Abstract: A method of manufacturing a multi-layer ceramic electronic part involves the steps of preparing an unbaked laminated body containing a ceramic layer and internal electrodes laminated on one another, applying and drying a conductor, into which is added a material common with a ceramic forming the ceramic layer of the laminated body, on edge portions of the unbaked laminated body, forming external electrodes in contact with the internal electrodes at end surfaces of the laminated body, and baking the laminated body.

Abstract: A dielectric ceramic composition wherein the dielectric constant ∈ is large, the temperature coefficient &tgr;f of the resonance frequency is close to 0, and which as a large Q value, is obtained by adding to and blending with a ceramic composition whose &tgr;f of the resonance frequency is large on the plus side a ceramic composition whose temperature coefficient &tgr;f is large on the minus side. In an Li2O—R2O3—TiO2-based composition, an improved dielectric constant ∈ can be achieved by introducing a specific quantity of Bi2O3, and &tgr;f can be shifted to the plus side and in addition a considerable improvement in Qf achieved by introducing a specific quantity of MO, where M is one or two of Ca and Sr. Furthermore, by introducing a specific quantity of Na2O together with the MO (where M is one or two of CA and Sr), in particular in the case of material of ∈r>150, it is possible to control &tgr;f to the vicinity of 0 while maintaining Qf at an high value.

Abstract: A piezoelectric ceramic material having the molar composition Pb(1+c)−x−(3/2a)−1/2(x·b)A1xA2a(Zry(1−x·b−x·z)Ti(1−y)(1−x·b−x·w))(B1bB2zB3w)xO3 where A1 is selected from the group Ca, Mg, Sr, Ba, or their mixtures, A2 is selected from the group of rare-earth elements or their mixtures, B1 is selected from the group Nb, Ta, or Sb or their mixtures, B2 is Cu or a mixture of Cu with at least one element selected from the group Zn, Ni, Co, or Fe, and B3 is Fe, and where the following applies: 0.001≦a≦0.05; 0.05≦b≦0.90; 0≦c≦0.04; 0.005≦x≦0.03; 0.5≦y≦0.55; 0.05≦z≦0.90; 0≦w≦0.5. Furthermore, an electroceramic multilayer component is described having insulating layers containing such a material.

Abstract: A perovskite compound of the formula, (Na1/2Bi1/2)1-xMx(Ti1-yM′y)O3±z, where M is one or more of Ca, Sr, Ba, Pb, Y, La, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu; and M′ is one or more of Zr, Hf, Sn, Ge, Mg, Zn, Al, Sc, Ga, Nb, Mo, Sb, Ta, W, Cr, Mn, Fe, Co and Ni, and 0.01<x<0.3, and 0.01<y<0.3, and z<0.1 functions as an electromechanically active material. The material may possess electrostrictive or piezoelectric characteristics.

Abstract: A piezoelectric ceramic composition is provided, which includes a ceramic composition expressed by a general formula: Sr1-x-yM1xM2yBi2(Nb1-aTaa)2-zTizO9, wherein M1 is at least one element selected from the group consisting of Ca and Ba, M2 is at least one element selected from the group consisting of La, Y, Dy, Er, Yb, Pr, Nd, Sm, Eu and Gd, and x, y, z and a in the general formula respectively are in the range of 0.0≦x<0.9, 0.0<y<0.3, 0.0≦z<0.3, and 0.0≦a≦1.0. This makes it possible to provide a piezoelectric ceramic composition that is free of lead and has a larger electromechanical coupling factor than a conventional bismuth layered compound, and a piezoelectric element using the same.

Abstract: A dielectric ceramic is made of a sintered body of a complex oxide including at least one element selected from the group consisting of Zr, Ti and Mn, at least one element selected from the group consisting of Mg, Zn and Co, and at least one element selected from the group consisting of Nb and Ta, wherein, the complex oxide is represented by a formula xZrO2-yTiO2-zA(1+w)/3B(2−w)/3O2 where ‘A’ in the formula denotes at least one element selected from the group (A) consisting of Mg, Zn and Co, ‘B’ denotes at one element selected from the group (B) consisting of Nb and Ta; x, y, z and w denote values in the respective ranges of 0.20≦x≦0.55, 0.40≦y≦0.55, 0.05≦z≦0.25, and 0≦w≦0.30, and x, y and z have a relationship represented as x+y+z=1; MnO is present in a range of 0.1 mol % to 1.

