Abstract: An epitaxial structure comprising a silicon containing substrate and a high T.sub.c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.

Abstract: Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order.In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600.degree.-650.degree. C. for at least 5 minutes in the presence of O.sub.2, and is heated at a temperature between 200.degree. and 400.degree. C. during the non-superconducting intermediate thin film layer is deposited.

Abstract: A process for producing thin films of superconducting material by bombarding a heated target with radiation from pulsed high energy UV laser to form a plume of target material, and depositing the plume on a substrate is disclosed.

Abstract: Coatings such as high Tc superconductor material on substrates which incorporate reactive gases like oxygen and nitrogen are formed by providing the substrate so that it is spaced from the target region in a coating chamber, forming particles of the coating material by plasma from a cathodic target and entraining the particles to the substrate spaced from the plasma in a gas stream including the reactive gas and at a pressure of 0.1 to 20 mbar.

Abstract: A superconducting structure is provided comprising a substrate, a superconductor coating supported by the substrate and a diffusion barrier positioned between the superconductor coating and the substrate to inhibit diffusion of contaminants from the substrate to the superconductor coating. The coating is a ceramic oxide having superconducting properties. The diffusion barrier may likewise be a ceramic oxide, but differs in its specific composition to provide it with a peritectic decomposition temperature greater than the superconductor coating. Accordingly, the diffusion barrier exhibits substantially lower atomic mobility than the superconductor coating during manufacture of the superconducting structure, thereby preventing contamination of the coating by the substrate.

Abstract: A method for manufacturing an oxide superconductor film is disclosed, which comprises the steps of: preparing a substrate; depositing an oxide superconductor film on said substrate by chemical vapor deposition (CVD); and supplying excited oxygen to or near a film deposition site on said substrate during the deposition of said film.

Abstract: In manufacturing a high-temperature superconductive oxide thin film by irradiating a laser beam onto an oxide target in an atmosphere of oxygen to form the high-temperature superconductive oxide thin film on an oxide substrate, the laser beam is irradiated from a back surface of the substrate and is transmitted through the substrate, and thereafter the laser beam is irradiated onto the oxide target.

Abstract: This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.

Abstract: A method is disclosed of forming an oxide superconducting film comprising the steps of (1) mixing (a) the vapors of organic metal materials in such proportions as to provide a predetermined metal composition, or (b) said organic metal materials in such proportions as to provide a predetermined metal composition vaporizing and mixture, and (2) bringing the mixture into contact with a heated substrate so that an oxide superconducting film is formed on said substrate by a chemical vapor deposition process, wherein laser light is applied onto said substrate during formation of said oxide superconducting film on said substrate, whereby the crystallographic orientation of said oxide superconducting film being formed in the irradiated area of said substrate is such that the c-axis is parallel to the substrate.

Abstract: A process for producing an oxide crystalline thin film having a structure in which atomic layers having different chemical compositions are laminated along the film thickness direction, the process including the steps of depositing amorphous atomic layers on a substrate, layer by layer and heating the amorphous deposit to crystallize the deposit, the respective amorphous atomic layers having the same chemical compositions as those of the corresponding atomic layers of the oxide crystal structure and being stacked in an order corresponding to the atomic lamination of the crystal structure.

Abstract: A method of manufacturing a superconducting ceramics elongated body by forming a longitudinally continuous superconducting layer on at least a part of the surface of a flexible ceramics elongated substrate by evaporation under the presence of oxygen ions.

Abstract: A process is described for producing a superconducting thick layer on a base material by thermally spraying a powder containing bismuth, lead, strontium, calcium and copper in oxidic form. First a powdered starting mixture is prepared which has a composition corresponding to the formula:Bi.sub.1.90-x Pb.sub.x Sr.sub.2-y Ca.sub.2.2-z Cu.sub.3.5-q O.sub.v,in which0.1.ltoreq.x.ltoreq.0.7,0.ltoreq.y.ltoreq.0.4,-0.5.ltoreq.z.ltoreq.+0.5,0.ltoreq.q.ltoreq.1.2 andv is the oxygen content calculated from the starting materials. Then the powder is heated for not less than 1 hour at a temperature of not less than 750.degree. C. in an oxygen-containing atmosphere and cooled again. The powder pre-reacted in this way is applied to a thermally stable substrate in a layer thickness of 0.5 to 7 mm by means of a burner by plasma-jet spraying or by flame spraying. The layer applied is then sintered for a time of not less than 40 hours at a temperature of 842.degree. to 848.degree. C. The layer is cooled to a temperature of 550.

