.

Abstract: Devices, systems and methods for monitoring characteristics of semiconductor substrates and workpieces during planarization and for endpointing planarization processes are provided. The invention utilizes a fiber optic contact sensor incorporated into a planarizing pad or pad-subpad assembly for process monitoring of mechanical energy (e.g., mechanical vibration) and acoustical energy (e.g., ultrasonic vibration) that allows an operator to determine status and/or an endpoint of a planarizing or polishing process. In another embodiment, the invention utilizes a fiber optic contact sensor incorporated into a table support for a planarizing pad.

Abstract: A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

Abstract: A loading device of chemical mechanical polishing (CMP) equipment for processing semiconductor wafers is provided. The loading device includes a loading cup having a cup-like bath, a cup plate installed in the bath, and a loading plate supported on the cup plate for absorbing shock and seating the wafer. A driving device and a driving shaft horizontally pivot and vertically move the loading cup between a platen of a polishing apparatus and a spindle. An arm connects the loading cup and the driving shaft. At least one through hole is located in a mutually corresponding position of the bath, the cup plate, and the loading plate of the loading cup. A probe assembly optically detects a polished thickness at a polished point on the wafer.

Abstract: A tool grinding machine has a machine control unit, which by means of a suitable measuring device, which for instance comprises a tracer (9) and a measuring module, first determines the wobble runout with respect to the ideal receptacle axis (C) of a workpiece receptacle. In the grinding machining of the blank (7) or a workpiece, this wobble runout is taken into account and compensated for; that is, the grinding tools are made to trace a tumbling workpiece in such a way that the workpiece is machined to the exact intended dimensions and concentrically.

Abstract: The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing (3) for forming a polishing chamber (2) therein, a rotational table (1) for holding and rotating a substrate (W), a polishing tape supply mechanism (6) for supplying a polishing tape (5) into the polishing chamber (2) and supplied to the polishing chamber (2), a polishing head (35) for pressing the polishing tape (5) against a bevel portion of the substrate (W), a liquid supply (50) for supplying a liquid to a front surface and a rear surface of the substrate (W), and a regulation mechanism (16) for making an internal pressure of the polishing chamber (2) being set to be lower than an external pressure of the polishing chamber (2).

Abstract: Methods and apparatus for controlling the removal of material from microfeature workpieces in abrasive removal processes. An embodiment of such a method comprises irradiating a periodic structure of the workpiece and obtaining an intensity distribution of radiation returning from the periodic structure. The workpiece can be irradiated with a wide spectrum of wavelengths (e.g., white light), or the workpiece can be irradiated with a laser or lamp at specific wavelengths. The intensity distribution can be an image or other signal from which a dimension or other physical parameter of the periodic structure can be determined. For example, the intensity distribution can be an intensity signal of radiation returning from the workpiece in a selected bandwidth (e.g., 200 nm-900 nm) or an image of a diffraction pattern of radiation that has been scattered by the periodic structure. The method further includes outputting a control signal based on the obtained intensity distribution.

Abstract: An apparatus for measuring ground amounts of a liquid crystal display panel includes a grinding unit for grinding upper and lower marginal portions of a unit liquid crystal display panel, a first imaging system for producing images of a ground surface of the upper marginal portion of the unit liquid crystal display panel, and a second imaging system for producing images of a ground surface of the lower marginal portion of the unit liquid crystal display panel.

Abstract: A wafer polishing apparatus includes a polishing tape extending between two guide rollers, a first surface of the polishing tape contacting a surface of a wafer to be polished, a polishing head including a pusher pad, the pusher pad adapted to push the polishing tape against the surface of the wafer to be polished, a color image sensor adjacent to the polishing tape, the color image sensor being adapted to detect a color image of the polishing tape and to output a signal corresponding to the detected color image, and a controller connected to the color image sensor, the controller being adapted to receive the signal output from the color image sensor and to determine when a color of the color image detected by the color image sensor changes, a change in the color image indicating a polishing end point.

Abstract: A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part.

Abstract: A tomographic system includes a reporting device colocated and juxtaposed an object so that both are ground through grinding to various sectioning depths as the reporting device is ground down exposing a reporting marker along a length of the reporting device for indicating the depth of sectioning for accurate precise depth of grinding well suited for precise sectioned tomographic imaging.

Abstract: A substrate polishing apparatus for polishing a polishing surface of a substrate has a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device. The table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: An eyeglass lens processing apparatus for processing an eyeglass lens, includes: a facetting tool that facets an edge corner of the lens which has been finished; a lens chuck that holds the lens; an input unit that inputs a target lens shape; a lens measuring unit that obtains front and rear edge paths of the lens, which has been finished, based on the input target lens shape; a display unit that displays a front outline graphic and a side outline graphic as view from at least one direction based on the measured front and rear edge paths; and a setting unit that sets a facetting area of the lens. The display unit displays the set facetting area in the front and side outline graphics.