Abstract: A ceramic mass includes one ceramic material and at least a second different ceramic material. Glass material is arranged between the ceramic materials. The glass material reduces the sintering temperature of the ceramic mass and prevents the various ceramic materials from forming a mixed crystal when the ceramic mass is sintered. The ceramic mass is suitable for use in LTCC technology for the production of capacitors whose permittivity is dependent upon a specific temperature range.

Abstract: A dielectric ceramic composition comprising a main component including 53.00 to 80.00 mol % magnesium oxide converted to MgO, 19.60 to 47.00 mol % titanium oxide converted to TiO2 and 0.05 to 0.85 mol % manganese oxide converted to MnO. This dielectric ceramic composition may comprises 0.00 to 0.20 mol % of at least any one of vanadium oxide, yttrium oxide, ytterbium oxide or holmium oxide converted to V2O5, Y2O3, Yb2O3 and Ho2O3 respectively.

Abstract: A method for making a raw dielectric ceramic powder having a composition represented by the general formula ABO3 includes the steps of allowing a carbonate powder of the element A to adsorb an organic polymer compound to produce an organic carbonate powder containing the adsorbed organic polymer compound, mixing the organic carbonate powder and an oxide powder of the element B to prepare a mixed powder, and calcining the mixed powder. Also disclosed are a dielectric ceramic produced by molding and firing the raw dielectric ceramic powder produced by the method and a monolithic ceramic capacitor fabricated using the dielectric ceramic.

Abstract: This invention provides tunable devices incorporating the dielectric CaCu3Ti4O12. CaCu3Ti4O12 is especially useful in tunable devices such as phase shifters, matching networks, oscillators, filters, resonators, and antennas comprising interdigital and trilayer capacitors, coplanar waveguides and microstrips.

Abstract: The dielectric porcelain of the present invention comprises a polycrystalline material of which a main component comprises oxides containing at least a rare earth element (Ln), Al, M (M represents Ca and/or Sr) and Ti as metal elements, wherein the thickness of a grain boundary layer is 20 nm or less, thereby achieving a high value of &egr;r, high Q factor and small absolute value of the temperature coefficient &tgr;f of resonant frequency in a high frequency region. Thus this dielectric porcelain is preferably used in dielectric resonators.

Abstract: Ceramics comprising filler crystal particles having an average particle diameter of not smaller than 2.5 &mgr;m and a matrix crystal phase present on the grain boundaries of the filler crystal particles, the filler crystal particles being Al2O3 and the matrix crystal phase being diopside-type oxide crystals precipitated from the crystallized glass. The ceramics has a dielectric loss tangent at 60 to 77 GHz of not higher than 50×10−4, and can be effectively used as an insulating substrate in a wiring board for transmitting high-frequency signals.

Abstract: A dielectric ceramic contains a primary constituent represented by general formula (1): a[(SrbCa1-b)TiO3]-(1-a)[Bi2O3.nTiO2] (wherein a and b indicate molar amounts, and n indicates a molar ratio of TiO2 to Bi2O3), and a secondary constituent represented by general formula (2): xMgTiO3+yMnOm+zLn2O3 (wherein x, y, and z indicate weight per 100 parts by weight of the primary constituent, m is 1 to 2, and Ln is at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, and Er), wherein a, b, n, x, y, and z satisfy the expressions 0.88≦a≦0.92, 0.30≦b≦0.50, 1.8≦n≦3.0, 1.0≦x≦3.0, 0.1≦y≦2.0, and 0<z≦3.0. A ceramic electronic component including the dielectric ceramic is also disclosed.

Abstract: The present invention provides an electro-optic ceramic material including lead, zinc and niobium having a propagation loss of less than about 3 dB/cm and a quadratic electro-optic coefficient of greater than about 1×10−6 m2/V2 at 20° C. at a wavelength of 1550 nm. The present invention also provides electro-optic devices including an electro-optic ceramic material including lead, zinc and niobium having a propagation loss of less than about 3 dB/cm and a quadratic electro-optic coefficient of greater than about 1×10−16 m2 V at 20° C. at a wavelength of 1550 nm. The materials and devices of the present invention are useful in optical communications applications such as intensity and phase modulation, switching, and polarization control.