Abstract: A process is provided for forming an oriented thick film superconducting coating on a polycrystalline substrate. The coating includes at least two highly oriented compounds ofBi.sub.a Sr.sub.b Ca.sub.c Cu.sub.d O.sub.x (BSCCO)wherein, in one component, a is 2, b is 2, c is 1, d is 2, and x is 8 and, in another component, a is 2, b is 2, c is 0, d is 1, and x is .apprxeq.6. The process comprising applying a powdered mixture prepared from BiO.sub.3, SrCO.sub.3, CaCO.sub.3, and CuO onto a polycrystalline substrate; rapidly heating the resultant coated substrate to a temperature of from about 1000.degree.-1100.degree. C. for a period of from about 30 minutes, thereby melting the powder and forming a thick film coating; rapidly quenching the coated substrate below which phase transition occurs; and annealing the resultant coated substrate by heating in an atmosphere of an oxygen-containing gas to a temperature of from about 850.degree.-870.degree. C.

Abstract: The present invention pertains to an information recording medium for recording audio information, visual information, data information and so on and also to information recording and reproducing methods for recording and reproducing information on and from the information recording medium for the purpose of improving the recording density. In the present invention, information can be recorded in high density by recording, on the information recording medium comprising a base (1) and an information recording layer (10) formed on the base (1) and made of high temperature superconductive material, information in the form of a fine pattern of high temperature superconductive regions (12) and normal electroconductive regions (11). The recording of the information is carried out by radiating an oxygen ion beam to the information recording layer and controlling the amount of oxygen, contained in the high temperature superconductive material, to a predetermined value.

Abstract: A method is provided for forming a thin film of an oxide superconductor on a substrate by laser ablation. Energy distribution in the section of a laser beam is homogenized within 10%. The homogenized laser beam is applied onto a target. A thin high-quality film of material ablated from the target is thus formed on a substrate which is arranged to face the target.

Abstract: An Improved method of manufacturing superconducting ceramics in the form of a thin film are described. The thin film is first formed of a superimposed structure composed of three films which contain a rare earth metal, an alkalline earth metal and copper respectively. Then the superimposed thin film is fired to convert to a superconducting film.

Abstract: A process for making a superconducting Tl--Pb--Sr--Ca--Cu--O thin film comprised of at least one phase of the formula Tl.sub.0.5 Pb.sub.0.5 Sr.sub.2 Ca.sub.1+n Cu.sub.2+n O.sub.7+2n where n=0, 1 or 2. The process comprises sputtering an oxide film onto a dielectric substrate from an oxide target containing preselected amounts of Tl, Pb, Sr, Ca and Cu, and heating an oxygen-containing atmosphere in the deposited film in the presence of a source of thallium oxide and lead oxide and cooling the film.

Abstract: A superconducting thin film of Bi-containing compound oxide deposited on a substrate, a buffer layer made of Bi.sub.2 O.sub.3 being interposed between the superconducting thin film and the substrate.

Abstract: A method of forming a superconducting oxide material comprises the steps of forming of a superconducting oxide material into a thin film on a film-forming surface portion, creating a plasma to form an activated oxygen atmosphere, subjecting the thin film to a magnetic field through the thickness of the thin film, thereby injecting the activated oxygen into the thin film so that crystals of the superconducting oxide material are aligned parallel or perpendicular to the film-forming surface portion.

Abstract: Improvement in a method for preparing a superconducting thin film of compound oxide on a substrate (6) by laser evaporation technique. A rear surface of a target (7) used is cooled forcedly by a cooling system (9) during film formation.

