Abstract: Apparatus and method for counting the number of inserts pulled each cycle from each hopper of an inserting machine. The caliper is a precision mechanism for accurately counting single, double, triple, quadruple and even quintuple fed inserts as well as misses. The caliper system compensates for a wide range of variables and countered in conventional newspaper inserting machines operating at 400 cycles per minute. The set-up of the caliper system is highly simplified due to the system software which, in addition to while proving a learn zero and learn insert mode, further recognizes operational variables which occur during operations such as fluctuation of paper basis weight and ink build up on the caliper wheel. The system provides self-checks to verify operational accuracy.

Abstract: A method for determining a wafer characteristic, such as the surface quality of a film formed on the wafer, using a film thickness monitor is described. In one embodiment, the method comprises the following steps. A measured spectrum for a processed wafer is generated. A set of parameters is chosen and then used to generate a calculated spectrum. The measured spectrum is compared to the calculated spectrum to determine if the two spectra match. If the two spectra do not match or the degree of nonconformity between the two spectra is greater than an acceptable error value, then there is probably a defect with the processed wafer. For example, the film formed on the wafer may have a nonuniform or hazy surface quality.

Abstract: A system for precisely locating an absolute position of a target structure disposed at a known relative position on a substrate, where the substrate has devices in a pattern. Input means receive information, including a substrate size, a pattern offset, a device size, the known relative position of the target structure, and a target structure shape. Staging means receive the substrate in a known orientation. Processing means are used to locate several positions. A center position of the substrate is located from the substrate size and the known orientation of the substrate. A first intermediate position is located by combining the center position of the substrate with the pattern offset. A second intermediate position is located by combining the first intermediate position with at least a first component of the device size. A third intermediate position is located by combining the second intermediate position with the known relative position of the target structure.

Abstract: In a method of evaluating the reliability of a thin film transistor (TFT), time coefficient &bgr;, voltage coefficient d and temperature coefficient &phgr;0 are experimentally produced from −BT stress tests, and the life of a TFT under −BT stress conditions is evaluated using the following expression: τ = t 0 ⁡ ( Δ ⁢   ⁢ V th ⁢   ⁢ τ

Abstract: An image recognition system using a light-section method which has versality and does not shorten the service life of light projector means. Projection of light from a light source onto a workpiece is continued between the time when a measuring command is issued and the time just after light has been converged by the automatic aperture control mechanism of a television camera. An image processing unit processes an image picked up by the television camera just after the convergence of light by the automatic aperture control mechanism so as to obtain three dimensional configuration data on the workpiece.

Abstract: Eddy currents are generated in an object constructed of a conductive material by transmitting an electromagnetic signal to the object and detecting electromagnetic signals generated by eddy currents induced in the object, and an electromagnetic signal V(t) is described by a product of two factors F and G(t), wherein F is a function of the geometry and electrical and magnetic properties of the material and G(t) is a function of geometry of the material, the electrical and magnetic properties of the material, the thickness perpendicular to the surface of the material, and time.

Abstract: A coating thickness gauge is provided with a facility to store one or more zero offset values and to automatically subtract a chosen zero offset value from a measured coating thickness value. The gauge may be used to conveniently determine the thickness of coatings applied to rough surfaces using the zero offset calibration method where the gauge is provided with a key or keys. In order to prevent accidental adjustment of the calibration or any other important operational parameter of the gauge said key or keys must be depressed and held for a predetermined period of time.

Abstract: In a method of evaluating the reliability of a thin film transistor (TFT), time coefficient &bgr;, voltage coefficient d and temperature coefficient &phgr;0 are experimentally produced from −BT stress tests, and the life of a TFT under −BT stress conditions is evaluated using the following expression: τ = t 0 ⁡ ( Δ ⁢   ⁢ V th ⁢   ⁢ τ

Abstract: A method for controlling thicknesses of layers formed by a deposition apparatus for semiconductor device fabrication includes retrieving a latest process record for a latest batch from a process database for a deposition apparatus. Each process record in the database describes one layer deposition process using the deposition apparatus operating on one batch. A batch includes a plurality of lots, each lot having a workpiece. The method further includes receiving a latest array of thicknesses, each thickness from one lot of the latest batch. Then an automatic corrected setting is calculated. If the automatic corrected setting is within a specification setting range, the specification is met and the method continues. A next batch signal is input if the layer deposition process may proceed on a next batch, and the automatic corrected setting is displayed. A predetermined correction command is input to indicate a predetermined corrected setting is to be used instead of the automatic corrected setting.

