Abstract: The invention relates to a method for producing a superconductive element to be used as a wire-in-channel superconductor in magnetic resonance imaging (MRI) and in nuclear magnetic resonance (NMR) applications, which superconductive element contains a superconductive wire and a copper component having a longitudinal groove and the superconductive wire being positioned in the groove. In order to produce the wire-in-channel superconductive element by a mechanical contact between the superconductive wire and a wall of the groove in the copper component, at least one contact surface is coated with a lead free solder material before having the mechanical contact. In order to enhance the thermal and electrical conduction and to create a bond between the said components the soldering material is fused in annealing process step.

Abstract: A metal substrate for an oxide superconducting wire, which comprises a polycrystalline metal substrate with a rolled aggregate structure having a {100} plane which is parallel to the rolled surface and a <001> axis which is parallel to the rolling direction, and an oxide crystal layer comprising an oxide of the polycrystalline metal and formed on a surface of the polycrystalline metal substrate, wherein at least 90% of grain boundaries in the oxide crystal layer have an inclination of 10° or less, and at least 90% of the {100} plane of the oxide crystal layer make an angle of 10° or less with the surface of the polycrystalline metal substrate.

Abstract: A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus is described. The CVD apparatus includes a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, optionally, communicating with at least one temperature regulated manifold, at least one reactants mixer, and, optionally, at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

Abstract: The inventive superconducting wire comprises a substrate and a continuous layer of atomically ordered superconducting material. The inventive wire has a length greater than 10 meters.

Abstract: This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.

Abstract: A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

Abstract: An object of the present invention is to provide a method of depositing yttrium-stabilized hafnia use for a DRAM capacitor insulating film while controlling the composition at a high accuracy by an atomic layer deposition method. The atomic deposition method is performed by introducing a hafnium compound precursor, introducing a yttrium compound precursor and introducing an oxidant as one cycle. In the atomic deposition method, the addition amount of yttrium into hafnia is controlled accurately by controlling the time of introducing the hafnium compound precursor and the yttrium compound precursor and controlling the replacement ratio of OH groups on a sample surface by each of the precursors.

Abstract: A method of forming a superconducting conductor is disclosed. The method provides translating a substrate tape through a deposition chamber and along a helical path, where the helical path has multiple windings of the substrate tape and each winding of the substrate tape extends along a feed path and a return path. The method further provides depositing a HTS layer overlying the substrate tape within a deposition chamber, wherein the deposition chamber houses the substrate tape along the feed path but not the return path.

Abstract: Boride thin films of conducting and superconducting materials are formed on silicon by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, on silicon substrates by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the silicon substrates.

Abstract: A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer.

Abstract: A method of coating a substrate for a high temperature superconductor material is disclosed, including loading a substrate into a first deposition chamber, routing the substrate in the first deposition chamber such that the substrate forms a helical winding in the first deposition chamber, and depositing a first buffer layer to overlie the substrate as the substrate translates along the helical winding. The buffer layer has a biaxial crystallographic texture.

Abstract: The invention relates to multi-layer articles and methods of making such articles. The methods include first conditioning the surface of an underlying layer, such as a buffer layer or a superconductor layer, then disposing a layer of material on the conditioned surface. The conditioned surface can be a high quality surface. Superconductor articles formed by these methods can exhibit relatively high critical current densities.

Abstract: A method includes forming an as-grown film of a superconductor composed of a MgB2 compound which is made by simultaneous evaporation of magnesium and boron. The as-grown film is superconductive without an annealing process to make the film superconductive. The method can be applied to fabricate an integrated circuit of the superconductor film, because a high temperature annealing process to make the as-grown film superconductive is not needed.

Abstract: The aim of the invention is to provide a metal strip for epitaxial coating with a biaxially textured layer, this metal strip, however, being able to be produced in an uncomplicated manner and having a high tensile strength, low magnetic losses and/or a high electrical conductivity. According to the invention, the metal strip is comprised of Nj, Cu, Ag or alloys thereof all serving as basic material, whereby the one-layer metal strip and, in the instance of a multilayer metal strip, at least one of its layers contains 10 nm to 5 ?m large, strength-increasing dispersoids comprised of carbides, borides, oxides and/or nitrides with a volume proportion ranging from 0.1 to 5%. In the instance of a multilayer metal strip, the layers form a composite, and at least one of the layers does not contain any dispersoids and has a biaxial texture. For the production, a starting material is used, which is comprised of Ni, Cu, Ag or of alloys thereof all serving as basic material and which contains 0.