Abstract: A Bi-Sr-Ca-Cu-O-type superconductive film is formed on an MgO (100) single crystal substrate by the chemical vapor deposition method at a film formation speed of 780.degree. C. or less and a film formation speed of 1.0 nm/min or more, and exhibits an a-axis or b-axis preferential growth with respect to the substrate surface.

Abstract: In a method of forming an oxide superconductor/semiconductor junction between an oxide superconductor and a semiconductor containing bismuth or thallium, an atomic layer of silver of no more than 3 atoms thickness is formed by vapor deposition of silver on the surface of the semiconductor, an atomic layer of bismuth or thallium of no more than 3 atoms thickness is formed by vapor deposition of bismuth or thallium on the silver layer, the double atomic layer consisting of silver and bismuth or of silver and thallium are heated to form a layer wherein the atoms of silver and bismuth or silver and thallium are arranged regularly on the surface of the semiconductor, and the oxide superconductor is formed to a specified thickness on the regularly arranged layer.

Abstract: An outer surface of a superconducting film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. is protected with a protective layer which is composed of any one of (i) oxide of metal such as MgO, CaO, SrO etc, (ii) carbide such as SiC, or (iii) nitride such as BN.

Abstract: In order to prepare a good quality crystalline thin film of compound oxide superconductor on a silicon wafer, before the thin film of compound oxide superconductor is deposited on the silicon wafer, the silicon wafer is first heated at a temperature of higher than 900.degree. C. in a high vacuum of less than 10.sup.-6 Torr, then, a thin film of ZrO.sub.2 is deposited on the silicon wafer, and finally, the thin film of ZrO.sub.2 deposited on the silicon wafer is annealed in air at a temperature of 800.degree. to 850.degree. C.

Abstract: Method for preparing a superconducting thin film of compound oxide having improved properties on a substrate by laser evaporation technique. A target has a surface area which is smaller than an irradiation area of a spot of a laser beam used, so that whole surface of the surface is irradiated with the laser beam.

Abstract: In a process for preparing a thin film of a Bi-Sr-Ca-Cu-O based oxide superconductor by a laser ablation method in which a target is irradiated with a pulsed laser beam to grow a thin film on a substrate positioned to face the target, the improvement wherein the pulse rate of the pulsed laser beam is adjusted to 0.01-10 Hz and the application of the laser beam is interrupted at each time a superconducting thin oxide film is grown to a thickness equivalent to one half the unit cell or one unit cell of a Bi-Sr-Ca-Cu-O based oxide superconductor, whereby a thin film of the oxide superconductor is grown at an average growth rate of no more than 0.5 .ANG./sec.

Abstract: A method of forming a superconductor pattern in which at lest a pair of electrodes is formed on a substrate in spaced, facing relationship nd an oxide superconductor thin film having a unit lattice which assumes a laminar structure then is formed on the substrate, extending between and contacting the electrodes. The superconductor pattern obtained by this method suffers less degradation of the superconductor thin film, in comparison with that of patterns formed by the prior art methods, and the decrease of the critical current density as a function of increasing temperature is extremely small.

Abstract: In order to prepare an elongated oxide superconducting material which exhibits a high critical current density, a tape-type substrate (7) of silver, for example, formed by unidirectional solidification is prepared and an excimer laser beam (9) is applied to target (8) of an oxide superconductor to deposit atoms and/or molecules being scattered from the target (8) on the substrate (7), thereby forming an oxide superconducting film on the substrate (7).

Abstract: A superconducting conductor assembly using high temperature materials. A double-walled tubular structure has at least one helical strip of superconductive material on the inner wall of the inside tube. Brittle, non-ductile superconducting materials may be used. A coolant, typically liquid nitrogen, is circulated between the tubes to maintain the superconductor below the critical temperature of the superconductor. A buffer layer is preferably included between tube wall and superconductor. A plurality of alternating layers of buffer and superconductor may be used.

Abstract: A superconducting ceramic film is deposited on a substrate by sputtering. In virtue of the low thermal conductivity of ceramic, a laser beam is irradiated to the ceramic film in order to remove the irradiated portion by sublimation and produce a pattern on the ceramic film.