Abstract: The invention includes a ferroelectric physical vapor deposition target having a predominate grain size of less than or equal to 1.0 micron, and a density of at least 95% of maximum theoretical density. A method of making the target includes hot pressing a prereacted ferroelectric powder predominately including individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to 100 nanometers to form a physical vapor deposition target of desired shape. In one implementation, the prereacted ferroelectric powder is hot pressed at a maximum pressing temperature which is at least 200° C. lower than would be required to produce at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time.

Abstract: A low loss high-frequency dielectric ceramic composition for sintering at a low temperature and method of manufacturing the same which is characterized in that excellent dielectric properties such as a much lower sintering temperature and higher quality coefficient and dielectric constant, compared to a conventional high-frequency ceramic composition, a stabilized temperature coefficient, and a temperature compensating property varied according to a composition, are implemented using a low-priced material such as ZnO—Mo (M═Mg, Co, Ni)—TiO2. In addition, Ag, Cu, an alloy thereof, or an Ag/Pd alloy can be used as an internal electrode. Thus, the composition of the present invention can be used as a dielectric material for all sorts of high-frequency devices, such as a multilayer chip capacitor, multilayer chip filter, multilayer chip capacitor/inductor composite device and module, low temperature sintered substrate, resonator or filter and ceramic antenna.

Abstract: A dielectric ceramic composition of high dielectric constant and low dielectric loss, which can be co-fired with Ag electrodes, is provided for use in various parts of electric and electronic appliances. The composition is represented by the following chemical formula: a wt. % {xZrO2−yZnO−wNb2O5−zTiO2}+cwt. % glass frit wherein, 5.0 mol %≦x≦45.0 mol %; 1.5 mol %≦y≦19.0 mol %; 1.5 mol %≦w≦19.0 mol %; 40.0 mol %≦z≦59.0 mol % with the proviso that x+y+w+z=100, 75.0≦a≦97.0, and 3.0≦c≦25.0.

Abstract: A dielectric ceramic composition for microwave use having a relative permittivity &egr;r of 35 to 45, Qf0 value of more than 50,000 GHz (at 7 GHz), and dielectric characteristic of &tgr;f=0±10 ppm/° C includes an La2O3.Al2O3.SrO.TiO2 based ceramic composition and a specific quantity of Ga2O3 to increase the Qf0 value and a specific amount of Pr2O3to control the &tgr;f value.

Abstract: A dielectric compound for a multilayer ceramic condenser having a low sintering temperature and a high dielectric constant includes a base material of (BaxCa1−x)m(TiyZr1−y)O3 (where 0.7≦x≦1, 0.75≦y≦0.9, 0.998≦m≦1.006), an additive including MnO2 of less than 0.8 weight %, Y2O3 of less than 0.8 weight %, V2O5 of 0˜0.1 weight %, and a sintering aid of zLi2O−2(1−z)SiO2 (0.2≦z≦0.9) of less than 1.0 weight %. The weight % is a ratio relating to a weight of base material of the dielectric compound.

Abstract: An integrated ceramic module is formed of a first ceramic dielectric layer containing a glass as a sintering agent and having a high dielectric constant and high Q value, formed with an electronic component, and a second ceramic dielectric layer containing a glass as a sintering agent and having a low dielectric constant and a high Q value, formed with a signal transmission line.

Abstract: A non-reducing dielectric ceramic contains Ca, Zr and Ti as metallic elements and does not contain Pb. In a CuK&agr; X-ray diffraction pattern, the ratio of the maximum peak intensity of secondary crystal phases to the maximum peak intensity at 2&thgr;=25° to 35° of a perovskite primary crystal phase is about 12% or less, the secondary crystal phases including all the crystal phases other than the perovskite primary crystal phase. The non-reducing dielectric ceramic exhibits superior insulating resistance and dielectric loss after firing in a neutral or reducing atmosphere and high reliability in a high-temperature loading lifetime test and is useful for producing compact high-capacitance monolithic ceramic capacitors.

