Abstract: Dielectric materials are disclosed that are based on BaO--ZnO--Ta.sub.2 O.sub.5 represented by the formula Ba(Zn.sub.1/3 Ta.sub.2/3)O.sub.3. Ba has been partly replaced by K and either Zn or Ta has been replaced by at least one element selected from Mg, Zr, Ga, Ni, Nb, Sn. The dielectric materials have a relatively high permittivity, a small absolute value of the temperature coefficient of resonance frequency, and a high unloaded quality factor. A method for producing the dielectric materials is also disclosed which includes mixing given amounts of starting materials, such as, for example, BaCO.sub.3, ZnO, Ta.sub.2 O.sub.5, K.sub.2 CO.sub.3, MgCO.sub.3, SnO.sub.2 or ZrO.sub.2, compacting the mixture to produce a compact, sintering the compact in an oxidizing atmosphere such as, for example, air, at 1,400 and 1,600.degree. C., more preferably at 1,550 to 1,600.degree. C. for 2 hours, and then heating the sintered compact at a temperature lower than the sintering temperature by from 50 to 250.degree. C., e.g.

Abstract: The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

Abstract: The present invention provides a piezoelectric ceramic composition which predominantly comprises a composition represented by the following formula :(1-n)(K.sub.1-x-y Na.sub.x Li.sub.y).sub.m (Nb.sub.1-z Ta.sub.z)O.sub.3 -nM1M2O.sub.3wherein M1 represents a divalent metal element such as Mg, Ca, Sr or Ba; M2 represents a tetravalent metal element such as Ti, Zr, Sn or Hf; and x, y, z, m, and n satisfy the following conditions: 0.9.ltoreq.X; y.ltoreq.0.3; x+y<0.75; 0.ltoreq.z.ltoreq.0.3; 0.98.ltoreq.m.ltoreq.1.0; and 0<n<0.1.

Abstract: A crystal-oriented ceramic has an isotropic or pseudoisotropic perovskite-type-structure of not smaller than 10% in Lotgering orientation degree. The ceramic may contain at least one of Bi, Sr and Ca. A host material, a raw material capable of producing a guest material and an additive having the ability of converting a host material into a guest material are mixed and roll-pressed, and sintered under heat to give the crystal-oriented ceramic as a large-sized and bulky material. This crystal-oriented ceramic has good crystal orientation-dependent characteristics including piezoelectricity, pyroelectricity, ionic conductivity, giant magneto-resistivity effect, etc. This crystal-oriented ceramic can be produced by orienting epitaxially the polycrystals of an isotropic or pseudoisotropic perovskite oxide according to the orientation of the crystal plane or axis of a host material. The ceramic can be applied to an inexpensive and large-sized device.

Abstract: A dielectric ceramic essentially in the form of an aggregate of crystal grains each having a ferroelectric core enclosed in a paraelectric shell. The shells are created by thermal diffusion of magnesium into the crystal grains. Through control of the firing temperature and time the thicknesses of the shells are confined in the range of approximately 5-30% of the average grain size. The resulting ceramic is low in dielectric constant and favorable in temperature characteristic of capacitance, making it suitable for use in laminated capacitors.

Abstract: The present invention provides a piezoelectric ceramic composition which predominantly comprises a composition represented by the following formula :(1-n)(K.sub.1-x-y Na.sub.x Li.sub.y) .sub.m (Nb.sub.1-z Ta.sub.z)O.sub.3 -nM1M2M3O.sub.3wherein M1 represents a trivalent metal element such as Bi; M2 represents a monovalent metal element such as K, Na or Li; M3 represents a tetravalent metal element such as Ti, Zr, Sn or Hf; and x, y, z, m, and n satisfy the following conditions: 0.9.ltoreq.x; y.ltoreq.0.3; x+y<0.75; 0.ltoreq.z.ltoreq.0.3; 0.98.ltoreq.m.ltoreq.1.0; and 0<n<0.1.

Abstract: A capacitor including a ceramic dielectric of a dielectric ceramic composition including a doped barium-calcium-zirconium-titanate of the composition (Ba.sub.1-.alpha.-.mu.-.nu. A.sub..mu. D.sub..nu. Ca.sub..alpha.) [Ti.sub.1-x-.delta.-.mu.'-.nu.' Mn.sub..delta. A'.sub..mu.' Zr.sub.x ].sub.z O.sub.3, where A=Ag, A'=Dy, Er, Ho, Y, Yb and Ga; D=Nd, Pr, Sm, Gd; D'=Nb, Mo, 0.10.ltoreq.x.ltoreq.0.25, 0.ltoreq..mu..ltoreq.0.01, 0.ltoreq..mu.'.ltoreq.0.01, 0.ltoreq..nu..ltoreq.0.01, 0 .nu.'0.01, 0<.delta..ltoreq.0.01 and 0.995.ltoreq.z<1 and 0.ltoreq..alpha..ltoreq.0.05, and including at least two electrodes, is characterized by a high dielectric constant K and a long service life, a low loss factor, a high insulation resistance and a capacitance with a low voltage dependence. The temperature dependence of its dielectric constant K corresponds to the EIA-standard Y5V.