Abstract: Improvement in a process for preparing a-axis oriented thin film of high-Tc oxide superconducting material by laser evaporation method. Before the a-axis oriented thin film of oxide superconducting material is deposited by laser evaporation method, an under-layer having an a-axis orientation of the crystal of the same oxide superconducting material is deposited on a substrate previously by sputtering.

Abstract: There is provided in a process for depositing a metal oxide superconducting film on a substrate by laser sputtering, the improvement which comprises carrying out the deposition of the metal oxide superconducting film in the presence of a gas having higher oxidation potential than oxygen.

Abstract: Improvement in a process for depositing a thin film on an oxide superconductor thin film deposited previously on a substrate.A surface of the thin film of oxide superconductor is irradiated with laser beam pulses in high-vacuum of lower than 1.times.10.sup.-6 Torr before said another thin film is deposited thereon.The invention is applicable to fabrication of electronics devices such as Josephson element or superconducting transistors.

Abstract: A method for forming an insulating layer in an oxide high-temperature superconductor is described. The oxide high-temperature superconductor is exposed to radiation, whereby an interface showing superconducting characteristics and/or a weak link that is present at an interface in the said oxide high-temperature superconductor is transformed to a thin insulating layer.

Abstract: A method for forming a superconducting circuit is disclosed, comprising the steps of forming a mask pattern on a superconducting layer, forming a covering layer, containing a modifying element for superconductor, on the resultant structure, diffusing the modifying element for a superconductor, which is contained in the covering layer, into the superconducting layer to modify a corresponding location to a nonsuperconducting layer. A method for forming a multi-layer superconducting circuit is also disclosed, comprising sequentially repeating the same steps as set forth above over a substrate.

Abstract: A method makes a superconducting oxide thin film by irradiating an oxygen radical beam with necessary elements of the compound onto a substrate mounted in a molecular beam epitaxy system. The process can selectively form the superconducting oxide thin film on the substrate more efficiently in a direct reaction manner while maintaining the vacuum chamber of the molecular beam epitaxy system at a higher vacuum level.

Abstract: A [100] oriented ZrO.sub.2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y.sub.2 O.sub.3 thin film deposited on the ZrO.sub.2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y.sub.2 O.sub.3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO.sub.2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.

Abstract: A method for forming an oxide superconducting film is disclosed. A substrate member comprising an oxygen ion conductor and a material provided thereon having oxygen permeability and good fitting of lattice constant to the oxide superconducting film is prepared, and then an oxide superconducting film is formed on the substrate member. During the formation of the superconducting film, electric current is made to flow through the substrate member, whereby oxygen is supplied to the superconducting film.

Abstract: The present invention provides a process for producing a superconducting transistor on a surface of an insulating substrate. A pre-superconducting thin film contains a material that can be changed into a superconductor during subsequent processing but which is initially a non-superconductor. A thin film containing the material required by the pre-superconducting thin film is deposited in a preferred pattern on the pre-superconducting thin film. The assembly thus formed is heat treated to permit the material from the thin film to enter the pre-superconducting thin film, thereby forming superconducting regions in the pre-superconducting thin film in the preferred pattern. The superconducting regions form electrodes of the transistor.

Abstract: Monatomic layers each formed of a single metal are sequentially formed on a substrate using a molecular-beam epitaxy to form a multilayered metal film consisting of a plurality of types of metals, and sequentially with formation the monatomic layers, nitrogen dioxide gas as an oxidizer is supplied to oxidize the multilayered metal film. The same operation is repeatedly performed a predetermined number of times to form an oxide high-temperature superconductor thin film having a predetermined thickness.

Abstract: A method of forming a patterned in-situ photoconductive film on a substrate including providing a patterned photoresist layer on upper and lower metallic layers formed on a substrate. The patterned photoresist layer is used to form an opening in the upper layer. The pattern in the upper layer thereby has an opening having a geometry substantially similar to a desired pattern of photoconductive material to be formed on the substrate. A portion of the lower layer is removed to form cantilevered regions of the upper layer adjacent to the opening. Superconductive material is then deposited on the substrate by directing the material through the opening at an angle generally perpendicular to the substrate. The superconductive film on the substrate within the lower layer is coated with a polymer. The upper and lower layers and all superconductive material on those layers are removed to leave the polymer-encapsulated superconductive material on the substrate.