Abstract: A piezoelectric element includes: a ceramic substrate, an electrode and a piezoelectric portion made of a piezoelectric ceramic composition containing a Pb(Mg, Ni)1/3Nb2/3O3—PbZrO3—PbTiO3 ternary system solid solution composition being represented by the following general formula (1) as a main component: Pbx{(Mg1−yNiy)1/3×aNb2/3}bTicZrdO3 (1), wherein 0.95≦x≦1.05; 0.05≦y≦0.20; 0.90≦a≦1.10; b,c, and d are decimals falling in a range surrounded by (b, c, d)=(0.550, 0.425, 0.025), (0.550, 0.325, 0.125), (0.375, 0.325, 0.300), (0.100, 0.425, 0.475), (0.100, 0.475, 0.425) and (0.375, 0.425, 0.200) in the coordinates with coordinate axes of said b, c and d, and b+c+d=1.000. The electrode is electrically connected to the piezoelectric portion, and the piezoelectric portion is solidly attached to the ceramic substrate directly or via the electrode.

Abstract: An electromechanical vice includes a support structure, a component moveable with respect to the support structure, and a piezoelectric device mechanically coupled to both the support structure and the component. The piezoelectric device includes a polycrystalline body and electrodes located on the body. The body has a composition with a stoichiometry described by [Pb(Mg1/3Nb2/3)O3](1−x) [PbTiO3]x. The value of x is in the range of about 0.31 to about 0.47.

Abstract: The invention relates to piezoelectric ceramic materials consisting of lead zirconate titanate and (1) at least one of an alkaline earth pyrochlore and an alkali metal perovskite having the formula AB5+O3, where B is Nb, Ta, or Sb; or (2) an alkaline earth alkali metal perovskite having the formula A(T1+0.25B5+0.75)O3, where A is the alkaline earth metal, T is the alkali metal, and B is Nb, Ta, or Sb. The materials are characterized by excellent heat and time stability.

Abstract: The present invention relates to a microwave dielectric ceramic composition exhibiting excellent dielectric characteristics, including high Qu; and to a dielectric resonator which exhibits high Qu even when of large size. The present invention provides a microwave dielectric ceramic composition containing a primary component represented by CaTiO3-(1−x)REAlO3 [0.54≦x≦0.82] (wherein RE is composed only of an essential element La or composed of an essential element La and one or two optional elements selected from among Nd and Sm). The present invention also provides a microwave dielectric ceramic composition containing a primary component represented by the compositional formula: xCaTiO3-(1−x)LnAlO3 [0.54≦x≦0.82] (wherein Ln is at least one species selected from among Y, La, Nd, Sm, etc.); and Na in an amount as reduced to Na2O of 0.02 to 0.5 parts by mass on the basis of 100 parts by mass of the primary component.

Abstract: The invention provides a piezoelectric ceramic material comprising a Bi3TiNbO9 crystal and/or an MBi2Nb2O9 crystal which are each a bismuth layer compound, where M represents at least one element selected from Sr, Ba and Ca. The ceramic material contains Bi, Ti, M and Nb as main component elements. The molar ratio as oxides of the main component elements is given by (Bi3−xMx)z (Nb1+yTi1−y)O9 provided that 0<x, y≦0.8 and 0.95≦z≦1.05. When the molar ratio of Ba/(M+Bi) is given by xB/3 and the molar ratio of Ca/(M+Bi) is given by xC/3, it is required that 0≦xB≦0.5 and 0≦xC<0.4. This piezoelectric ceramic material, free from any lead whatsoever, has a sufficiently high Curie point, and exhibits ever more improved piezoelectric properties.

Abstract: The present invention is directed to a new family of high Curie temperature, morphotropic phase boundary systems, based on the perovskite solid solution having the general formula (1−x)BiMeO3-xPbTiO3, where Me is a suitably sized cation or combination of cations and x is a molar fraction. The perovskite systems of the present invention offer room temperature properties analogous to, and high temperature properties superior to, commercially available PZT compositions. The perovskite of this invention exhibits a MPB between the rhombohedral and tetragonal phases. Further dopant strategies may be used for property optimization of the perovskite systems.