Abstract: A microwave dielectric ceramic composition is fabricated by adding one selected from a material containing Ba and a material containing Sr or a mixture of a material containing Ba and a material containing Sr to a composition formed of 25.about.43 wt % of TiO.sub.2, 39-57 wt % of ZrO.sub.2, and 7-28 wt % of SnO.sub.2 as an additive, wherein the additive is added by 0.2.about.8.0 wt % based on the total amount of the composition, and is capable of implementing a high dielectric constant and quality factor by sintering at a temperature of 1250.about.1400.degree. C.

Abstract: A barium titanate-based semiconducting ceramic, which contains BaTiO.sub.3 as a main component thereof, and Ba.sub.2 TiSi.sub.2 O.sub.8 and Ba.sub.n Ti.sub.m O.sub.n+2m (1.ltoreq.n.ltoreq.4, 2.ltoreq.m.ltoreq.13, n.ltoreq.m), respectively, as trace-phase compositions, wherein the ratio of the contents of about Ba.sub.2 TiSi.sub.2 O.sub.8 and Ba.sub.n Ti.sub.m O.sub.n+2m (Ba.sub.2 TiSi.sub.2 O.sub.8 /Ba.sub.n Ti.sub.m O.sub.n+2m) as the trace-phase compositions is in the range of about 0.5 to 80.0. This semiconductive ceramic exhibits excellent voltage resistance and ensures high reliability as a product element. Moreover, it has a suitable room temperature resistivity .rho.25 for functioning as a product element.

Abstract: The invention relates to a ceramic multilayer capacitor having a number of ceramic layers on the basis of a doped (Ba,Ca)[Ti,Zr]O.sub.3 as well as a number of electrode layers of Ni, the ceramic layers and the electrode layers being alternately stacked to form a multilayer structure which is provided with electric connections at two side faces, said electric connections being connected to a number of the electrode layers. The invention is characterized in that the composition of the main component of the doped (Ba,Ca)[Ti,Zr]O.sub.3 corresponds to the formula(Ba.sub.1-x Ca.sub.x)(Ti.sub.1-a-b-y Zr.sub.y Mn.sub.a Mo.sub.b A.sub.c).sub.k O.sub.3-.delta.wherein:0.00.ltoreq.x.ltoreq.0.050.10.ltoreq.y.ltoreq.0.250.00<a.ltoreq.0.010.00<b.ltoreq.0.010.00.ltoreq.c.ltoreq.0.010.99<k.ltoreq.0.999and wherein A stands for at least one element selected from the series including Y, Ho, Dy, Er, Yb, Ga, Ni, Mg, Zn and Al, the elements Y, Ga and Zn being preferred.

Abstract: A sol-gel precursor mixture for forming a perovskite ferroelectric material and a method for forming a ferroelectric material are provided. The precursor solution comprises a sol-gel formulation of a mixture of an inorganic salt of at least one metal, and metal-organic compounds of other constituent metals in a suitable pH controlled aqueous solvent mixture to form a stable, clear sol-gel mixture. The precursor solution and method provides for formation of thin layers of other ferroelectric dielectrics and piezoelectric materials, particularly lead containing materials, for application including non-volatile DRAMs, optoelectronic devices relying on non-linear optical properties, and piezoelectric devices, and is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS circuits.

Abstract: A novel ceramic ferrite/ferroelectric composite material having a low dissipation factor, voltage tunability, and proper impedance matching for the incident medium. The material comprises ferrites doped with the ferroelectric Barium Strontium Titanate (BSTO) or ferrites doped with the ferroelectric Barium Strontium Titanate (BSTO)/MgO. Preferred composites are magnesium ferrites doped with BSTO and magnesium ferrites doped with BSTO/MgO. Most particularly, the inventive composites are comprised of magnesium ferrites doped with Ba.sub.1-x Sr.sub.x TiO.sub.3 and magnesium ferrites doped with Ba.sub.1-x Sr.sub.x TiO.sub.3 /MgO, wherein x is greater than 0.00, but less than or equal to 0.75, and wherein the percent weight ratio of magnesium ferrite to BSTO or BSTO/MgO is 60 to 95 percent ferrite to 40 to 5 percent BSTO or 60 to 95 percent ferrite to 40 to 5 percent BSTO/MgO ferroelectric. A particularly well suited composite, i.e., one having a .mu./.di-elect cons.

Abstract: Multilayer capacitors with have been made including a cadmium silicate flux by firing in a closed crucible at about 1100.degree. C. to provide a high K and smooth X7R coefficient of K with temperature, but tend to acquire a low insulation resistance in a high temperature life test under voltage. This problem was solved heretofore by the added step of a post-sinter anneal. However, the anneal step adds cost and further complexity to the manufacturing process.