Abstract: The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive deposition system includes two dynamically isolated deposition chambers. The substrate is helically wrapped about a cooling block within the first deposition chamber such that the tape is exposed to a deposition zone a number of times sufficient to correspond to the desired film thickness. A shielding element may be included in the second deposition chamber to limit the size of the second chamber deposition zone and thus the film thickness of the second coating layer.

Abstract: Ion texturing methods and articles are disclosed.

Abstract: A superconductor having at least one Hg—M—Cu—O (M=Ba, Sr and/or Ca) superconducting film provided on a substrate and having a thickness of between 300 Å to 950 Å. The superconductor may be prepared by forming, on a substrate, a precursor laminate composed of a first, M—Cu—O film and a second, Hg—O film. The precursor laminate film-bearing substrate is placed in a closed vacuum chamber together with a first pellet of HgO, MO and CuO and a second pellet of MO and CuO. The contents in the chamber are heated to form, on the substrate, a superconducting Hg—M—Cu—O film. The thickness of the first M—Cu—O film of the precursor is controlled so that the thickness of the superconducting Hg—M—Cu—O film is in the range of between 300 Å to 950 Å.

Abstract: A high temperature superconductor film which is Y—Ba—Cu—O-based and formed on a dielectric substrate 10, and has a Cu composition ratio to the Ba near the upper surface of the film which is higher than a Cu composition ratio to the Ba inside the film. The YBCO-based high temperature superconductor film is formed with a Cu composition on the film surface maintained higher with respect to the stoichiometric composition, whereby the Cu oxide can be easily produced while the production of the yttrium oxides can be depressed. The yttrium oxides cannot be easily produced, which makes it difficult for pores and crystal strains to be generated while the Cu oxide functions as a flux for advancing the crystal growth, whereby the YBCO-based high temperature superconductor film can have good film quality and single crystal. The superconducting elements can be formed of the YBCO-based high temperature superconducting film of such good film quality.

Abstract: A plurality of superconductor particles are formed being of a first material which is relatively brittle and is selected to be in a superconductive state at a relatively high temperature, typically above 77K which is the temperature of liquid nitrogen. A coating layer is formed on each superconductor particle, the coating layer being of a second material selected to be substantially non-reactive with the first material. The coated particles are then mixed with a third material to form a composite wherein the third material is in proximity to the first material but separated by the second material. The third material is selected to be relatively ductile when compared to the first material and to be driven to a superconductive state by the first material when the first material is in a superconductive state and the third material is in proximity to the first material. The second material protects the third material from oxidation by the first material.

Abstract: A superconductor having at least one Hg—M—Cu—O (M=Ba, Sr and/or Ca) superconducting film provided on a substrate and having a thickness of between 300 Å to 950 Å. The superconductor may be prepared by forming, on a substrate, a precursor laminate composed of a first, M—Cu—O film and a second, Hg—O film. The precursor laminate film-bearing substrate is placed in a closed vacuum chamber together with a first pellet of HgO, MO and CuO and a second pellet of MO and CuO. The contents in the chamber are heated to form, on the substrate, a superconducting Hg—M—Cu—O film. The thickness of the first M—Cu—O film of the precursor is controlled so that the thickness of the superconducting Hg—M—Cu—O film is in the range of between 300 Å to 950 Å.

Abstract: Ion texturing methods and articles are disclosed.

Abstract: A polycrystalline silver member is stuck on a given long member made of Hastelloy material or stainless steel material, to make a long base material. Then, an yttrium-based high temperature superconducting film is fabricated in the long base material by a CVD method with applying a magnetic field of preferable 2T or over. Thereby, an yttrium-based high temperature superconducting tape can be provided which can maintain the superconductivity under a higher magnetic field environment.

Abstract: The invention provides a method for preparing a layered structure comprising a lower thin film composed of an oxide superconductor and an upper thin film composed of a material different from the oxide superconductor on a substrate. The lower thin film is deposited by a molecular beam deposition process and the upper thin film is deposited by a process having a deposition rate faster than that of the molecular beam deposition process.