Abstract: The present invention provides a composition that can be sintered at a temperature of about 1025° C. or less to form an NPO dielectric ceramic. The composition according to the invention includes a mixture of from about 90% to about 99.5% by weight of a calcined (Ba, Ca, Sr, Nd, Gd)TiO3 main component and from about 0.5% to about 10% by weight of an additive component. The additive component includes a glass including by weight from about 45% to about 54% BaO, from about 19% to about 24% ZnO, from about 13% to about 20% B2O3, and from about 2% to about 23% SiO2.

Abstract: The present invention provides a dielectric ceramic composition comprising: 30 to 90% by weight of a crystallized glass powder capable of depositing a diopside crystal, 1 to 40% by weight of a calcium titanate powder, a strontium titanate powder or a mixed powder thereof, and 0 to 60% by weight of at least one kind of a powder selected from the group consisting of Al2O3, TiO2, ZrO2, MgTiO3, BaTi4O9, La2Ti2O7, Nd2Ti2O7, Ca2Nb2O7, SrZrO3 and CaZrO3, and a dielectric ceramics obtained by firing the same.

Abstract: A ceramic support element for a NOx trap which includes a NOx storage component comprising an alkali metal, the ceramic support having a composition lying within a ternary system selected from the group consisting of Al2TiO5—MgTi2O5—MgAl2O4 and Al2TiO5—FeTiO5—Al2O3, a coefficent of thermal expansion (22-800° C.) of less than 20×10−7/° C. and a modulus of rupture as measured on a solid rod of circular cross section of greater than 1000 pounds per square inch.

Abstract: A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (BaxSr1−x)TiO3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (BaxSr1−x)TiO3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Abstract: The present inventions provides a dielectric ceramic comprising an oxide containing, as a metal element, at least a rare earth element (Ln), Al, M (M is Ca and/or Sr) and Ti, and at least part of the oxide of Al being present as a crystal phase of &bgr;-Al2O3 and/or &thgr;-Al2O3, thereby having a high &egr; r, high Q value and a small temperature coefficient of resonance frequency in a high frequency region.

Abstract: A dielectric ceramic composition comprising at least a main component containing a dielectric oxide of a composition expressed by {(Sr1−xCax)O}m.(Ti1−yZry)O2 and a fourth subcomponent containing an oxide of R (where R is at least one element selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), wherein the symbols m, x, and y showing the molar ratio of the composition in the formula contained in the main component are in relations of 0.94<m<1.02, 0≦x≦1.00, and 0≦y≦0.20 and the ratio of the fourth subcomponent with respect to 100 moles of the main component, which is converted to the R in the oxide, is 0.02 mole≦fourth subcomponent<2 moles. According to this dielectric ceramic composition, it is possible to obtain a superior resistance to reduction at the time of firing, obtain a superior capacity-temperature characteristic after firing, and improve the accelerated life of the insulation resistance.

Abstract: A glass ceramic composition which can be fired at a low temperature and which has a high dielectric constant, a relatively small thermal expansion coefficient and a small temperature coefficient of dielectric constant is provided. The glass ceramic composition contains about 5% to 75% by weight of TiO2 powder, about 5% to 75% by weight of CaTiSiO5 powder and about 15% to 50% by weight of glass powder.

Abstract: A dielectric ceramic composition for radiofrequency applications has a crystalline primary component having a perovskite crystal structure, and an auxiliary component. The crystalline primary component is represented by the formula: (1−x)MeTiaO1+2a−xLn(Ma1/2Mb1/2)bO(3+3b)/2 wherein Me is at least one of Ca and Sr; Ln is a rare earth element; Ma is at least one of Mg and Zn; Mb is at least one of Sn and Zr; x represents a mole fraction of Ln(Ma1/2Mb1/2)bO(3+3b/2); and a and b represent molar ratios, wherein 0.95≦a≦1.05, 0.9≦b≦1.05, and 0.3≦x≦0.5. The auxiliary component includes B and Si. The composition can be sintered at 1,000° C. or less. An electronic component includes a ceramic element of the dielectric ceramic composition and conductors provided in the interior of the ceramic element.