Abstract: A ceramic composition on the basis of a doped BaTiO.sub.3, a ceramic multilayer having such ceramic composition and a monolithic capacitor having such a composition are provided according to the invention. The composition corresponds to the formula(Ba.sub.1-a-b Ca.sub.a Dy.sub.b)(Ti.sub.1-c-d-e-f Zr.sub.c Mn.sub.d Nb.sub.e).sub.f O.sub.3+.delta.wherein: 0.00<a.ltoreq.0.200.006.ltoreq.b.ltoreq.0.0160.00<c.ltoreq.0.250.3b+0.7e<d.ltoreq.0.0140.001.ltoreq.e.ltoreq.0.0051.000<f.ltoreq.1.007.Capacitors having this ceramic composition as a dielectric material show an increased life-time well as a good resistance against degradation of their electrical properties if used at high temperatures under dc conditions.

Abstract: A composition of Ba.sub.2 Ti.sub.9 O.sub.20 suitable for use in microwave wireless communications is provided. Ba.sub.2 Ti.sub.9 O.sub.20 doped with Zr is formed by combining starting materials containing barium, titanium and zirconium. In a preferred embodiment of the invention, zirconium-doped Ba.sub.2 Ti.sub.9 O.sub.20 is formed by combining BaCO.sub.3 and TiO.sub.2, and substituting an appropriate amount of ZrO.sub.2 for a portion of the TiO.sub.2. The relative proportion of Ba.sub.2 Ti.sub.9 O.sub.20 obtained as a result is increased over that which may be obtained using other dopants, such as tin (Sn). Forming Ba.sub.2 Ti.sub.9 O.sub.20 with a Zr dopant in the appropriate amount also results in greater stability of the dielectric constant, an increase in the quality factor, and a decrease in the temperature coefficient than exhibited by other compositions of Ba.sub.2 Ti.sub.9 O.sub.20 that lack a Zr dopant.

Abstract: A dielectric ceramic composition including: a barium titanate containing principal component represented by the formula: (1-.alpha.-.beta.-.gamma.){BaO}.sub.m .multidot.TiO.sub.2 +.alpha.M.sub.2 O.sub.3 +.beta.Re.sub.2 O.sub.3 +.gamma.(Mn.sub.1-x-y Ni.sub.x Co.sub.y)O wherein M.sub.2 O.sub.3 is at least one of Sc.sub.2 O.sub.3 and Y.sub.2 O.sub.3 ; Re.sub.2 O.sub.3 is at least one of Sm.sub.2 O.sub.3, Eu.sub.2 O.sub.3, and Gd.sub.2 O.sub.3 ; 0.0025.ltoreq..alpha.+.beta..ltoreq.0.025, 0<.beta..ltoreq.0.0075, 0.0025.ltoreq..gamma..ltoreq.0.05, .gamma./(.alpha.+.beta.).ltoreq.4, 0.ltoreq.x<1.0, 0.ltoreq.y<1.0, 0.ltoreq.x+y<1.0, and 1.000<m.ltoreq.1.035, at least one of scandium oxide and yttrium oxide, at least one of samarium oxide, europium oxide and gadolinium oxide, and at least one oxide of magnesium in an amount of from about 0.5 to 5.0 mols calculated as MgO to 100 mols of the principal components and further containing from about 0.2 to 3.0 parts by weight of an Al.sub.2 O.sub.3 --MO--B.

Abstract: A monolithic ceramic capacitor has laminated plural dielectric ceramic layers, internal electrodes disposed between dielectric ceramic layers, and external electrodes formed at edge surfaces of the dielectric ceramic layers such that they are connected to alternate internal electrodes, wherein the dielectric ceramic layers are composed of a material comprising a principal component shown by the formula: (1-.alpha.-.beta.-.gamma.){BaO}.sub.m.TiO.sub.2 +.alpha.M.sub.2 O.sub.3 +.beta.Re.sub.2 O.sub.3 +.gamma.(Mn.sub.1-x-y Ni.sub.x Co.sub.y)O (wherein M.sub.2 O.sub.3 is at least one kind of Sc.sub.2 O.sub.3 and Y.sub.2 O.sub.3 ; Re.sub.2 O.sub.3 is at least one kind of Sm.sub.2 O.sub.3 and Eu.sub.2 O.sub.3 ; 0.0025.ltoreq..alpha.+.beta..ltoreq.0.025, 0<.beta..ltoreq.0.0075, 0.0025.ltoreq..gamma..ltoreq.0.05, .gamma./(.alpha.+.beta.).ltoreq.4, 0.ltoreq.x<1.0, 0.ltoreq.y<1.0, 0.ltoreq.x+y.ltoreq.1.0, and 1.000<m.ltoreq.1,035), and containing definite amounts of MgO and SiO.sub.2 as side components.

Abstract: A ceramic substrate comprises having two or more functional portions separated from each other, by providing a first region comprising a first dielectric porcelain having an insulating layer at the crystal grain boundaries of a semiconductor porcelain containing a semiconductivizing agent and a second region comprising a second dielectric porcelain with different dielectric constant from the first dielectric porcelain through the difference in amount or kind of the semiconductivizing agent from the first region.

