High Temperature (tc Greater Than 30 K) Superconductor Material (i.e., Element, Compound, Or Composition), Per Se Patents (Class 505/100)
  • Patent number: 10804010
    Abstract: A superconductor wire having a first HTS layer with a first cap layer in direct contact with a first surface of the first HTS layer and a second cap layer in direct contact with a second surface of the first HTS layer. There is a first lamination layer affixed to the first cap layer and a stabilizer layer having a first surface affixed to the second cap layer. There is a second HTS layer and a third cap layer in direct contact with a first surface of the second HTS layer and a fourth cap layer in direct contact with a second surface of the second HTS layer. There is a second lamination layer affixed to the fourth cap layer. The second surface of the stabilizer layer is affixed to the third cap layer and there are first and second fillets disposed along a edge of the laminated superconductor.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: October 13, 2020
    Inventor: Martin W. Rupich
  • Patent number: 10781108
    Abstract: A two-dimensional hydrogen boride-containing sheet of the present invention has a two-dimensional network that consists of (HB)n (n?4).
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: September 22, 2020
    Assignees: University of Tsukuba, Tokyo Institute of Technology
    Inventors: Takahiro Kondo, Junji Nakamura, Hiroaki Nishino, Asahi Fujino, Tomohiro Fujimori, Hideo Hosono, Masahiro Miyauchi
  • Patent number: 10784433
    Abstract: A transistor. In some embodiments, the transistor includes a first superconducting source-drain, a second superconducting source-drain, a graphene channel including at least a portion of a graphene sheet, and a conductive gate. The first superconducting source-drain, the second superconducting source-drain, and the graphene channel together form a Josephson junction having a critical current. The graphene channel forms a current path between the first superconducting source-drain and the second superconducting source-drain. The conductive gate is configured, upon application of a electric field across the conductive gate and the graphene channel by applying a voltage, to modify the critical current.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: September 22, 2020
    Assignee: Raytheon BBN Technologies Corp
    Inventors: Kin Chung Fong, Thomas A. Ohki
  • Patent number: 10665367
    Abstract: An oxide superconducting wire includes an oriented metal substrate, an intermediate layer formed on the oriented metal substrate, and an oxide superconducting layer formed on the intermediate layer. The oriented metal substrate has an in-plane orientation ?? of 7° or less. The intermediate layer is formed of a single layer.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: May 26, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Genki Honda, Tatsuoki Nagaishi, Masaya Konishi, Kotaro Ohki, Takashi Yamaguchi, Tatsuhiko Yoshihara
  • Patent number: 10629767
    Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: April 21, 2020
    Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATION
    Inventors: Narsingh B. Singh, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
  • Patent number: 10586918
    Abstract: A magnetic field effect transconductor device (M-FET) capable of carrying a modulated current when receiving an external magnetic field includes at least a ferromagnetic layer and a non-ferromagnetic layer disposed on the ferromagnetic layer; the non-ferromagnetic layer has a first skin depth of the current and a first thickness smaller than the first skin depth; and the ferromagnetic layer has a second skin depth of the current and a second thickness smaller than the second skin depth. Applying an external DC magnetic field along the longitudinal axis of the device and an AC EM wave propagating in the same direction as the DC field, the M-FET demonstrates frequency dependent current switching device. A method for making the transconductor includes depositing a photoresist over transconductors and patterning the photoresist, or depositing transconductors over a patterned photoresist and performing a lift off process.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: March 10, 2020
    Assignee: University of Florida Research Foundation, Incorporated
    Inventors: Yong Kyu Yoon, Arian Rahimi
  • Patent number: 10562278
    Abstract: An article of manufacture includes a first graphene layer, a second graphene layer over the first graphene layer, the second graphene layer oriented at a first interlayer twist angle with respect to the first graphene layer and bonded by interlayer covalent bonds to the first graphene layer, and a third graphene layer over the second graphene layer, the third graphene layer oriented at a second interlayer twist angle with respect to the second graphene layer and bonded by interlayer covalent bonds to the second graphene layer. A multi-layer graphene article includes at least three graphene layers, each graphene layer being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: February 18, 2020
    Assignees: University of Massachusetts, Universidade Federal do Rio Grande do SuI-UFRGS, The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Christos Dimitrakopoulos, Dimitrios Maroudas, Andre R. Muniz, D. Kurt Gaskill
  • Patent number: 10477660
    Abstract: A complex electronic component includes: an element part and an electrostatic discharge (ESD) protection part disposed on the element part. The ESD protection part includes: first and second discharging electrodes having a gap disposed therebetween; a blocking layer disposed between the first and second discharging electrodes; and a discharging layer which is disposed to cover an upper portion of the blocking layer and is in contact with top surfaces of the first and second discharging electrodes.
