Abstract: Functional optical materials for optical systems that are typically useful in optical waveguides, optical switching systems, optical modulators, optical computing systems and the like. Included are polymer systems and electrooptical chromophores. Polymers are thermoplastic and/or thermosetting polymers and are blended or co-polymerized with the electrooptic chromophore. The thermoplastic or thermosetting polymer selected from an acrylic/methacrylic, polyester, polyurethane, polyimide, polyamide, epoxy resin, or hybrid (organic-inorganic) or nanocomposite polyester polymer. The electrooptic chromophore is selected from a substituted aniline, substituted azobenzene, substituted stilbene, or substituted imine. Methods for improving adhesion promotion for the various novel materials are also provided.

Abstract: The present invention relates to a copolymer resin for a photoresist used in far ultraviolet ray such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of mono-methyl cis-5-norbonen-endo-2,3-dicarboxylate unit to a structure of norbornene-maleic anhydride copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and settles the problem of offensive odor occurred in the course of copolymer resin synthesis. Further, as the resin composition can be easily controlled due to the molecular structure, the resin can be manufactured in a large scale.

Abstract: A positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B′) an onium salt compound which generates an acid when irradiated with active ray or radiation and (C) at least one of fluorine-based and/or silicon-based surface active agent and nonionic surface active agent or a positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B) a compound which generates an acid when irradiated with active ray or radiation, and (D) a mixed solvent containing at least one propylene glycol monoalkyl ether carboxylate and at least one of solvents selected from the group consisting of propylene glycol monoalkyl ether, alkyl lactate and alkoxyalkyl propionate and solvents selected from the group consisting of &ggr;-butyrola

Abstract: The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF(249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and W is 1 or 2.

Abstract: A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 and R15 are acid labile groups, and at least one of R6 to R9 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are H or alkyl, at least one of R10 to R13 is a monovalent hydrocarbon group containing a —CO2— partial structure, and the reminders are H or alkyl, R14 is a polycyclic hydrocarbon group or polycyclic hydrocarbon-containing alkyl group, Z is a trivalent hydrocarbon group, k=0 or 1, x is>0, a, b, c and d are≧0, satisfying x+a+b+c+d=1. A resist composition comprising the polymer has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.

Abstract: A polymer comprising units of formulas (1) and (2) and having a Mw of 1,000-500,000 is provided. R1 is H, CH3 or CH2CO2R3, R2 is H, CH3 or CO2R3, R3 is alkyl, R4 is halogen or acyloxy, alkoxycarbonyloxy or alkylsulfonyloxy group which may be substituted with halogen, R5 is H or alkyl, R6 is an acid labile group, Z is a single bond or a divalent hydrocarbon group, k is 0 or 1, and W is —O— or —(NR)— wherein R is H or alkyl. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV rays.

Abstract: A process for preparing a grafted polymer in which a substrate polymer is graft reacted with a nitrogen-containing grafting monomer in the presence of a free radical initiator and an amide coupling inhibitor that reduces polymer crosslinking during the graft reaction.

Abstract: The present invention relates to a polymer with at least one pericyclic protective group such as 2-methyl-2-bicyclo[2,2,1]heptanyl. The resist composition containing the polymer can be used as a chemically amplified resist and exhibits strong etch resistance. In addition, a line-and-space pattern of 0.1 &mgr;m pitch can be resolved successfully using the resist composition.

Abstract: Provided is a dye composition for keratinous fibers, which comprises (A) a hydrolyzate of a lower alkyl vinyl ether/maleic anhydride copolymer partially crosslinked with a terminal unsaturated diene compound, or a monoalkyl ester of the hydrolyzate; and (B) a dye. The dye composition for keratinous fibers according to the present invention has a stable and appropriate viscosity even in a wide pH range and even in a system containing a salt or solvent at a high concentration; and has excellent usability and dyeing properties. It is particularly suited for use with an acid dye.

Abstract: A functional polymer having active and stable functional groups useful for separation or reactive processes in chemical manufacture or analysis is disclosed. The polymer comprises repeat units having structures corresponding to cycloaddition products of polymeric 1-(vinylphenyl)ethylene with electron-poor alkenes. A process for preparing the functional polymer does not require radical reactions or the exclusion of oxygen. The properties of the polymeric matrix produced can be adjusted by modifying the polymer. For example, the polymer particle size and shape, porosity, swellability, surface area, and number, type and distribution of functional groups may be controlled.