Abstract: A monolithic ceramic capacitor composed of laminated plural dielectric ceramic layers, internal electrodes disposed between the dielectric ceramic layers and external electrodes formed at both the edge surfaces of the dielectric ceramic layers such that they are alternately connected to the internal electrodes, wherein the dielectric ceramic layers are composed of a material comprising principal components shown by the formula: (1-.alpha.-.beta.){BaO}.sub.m .cndot.TiO.sub.2 +.alpha.{(1-x)M.sub.2 O.sub.3 +xRe.sub.2 O.sub.3 }+.beta.(Mn.sub.1-y-z Ni.sub.y Co.sub.z)O (wherein M.sub.2 O.sub.3 is at least one of Sc.sub.2 O.sub.3 and Y.sub.2 O.sub.3 ; Re.sub.2 O.sub.3 is at least one of Gd.sub.2 O.sub.3, Tb.sub.2 O.sub.3 and DY.sub.2 O.sub.3 ; 0.0025.ltoreq..alpha..ltoreq.0.025, 0.0025.ltoreq..beta..ltoreq.0.05, .beta./.alpha..ltoreq.4, 0<x.ltoreq.0.50, 0.ltoreq.y<1.0, 0.ltoreq.z<1.0, 0.ltoreq.y+z.ltoreq.1.0, and 1.000<m.ltoreq.1,035), and containing definite amounts of MgO and SiO.sub.

Abstract: A high-dielectric lead-free paste serves for the manufacture of at least one area having a high dielectric constant in a ceramic multilayer circuit. The lead-free dielectric paste is basically made of barium titanate nano powder of a suitable particle size and sinters at temperatures below 1000.degree. C., preferably in a range of 800.degree. C. to 1000.degree. C.

Abstract: A dielectric ceramic essentially in the form of an aggregate of crystal grains each having a ferroelectric core enclosed in a paraelectric shell. The shells are created by thermal diffusion of magnesium into the crystal grains. Through control of the firing temperature and time the thicknesses of the shells are confined in the range of approximately 5-30% of the average grain size. The resulting ceramic is low in dielectric constant and favorable in temperature characteristic of capacitance, making it suitable for use in laminated capacitors.

Abstract: A particle of titanium compounds is in the form of a fine agglomerate comprising crystals of an alkaline-earth metal titanate represented by RTiO.sub.3 wherein R is an alkaline-earth metal and crystals of an alkali metal titanate represented by M.sub.2 Ti.sub.n O.sub.2n+1 wherein M is an alkali metal and n is an integer of 2 to 6, or these two kinds of crystals and crystals of titanium dioxide (TiO.sub.2), the two or three kinds of crystals being mingled together. A powder composed of such particles is produced by preparing a mixture from RO wherein R is an alkaline-earth metal or an alkaline-earth metal compound becoming RO when heated, M.sub.2 O wherein M is an alkali metal or an alkali metal compound becoming M.sub.2 O when heated, and TiO.sub.2 or a titanium compound becoming TiO.sub.2 when heated, in a ratio so that Z.gtoreq.X+mY wherein Z is the number of moles of TiO.sub.2, X is the number of moles of RO, Y is the number of moles of M.sub.

Abstract: Disclosed is a sintered piezoelectric ceramic which is resistant to the high voltage for polarization with no dielectric breakdown and has good moisture resistance. When a plurality of the ceramics are fired, they are prevented from being fused and combined together. The production costs of the ceramic are low. The sintered piezoelectric ceramic comprises particulate or agglomerate zirconia grains dispersed in piezoelectric ceramic grains, in which the mean grain size of the piezoelectric ceramic grains is smaller than that of the zirconia grains.

Abstract: A dielectric ceramic substrate or block contains, at least, two kinds of metal ions, and a dielectric constant in the substrate or block changes continuously or step by step as a function of position. The metal ions contained in the dielectric ceramic material are, at least, two kinds which are selected from the group consisting of Mg, Ca, Sr, Ba, Zn, Pb, Bi, Y, La, Ce, Nd, Sm, Gd, Er, Ti, Zr, Sn, Si and Mn, and the dielectric constant .di-elect cons. changes in the range of 7.ltoreq..di-elect cons..ltoreq.90. This dielectric ceramic material is used in a dielectric substrate for a stripline device, a dielectric substrate for a monolithic IC and a dielectric block for a polarizer. For example, the dielectric substrate for a stripline device, it is so formed that a dielectric constant at its center portion is constant, and becomes smaller step by step or continuously toward its ends.

Abstract: A process for producing powders of perovskite-type compounds which comprises mixing a metal alkoxide solution with a lead acetate solution to form a homogeneous, clear metal solution, adding an oxalic acid/n-propanol solution to this metal solution to form an easily filterable, free-flowing precursor powder and then calcining this powder. This process provides fine perovskite-phase powders with ferroelectric properties which are particularly useful in a variety of electronic applications.

Abstract: A capacitor comprising a ceramic dielectric material and at least two electrodes, said dielectric material essentially consisting of a dielectric composition with a doped barium-calcium-zirconium-titanate, said doped barium-calcium-zirconium-titanate having the compositionBa.sub.0.96 Ca.sub.0.04).sub.a ?Ti.sub.0.82-y Zr.sub.0.18 Mn.sub.y !O.sub.3 ,wherein 0.001.ltoreq.y.ltoreq.0.01, 1.00<a.ltoreq.1.02 and being doped with tungsten in a quantity r of 0.001 to 0.005 mol/formula unit and with at least one element A of the group formed by aluminium, gallium, yttrium, zinc, nickel and ytterbium in a quantity s of 0.001 to 0.005 mol/formula unit.