    Type: Grant
    Filed: March 23, 2017
    Date of Patent: November 12, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sang Moon Lee, Sung Jin Park, Ha Yoon Song, Sung Ryong Ma
  • Patent number: 10386229
    Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating photodetector circuitry. In one aspect, a photon detector system includes: (1) a first superconducting wire having a first threshold superconducting current; (2) a second superconducting wire having a second threshold superconducting current; (3) a resistor coupled to the first wire and the second wire; (4) current source(s) coupled to the first wire and configured to supply a current that is below the second threshold current; and (3) a second circuit coupled to the second wire. In response to receiving light at the first wire, the first wire transitions from a superconducting state to a non-superconducting state. In response to receiving light at the second wire while the first wire is in the non-superconducting state, the second wire transitions to a non-superconducting state, redirecting the first current to the second circuit.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: August 20, 2019
    Assignee: PSIQUANTUM CORP.
    Inventors: Faraz Najafi, Syrus Ziai
  • Patent number: 10256106
    Abstract: A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: April 9, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Josephine B. Chang, Douglas T. McClure, III
  • Patent number: 10186651
    Abstract: An oxide superconducting wire of the invention includes a substrate, an intermediate layer which is laminated on a main surface of the substrate, has one or more layers having an orientation, and has one or more non-orientation regions extending in a longitudinal direction of the wire, and an oxide superconducting layer which is laminated on the intermediate layer, has a crystal orientation controlled by the intermediate layer, and has non-orientation regions located on the non-orientation regions in the intermediate layer and is formed into multiple filaments.
    Type: Grant
    Filed: May 7, 2015
    Date of Patent: January 22, 2019
    Assignee: FUJIKURA LTD.
    Inventor: Chihaya Kurihara
  • Patent number: 10128026
    Abstract: A superconducting wire having improved electrical and physical properties.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: November 13, 2018
    Assignee: LS CABLE & SYSTEM LTD.
    Inventors: Jin Bae Na, Young Woong Kim, Chang Youl Choi, Cheol Hwi Ryu, Seok Ju Lee
  • Patent number: 10079092
    Abstract: High-temperature superconducting (HTS) devices and methods are disclosed. An HTS cable subassembly has a rectangular shaped cross section. The subassembly includes a stack of tapes formed of a superconducting material, and a cable subassembly wrapper wrapped around the stack of tapes. The tapes in the stack are slidably arranged in a parallel fashion. A cable assembly is formed of a cable assembly wrapper formed of a second non-superconducting material disposed around an n×m array of cable subassemblies. Within a cable assembly, a first cable subassembly of the array of subassemblies is oriented substantially perpendicular to a second cable subassembly with regard to the plurality of tapes. A compound-cable assembly is formed by joining two or more cable assemblies. A high-temperature superconducting magnet is formed of a solenoidal magnet as well as dipole and quadrupole magnets wound of a cable subassembly, a cable assembly, and/or a compound cable assembly.