Abstract: A method of manufacturing a layer of a superconducting high-T.sub.c -material. For this purpose, an appropriate target material is deposited on a predetermined substrate by a pulsed laser with a wavelength in the ultraviolet range and, by applying a heat treatment and an oxygen treatment, the desired superconducting metal-oxide phase is formed with an ordered crystal structure. The heat treatment and oxygen treatment are performed simultaneously during the vaporizing step, whereby a power density of the laser radiation of over 3 J/cm.sup.2 at the target material is provided, the pulse power of the laser is at least 1.5 J/pulse, the temperature of the substrate is raised to 600.degree. C. to 800.degree. C., and an oxygen atmosphere of between 0.02 mbar and 1 mbar is provided.

Abstract: A process of preparing a superconducting thin oxide film includes irradiating a target containing Bi, Sr, Ca and Cu with a laser beam to prepare a thin film of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x oxide or a thin film of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.y oxide on a substrate. The process is characterized in that the target containing Bi, Sr, Ca and Cu in an atomic ratio of 2:2:2:3 is positioned to face the substrate, and the laser beam is irradiated to the target in an atmosphere having an oxygen partial pressure of 0.01-1 Torr while the temperature of the substrate is maintained in a given temperature range suitable for growing the respective superconducting thin oxide films.

Abstract: Disclosed herein is a method of and an apparatus for fabricating an oxide superconducting wire which comprises a tape-type long base material and an oxide superconducting film formed thereon. The oxide superconducting film is formed by laser ablation of applying a laser beam (2) onto a target (4) while translating a long base material (6) along its longitudinal direction and depositing atoms and/or molecules scattered from the target (4) on the base material (6).

Abstract: A laser beam (2) is applied to a target (1) of an oxide superconductive material, to deposit atoms and/or molecules which are scattered from the target (1) on a first portion (4) of a substrate (3) under an atmosphere containing oxygen for a start. Then, the substrate (3) is moved to deposit atoms and/or molecules scattered from the target (10) on a second portion, which is different form the first portion (4) of the substrate (3), under the atmosphere containing oxygen. At this time, the first portion (4) is subjected to oxygen annealing. These deposition steps are repeated until an oxide superconducting film of a desired thickness is obtained.

Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comGOVERNMENT RIGHTS IN INVENTIONThis invention was made with Government support under Contract No. N00014 88-0531 awarded by the Defense Advanced Projects Research Administration (DARPA). The Government has certain rights in this invention.

Abstract: An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, whereDPM is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula:CH.sub.3 C(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3THF is tetrahydrofuran represented by the chemical formula: ##STR1## DMF is dimethylformamide represented by the chemical formula:HCON(CH.sub.3).sub.2M is an element chosen from the list:Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb and Lu,and n is any integer. The starting gas sources are introduced into a growth tank after gasification together with at least one of the gases O.sub.2, O.sub.3, or N.sub.2 O, and the oxide film being formed on a substrate placed in said growth tank.

Abstract: A laser ablation method for forming a fluorinated superconducting Y-Ba-Cu-O thin film on a sapphire substrate is disclosed, which comprises the steps of: (1) depositing a barrier layer of BaAl.sub.2 O.sub.4 on the sapphire substrate; (2) placing the coated substrate and a tagret in a deposition chamber, said target including fluorine, barium, yttrium, copper and oxygen; (3) providing a background atmosphere including at least partial pressure of O.sub.2 within the chamber; (4) heating the coated substrate to a temperature above ambient; (5) laser-ablating the target material onto the heated substrate while controlling the partial pressure of O.sub.2 in said background atmosphere and the temperature of said heated substrate so that the as-deposited thin film on said substrate is superconductive.

Abstract: The present invention provides a method of depositing a passivation layer on the surface of a superconducting ceramic oxide wherein the passivation layer is a layer of an oxide of Al, Bi, Si or Al-W.

Abstract: A high temperature superconducting ceramic copper oxide perovskite with enhanced upper critical field (H.sub.c2) and increased current carrying capacity caused by exposure to gamma radiation.