Abstract: An apparatus 40 for sharpening a router or shaper bit 12 of the type having a flat cutting face 18. The apparatus 40 includes a chuck 64 holding the cutting bit 12. A grinding wheel 108 has a flat grinding face 110 and a grinding wheel shaft 116 on which the grinding wheel 108 rotates. A chuck support supports the chuck 64 and positions it so that the bit cutting face 18 is in a plane parallel to and in front of the flat face 110 of the grinding wheel 108. A side adjustment plate 46 has an index dial by which the side adjustment plate 46 is moved incrementally, in small amounts, to move the cutting face 18 of bit 12 into and against the grinding wheel face 110 during the grinding process. A carriage plate 44 permits moving the bit 12 back and forth in a plane perpendicular to the grinding wheel shaft. A laser 314 directs a beam onto a mirror 318 affixed to the bit cutting face 28.

Abstract: A tomographic system includes a reporting device colocated and juxtaposed an object so that both are ground through grinding to various sectioning depths as the reporting device is ground down exposing a reporting marker along a length of the reporting device for indicating the depth of sectioning for accurate precise depth of grinding well suited for precise sectioned tomographic imaging.

Abstract: A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table.

Abstract: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

Abstract: An wafer polishing pad assembly for use in CMP includes an optical sensor for sensing reflectivity of the wafer during polishing, and produces a corresponding signal, and transmits the signal from the rotating pad to a stationary portion of the assembly. The signal is transmitting off the pad through non-contact couplings such inductive coupling or optical couplings after being converted into signal formats enabling non-contact transmission.

Abstract: A polishing pad can include a first layer and a second layer. The first layer can have a first polishing surface and a first opening. The second layer can have an attaching surface and a second opening substantially contiguous with the first opening. The polishing pad can further include, a pad window lying within the first opening. The pad window can include a second polishing surface. When the pad would be attached to a platen, the first and second polishing surfaces can lie along a same plane, and an opposing surface of the pad window can abut an exterior surface of a platen window. In another aspect, a polishing apparatus can include an exterior surface of a platen window abutting the polishing pad. In still another aspect, a process of polishing can include polishing a workpiece such that the pad window contacts the workpiece and the platen window simultaneously.

Abstract: In an apparatus and a method for correcting a grinding amount of a unit liquid crystal display panel, by grinding an edge of a unit liquid crystal display panel; generating grinding pictures of the unit liquid crystal display panel; calculating an error value by comparing the grinding pictures with a reference picture; and changing a set value of a grinding unit according to the error value. In addition, by disposing a grinding amount correcting apparatus in a grinding apparatus, correcting a grinding amount of a unit liquid crystal display panel can be performed by an automatic system.

Abstract: A method of detecting wear and damage to a rotary cutting blade for singulating a substrate is provided comprising the steps of providing a sensor to locate a first detecting position at an edge of the blade and performing dicing with the blade while the sensor is maintained substantially at the first detecting position for detecting damage to the blade. Subsequently, an extent of wear of the blade is determined by driving the sensor in the direction of the blade to locate a second detecting position at the edge of the blade as a diameter of the blade is reduced due to dicing. Thereafter, while dicing is performed with the blade, the sensor is maintained substantially at the second detecting position for detecting damage to the blade.

Abstract: A method of calibrating or compensating a sensor for measuring property of target surface is provided. In one embodiment, a liquid reference surface is formed on a platen. A sensor is used to measure a feature property of the reference surface. The measured feature property of the reference surface may be used to calibrate the sensor. Further, the sensor is used to measure the feature property of a polishing pad. The measured feature property of the reference surface may be used to compensate the measured feature property of the polishing pad.

Abstract: A polishing pad forms a planar surface on glass, semiconductors, dielectric material/metal composites and integrated circuits, as well as a polishing apparatus where it is difficult for the surface of the substrate to be scratched, the state of polishing can be accurately measured optically during polishing, and whether or not the entire surface of the workpiece is uniformly polished can be measured.

Abstract: Electrically powered devices are provided that are generally capable of automatically adjusting an operating speed of a tool removably connected to the device. The device includes circuitry that evaluates tool wear for the tool removably connected to the device, produces a tool wear speed related signal, and adjusts the operating speed of the tool based on the speed related signal. The device may further be capable of automatically setting the initial operating speed of the particular tool removably connected to the device by identifying the particular tool and setting the initial operating speed which may later be adjusted.

Abstract: The present disclosure relates to automatic deposition profile targeting with a combined deposition/polishing apparatus which obtains matching deposition and subsequent polishing profiles by use of feedback data from an advanced polish endpoint system in an advanced process control system.

Abstract: A method of processing an article with a coated abrasive product, including a repeat of a single marking, comprises detecting at least two characteristics of the repeat of a single marking. The repeat is placed along the length of the abrasive product at a first major surface, wherein each of the detected characteristics conveys independent information regarding the abrasive product. The method further includes comparing the information to a database. A method of acquiring information of the coated abrasive product includes detection and comparing steps.