    Type: Grant
    Filed: November 25, 2015
    Date of Patent: September 18, 2018
    Assignee: Massachusetts Institute of Technology
    Inventors: Yukikazu Iwasa, Juan Bascuñán, Seungyong Hahn
  • Patent number: 10032637
    Abstract: A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: July 24, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Josephine B. Chang, Douglas T. McClure, III
  • Patent number: 9929978
    Abstract: A superconducting cross-bar switch system comprises a first input port coupled to a first output port through a first variable inductance coupling element, and a second output port through a third variable inductance coupling element, and a second input port coupled to the first output port through a second variable inductance coupling element, and the second output port through a fourth variable inductance coupling element. A switch controller controls the setting of the cross-bar switch between a Bar state and a Cross state by changing the variable inductance coupling elements between opposing inductance states. This allows for selective routing of signals between the first input port to the first output port and the second input port to the second output port in the Bar state, and the first input port to the second output port and the second input port to the first output port in the Cross state.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: March 27, 2018
    Assignee: Northrop Grumman Systems Corporation
    Inventor: Ofer Naaman
  • Patent number: 9705063
    Abstract: A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: July 11, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Josephine B. Chang, Douglas T. McClure, III
  • Patent number: 9673417
    Abstract: An organic light-emitting diode (OLED) display panel includes an organic layer positioned on a first electrode and a multilayer thin film positioned on the organic layer. The multilayer thin film is formed of a stack of graphene. The multilayer thin film has an interlayer bonding between two or more upper layers thereof.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: June 6, 2017
    Assignee: LG Display Co., Ltd.
    Inventors: DongChin Lee, Chul-Hong Kim, Sunghee Cho, Yongbin Jeong
  • Patent number: 9564259
    Abstract: A superconductor wire includes: a superconducting laminate that includes: a substrate and an intermediate layer; a superconductor layer, and a metal stabilization layer which are laminated on the substrate; and an insulation coating layer that covers an outer surface of the superconducting laminate and is formed by baking a resin material. Further, a maximum height Rz of at least a part of the outer surface of the superconducting laminate covered with the insulation coating layer is 890 nm or less.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: February 7, 2017
    Assignee: FUJIKURA, LTD.
    Inventor: Masanori Daibo
  • Patent number: 9515247
    Abstract: A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: December 6, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Josephine B. Chang, Douglas T. McClure, III
  • Patent number: 9502159
    Abstract: A superconducting wire connection structure comprises a first superconducting wire and a second superconducting wire, ends of which are arranged across from each other, and a third superconducting wire which spans and connects the first superconducting wire and the second superconducting wire along a longitudinal direction of the first superconducting wire and the second superconducting wire. Each of the first superconducting wire, the second superconducting wire and the third superconducting wire is a tape-shaped superconducting wire which includes a substrate laminated with at least a superconductive layer. The third wire is narrower in at least one portion than the first superconducting wire and the second superconducting wire.
    Type: Grant
    Filed: February 6, 2013
    Date of Patent: November 22, 2016
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Takaharu Mitsuhashi, Masashi Yagi
  • Patent number: 9434850
    Abstract: A printed material having excellent smoothness is provided even when a resin ink is used. An ink jet printing method uses an ink jet printing apparatus 1 including a head 5, and a printing platen 2 for heating a medium 100 from a back side of a surface of the medium 100, wherein the ink contains a solvent, a colorant and a resin, in which the resin is emulsionized or suspended. The ink jet printing method includes a drying step in which the ink is dried by the printing platen 2 after the ink is landed onto the medium 100.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: September 6, 2016
    Assignee: MIMAKI ENGINEERING CO., LTD.
    Inventors: Akira Takeuchi, Akihiro Tsukada, Takashi Namiki
  • Patent number: 9224937
    Abstract: An MgB2 superconducting wire excellent in critical current density property is supplied by using a crystalline boron powder which is low in costs and easy to obtain. For the wire, a precursor of the MgB2 superconducting wire is used, the precursor having a linear structure including a core region containing a magnesium powder and a boron powder, and a sheath region formed of a metal covering an outer circumferential portion of the core region. The boron powder is crystalline, and has a volume-mean particle size of 2 ?m or less.