Abstract: A multilayer ceramic capacitor is made of a principal component (100 mol) represented by the compositional formula(1-.alpha.-.beta.) {BaO}.sub.m .multidot.TiO.sub.2 +.alpha.Re.sub.2 O.sub.3 +.beta.(Mn.sub.1-x-y Ni.sub.x CO.sub.y)O(where Re.sub.2 O.sub.3 is at least one of Y.sub.2 O.sub.3, Tb.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Ho.sub.2 O.sub.3, Er.sub.2 O.sub.3 and Yb.sub.2 O.sub.3 ; and .alpha., .beta., m, x, and y are 0.0025 .ltoreq..alpha..ltoreq.0.025, 0.0025 .ltoreq..beta..ltoreq.0.05, .beta./.alpha..ltoreq.4, 0 .ltoreq.x <1.0, 0 .ltoreq.y <1.0, 0 .ltoreq.x +y<1.0, and 1.000<m.ltoreq.1.035.), a secondary component (about 1-3.0 mol) of magnesium oxide (MgO), and Al.sub.2 O.sub.3 -MO-B.sub.2 O.sub.3 oxide glass (where MO is at least one of BaO, CaO, SrO, MgO, ZnO and MnO) in an amount of about 0.2-3.0 parts by weight for 100 parts by weight of the total amount of said principal component and secondary component.

Abstract: The present invention relates to a dielectric composition which can be densified at a temperature no higher than 1000.degree. C. and can provide ceramic products with a dielectric constant of 35 to 40 and a quality constant of 1000 to 5000 at 7 GHz. The dielectric composition comprises 0.1 to 50 wt % BaCuO.sub.2 --CuO and 99.9 to 50 wt % ZrO.sub.2 --SnO.sub.2 --TiO.sub.2. Multilayered microwave dielectric ceramic elements can be prepared by mixing the composition of the present invention with an organic solvent, a polymer binder and a plasticizer, forming a green sheet from the mixture by tape casting, screen-printing and laminating the green sheet, and then co-firing the ceramic laminate with a metal that is high in electrical conductivity such as Au, Cu and Ag.

Abstract: A thin film composite material comprises barium strontium titanate represented as Ba.sub.1-x Sr.sub.x TiO.sub.3 wherein x is greater than 0.0 but less than or equal to 0.75 and a magnesia-based compound such as MgZrO.sub.3, MgTiO.sub.3, MgAl.sub.2 O.sub.4 and mixtures thereof. The thin film ferroelectric composite is made using pulsed laser deposition and exhibits high tunability, low loss and a low dielectric constant.

Abstract: A ceramic multilayer capacitor includes a number of ceramic layers on the basis of a doped BaTiO.sub.3 and a number of electrode layers of Ni. The ceramic layers and the electrode layers are alternately stacked to form a multilayer structure which is provided with electric connections at both side faces. The composition of the main component of the doped BaTiO.sub.3 corresponds to the formula(Ba.sub.1-a-b Ca.sub.a Sr.sub.b) (Ti.sub.1-c-d-e-f Zr.sub.c Al.sub.d Mn.sub.e Nb.sub.f).sub.k O.sub.3+.delta.wherein:0.02.ltoreq.a.ltoreq.0.080.002.ltoreq.b.ltoreq.0.030.15.ltoreq.c.ltoreq.0.200.00<d.ltoreq.0.030.001.ltoreq.e.ltoreq.0.020.0005.ltoreq.f.ltoreq.0.011.001.ltoreq.k.ltoreq.1.005.

Abstract: A dielectric ceramic composition and a monolithic ceramic capacitor using same are provided. The dielectric ceramic composition includes a main component of barium titanate, scandium oxide, yttrium oxide, manganese oxide and nickel oxide, having the compositional formula:(1-.alpha.-.beta.){BaO}.sub.m.TiO.sub.2 +.alpha.M.sub.2 O.sub.3 +.beta.(Mn.sub.1-x Ni.sub.x)OwhereM.sub.2 O.sub.3 is at least one of Sc.sub.2 O.sub.3 and Y.sub.2 O.sub.3 ; 0.0025.ltoreq..alpha..ltoreq.0.020, 0.0025.ltoreq..beta..ltoreq.0.04, .beta./.alpha..ltoreq.4, 0.ltoreq.x<1.0, 1.000 <m.ltoreq.1.035, andmagnesium oxide in an amount of from about 0.5 to 3.0 mols in terms of MgO, and silicon oxide in an amount of from about 0.2 to 5.0 mols in terms of Si0.sub.2, relative to 100 mols of the main component.