Abstract: A computer program product that determines a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matches the spectra with indexes in a library and uses the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.

Abstract: A polishing pad, platen, method of monitoring, method of manufacturing, and method of detecting using a pseudo window area, where the pseudo window area has a thickness less than a thickness of a polishing layer and a thickness greater than zero.

Abstract: During the polishing of a wafer 2, the wafer 2 is illuminated with measuring light emitted from a light source 21, and the spectroscopic intensity of the reflected light is detected by a linear sensor 31. The signal processing part 11 monitors the polishing state of the wafer 2 on the basis of detection signals from the sensor 31, and detects the polishing endpoint of the wafer 2. The shutter mechanism control part 14 controls the motor 13b of the shutter mechanism 13 in response to the polishing endpoint detection signal from the signal processing part 11, and causes a light blocking member 13a to advance into the light path of the measuring light, so that the measuring light is blocked with respect to the wafer 2. As a result, the effect of the measuring light used for the monitoring of the polishing state on the object of polishing can be reduced.

Abstract: Polishing pads, planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. The polishing pads, for example, can be web-format pads, and the planarizing machines can be web-format machines. In a typical application, the web-format machines have a pad advancing mechanism and stationary table with a first dimension extending along a pad travel path, a second dimension transverse to the first dimension, and an illumination site from which a laser beam can emanate from the table. The pad advancing mechanism moves the pad along the pad travel path to replace worn portions of the pad with fresh portions. In one embodiment of the invention, a web-format polishing pad includes a planarizing medium and an optical pass-through system having a plurality of view sites through which a light beam can pass through the pad.

Abstract: An automated drill bit sharpening and verification system employing one or more electronic optical assemblies for gathering orientation data of a drill bit to be sharpened. The drill bit is rotated and aligned to a grinding assembly based on the orientation data. The orientation data of the drill bit may be gathered by illuminating a cutting tip of the drill bit with an illumination ring. Additionally, the orientation data of the drill bit may be gathered by capturing two views (e.g., orthogonal views or front and side views) of the cutting tip of the drill bit.

Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting two or more reference spectra. Each reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectra is selected for particular spectra-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectra-based endpoint logic. The method includes obtaining two or more current spectra. Each current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved.

Abstract: A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information.

Abstract: A lapping machine that polishes a head block in which plural head devices are connected in a row includes a jig that has a bottom surface that opposes to a grinding plane, and fixes the head block onto the bottom surface, a pressure mechanism that applies a pressure to the head block against the grinding plane, a detector that is connected to the head block and detects a grinding amount of the head block, and a dummy block fixed onto the bottom surface adjacent to the head block.

Abstract: A reconditioning system for reconditioning a damaged polishing pad is disclosed. The reconditioning system includes a reconditioning disk including a plurality of diamonds for reconditioning the polishing pad, wherein each diamond fluoresces when being exposed to a light energy source.

Abstract: A polishing pad used in a CMP step in the manufacture of a semiconductor integrated circuit device is relatively expensive; thus, it is necessary to avoid a wasteful exchange of the pad. Accordingly, it is important to measure the abrasion amount of this pad precisely. However, in ordinary measurement thereof through light, the presence of a slurry hinders the measurement. In measurement thereof with a contact type sensor, a problem that pollutants elute out is caused. In a CMP step in the invention, the height position of a dresser is measured while the dresser operates, thereby detecting the abrasion amount or the thickness of a polishing pad indirectly. In this way, the time for exchanging the polishing pad is made appropriate.

Abstract: Various forms of knife guides are provided for knife sharpeners to minimize damage to the knife blade. One of the forms of knife guides comprises non-contact optical arrangements which includes a light source, at least one light detector and an indicator that monitors and displays the intensity of light reflected from the blade surface.

Abstract: A projecting/receiving unit (52) projects a laser light to a peripheral portion (30) and receives the reflected light while a liquid is being fed to a substrate (14) and is flowing on the peripheral portion (30). A signal processing controller (54) processes the electric signal of the reflected light to decide the state of the peripheral portion (30). The state of the peripheral portion being polished is monitored. Moreover, the polish end point is detected. A transmission wave other than the laser light may also be used. The peripheral portion (30) may also be enclosed by a passage forming member thereby to form a passage properly. The peripheral portion can be properly measured even in the situation where the liquid is flowing on the substrate peripheral portion.

Abstract: A polishing pad, platen, method of monitoring, method of manufacturing, and method of detecting using a pseudo window area, where the pseudo window area has a thickness less than a thickness of a polishing layer and a thickness greater than zero.

Abstract: A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information.

Abstract: By providing an eddy current sensor element in a polishing tool at a reduced height level in combination with a corresponding optical endpoint detection system, standard polishing pads may be used, thereby enhancing the lifetime of the polishing pad and increasing tool utilization.