    Type: Grant
    Filed: January 23, 2013
    Date of Patent: December 29, 2015
    Assignees: Hitachi, Ltd., The University of Tokyo
    Inventors: Motomune Kodama, Kazuhide Tanaka, Junichi Shimoyama, Akiyasu Yamamoto
  • Patent number: 9159897
    Abstract: A superconducting structure (1) has a plurality of linked band-segments (2), with each linked band-segment (2) having a substrate (3) and a superconducting layer deposited onto it (4). The linked band-segments (2) are joined to one another by superconducting layers (4) that face each other. Each linked band-segment (2) is joined to two additional band-segments (7a, 7b) in such a way that the superconducting layers (4) of the two additional band-segments (7a, 7b) and of the linked band-segment (2) face each other. The additional band-segments (7a, 7b) together substantially overlap the total length (L) of the linked band-segment (2). This provides for a superconducting structure, which exhibits high superconductivity and which is very suitable for long distances.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: October 13, 2015
    Assignee: Bruker HTS GmbH
    Inventors: Klaus Schlenga, Alexander Usoskin
  • Patent number: 9093199
    Abstract: A method for making superconducting wire is provided. A number of superconducting preforms is formed on a carrier. A carbon nanotube layer is placed spaced from and opposite to the carrier. The superconducting preforms are moved from the carrier onto the carbon nanotube layer by applying an electric field between the carbon nanotube layer and the carrier. A composite wire is made by treating the carbon nanotube layer with the superconducting preforms thereon. Finally, the composite wire is sintered.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: July 28, 2015
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xiao-Yang Lin, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20150105261
    Abstract: An oxide superconducting thin film wherein nanoparticles functioning as flux pins are dispersed in the film is provided. The oxide superconducting thin film wherein the nanoparticles in the oxide superconducting thin film have a dispersing density of 1020 particles/m3 to 1024 particles/m3 is provided. The oxide superconducting thin film wherein the nanoparticles have a particle diameter of 5 nm to 100 nm is provided. A method of manufacturing an oxide superconducting thin film wherein a predetermined amount of a solution obtained by dissolving nanoparticles functioning as flux pins in a solvent is added to a solution obtained by dissolving an organometallic compound in a solvent to prepare a source material solution for an oxide superconducting thin film, and the source material solution is used to manufacture the oxide superconducting thin film through a coating-pyrolysis process is provided.
    Type: Application
    Filed: May 31, 2012
    Publication date: April 16, 2015
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Tatsuoki Nagaishi, Genki Honda, Iwao Yamaguchi, Takaaki Manabe, Takeshi Hikata, Hiroaki Matsui, Wakichi Kondo, Hirofumi Yamasaki, Toshiya Kumagai
  • Patent number: 8926868
    Abstract: A superconducting article comprises a substrate, a buffer layer overlying the substrate, and a high-temperature superconducting (HTS) layer overlying the buffer layer. The HTS layer includes a plurality of nanorods. A method of forming a superconducting article comprises providing a substrate, depositing a buffer layer overlying the substrate; forming a nanodot array overlying the buffer layer; depositing an array of nanorods nucleated on the nanodot array; and depositing a high-temperature superconducting (HTS) layer around the array of nanorods and overlying the buffer layer.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: January 6, 2015
    Assignees: University of Houston System, Superpower, Inc.
    Inventors: Venkat Selvamanickam, Goran Majkic, Maxim Martchevskii
  • Patent number: 8918152
    Abstract: Disclosed are devices comprising multiple nanogaps having a separation of less than about 5 nm. Also disclosed are methods for fabricating these devices.
    Type: Grant
    Filed: February 13, 2008
    Date of Patent: December 23, 2014
    Assignee: The Trustees Of The University Of Pennsylvania
    Inventors: Douglas R. Strachan, Danvers E. Johnston, Beth S. Guiton, Peter K. Davies, Dawn A. Bonnell, Alan T. Johnson, Jr.
  • Publication number: 20140349854
    Abstract: Provided is an iron-based superconducting material including an iron-based superconductor having a crystal structure of ThCr2Si2, and nanoparticles which are expressed by BaXO3 (X represents one, two, or more kinds of elements selected from a group consisting of Zr, Sn, Hf, and Ti) and have a particle size of 30 nm or less. The nanoparticles are dispersed in a volume density of 1×1021m?3 or more.
    Type: Application
    Filed: February 28, 2014
    Publication date: November 27, 2014
    Applicant: International Superconductivity Technology Center
    Inventors: Masashi Miura, Seiji Adachi, Keiichi Tanabe, Hideo Hosono
  • Patent number: 8852460
    Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.
    Type: Grant
    Filed: March 18, 2009
    Date of Patent: October 7, 2014
    Assignees: Air Liquide Electronics U.S. LP, American Air Liquide, Inc.