Abstract: Polymerization of a fatty acid or fatty acid derivatives containing conjugated double bonds and alkenes or alkynes containing electron acceptor substituents provides compositions useful as coatings, adhesives, sealants, fillers and the like.

Abstract: There are provided a photosensitive polymer having a copolymer of alkyl vinyl ether and a resist composition containing the same. The photosensitive polymer includes a copolymer of alkyl vinyl ether and maleic anhydride, represented by the following structure: wherein X is one of a linear alkyl vinyl ether and a cyclic alkyl vinyl ether, which are respectively represented by the structures wherein y is one of the integer values 1 through 4, R1 is one of a hydrogen atom and a methyl group, R2 is a C1 to C20 hydrocarbon, and R3 is one of a hydrogen atom, a C1 to C3 alkyl group and an alkoxy group.

Abstract: Disclosed are cyclic phosphate esters of fumarate- or maleic acids suitable for use as a comonomer, capable of being copolymerized with a monovinylidene aromatic compounds to impart flame resistant properties to the resultant copolymers.

Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: 1

Abstract: A photoresist polymeric compound includes a monomer unit represented by following Formula (I): 1

Abstract: The present invention relates to a non-aqueous denture adhesive composition comprising a safe and effective adhesive amount of a denture adhesive; a safe and effective amount of an anticalculus agent; and a non-aqueous denture adhesive carrier; wherein the anticalculus agent is a material effective in reducing calcium phosphate mineral deposition related to calculus formation. The present invention further relates to a method of delivering an anticalculus agent to the oral cavity and teeth, by applying the above composition to dentures, directly to the oral cavity, or applying it to both, and thereafter securing the dentures to the oral cavity.

Abstract: The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility.

Abstract: A chemical amplification resist composition comprising an acid sensitive copolymer wherein the protecting group of a protected carboxyl group bonded to the side chain of a first monomer unit is represented by the following formula (I): where R1 represents hydrogen or another substituent, L represents a linking group and n is an integer of 1 to 4, and a second monomer unit has an acidic functional group protected with an acid-unstable protecting group, bonded to its side chain. It can be used to form fine resist patterns that have practically usable sensitivity and undergo no swelling.

Abstract: A process for producing a copolymer of an &agr;,&bgr;-unsaturated monomer having at least one pendant unit selected from a carboxylic acid group and derivatives thereof, and a copolymerizable monomer is described in which the process is carried out in a single solvent which is particularly an aromatic solvent. Processes of controlling the reaction and the particle size of the polymer produced are also described.

Abstract: The present invention relates to novel monomers and their polymers, which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10)alkyl, substituted or non-substituted (C1-C10)ether, substituted or non-substituted (C1-C10)ester, or substituted or non-substituted (C1-C10)ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

Abstract: The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R1, R2, R3, R4, R5, R6 and k are as defined herein.

Abstract: The present invention is directed to copolymers of norbornene and functional group containing norbornene comonomers and processes for the preparation thereof. These polymers may be random, alternating or block copolymers or terpolymers, etc.

Abstract: The invention provides a polymer comprising recurring units of formula (1-1) or (1-2) wherein k is 0 or 1, m is 0, 1, 2, 3 or 4, and n is 1 or 2 and having a weight average molecular weight of 1,000 to 500,000. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.

Abstract: The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.

Abstract: The present invention provides photoresist polymers and photoresist compositions comprising the same. The photoresist polymer is represented by the following Chemical Formula 5. Photoresist compositions containing the polymers of the present invention have superior transmittance at 157 nm wavelength, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and are therefore suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, X, Y, V, W, i, j, w, x, y and z are as described herein.

Abstract: The present invention relates to a silicon-containing vinyl copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit with an acid-labile group, and a vinyl repeating unit with a silicon-containing group. The silicon-containing vinyl copolymer is suitable for use as a top layer resist in a bilayer resist system.

Abstract: The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF (249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray.

Abstract: Acid modified C5 hydrocarbon resins are disclosed. The resins are predominantly piperylene resins with isobutylene. The resins are acid modified with from about 0.1 to 30 weight percent maleic anhydride to provide an acid-modified resin with a acid number from about 30 to about 170 mg KOH/g resin. The acid-modified resins have a mettler drop softening point from about 40° C. to about 140° C. The acid modified resins are useful as a natural rosin alternative.