Abstract: The invention relates to a low temperature co-firing ceramic (LTCC) composition for microwave frequency represented by the following formula 1:

Abstract: A non-reducing dielectric ceramic contains Ca, Zr and Ti as metallic elements and does not contain Pb. In a CuK&agr; X-ray diffraction pattern, the ratio of the maximum peak intensity of secondary crystal phases to the maximum peak intensity at 2&thgr;=25° to 35° of a perovskite primary crystal phase is about 12% or less, the secondary crystal phases including all the crystal phases other than the perovskite primary crystal phase. The non-reducing dielectric ceramic exhibits superior insulating resistance and dielectric loss after firing in a neutral or reducing atmosphere and high reliability in a high-temperature loading lifetime test and is useful for producing compact high-capacitance monolithic ceramic capacitors.

Abstract: A method of producing an electronic device comprising a dielectric layer constituted by a dielectric ceramic composition containing a main component expressed by a composition formula of {(Sr1-xCax)O}m. (Ti1-yZry)O2, wherein the mole ratio m satisfies 0.94<m<1.08, the code x satisfies 0≦x≦1.00 and the code y satisfies 0≦y≦0.20; and a fourth subcomponent including an oxide of R (note that R is at least one of rare-earth element); characterized by producing the dielectric ceramic composition by using a composition source material wherein at least a part of a source material for the fourth subcomponent is brought to react with a source material for the main component.

Abstract: A dielectric ceramic composition for high frequency is obtained by using La and/or Nd in the main composition and iron as the additive. The main composition is expressed by the general formula x(CayTiO2+y)·(1−x)(LnzAl2−zO3) where Ln is at least one rare earth element containing La and/or Nd, and 0.600≦x≦0.730, 0.950≦y≦1.050, 0.980≦z≦1.030, and 0.01 to 0.5 parts by weight of iron as Fe2O3 is added to 100 parts by weight of the main composition. NiO may be comprised together with the Fe2O3.

Abstract: A piezoelectric material exhibiting a high Curie point and a high displacement at a low drive voltage is provided. The piezoelectric material contains as a main component a composite oxide and is expressed by the general formula [Pb{1−x1−x2−&agr;(x1−x2)}, A1x1, A2x2] {(Tiy, Zrz) (1−&bgr;(x1−x2)−&ggr;), (Y0.5, Nb0.5)&ggr;}O3, where y+z=1, 1.15<z/y<1.30 and 0<&ggr;<0.1; and A1, A2, x1, x2 satisfy any of the conditions (i) A1 is at least selected one of Ce and La, A2 is K, 0.02≦x1<0.08, 0≦x2≦0.05 (0.02≦x1+x2≦0.1, x1≦x2) and &agr;=0, &bgr;=0.25 or &agr;=0.5, &bgr;=0, and (ii) A1 is Sr, A2 is Ba, 0.03≦x1≦0.05, 0.03≦x2≦0.05 (|x1−x2|≦0.01), and &agr;=0, &bgr;=0.

Abstract: The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron.

Abstract: A dielectric ceramic composition comprising a main component including a dielectric oxide expressed by a composition formula {(Ca1-xMex)O}m.(Zr1-yTiy)O2, and a first subcomponent including at least one of oxides selected from V, Nb, W, Ta, Mo and Cr and compounds which become an oxide of these after firing; wherein a symbol Me in the formula included in the main component is at least one of Sr, Mg and Ba, symbols m, x and y indicating composition mole ratios in the formula included in the main component are 0.8≦m≦1.3, 0≦x≦1.00 and 0.1≦y≦0.8, and a ratio of the first subcomponent to 100 moles of the main component is 0.01 atomic %≦the first subcomponent<5 atomic % in a conversion of metal element in an oxide.

Abstract: A dielectric ceramic composition comprising at least a main component containing a dielectric oxide of a composition expressed by {(Sr1−xCax)O}m·(Ti1−yZry)O2 and a first subcomponent containing at least one type of compound selected from oxides of V, Nb, W, Ta, and Mo and/or compounds forming these oxides after firing, wherein the symbols m, x, and y showing the molar ratio of the composition in the formula contained in the main component are in relations of 0.94<m<1.08, 0≦x≦1.00, and 0≦y≦0.20 and the ratio of the first subcomponent with respect to 100 moles of the main component, which is converted to the metal element in the oxide, is 0.01 mole≦first subcomponent<2 moles. According to this dielectric ceramic composition, it is possible to obtain a superior resistance to reduction at the time of firing, obtain a superior capacity-temperature characteristic after firing, and improve the accelerated life of the insulation resistance.