    Inventors: Olivier Letessier, Christian Dussarrat, Benjamin J. Feist, Vincent M. Omarjee
  • Patent number: 8716187
    Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: May 6, 2014
    Assignee: Superconductor Technologies, Inc.
    Inventors: Brian Moeckly, Viktor Gliantsev, Shing-jen (Luke) Peng, Balam Willemsen
  • Publication number: 20140113828
    Abstract: Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.
    Type: Application
    Filed: March 30, 2012
    Publication date: April 24, 2014
    Applicant: AMBATURE INC.
    Inventors: Douglas J. Gilbert, Y. Eugene Shteyn, Michael J. Smith, Joel Patrick Hanna, Paul Greenland, Brian J. Coppa, Forrest J. North
  • Patent number: 8633472
    Abstract: Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: January 21, 2014
    Assignee: Los Alamos National Security, LLC
    Inventors: Lev Boulaevskii, David M. Feldmann, Quanxi Jia, Alexei Koshelev, Nathan A. Moody
  • Patent number: 8562859
    Abstract: A voltage nonlinear resistor is made of a sintered body that mainly includes zinc oxide grains, spinel grains including zinc and antimony as main ingredients, and a bismuth oxide phase, in which the bismuth oxide phase includes at least one of alkali metals selected from the group of potassium and sodium at a ratio in the range of 0.036 at % or higher and 0.176 at % or lower. The voltage nonlinear resistor has good voltage nonlinearity and loading service life characteristics, and can be used for a lightning arrester.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: October 22, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomoaki Kato, Iwao Kawamata, Yoshio Takada
  • Patent number: 8450246
    Abstract: Method of making a low resistivity electrical connection between an electrical conductor and an iron pnictide superconductor involves connecting the electrical conductor and superconductor using a tin or tin-based material therebetween, such as using a tin or tin-based solder. The superconductor can be based on doped AFe2As2, where A can be Ca, Sr, Ba, Eu or combinations thereof for purposes of illustration only.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: May 28, 2013
    Assignee: Iowa State University Research Foundation, Inc.
    Inventors: Makariy Tanatar, Ruslan Prozorov, Ni Ni, Sergey Bud'ko, Paul Canfield
  • Publication number: 20130053249
    Abstract: The present invention refers to obtaining a solution of metal-organic precursors with a maximum fluorine content of 10% using the solution previously described in patent ES2259919 B1 as the starting point. This modification enables carrying out the thermal treatment of superconducting decomposition layers (pyrolysis) and crystal growth in a single stage. In addition, the low fluorine content reduces the risks of toxicity and corrosion.
    Type: Application
    Filed: December 3, 2010
    Publication date: February 28, 2013
    Applicant: CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
    Inventors: Susana Ricart Miró, Xavier Palmer Paricio, Alberto Pomar Barbeito, Teresa Puig Molina, Xavier Obradors Berenguer, Anna Palau Masoliver
  • Publication number: 20120251521
    Abstract: The present invention is a solution or colloid of fullerene, SWNTs, or graphene in cyclic terpenes, lactones, terpene-alcohol, fatty-acid alcohols, and lactones following ultrasonication and ultracentrifugation processing, for oil-energy, biological, electrical-thermal applications. The compositions are useful as fuel/oil/grease/gels (synthetic included), oil/fuel/additives/propellants, identification dyes, and heat-transfer fluids. Other functions are phase-change fluids for solar energy power plants, antifreeze, electronic dyes, electrolytic fluid/solvent, electrically-thermally conductive material for electrochemical, dielectric, filler/adhesive for semiconductor, eletro-optical, and liquid crystal substrates/coatings for touch sensitive transmissive or reflective displays. When combined with gelatin the formulations can function as dichroic-optical coatings for thin-films/waveguides/holograms.