Abstract: The present invention are methods for preparing hydrous titanium oxide spherules, hydrous titanium oxide gels such as gel slabs, films, capillary and electrophoresis gels, titanium monohydrogen phosphate spherules, hydrous titanium oxide spherules having suspendible particles homogeneously embedded within to form a composite sorbent, titanium monohydrogen phosphate spherules having suspendible particles of at least one different sorbent homogeneously embedded within to form a composite sorbent having a desired crystallinity, titanium oxide spherules in the form of anatase, brookite or rutile, titanium oxide spherules having suspendible particles homogeneously embedded within to form a composite, hydrous titanium oxide fiber materials, titanium oxide fiber materials, hydrous titanium oxide fiber materials having suspendible particles homogeneously embedded within to form a composite, titanium oxide fiber materials having suspendible particles homogeneously embedded within to form a composite and spherules of b

Abstract: A dielectric ceramic composition and a monolithic ceramic capacitor using the composition are provided. The dielectric ceramic composition includes: barium titanate; at least one rare earth oxide selected from terbium oxide, dysprosium oxide, holmium oxide, erbium oxide and ytterbium oxide; manganese oxide and nickel oxide; and magnesium oxide in an amount of from 0.5 to 3.0 mols in terms of MgO, and silicon oxide in an amount of from 0.2 to 5.0 mols in terms of SiO.sub.2, relative to 100 mols of the essential component having the following compositional formula:(1--.alpha.--.beta.){BaO}.sub.m TiO.sub.2 +.alpha.Re.sub.2 O.sub.3 +.beta.(Mn.sub.1-x Ni.sub.x)Owhere Re.sub.2 O.sub.3 is at least one selected from Tb.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Ho.sub.2 O.sub.3, Er.sub.2 O.sub.3 and Yb.sub.2 O.sub.3 ; and.alpha., .beta., m and x are as follows:0.0025.ltoreq..alpha..ltoreq.0.0200.0025.ltoreq..beta..ltoreq.0.04.beta./.alpha..ltoreq.40.ltoreq.x<1.01.000<m.ltoreq.1.035.

Abstract: A dielectric ceramic composition having (1) 100 parts by weight of a main component represented by compositional formula:{BaO}.sub.m .multidot.TiO.sub.2 +.alpha.Re.sub.2 O.sub.3 +.beta.MnOwherein Re.sub.2 O.sub.3 is at least one of Eu.sub.2 O.sub.3, Gd.sub.2 O.sub.3, Tb.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Ho.sub.2 O.sub.3, Er.sub.2 O.sub.3, Tm.sub.2 O.sub.3, and Yb.sub.2 O.sub.3 ; 0.0005.ltoreq..alpha..ltoreq.0.027; 0.001.ltoreq..beta..ltoreq.0.054; .beta./.alpha..ltoreq.5; and 1.000<m.ltoreq.1.035, and (2) about 0.2 to 3.0 parts by weight of an SiO.sub.2 --TiO.sub.2 --M.sup.1 -based oxide component (wherein M.sup.1 is at least one of BaO, CaO, SrO, MgO, ZnO, and MnO) or an Li.sub.2 O--(Si,Ti)O.sub.2 --M.sup.2 -based oxide component (wherein M.sup.2 is at least one of Al.sub.2 O.sub.3 and ZrO.sub.2) and a monolithic ceramic capacitor using the composition are disclosed. The monolithic ceramic capacitor has a dielectric constant of 3000 or higher and a CR product of 6000 M.OMEGA..multidot..mu.

Abstract: Disclosed is a monolithic ceramic capacitor comprising dielectric ceramic layers made from a ceramic composition, which comprises an essential component of (1-.alpha.-.beta.){BaO}.sub.m.TiO.sub.2 +.alpha.{(1-x)M.sub.2 O.sub.3 +xRe.sub.2 O.sub.3 }+.beta.(Mn.sub.1-y-z Ni.sub.y Co.sub.z)O (0.0025.ltoreq..alpha..ltoreq.0.025; 0.0025.ltoreq..beta..ltoreq.0.05; .beta./.alpha..ltoreq.4; 0<x.ltoreq.0.50; 0.ltoreq.y<1.0; 0.ltoreq.z<1.0; 0.ltoreq.y+z<1.0; 1.000<m.ltoreq.1.035) and from 0.5 to mols, relative to 100 mols of the essential component, of a side component MgO, and contains from 0.2 to 3.0 parts by weight, relative to 100 parts by weight of said components, of an oxide of the type of Li.sub.2 O--(Si,Ti)O.sub.2 --Al.sub.2 O.sub.3 --ZrO.sub.2. The capacitor can be small-sized while having large capacity. It can be produced even through baking in atmospheres having a low oxygen partial pressure without producing semiconductors.

Abstract: A capacitor apparatus includes, a) a substrate having a node; b) an inner capacitor plate in ohmic electrical connection with the substrate node; c) an outer capacitor plate; d) a capacitor dielectric layer interposed between inner and outer capacitor plates; e) an electrically conductive reaction barrier layer interposed between the substrate node and the inner capacitor plate, the reaction barrier layer having outer lateral edges which are recessed beneath the inner capacitor plate; and f) oxidation barrier blocks being received over the recessed outer lateral edges beneath the inner capacitor plate. Methods of forming such a capacitor are also disclosed.