Abstract: An alloy capable of forming a (100) [001] cube-texture by thermo-mechanical techniques has 5 to 45 atomic percent nickel with the balance being copper. The alloy is useful as a conductive substrate for superconducting composites where the substrate is coated with a superconducting oxide. A buffer layer can optionally be coated on the substrate to enhance deposition of the superconducting oxide. Methods for producing the alloys, substrates, and superconductors are included.

Abstract: Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting Tl-containing films (e.g., Tl-1212 or Tl-2212) in an Hg-vapor environment so as to cause a substitution of Tl by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial Tl-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900° C. for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50%. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor.

Abstract: The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

Abstract: A reactor for coating flat substrates and particularly wafers is described which has

Abstract: In a method for producing laminate, a buffer layer is applied to a substrate, with the buffer layer material being evaporated from the buffer layer material dispensing devices at an angle &agr;1≠0 at the normal to the substrate surface onto the latter, before an oriented thin layer is evaporated. According to the invention, provision is made such that (a) following evaporation of the buffer layer and prior to the evaporation of the oriented thin layer, at least one cover layer is evaporated under deposition conditions that vary from those under which the buffer layer was applied, especially at a different pressure, different temperature, different rate, and/or different angle &agr;2≠&agr;1, especially &agr;2<&agr;1, preferably &agr;2≈0° to the substrate surface normal, and/or is evaporated on the buffer layer in such fashion that the buffer layer has a biaxial texture and/or facets.

Abstract: A process for preparing an oxide superconductor thin film which has a high crystalline, clean and excellent superconductive surface on a substrate by MBE. The MBE is effected under a condition that the substrate is heated and an oxidizing gas is locally supplied to the proximity of the substrate so that the pressure of the proximity of the substrate becomes 6×10−6 to 8×10−5 Torr at a background pressure.

Abstract: The front surface of a semiconductor substrate is formed with a trench. An insulating film is formed on the front surface of the semiconductor substrate including the trench while the bottom of the trench is kept at a higher temperature than the surface opening of the trench. To this end, the back surface of the semiconductor substrate is kept at a higher temperature than the front surface. This is done by heating the back surface of the semiconductor substrate with a halogen lamp. Alternatively, the front surface temperature is made lower than the back surface temperature by blowing a gas for forming an insulating film against the front surface of the semiconductor substrate.

Abstract: A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O2 including O3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources, an oxidizing gas is locally supplied to the vicinity of the substrate and a growing thin film is illuminated by ultraviolet.

Abstract: An oxide superconductor article is provided having an oxide superconductor film having a thickness of greater than 0.5 microns disposed on a substrate, said article having a transport critical current density (Jc) of greater than or equal to about 105 A/cm2 at 77 K, zero field. The oxide superconductor film is characterized by high Jc and high volume percent of c-axis epitaxial oxide grains, even with thicknesses of up to 1 micron.

Abstract: This invention relates to an apparatus and method for forming a high temperature superconducting film on a tape substrate. In this invention, the superconducting film is deposited on the tape substrate wound around a cylindrical substrate holder inserted in an auxiliary chamber. The holder rotates during the whole deposition process. Vapors of film materials are supplied from a main chamber through an opening between the two chambers. According to the present invention, it is possible to form a highly uniform high temperature superconducting film on a tape substrate at high speeds suitable for large scale production. The manufacturing speed can easily be controlled by the size of the substrate holder.

Abstract: The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

Abstract: A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.

Abstract: Specific alloys, in particular Ni-based alloys, that can be biaxially textured, with a well-developed, single component texture are disclosed. These alloys have a significantly reduced Curie point, which is very desirable from the point of view of superconductivity applications. The biaxially textured alloy substrates also possess greatly enhanced mechanical properties (yield strength, ultimate tensile strength) which are essential for most applications, in particular, superconductors. A method is disclosed for producing complex multicomponent alloys which have the ideal physical properties for specific applications, such as lattice parameter, degree of magnetism and mechanical strength, and which cannot be in textured form. In addition, a method for making ultra thin biaxially textured substrates with complex compositions is disclosed.