    Type: Application
    Filed: April 2, 2011
    Publication date: October 4, 2012
    Inventors: Bertha Rostro, Mehdie Kohanloo
  • Publication number: 20120172230
    Abstract: The present invention provides a Bi2223 oxide superconductor composed of Bi, Pb, Sr, Ln, Ca, Cu, and O, wherein the Ln is at least one selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and the composition ratio of Sr to Ln is a composition ratio described below. The Bi2223 oxide conductor has a high critical current density in a magnetic field at low temperature and is capable of maintaining a high critical current density in a self magnetic field even at 77 K. Sr:Ln=(1?x):x (wherein 0.002?x?0.015) Also, the present invention provides a method for producing the Bi2223 oxide superconductor, the method including a step of ionizing a material containing elements, which constitute the Bi2223 oxide superconductor, in a solution; and a step of removing a solvent and causing a thermal decomposition reaction by spraying the solution into a high-temperature atmosphere to produce a powder containing atoms constituting the oxide superconductor.
    Type: Application
    Filed: August 5, 2010
    Publication date: July 5, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kazuaki Tatamidani, Naoki Ayai, Jun-ichi Shimoyama
  • Publication number: 20120172231
    Abstract: A composite superconductor and methods of providing same include a superconductor powder dispersed within a conductive polymer matrix.
    Type: Application
    Filed: December 31, 2010
    Publication date: July 5, 2012
    Inventors: Carlton Anthony Taft, Gerson Silva Paiva, Nelson Cesar Chaves Pinto Furtado
  • Publication number: 20120172232
    Abstract: The present invention relates to a nanorod-containing precursor powder, a nanorod-containing superconductor bulk and a method for manufacturing the same. The method for manufacturing a nanorod-containing precursor powder includes the following steps: providing a precursor powder; and forming a plurality of nanorods on particle surfaces of the precursor powder. Accordingly, the present invention can significantly enhance critical current density and pinning force.
    Type: Application
    Filed: July 6, 2011
    Publication date: July 5, 2012
    Applicant: National Cheng Kung University
    Inventors: In-Gann Chen, Chun-Chih Wang, Shih-Hsun Huang
  • Publication number: 20120142536
    Abstract: The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.
    Type: Application
    Filed: June 8, 2011
    Publication date: June 7, 2012
    Applicant: SOLAR-TECTIC, LLC
    Inventors: Praveen Chaudhari, Karin Chaudhari, Ashok Chaudhari, Pia Chaudhari
  • Patent number: 8148300
    Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: April 3, 2012
    Assignees: Japan Science and Technology Agency, Central Research Institute of Electric Power Industry
    Inventors: Kaname Matsumoto, Masashi Mukaida, Yutaka Yoshida, Ataru Ichinose, Shigeru Horii
  • Patent number: 8142881
    Abstract: A superconductor for mitigating the effects of local current disruptions in a superconducting filament. The superconductor comprises superconducting filaments covered by a medium in electrical communication with the filaments. The covering medium has anisotropic conductivity, the conductivity in a direction substantially aligned with the filaments being selected to stabilize the superconductor near the critical temperature, and the conductivity of the covering in a direction substantially perpendicular to the filaments being selected to permit controlled current sharing between the filaments, especially when a filament is compromised, while simultaneously limiting alternating current (ac) losses. In various embodiments, the covering comprises a wire mesh having longitudinal wires made of a first material having a first conductivity, and transverse wires made of a second material having a second conductivity, different from the first conductivity.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: March 27, 2012
    Assignee: American Superconductor Corporation
    Inventor: Cornelis Leo Hans Thieme
  • Publication number: 20120035055
    Abstract: Problem: To provide an REBCO superconductor which has electromagnetic properties of an extremely small magnetization in a DC magnetic field or an extremely small pinning loss in a fluctuating magnetic field and thereby enable production of a REBCO superconducting wire with an extremely small magnetization and pinning loss. Solution to Problem: A RE1Ba2Cu3O7-z superconductor characterized by having a magnetization-zero-region on its magnetization curve, wherein in the magnetization-zero-region a rate of change of magnetization remains at about zero near zero magnetization, the magnetization curve is formed when an external magnetic field turns from an increase to a decrease or from a decrease to an increase, and RE is one or more of Y, Gd, Nd, Sm, Eu, Yb, Pr, and Ho.
    Type: Application
    Filed: June 7, 2011
    Publication date: February 9, 2012
    Inventors: Masataka IWAKUMA, Akira Ibi, Teruo Izumi, Yuh Shiohara
  • Patent number: 8110424
    Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: February 7, 2012
    Assignee: Samsung LED Co., Ltd.