Abstract: A dielectric ceramic composition being characterized in that the composition contains at least Ba and Ti as metal elements, and when the formula of the composition in accordance with the mole ratios of these elements is represented by BaO.xTiO.sub.2, the composition contains the main ingredient determined by x satisfying the relationship of 3.9.ltoreq.x.ltoreq.4.1, and 0.01 to 7 weight parts of Cu in terms of CuO, and, if necessary, 20 or less weight parts of Zn in terms of ZnO with respect to 100 weight parts of the main ingredient, whereby the dielectric coefficient can have a value in the range of 30 to 42, and Qf can have a value of 40000 GHz or more, the temperature coefficient .pi..sub.f of the resonance frequency can have a value in the range of -15 to +15 ppm/.degree.C., and the temperature drift .DELTA..pi..sub.f of the temperature coefficient .pi..sub.f of the resonance frequency can have a value in the range of -2 to +2 ppm/.degree.C.

Abstract: A capacitor having a ceramic dielectric and at least two electrodes, the ceramic dielectric being predominantly composed of a dielectric, ceramic composition having a main component of BaTiO.sub.3 and/or ?Ba.sub.1-y Sr.sub.y !Ti.sub.x O.sub.31 z, wherein 0.95.ltoreq.x.ltoreq.0.995, 0.ltoreq.y.ltoreq.0.04, z=2(1-x), and having at least an additive of the group formed by XMnO.sub.3, X.sub.2 MoO.sub.6, X.sub.2 WO.sub.6, X.sub.2 SiO.sub.5 +Mn.sub.2 SiO.sub.4 and Li.sub.2 SiO.sub.3 +Mn.sub.2 SiO.sub.4, and at least an additive of the group formed by Li.sub.2 SiO.sub.3, SiO.sub.2 and a mixture of 6 mol % Li.sub.2 O, 13 mol % BaO, 13 mol % SrO, 13 mol % MgO and 55 mol % SiO.sub.2, which is calcined at 800.degree. C., and, if necessary, an additive of the group formed by XInO.sub.3, XGaO.sub.3 and XAlO.sub.3, wherein X is one or more elements of the group formed by Y, Dy and Er, is characterized by a flat .DELTA.C/.DELTA.t curve and a stable dielectric behavior on exposure to temperature and voltage influences.

Abstract: A ferroelectric ceramic material, for the storage of information in electrostatic printing processes, which ferroelectric ceramic material has a coercive force of less than 200 V/mm. The ferroelectric ceramic material consists of a ceramic perovskitic mixed crystal, which contains one or more components from each of Groups 1 and 2, whereby Group 1 contains the components PbTiO.sub.3, BaTiO.sub.3, Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3 and Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 and Group 2 contains the components Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 and Pb(Mn.sub.1/2 Nb.sub.1/2)O.sub.3. The proportions of the components from the two groups in the mixed crystal are determined according to the following equation: ##EQU1## where X.sub.i is the mole fraction of the i-component, T.sub.ci is the Curie point of the i-component and T.sub.cM is the Curie point of the mixture between 50.degree. C. and 100.degree. C.

Abstract: The present invention provides a new and improved method of making barium titanate powder. The method includes the steps of providing a solution comprising oxalic acid and titanium oxychloride, maintaining the solution at a predetermined temperature, adding barium carbonate to the solution thereby precipitating barium titanyl oxalate, and calcining the barium titanyl oxalate so as to provide the barium titanate powder.

Abstract: The invention is directed to a capacitor dielectric thick film composition comprising, by weight %: (1) 32-98% BaTiO.sub.3, (2) 2-60% zinc barium borate and (3) 0-8% Bi.sub.2 O.sub.3.

Abstract: An improved high frequency dielectric ceramic composition and a fabrication method thereof, which is sintered at a low temperature ranging from 900.degree. to 1250.degree. C. without using a sintering aid and which has a fine structure and excellent dielectric characteristics, which includes of TiO.sub.2 .multidot.x(ZnO) where 0.04.ltoreq.x.ltoreq.1.0.

Abstract: The present invention provides a nonreducing dielectric ceramic including a sintered compact composed of a plurality of particles expressed by a maximum diameter of about 0.5 .mu.m and an average diameter of about 0.1 to 0.3 .mu.m, each of the plurality of particles having a uniform composition and a uniform crystal system, and individual particles having the same composition and crystal system. A compact monolithic electronic part with high-reliability can be realized by using such ceramic.

Abstract: An electrochemical process for producing unsaturated hydrocarbon compounds from unsaturated hydrocarbon compounds and for extracting oxygen from a gas containing N.sub.2 O, NO, NO.sub.2, SO.sub.2, or SO.sub.3 is described. The process is characterized by the use of mixed metal oxide materials having a perovskite structure represented by the formula:A.sub.s A'.sub.t B.sub.u B'.sub.v B".sub.w O.sub.xwherein A represents a lanthanide or Y, or a mixture thereof; A' represents an alkaline earth metal or a mixture thereof; B represents Fe; B' represents Cr or Ti, or a mixture thereof; and B" represents Mn, Co, V, Ni, or Cu, or a mixture thereof.

