Abstract: A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

Abstract: This invention provides a rare earth-type tape-shaped oxide superconductor having excellent mechanical strength and superconducting properties and a composite substrate using for the same. Non-oriented and non-magnetic Ni-9 at % W alloy tapes (11, 21) were bonded onto both sides of a non-oriented and non-magnetic hastelloy tape (100) by a normal temperature bonding process, and an Ni-3 at % W alloy tape (12) having a cubic texture was bonded onto the surface of the tape (11) by a normal temperature bonding process. Thereafter, the heat-treatment was given in a reducing atmosphere and a bonding layer (50a) etc. was formed on the adhesive interface of each layer. Next, a (Ce, Gd)O2 intermediate layer (13) and a Ce2Zr2O7 intermediate layer (14) by an MOD process, a CeO2 intermediate layer (15), a YBCO superconducting film (16) by a TFA-MOD method, and a silver stabilization layer (17) were stacked sequentially on the surface of the tape (12). A critical current value (Ic) of this superconductor showed 150 A.

Abstract: A coated conductor is provided with improved electrical connection between the conductive layers such as the high temperature superconductor layer and a metal protection layer applied onto the high temperature superconductor layer and the substrate. A method includes obtaining such electrical connection, in particular, creating a coated conductor wherein the substrate is a core covered with the layers all around its periphery.

Abstract: Superconducting rf is limited by a wide range of failure mechanisms inherent in the typical manufacture methods. This invention provides a method for fabricating superconducting rf structures comprising coating the structures with single atomic-layer thick films of alternating chemical composition. Also provided is a cavity defining the invented laminate structure.

Abstract: A superconducting thin film having excellent critical current characteristics is provided. A substrate for a superconducting thin film includes a substrate body (10A) having a main surface (10B) in which the root mean square slope R?q of a roughness curve is 0.4 or less.

Abstract: An effect of suppressing diffusion of metal elements from a substrate is high and orientation of a forcibly-oriented layer is improved. A base material (2) for a superconducting thin film includes: a substrate (10) including a metal element; a bed layer (22) formed on a surface of the substrate (10), the bed layer (22) including, as a main component, a non-orientated spinel compound that has a spinel type crystal structure and includes at least one transition metal element, Mg, and oxygen; and a forcibly-oriented layer (24) formed on a surface of the bed layer (22), the forcibly-oriented layer (24) having biaxial orientation and including, as a main component, a rock salt type compound that has a rock salt type crystal structure and includes Mg.

Abstract: Adhesiveness between a metallic substrate and a metal oxide layer is made to increase. A superconducting thin film (1) includes a metallic substrate (10), a metallic layer (22) that is formed on a main surface of the metallic substrate (10) and includes a metal element capable of being passivated as a main component, a metal oxide layer (24) that is formed on the metallic layer (22) and includes the passivated metal element as a main component, and a superconducting layer (40) that is formed on the metal oxide layer (24) directly or through an intermediate layer and includes an oxide superconductor as a main component.

Abstract: A tape-shaped oxide superconductor includes a 15 to 100 nm-thick Ce—Gd—O-based oxide layer (Ce:Gd=40:60 to 70:30 molar ratio) and a 100 nm-thick Ce—Zr—O-based oxide layer (Ce:Zr=50:50 molar ratio) as first and second intermediate layers are formed by MOD on an Ni-base alloy substrate having a half value width (FWHM:??) of 6.5 degrees. A 150 nm-thick CeO2 oxide layer as a third intermediate layer is formed on the second intermediate layer by RF sputtering. A 1 ?m-thick YBCO superconducting layer is formed by TFA-MOD on the three-layer structure. In the tape-shaped oxide superconductor, the ?? values of the first to third intermediate layers are (6.0 to 6.5) degrees, (6.0 to 6.6) degrees, and (6.0 to 6.6) degrees, respectively, and the Jc value of the YBCO superconducting layer in liquid nitrogen is 1.8 to 2.2 MA/cm2.

Abstract: A high-temperature superconductor layer arrangement includes at least one substrate and one textured buffer layer made of oxidic material. The buffer layer displays at least one further constituent forming a homogeneous mixed-crystal layer. The further constituent is a transition metal from the first subgroup and/or forming at least a partial melt with the oxidic buffer material at an annealing temperature of ?1,600 degrees Celsius. The further constituent can particularly be copper and/or silver.