Abstract: The invention provides a structure comprising a high temperature superconducting layer deposited on a ceramic polycrystalline ferrite plate suitable for making commercial microwave devices. In one embodiment, the high temperature superconductor is yttrium barium copper oxide (YBCO), the ferrite is yttrium iron garnet (YIG), and the microwave device is a phase shifter. The method of making this embodiment comprises, polishing the YIG plate, depositing biaxially oriented yttria-stabilized zirconia (YSZ) to form a crystalline template using an ion-beam-assisted-deposition technique, depositing a CeO.sub.2 lattice matching buffer layer using pulsed laser deposition, depositing YBCO using pulsed laser deposition, and annealing the YBCO in oxygen. Etching the YBCO to form a meanderline patterned waveguide results in a high figure-of-merit microwave phase shifter when the device is cooled with liquid nitrogen and an external magnetic field is applied.

Abstract: A thin film structure including a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of a nonlinear dielectric material thereon the thin layer of homoepitaxial lanthanum aluminum oxide is provided together with microwave and electro-optical devices including such a thin film structure.

Abstract: A chemical vapor deposition (CVD) method for forming a multi-component oxide layer. There is first provided a chemical vapor deposition (CVD) reactor chamber. There is then positioned within the chemical vapor deposition (CVD) reactor chamber a substrate. There is then formed over the substrate a multi-component oxide precursor layer. The multi-component oxide precursor layer is formed from at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material. There is then oxidized with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form a multi-component oxide layer formed over the substrate.

Abstract: A method is disclosed for fabricating YBa.sub.2 Cu.sub.3 O.sub.7 superconductor layers with the capability of carrying large superconducting currents on a metallic tape (substrate) supplied with a biaxially textured oxide buffer layer. The method represents a simplification of previously established techniques and provides processing requirements compatible with scale-up to long wire (tape) lengths and high processing speeds. This simplification has been realized by employing the BaF.sub.2 method to grow a YBa.sub.2 Cu.sub.3 O.sub.7 film on a metallic substrate having a biaxially textured oxide buffer layer.

Abstract: A precursor is made from a plurality of materials having different vapor pressures. The precursor and a source material are placed in a closed heat treatment furnace. The source material is materials which are the same as some of the materials contained in the precursor and having particular vapor pressures. The precursor and source material is thermally treated in the furnace while the source material is being supplied, so the particular materials in the precursor have their evaporation suppressed, thereby forming compounds. The compounds may be oxide superconductors, oxide dielectric, and so on.

Abstract: A substrate is set in a reaction chamber, to heat the substrate to a predetermined temperature. Tl, Ba, Ca, Cu and O are supplied to the substrate by a Tl evaporation source and a target, to cause a TlBaCaCuO film to grow on the substrate. The TlBaCaCuO film is crystallized for each formation of each of its blocks each having a layered structure. In an incomplete block which is being formed, the amount of evaporation of Tl by the heating is large, so that the amount of evaporation of Tl varies depending on the ratio of an uncrystallized region on its surface. In a complete block after the formation, the amount of evaporation of Tl by the heating is small, and is approximately constant. Film growth is stopped for a predetermined time period for each formation of the block, to control the amount of supply of Tl depending on the forming step of the block.

Abstract: Herein disclosed is a superconductive thin film formation method of forming a superconductive thin film having a high critical temperature and a low surface resistance. The method comprises a first step of depositing a superconductive thin film layer on a substrate under a first condition. The superconductive thin film layer has a thickness smaller than that of the superconductive thin film. The method further comprises a second step of introducing oxygen under a second condition. The method further comprises a third step of depositing a superconductive thin film layer on the previously deposited superconductive thin film layer under the first condition and fourth step of introducing oxygen under the second condition. The method further comprises a fifth step of repeating the third and fourth steps until the sum of the thicknesses of the superconductive thin film layers is substantially equal to the predetermined thickness of the superconductive thin film.