Abstract: The present invention relates to a silicon-containing vinyl copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit with an acid-labile group, and a vinyl repeating unit with a silicon-containing group. The silicon-containing vinyl copolymer is suitable for use as a top layer resist in a bilayer resist system.

Abstract: A radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=l and 0.4≦o≦0.

Abstract: The present invention relates to a copolymer resin for a photoresist used with far ultraviolet rays such as KrF or ArF.

Abstract: A continuous, solvent-free process for obtaining solvent-free, fine white powders of high molecular weight alternating terpolymers of maleic anhydride, a C1-C4 alkyl vinyl ether and isobutylene, without odor or taste.

Abstract: This invention relates to a chemically amplified positive photoresist composition comprising a multi copolymer copolymer whose repeating units is represented by the following formula I, a low molecular additive represented by the following formula 2 or 3, an acid generator and a solvent wherein the repeating units comprising X and Y are independent monomers, respectively, selected from the group consisting of the following formulae (II), (III) and (IV):

Abstract: A process for producing a copolymer of an a, &bgr;-unsaturated monormer having at least one pendant unit selected from a carboxylic acid group and derivatives thereof, and a copolymersable monomer is described in which the process is carried out in a single solvent which is particularly an aromatic solvent. Processes of controlling the reaction and the particle size of the polymer produced are also described.

Abstract: A polymer useful in oral care compositions which has a reactive group covalently bonded to a bactericide, flavorant and/or essential oil compound, said bond being hydrolyzable in aqueous solution to slowly release said compound into said composition.

Abstract: The invention relates to polyfunctionally reactive polymeric substances which contain at least two structural units of the general formulae (I) and/or (II) in the molecule and whose polymer backbone linkages are C—C bonds, ether bonds, urethane bonds, amide bonds, ketone bonds or combinations thereof. The substances are useful as binders for various applications.

Abstract: A composition is provided which comprises catalase modified with a copolymer (A) and a second copolymer, i.e., copolymer (B). The copolymer (A) comprises an alkenyl ether, maleic anhydride, and at least one monomer selected from the group consisting of unsaturated carboxylic acid, vinyl compound and olefin, and copolymer (B) consists of an ethylenically unsaturated monomer and a monomer selected from the group consisting of a monomer having a carboxyl group and a monomer having an acid anhydride group, or a salt of the copolymer (B).

Abstract: The present invention refers to a paper surface sizing composition comprising a copolymer having: a) structural units derived from ethylenically unsaturated hydrocarbons; structural units derived from monomers selected from esters of ethylenically unsaturated mono-carboxylic acids, half-esters of ethylenically unsaturated dicarboxylic acids, allylethers and vinylethers and mixtures thereof; optionally c) structural units derived from ethylenically unsaturated monomers selected from monocarboxylic acids as well as salts and amides thereof, dicarboxylic acids as well as salts, amides and half-amides thereof, and cyclic anhydrides and imides of dicarboxylic acids and mixtures thereof; and optionally d) structural units derived from alkyl or amino-substituted alkyl acrylates or methacrylates with the proviso, that if no structural units c) are present, the structural units b) are derived from monomers selected from half esters of ethylenically unsaturated dicarboxylic acids.

Abstract: The invention includes polymers that contain a heterocyclic ring, preferably an oxygen- or sulfur-containing ring. The heterocyclic ring is preferably fused to the polymer backbone. The invention also provides photoresists that contain such polymers, particularly for imaging at short wavelengths such as sub-200 nm.

Abstract: Film-forming, functionalized polymers having 1,2-dicarboxylic acid monoester groups have at least two polymer units, one of which is acid-labile and hydrolysis-stable and the other is thermally stable. These polymers are used in particular in photoresists.

Abstract: A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.

Abstract: The present invention relates to a polymer prepared by synthesizing monomer having a derivative of cholic acid, deoxycholic acid or lithocholic acid bonded to norbornene, and then homopolymerizing these monomer, copolymerizing these monomer with maleic anhydride, or copolymerizing these monomer, maleic anhydride and 2-hydroxyethyl 5-norbornene-2-carboxylate and/or 5-norbornene-2carboxylic acid, and its use as a photoresist. The polymer synthesized according to the present invention is dissolved in a solvent, together with a photo-acid generator, and filtered through a filter to make a photoresist solution which can be used to produce a lithographic image on a silicon wafer.