Abstract: An oxide superconducting conductor of the invention is configured to include an oxide superconducting layer including a substrate and an oxide superconductor formed on the substrate. The oxide superconductor being expressed by a composition formula of RE1Ba2Cu3Oy where RE represents a rare earth element and an expression of 6.5<y<7.1 is satisfied. A normal conduction phase including Ba and a different phase including an alkaline earth metal having an ionic radius smaller than that of Ba are dispersed in the oxide superconducting layer. The normal conduction phase is an oxide including Ba and one selected from a group consisting of Zr, Sn, Hf, Ce, and Ti.

Abstract: The present invention provides a method of making a high temperature superconductor having a doped, nanoparticulate pinning structure. The method includes providing a nanoparticulate pinning material, providing a cuprate material, doping the nanoparticulate pinning material with a dopant to form a doped nanoparticulate material, depositing a layer of the cuprate material on a substrate, and depositing a layer of the doped nanoparticulate material on the layer of cuprate material. The invention also provides a high temperature superconductor (HTS) having a doped, nanoparticulate pinning structure including a plurality of layers of a cuprate material and a plurality of layers of a doped nanoparticulate pinning material. At least one layer of the doped nanoparticulate pinning material is stacked between two layers of the cuprate material.

Abstract: A fault current limiting (FCL) article comprising a superconducting tape segment comprising a substrate, a buffer layer overlying the substrate, a high temperature superconducting (HTS) layer overlying the buffer layer, and a heat sink overlying the HTS layer, where the heat sink is comprised of a non-metal material, a thermal conductivity of not less than about 0.1 W/m-K at 20° C., an electrical resistivity of not less than about 1E-5 ?-m at 20° C., and a shunting circuit electrically connected to the superconducting tape segment.

Abstract: A superconducting switch is provided in which the structural strength of the superconducting switch is kept, and thermal efficiency between a superconducting film and a heater is high when an ON state (superconducting state) and an OFF state (normal conducting state) of the superconducting switch are switched. The superconducting switch includes a substrate, a heater for generating heat by energization, a conductive film, and a MgB2 film evaporated on the conductive film. The heater, the conductive film and the MgB2 film are laminated in this order on one surface of the substrate.

Abstract: Disclosed herein are superconducting composites, and preliminary products therefor, having a core comprising a superconducting phase, a first casing surrounding the core, and having an inner area abutting the core and having a first magnesium concentration and an outer area having a second magnesium concentration greater than the first magnesium concentration, wherein the second magnesium concentration is, on average, between 5 and 40 atomic percent. Desirably, the superconducting phase comprises a MgB2 phase. This arrangement allows for methods for producing the composites that reduce or eliminate subjecting the superconducting phase to mechanical stresses.

Abstract: A method for producing a high temperature superconductor (=HTS) coated conductor (12), wherein a buffer layer (2; 22) and an HTS layer (4; 24; 65) are deposited on a substrate (1; 21), with the following steps: a) after depositing the buffer layer (2; 22), the surface (2a) is locally roughened, resulting in a roughened surface (13), b) a non-superconducting, closed intermediate layer (3; 23) is deposited on top of the roughened surface (13), c) and the HTS layer (4; 24; 65) is deposited on top of the intermediate layer (3; 23). A simple method for producing a HTS coated conductor with reduced losses, and with improved critical current and critical magnetic field is thereby provided.

Abstract: A substrate for an oxide superconductor including: a metal base; an interlayer of MgO formed on the metal base by ion beam assisted deposition method (IBAD METHOD); and a cap layer that is formed directly on the interlayer and has a higher degree of crystal orientation than that of the interlayer, in which the interlayer of MgO is subjected to a humidity treatment prior to formation of the cap layer.

Abstract: A fault current limiter, with a superconducting device (1; 21; 31; 41; 51; 61; 71; 72) comprising a sequence of superconducting elements (2a-2f), each with—a substrate (3a-3d), —a superconducting film (5a-5d), and —an intermediate layer (4a-4c) provided between the substrate and the superconducting film, wherein the superconducting films (5a-5d) of adjacent superconducting elements (2a-2f) of the sequence are electrically connected, in particular in series, is characterized in that the substrates (3a-3d) of the superconducting elements (2a-2d) are electrically conducting substrates (3a-3d), wherein the electrically conducting substrate (3a-3d) of each superconducting element (2a-2f) of the sequence is electrically insulated from each electrically conducting substrate (3a-3d) of those adjacent superconducting elements (2a-2f) within the sequence whose superconducting films (5a-5d) are electrically connected in series with the superconducting film (5a-5d) of said superconducting element (2a-2f), and that the in