Abstract: A microwave dielectric ceramic composition comprises a composition of the formula xMO-yLa2O3-zTiO2 wherein M is selected from Sr and Ca and x:y:z=1:2:4, 2:2:5, 1:2:5, 1:4:9.

Abstract: Crystalline dielectric lead zirconate titanate thin film composites on metallic foils exhibit high dielectric constants, low dielectric loss (loss tangent of less than 5%) and low leakage current. The lead zirconate titanates may be of the formula PbZrxTiyOz (PZT) wherein x and y are independently from about 0.35 to about 0.65 and z is from about 2.5 to about 5.0. The thin foil dielectric composites can be prepared by a variety of methods including deposition of PZT thin films on brass, platinum, titanium, and stainless steel foils using sol-gel processing, sputtering deposition and chemical vapor deposition.

Abstract: A dielectric ceramic includes ABO3 as a major component and R and M as accessory components, where A is at least one of Ba, Sr and Ca; B is at least one of Ti, Zr and Hf; R is at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y; and M is at least one of Ni, Co, Fe, Cr and Mn. The dielectric ceramic contains the components R and M at about 70% or more of analysis points in grain boundaries. This dielectric ceramic is suitable for use in dielectric ceramic layers of a multilayer ceramic capacitor obtained by firing in a reducing atmosphere, has a long life at high temperatures and high voltages, exhibits less time-dependent change in electrostatic capacity under application of a direct-current voltage and has satisfactory reliability even when its thickness is reduced.

Abstract: The disclosed invention relates to PMN compounds, powders and products thereof, especially to PMN-PT compounds, powders and products which have the perovskite structure. The PMN-PT compounds are characterized by the formula (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3 where x is about 0.0 to about 0.95, preferably x is about 0.0 to about 0.40. The compounds are made by sintering a precursor powder of the compound. PMN-PT products produced from the precursor powders have much greater densities than products produced from PMN-PT starting powder. The invention also relates to textured PMN-PT produced from the precursor powders.

Abstract: A non-reducing dielectric ceramic contains Ca, Zr and Ti as metallic elements and does not contain Pb. In a CuK&agr; X-ray diffraction pattern, the ratio of the maximum peak intensity of secondary crystal phases to the maximum peak intensity at 2&thgr;=25° to 35° of a perovskite primary crystal phase is about 12% or less, the secondary crystal phases including all the crystal phases other than the perovskite primary crystal phase. The non-reducing dielectric ceramic exhibits superior insulating resistance and dielectric loss after firing in a neutral or reducing atmosphere and high reliability in a high-temperature loading lifetime test and is useful for producing compact high-capacitance monolithic ceramic capacitors.

Abstract: The present invention discloses a dielectric ceramic composition having a formula represented by (1−x)Nd(Ga1−yAly)O3-xCaTiO3, wherein x refers a mole fraction of CaTiO3 to the composition and satisfies an expression of 0.5≦x≦0.8, and y refers a mole fraction of Al to Ga and satisfies an expression of 0≦y≦0.9. The present dielectric substance has a high dielectric constant and a high Q value and a resonant frequency temperature coefficient of near 0. Also, it can be sintered at a low temperature and thus replace the conventional dielectric materials used as a filter for parts of mobile communication or satellite communication appliances.

Abstract: A piezoelectric element includes: a ceramic substrate, an electrode and a piezoelectric portion made of a piezoelectric ceramic composition containing a Pb(Mg, Ni)1/3Nb2/3O3—PbZrO3—PbTiO3 ternary system solid solution composition being represented by the following general formula (1) as a main component: Pbx{(Mg1-yNiy)1/3xaNb2/3}bTicZrdO3(1), wherein 0.95≦x≦1.05; 0.05≦y≦0.20; 0.90≦a≦1.10; b,c, and d are decimals falling in a range surrounded by (b, c, d)=(0.550, 0.425, 0.025), (0.550, 0.325, 0.125), (0.375, 0.325, 0.300), (0.100, 0.425, 0.475), (0.100, 0.475, 0.425) and (0.375, 0.425, 0.200) in the coordinates with coordinate axes of said b, c and d, and b+c+d=1.000. The electrode is electrically connected to the piezoelectric portion, and the piezoelectric portion is solidly attached to the ceramic substrate directly or via the electrode.