Abstract: The invention is directed to polymers containing a repeating unit derived from a norbornene sulfonamide. These may be addition polymers which include copolymers with one or more comonomers such as norbornene, ethylene, an acrylate or sulfur dioxide or carbon monoxide. Said monomers may be polymerized using single or multicomponent Group VIII catalysts. The norbornene sulfonamides can also form ROMP polymers using known metathesis catalysts. Preferably the ROMP polymers may be hydrogenated to give more stable polymers.

Abstract: Solvent-free, free-flowing, fine white powders of a copolymer of maleic anhydride and a C1-C4 alkyl vinyl ether having a specific viscosity of about 0.5 to about 5 (1% wt/v in methyl ethyl ketone, 25° C.) and substantially without residue, odor or taste. A solvent-free process of polymerizing the monomers in the presence of 0.01 to 1.9% acetaldehyde also is described.

Abstract: A polymer useful as an inorganic pigment dispersant is provided. The polymer is derived from monomers consisting essentially of an ethylenically unsaturated aromatic monomer, an ethylenically unsaturated dicarboxylic acid monomer, and an ethylenically unsaturated monocarboxylic acid monomer. The total amount of said ethylenically unsaturated acid monomers is sufficient to permit said polymer to associate with an inorganic pigment in an aqueous medium in a manner which disperses said inorganic pigment in said aqueous medium to form a stable aqueous dispersion of said inorganic pigment, and the amount of said ethylenically unsaturated aromatic monomer is sufficient to reduce the water sensitivity of a dried coating of a latex paint comprised of said stable aqueous dispersion of said inorganic pigment. A process of preparing a polymer useful as an inorganic pigment dispersant and a method of preparing an inorganic pigment dispersion useful in the preparation of latex paints are also provided.

Abstract: A copolymer represented by the formula I and a chemical amplification resist containing the copolymer, which can be easily controlled in sensitivity by regulating the content and kind of the norbornene derivatives in the matrix polymers in addition to being superior in adherence to substrate and dry etch resistance: ##STR1## wherein, X is selected from the group consisting of the following general formulas II, III and IV; and, l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=1 and 0.4.ltoreq.o.ltoreq.0.

Abstract: A chemically amplified photoresist composition, having a large etching resistance and excellent adhesion and contrast characteristics, includes a polymer represented by formula (1): ##STR1## wherein R.sub.1 is hydrogen, --OH, --COOH, or aliphatic hydrocarbon having a C.sub.1 -C.sub.20 polar functional group, R.sub.2 is a t-butyl group, a tetrahydropyranyl group or a 1-alkoxyethyl group, l, m and n are integers, l/(l+m+n) equals 0.0 to 0.4, m/(l+m+n) equals 0.5, n/(l+m+n) equals 0.1 to 0.5, and the weight average molecular weight of the polymer is in the range of 3,000 to 100,000.

Abstract: A photosensitive polymer represented by the following formula, and a resist composition including (a) a photosensitive polymer represented by the following formula: ##STR1## where R.sub.1 is a C.sub.1 to C.sub.20 aliphatic hydrocarbon, R.sub.2 is t-butyl, tetrahydropyranyl or 1-alkoxy ethyl, 1/(1+m+n) is from 0.0 to about 0.4, m/(1+m+n) is 0.5, and n/(1+m+n) is from about 0.1 to about 0.5, and (b) a photoacid generator (PAG).

Abstract: A photoresist including a copolymer prepared from bicycloalkene derivative, maleic anhydride and/or vinylene carbonate, which has molecular weight ranging from about 3,000 to 100,000. The photoresist can be used for submicrolithography employing deep ultra violety as a light source. In addition to being of high etch resistance and thermal resistance, the photoresist has good adhesiveness and can be developed in a TMAH solution.

Abstract: A polymeric amphipathic stabilizer is formed of hydrophobic monomer units and hydrophilic monomer units which comprise carboxylic free acid or acid salt units and glycidyl or anhydride units. The glycidyl or anhydride units react onto reactive groups on polymer particles when dispersed in non-aqueous liquid and provide improved stability when the particles are subsequently dispersed in liquid electrolyte.