Abstract: A fault current limiter, with a superconducting device (1; 21; 31; 41; 51; 61; 71; 72) comprising a sequence of superconducting elements (2a-2f), each with an electrically conducting substrate (3a-3d), a superconducting film (5a-5d), and an electrically insulating intermediate layer (4a-4c) provided between the substrate and the superconducting film, wherein the superconducting films (5a-5d) of adjacent superconducting elements (2a-2f) of the sequence are electrically connected, in particular in series, wherein the electrically conducting substrate (3a-3d) of each superconducting element (2a-2f) of the sequence is electrically insulated from each electrically conducting substrate (3a-3d) of those adjacent superconducting elements (2a-2f) within the sequence whose superconducting films (5a-5d) are electrically connected in series with the superconducting film (5a-5d) of said superconducting element (2a-2f).

Abstract: A superconducting element (SE1-SE5) with a central section (20) located between two end sections (21a, 21b) of the superconducting element (SE1-SE5), the superconducting element (SE1-SE5) has a substrate tape (10), a buffer layer (11), a high temperature superconducting (HTS) layer (12), a first protection layer (14), and a shunt layer (17), The superconducting element (SE1-SE5) has at least one elongated opening (19) in the central section (20) elongated between the two end sections (21a, 21b), whereby the at least one elongated opening (19) divides the central section (20) of the superconducting element (SE1-SE5) into at least two HTS strips (18a, 18b, 18c), whereby the shunt layer (17) envelops the surface of each of the HTS strips (18a, 18b, 18c). The superconducting element shows improved electrical stabilization and time stability.

Abstract: A fault current limiter and a method for the production thereof has a superconducting device (1; 21; 31; 41; 51; 61; 71; 72) comprising a sequence of superconducting elements (2a-2f), each with an electrically conducting substrate (3a-3d), a superconducting film (5a-5d) and an electrically insulating intermediate layer (4a-4c) provided between the substrate and the superconducting film. The superconducting films (5a-5d) of adjacent superconducting elements (2a-2f) of the sequence are electrically connected, in particular in series, wherein the electrically conducting substrate (3a-3d) of each superconducting element (2a-2f) of the sequence is electrically insulated from each electrically conducting substrate (3a-3d) of those adjacent superconducting elements (2a-2f) within the sequence whose superconducting films (5a-5d) are electrically connected in series with the superconducting film (5a-5d) of said superconducting element (2a-2f).

Abstract: A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

Abstract: An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer.

Abstract: A thin film superconductive wire material (16) and an electro conductive tape (15) are immersed in a solder bath (35) containing a solder, which includes Sn(tin) and Bi (bismuth), to bond the thin film superconductive wire material (16) and the electro conductive tape (15) and a composite superconductive wire material (10) is formed.

Abstract: Systems, articles, and methods are provided related to nanowire-based detectors, which can be used for light detection in, for example, single-photon detectors. In one aspect, a variety of detectors are provided, for example one including an electrically superconductive nanowire or nanowires constructed and arranged to interact with photons to produce a detectable signal. In another aspect, fabrication methods are provided, including techniques to precisely reproduce patterns in subsequently formed layers of material using a relatively small number of fabrication steps. By precisely reproducing patterns in multiple material layers, one can form electrically insulating materials and electrically conductive materials in shapes such that incoming photons are redirected toward a nearby electrically superconductive materials (e.g., electrically superconductive nanowire(s)). For example, one or more resonance structures (e.g.

Abstract: An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a <001> direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.

Abstract: A method for producing a high temperature superconductor (=HTS) coated conductor (12), wherein a buffer layer (2; 22) and an HTS layer (4; 24; 65) are deposited on a substrate (1; 21), with the following steps: a) after depositing the buffer layer (2; 22), the surface (2a) is locally roughened, resulting in a roughened surface (13), b) a non-superconducting, closed intermediate layer (3; 23) is deposited on top of the roughened surface (13), c) and the HTS layer (4; 24; 65) is deposited on top of the intermediate layer (3; 23). A simple method for producing a HTS coated conductor with reduced losses, and with improved critical current and critical magnetic field is thereby provided.