Abstract: The present invention discloses an integrated circuit that is wired with a high-temperature superconductive material that is superconductive at temperatures of about 70.degree. K and above, and methods of making the integrated circuit. The front-end manufactured semiconductor structure is patterned with a preferred precursor metal or metal oxide and a complementary compound is superposed and reacted to form wiring lines of superconductor ceramics that complete integrated circuits within the front-end manufactured semiconductor structure. The front-end manufactured semiconductor structure is alternatively patterned first with the complementary compound and the precursor metal is thinly patterned by ion implantation. The front-end manufactured semiconductor structure is then treated to form wiring lines of superconductor ceramics that complete integrated circuits within structure.

Abstract: A high temperature superconductor (HTS) tri-layer structure and a method for providing the same are described. Preferable two dimensional growth for all layers is provided resulting in smooth surfaces and highly crystalline layers. Full oxygenation of HTS under-layer(s) is provided despite having thick intervening dielectric mid-layer. HTS over- and under-layers are preferably structurally and electrically similar and have high crystallinity, the HTS layers have high T.sub.c (e.g. >90K) comparable to T.sub.c of single layer superconductor layers and a high J.sub.c (e.g. >10.sup.6 A/cm.sup.2), the tri-layer properties do not significantly degrade as the thickness of the layers is increased, and the dielectric mid-layer has high resistivity and is substantially pin-hole free.

Abstract: An apparatus for thallium-containing superconductor with grains having c-axis alignment perpendicular to the plane of the substrate is fabricated by controlling the thallium oxide vapor partial pressure during the steps of warming the precursor, reaction soaking the precursor with the thallium oxide vapor, and cooling the thallium-containing precursor in a thallium oxide vapor below about 10.sup.-3 atmospheres.

Abstract: Superconducting transition metal oxide films are provided which exhibit very high onsets of superconductivity and superconductivity at temperatures in excess of 40.degree. K. These films are produced by vapor deposition processes using pure metal sources for the metals in the superconducting compositions, where the metals include multi-valent nonmagnetic transition metals, rare earth elements and/or rare earth-like elements and alkaline earth elements. The substrate is exposed to oxygen during vapor deposition, and, after formation of the film, there is at least one annealing step in an oxygen ambient and slow cooling over several hours to room temperature. The substrates chosen are not critical as long as they are not adversely reactive with the superconducting oxide film. Transition metals include Cu, Ni, Ti and V, while the rare earth-like elements include Y, Sc and La. The alkaline earth elements include Ca, Ba and Sr.

Abstract: Use of monolayer films for the direct modification of high-T.sub.c superconductor structures and devices. Methods for the formation of superconductor localized monolayer films have been discovered based on the spontaneous adsorption of molecules containing ligating functionalities, such as alkylamine, arylamine, and alkylthiol moieties. Molecules containing these types of functionalities are found to bind tenaciously to the metal ions which form the high-T.sub.c superconductor surface. The derivatized superconductor structures can be prepared simply by soaking the high-T.sub.c, superconductor structure or device in a dry organic solvent system which contains the derivatizing agent. Large changes in the superconductor interfacial properties can be achieved with such procedures allowing for the atomic level control of the surface properties of the superconductor.

Abstract: Method of vacuum depositing a monomolecular layer on a surface, the monomolecular layer comprising at least one element selected from groups IIa, IIIa, IVa, VIIIa, Ib, IIb, IIIb, Vb of the periodic table. The method consists in heating said surface to a predetermined temperature (T) of less than 600.degree. C. and vacuum evaporating at least the above-mentioned element for the purpose of depositing it on the receptor surface, the total atomic flow of the element(s) onto the receptor surface being from 10.sup.12 to 10.sup.15 atoms/cm.sup.2 s. According to the invention, the formation of the monomolecular layer is monitored in real time, and evaporation of the element is stopped when the complete formation of the monomolecular layer is detected.

Abstract: Improved superconducting thin films are provided having very high T.sub.c (zero) and J.sub.c values, on the order of greater than or equal to 120K and 10.sup.5 A/cm.sup.2 or greater, respectively. The films of the invention are adapted for deposit and support on a compatible substrate, and include a superconductive material, most preferably Tl.sub.2 Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10, with up to about 10% elemental gold admixed with the superconductive material. The preferred method for fabricating the thin film superconductors comprises first forming a non-superconducting precursor film on a compatible substrate which is placed in contact with an unsintered bulk body containing thallium; the substrate with precursor film are sintered with the bulk body to form the desired superconductor material.