Abstract: A semiconducting ceramic whose rush breakdown voltage is high and which hardly cracks during lamination is provided. In the semiconducting ceramic having a positive resistance-temperature characteristic, the ratio of intra-granular resistance of the crystal grains and inter-granular resistance between crystal grains which together determine the value of resistance of the semiconducting ceramic is set so that the intra-granular resistance is less than about 20% of the value of resistance of the semiconducting ceramic (not including 0%).

Abstract: The present invention provides dielectric ceramics with less variation of temperature coefficient at a resonant frequency due to heating history during the sintering of ZrTiO.sub.4 and ZrO.sub.2 --SnO.sub.2 --TiO.sub.2 ceramics, and having a high unloaded Q value and a high dielectric constant, and a temperature coefficient at a resonant frequency which is widely variable as desired, and dielectric resonators using the dielectric ceramics which have a high unloaded Q value and a strong electrode layer. The main components of the dielectric ceramics may be expressed by the formula: xZrO.sub.2 --yTiO.sub.2 --zA.sub.(1+u)/3 B.sub.(2-u)/3 O.sub.2 wherein A denotes at least one component selected from the group (A) consisting of Mg, Co, Zn, Ni and Mn, B denotes at least one component selected from the group (B) consisting of Nb and Ta, and x, y, z and u (x, y and z are molar fractions and u is a value within the range from 0 to 1.90) have the relation of x+y+z=1.0, 0.10.ltoreq.x.ltoreq.0.60, 0.20.ltoreq.y.ltoreq.

Abstract: A semiconducting ceramic composition having a positive temperature coefficient and a process for production thereof. The semiconducting ceramic composition comprises a barium titanate semiconducting ceramic composition containing silicon oxide and manganese, the semiconducting ceramic composition further comprising sodium in an amount of from 0.0005 to 0.02 wt % based on the amount of the barium titanate semiconducting ceramic composition.

Abstract: A multilayer ceramic part including dielectric ceramic layers and internal conductor layers is prepared by forming dielectric ceramic layers from an oxide system dielectric ceramic material having a sintering completion temperature between the melting point and the boiling point of the internal conductor. A pattern of internal conductor is formed on dielectric ceramic layers. The dielectric ceramic layers are placed one on another so as to sandwich the internal conductor pattern therebetween. The laminate is fired at or above the melting point of the internal conductor, optionally in an atmosphere having a controlled oxygen partial pressure. Since the dielectric ceramic material has an improved dielectric constant and dielectric loss and the internal conductor is densified and improved in surface property, the part is improved in resonator Q value and other properties.

Abstract: A ceramic powder mixture is made by combining from 96 to 98 mole percent of precursors of a stoichiometric barium zirconate titanate (BZT) wherein zirconium amounts to from 13.5 to 15.0 mole percent, and adding from 0.5 to 1.5 mole percent niobium or lanthanum, from 1.2 to 2.6 weight percent of a cadmium silicate sintering flux, essentially no lead, and from zero to 2 mole % of an alkaline earth metal to obtain in the powder mixture a ratio (A/B) of the large cations (A) to the small cations (B) in the range from 1.024 to 1.035. The mixture is calcined to obtain a powder comprised of agglomerates of essentially identical composition within the ranges given above. This powder of agglomerates may then be formed into a compact body that is sintered and fired to maturity at 1100.degree. C. to produce a mature dielectric ceramic body meeting the Y5V standard and having a dielectric constant greater than 10,000 at the Curie temperature.

Abstract: The present invention includes the following three types of piezoelectric porcelains. (1) In a piezoelectric porcelain having a composition of aPb[Mg.sub.1-X Ni.sub.X).sub.1/3 (Nb.sub.1-Y Ta.sub.Y).sub.2/3 ]O.sub.3 -bPbTiO.sub.3 -cPbZrO.sub.3, the coefficients a, b and c (mol %) and the substitution rate X satisfy all the following conditions; 15.ltoreq.a.ltoreq.45, 32.ltoreq.b.ltoreq.45, 10.ltoreq.c.ltoreq.50 and 0.1.ltoreq.X.ltoreq.0.9. (2) In a piezoelectric porcelain having a composition of aPb[Mg.sub.1-X Ni.sub.X).sub.1/3 (Nb.sub.1-Y Ta.sub.Y).sub.2/3 ]O.sub.3 -bPbTiO.sub.3 -cPbZrO.sub.3, the coefficients a, b and c (mol %) and the substitution rates X and Y satisfy all the following conditions; 15.ltoreq.a.ltoreq.45, 32.ltoreq.b.ltoreq.45, 10.ltoreq.c.ltoreq.50, 0.1.ltoreq.X.ltoreq.0.9, 0.1.ltoreq.Y.ltoreq.0.9 and Y-X.gtoreq.0.05. (3) In a piezoelectric porcelain having a composition of aPb[Mg.sub.1-X Ni.sub.X).sub.1/3 (Nb.sub.1-Y Ta.sub.Y).sub.2/3 ]O.sub.3 -bPbTiO.sub.3 -cPbZrO.sub.