Abstract: A coated conductor is provided with improved electrical connection between the conductive layers such as the high temperature superconductor layer and a metal protection layer applied onto the high temperature superconductor layer and the substrate. A method includes obtaining such electrical connection, in particular, creating a coated conductor wherein the substrate is a core covered with the layers all around its periphery.

Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Abstract: A coated conductor comprising an improved buffer layer architecture where the buffer layers are obtainable by chemical solution deposition and where the buffer layers essentially adopt the degree of texture of the substrate.

Abstract: A fault current limiter and a method for the production thereof has a superconducting device (1; 21; 31; 41; 51; 61; 71; 72) comprising a sequence of superconducting elements (2a-2f), each with an electrically conducting substrate (3a-3d), a superconducting film (5a-5d) and an electrically insulating intermediate layer (4a-4c) provided between the substrate and the superconducting film. The superconducting films (5a-5d) of adjacent superconducting elements (2a-2f) of the sequence are electrically connected, in particular in series, wherein the electrically conducting substrate (3a-3d) of each superconducting element (2a-2f) of the sequence is electrically insulated from each electrically conducting substrate (3a-3d) of those adjacent superconducting elements (2a-2f) within the sequence whose superconducting films (5a-5d) are electrically connected in series with the superconducting film (5a-5d) of said superconducting element (2a-2f).

Abstract: A fault current limiter, with a superconducting device (1; 21; 31; 41; 51; 61; 71; 72) comprising a sequence of superconducting elements (2a-2f), each with an electrically conducting substrate (3a-3d), a superconducting film (5a-5d), and an electrically insulating intermediate layer (4a-4c) provided between the substrate and the superconducting film, wherein the superconducting films (5a-5d) of adjacent superconducting elements (2a-2f) of the sequence are electrically connected, in particular in series, wherein the electrically conducting substrate (3a-3d) of each superconducting element (2a-2f) of the sequence is electrically insulated from each electrically conducting substrate (3a-3d) of those adjacent superconducting elements (2a-2f) within the sequence whose superconducting films (5a-5d) are electrically connected in series with the superconducting film (5a-5d) of said superconducting element (2a-2f).

Abstract: An optical element is disclosed which includes transparent superconductor material.

Abstract: A fault current limiter, with a superconducting device (1; 21; 31; 41; 51; 61; 71; 72) comprising a sequence of superconducting elements (2a-2f), each with—a substrate (3a-3d), —a superconducting film (5a-5d), and —an intermediate layer (4a-4c) provided between the substrate and the superconducting film, wherein the superconducting films (5a-5d) of adjacent superconducting elements (2a-2f) of the sequence are electrically connected, in particular in series, is characterized in that the substrates (3a-3d) of the superconducting elements (2a-2d) are electrically conducting substrates (3a-3d), wherein the electrically conducting substrate (3a-3d) of each superconducting element (2a-2f) of the sequence is electrically insulated from each electrically conducting substrate (3a-3d) of those adjacent superconducting elements (2a-2f) within the sequence whose superconducting films (5a-5d) are electrically connected in series with the superconducting film (5a-5d) of said superconducting element (2a-2f), and that the in

Abstract: A new family of superconducting materials with critical temperature up to 55 K have recently been discovered, comprising a crystal structure with atomic layers of iron and arsenic alternating with atomic layers of rare-earth oxide or alkaline earth. The present invention identifies structures for integrated circuit elements (including Josephson junctions) in these and related materials. These superconducting circuit elements will operate at a higher temperature than low-temperature superconductors such as niobium, and may be easier to manufacture than prior-art high-temperature superconductors based on copper-oxides.

Abstract: A high-temperature superconductor layer arrangement includes at least one substrate and one textured buffer layer made of oxidic material. The buffer layer displays at least one further constituent forming a homogeneous mixed-crystal layer. The further constituent is a transition metal from the first subgroup and/or forming at least a partial melt with the oxidic buffer material at an annealing temperature of ?1,600 degrees Celsius. The further constituent can particularly be copper and/or silver.

Abstract: Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

Abstract: Disclosed herein is a precursor solution for forming a biaxially oriented buffer layer through low-temperature heat treatment, by which a highly oriented buffer layer can be formed even when the precursor solution is heat-treated at a low temperature of 1000° C. or lower at the time of forming a buffer layer through a wet chemical method. The precursor solution is prepared by adding a carboxylate or an alkoxide of bismuth, boron, lead, gallium, or the like, which is a metal salt for forming an oxide having a low melting point of 1200° C. or lower after pyrolysis in an oxygen atmosphere, to a precursor solution for forming a buffer layer through a wet chemical method.