    Inventors: Jong In Yang, Sang Bum Lee, Sang Yeob Song, Si Hyuk Lee, Tae Hyung Kim
  • Patent number: 8092721
    Abstract: Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: January 10, 2012
    Assignees: L'Air Liquide Societe Anonyme pour l'Etude Et l'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
    Inventors: Satoko Gatineau, Julien Gatineau, Christian Dussarrat
  • Publication number: 20110319268
    Abstract: A seed crystal for the fabrication of a superconductor is grown from a rare-earth oxide having the basic formula XwZtBaxCuyOz, X comprising at least one rare-earth element and Z being a dopant which raises the peritectic decomposition temperature (Tp) of the oxide. In a preferred embodiment, the dopant is Mg. Use to of this rare-earth oxide material for seed crystals increases the temperature at which cold-seeding can be performed and thus enables the growth of a wider range of bulk superconductor materials by this process.
    Type: Application
    Filed: June 30, 2011
    Publication date: December 29, 2011
    Applicant: Cambridge Enterprise Limited
    Inventors: David Anthony Cardwell, Nadendla Hari Babu, Yun-Hua Shi
  • Publication number: 20110301038
    Abstract: A system for cooling superconducting materials used for magnetization of magnets disposed within a cylindrical structure, the system including a first tubing system for allowing a cooling gas to interact with a high-field strength superconducting material to thermosiphon-cool the high-field strength superconducting material, a second tubing system for allowing a cooling gas to interact with a low-field strength superconducting material to thermosiphon-cool the low-field strength superconducting material, and a cooling gas in liquefied form configured to flow through the first tubing system and/or the second tubing system. An outlet of the first tubing system and an outlet of the second tubing system are located at a same location on a surface of the cylindrical structure. A method for cool superconducting materials used for magnetization of magnets disposed within a cylindrical structure is also disclosed.
    Type: Application
    Filed: December 23, 2010
    Publication date: December 8, 2011
    Inventors: Ernst Wolfgang Stautner, Kiruba Sivasubramaniam Haran, James Rochford
  • Publication number: 20110301039
    Abstract: Preparation and deposition of supercooled, electron-doped, water-cluster clathrate nanoparticles in confined geometries and on substrates from proprietary nanoemulsions is described. The compositions can yield high-Tc superconductors, e.g., in the vicinity of ?43 deg C., useful for SQUID devices in electronic and magnetic application. In certain embodiments, the water-cluster clathrates are formed in nanoemulsions.
    Type: Application
    Filed: December 29, 2009
    Publication date: December 8, 2011
    Applicant: HYDROELECTRON VENTURES, INC.
    Inventors: Keith Johnson, Matthew Price-Gallagher
  • Publication number: 20110269629
    Abstract: Partially or fully saturated doped graphene materials are found to be superconducting. The saturation is with hydrogen or halogen. Doping is performed by substitution of carbon atoms or by applying an electric field. Diamond nano-rods are also found to be superconducting. These materials can be used in electronic devices having a gate.
    Type: Application
    Filed: February 2, 2011
    Publication date: November 3, 2011
    Applicant: ISIS INNOVATION LIMITED
    Inventors: Feliciano Giustino, Andrea C. Ferrari, Gianluca Savini
  • Publication number: 20110223480
    Abstract: The present invention refers to a nanostructured material comprising nanoparticles bound to its surface. The nanostructured material comprises nanoparticles which are bound to the surface, wherein the nanoparticles have a maximal dimension of about 20 nm. Furthermore, the nanostructured material comprises pores having a maximal dimension of between about 2 nm to about 5 ?m. The nanoparticles bound on the surface of the nanostructured material are noble metal nanoparticles or metal oxide nanoparticles or mixtures thereof. The present invention also refers to a method of their manufacture and the use of these materials as electrode material.
    Type: Application
    Filed: September 7, 2009
    Publication date: September 15, 2011
    Inventors: Tsyh Ying Grace Wee, Nopphawan Phonthammachai, Madhavi Srinivasan, Subodh Mhaisalkar, Yin Chiang Freddy Boey