Abstract: A coated conductor with simplified layer architecture includes a biaxial textured substrate, a template buffer layer composed of a material having the general formula RE2?xB2+xO7 with RE being at least one lanthanoid metal, B being at least one metal selected from Zr and Hf and ?0.4?x?+0.7, where the superconductor layer is obtainable by hybrid liquid phase epitaxy and can be deposited directly onto the template buffer layer.

Abstract: A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

Abstract: A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10?5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.

Abstract: RE superconductive layer excelling in Jc and Tc is formed on an interlayer capable of preventing cracking and diffusion of substrate-constituting Ni element into YBCO layer and excelling in crystallinity and surface smoothness. The interlayer is formed by coating a surface of metal substrate with a mixed solution composed of an organometallic acid salt of cerium, an organometallic acid salt of a solid solution formation element capable of forming a solid solution with cerium and an organometallic acid salt of a charge compensation element capable of compensating for a charge mismatch attributed to a difference between the electron valences of respective ions of cerium and the solid solution formation element and subsequently carrying out heat treatment in a reducing atmosphere of 900 to 1200° C. whose pressure ranges from 0.1 Pa to below atmospheric pressure. Thereafter, a rare earth oxide superconductive layer is formed on the interlayer.

Abstract: The conductive path of the current-limiting device is made of a strip-shaped super conductor, whereby the structure thereof has a metallic strip, at least one oxidic buffer, a type AB2Cu3Ox super conductive layer and a metal cover layer which is arranged thereon. An intrinsically stable bifilar coil is embodied with said super conductor, and a distance is maintained between adjacent coil windings, wherein a distance maintainer is arranged which is transparent to the coolant.

Abstract: An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer.

Abstract: A simplified architecture for a superconducting coated conductor is provided and includes a substrate, a layer of titanium nitride directly upon the substrate, the layer of titanium nitride deposited by ion beam assisted deposition (IBAD), a layer of a buffer material having chemical and structural compatibility with said layer of titanium nitride, the buffer material layer directly upon the IBAD-titanium nitride layer, and a layer of a high temperature superconductive material such as YBCO.

Abstract: Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO.

Abstract: The present invention relates to a method for producing a defect-containing superconducting film, the method comprising (a) depositing a phase-separable layer epitaxially onto a biaxially-textured substrate, wherein the phase-separable layer includes at least two phase-separable components; (b) achieving nanoscale phase separation of the phase-separable layer such that a phase-separated layer including at least two phase-separated components is produced; and (c) depositing a superconducting film epitaxially onto said phase-separated components of the phase-separated layer such that nanoscale features of the phase-separated layer are propagated into the superconducting film.

Abstract: A coated conductor with simplified layer architecture includes a biaxial textured substrate, a template buffer layer composed of a material having the general formula RE2?xB2+xO7 with RE being at least one lanthanoid metal, B being at least one metal selected from Zr and Hf and ?0.4?x?+0.7, where the superconductor layer is obtainable by hybrid liquid phase epitaxy and can be deposited directly onto the template buffer layer.

Abstract: Superconductor wires or layers having improved properties and methods for making the same are described. The superconducting layer includes a rare earth element-alkaline earth element-transition metal oxide having an average stacking fault density that is greater than about 0.01 nm?1, wherein two or more rare earth cations form the rare earth element. To form the superconductor layer of the present invention, a layer having a rare earth element-alkaline earth element-transition metal oxide substantially in a first crystal structure can be provided to a substrate where two or more rare earth cations form the rare earth element. The layer can then be heated at a temperature that is greater than 550° C. under oxidizing conditions to form a high-temperature superconducting layer substantially in a second crystal structure.

Abstract: A high-temperature superconducting ribbon conductor composite device includes a high-temperature superconducting ribbon conducing composite including a substrate ribbon, at least one buffer layer disposed above the substrate ribbon, an HTSL layer disposed above the at least one buffer layer, and a cover. A cooling layer is disposed on the high-temperature superconducting ribbon conductor composite and includes at least one of a metal and a partly conductive or non-conductive oxide layer of at least one of an alkali, an alkaline earth and a rare earth element. The cooling layer has a thickness of 20 ?m to 200 ?m.

Abstract: The invention herein is directed towards a material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.