Abstract: A light scattering Mueller matrix for an irregular particle placed on a plane interface is derived using the process of the present invention. The relationships discovered in this derivation are unique because they are independent of the particle shape, and only depend on the substrate refractive index (which is known), the wavelength and angle of incidence of the incident light (also known), and the approximate size of the scatterer (unknown). All that is required to estimate the size of the contaminant is to vary the scatterer size parameter until the model calculations of the light scattering Mueller matrix elements match the experimentally measured light scattering Mueller matrix elements. The probe of the present invention may be used as follows. First, the polarization state of the scattered light can be determined by measuring the Mueller matrix or Jones elements. Next, a "best fit" is made between these elements and the model.

Abstract: A method for determining and generating a computer generated picture of the pattern of the thickness of a selected layer of a multi-layer coating on a workpiece at selected locations and taken at a plurality of timed segments, by a Pelt Gage.

Abstract: Computer-based methods and systems for facilitating the inspection of a vehicle to detect the presence of prior damage and problems with previous repair are provided. Exemplary embodiments provide an inspection facilitator, which includes an inspection engine and an inspection interface. The inspection engine and inspection interface are implemented as an expert system, which directs a technician or apparatus to perform a uniform inspection process. The inspection facilitator, after receiving vehicle specific information, first directs and guides an inspection of the underbody of the vehicle to detect gross level damage or repair. The inspection facilitator then dynamically directs and guides an inspection of the outerbody of the vehicle based upon the nonconformities indicated in response to each directed inspection task.

Abstract: A sheet profile for bank formation is controlled by using a system including a die and two rotational formation rolls arranged substantially to be parallel to each other at a downstream side of the die, in which a plastic material heated and plasticized is fed through a discharge port of the die in shape of sheet to an upstream side of a gap between the two formation rolls and a sheet is formed so as to provide a predetermined sheet profile by passing through the gap between the two rolls under pressure while forming a bank of the plastic material at the upstream side of the roll gap.

Abstract: A method of controlling a pulsed laser deposition process. A spectroscope is used to acquire Raman response data from a substrate as it is being coated with a film. A processor compares the response data to reference data, which may represent an uncoated substrate or an ideal film. In the former case, the attenuation of the response signal is used to indicate film thickness. In the former case, the peak characteristics of the film can be used to indicate its chemical properties. The processor may be further programmed to compare deposition rates, reaction rates, and transport rates to model data. The processor makes decisions regarding equipment control based on these comparisons. It may access heuristic rules to aid in decision making where several factors are involved.

Abstract: A method for determining changes in the average wall thickness or the mean radius of a pipe or tube using ultrasonic and/or magnetostrictive wave probes by analyzing the dispersive behavior of waves traveling in the tube wall volume. The method examines certain wave propagation modes and identifies a cut-off frequency that is characteristic for a particular wall thickness or tube diameter. This method permits the rapid and accurate inspection of a length of pipe or tube from a single location on the inside diameter of the pipe and permits a comparison of data gathered with similar data for the structure in its original condition. Changes in the cut-off frequency, indirectly determined by the method of the present invention are inversely related to changes in the wall thickness and/or the mean radius for the cylindrical structure. In this manner the method of the present invention provides a mechanism for determining the remaining service life for such pipes and tubes.

Abstract: A system for calculating an output of a multi-stage forming process using a model of the forming process with which the output of the forming process is determined as a function of properties of the forming process. Selected properties of the forming process are determined using a neural network-based information processing arrangement.

Abstract: A modular coating thickness gauge includes a probe which generates a signal representative of coating thickness, a PCMCIA card connected to the probe for converting the signal into a standard PCMCIA output format, and a portable computing unit for receiving the signal via the PCMCIA card. The gauge allows the on-site user to alternately record coating thickness measurement data and descriptive textual or graphical data relating to each coating thickness measurement.

Abstract: A method and apparatus for measuring a reference sample in order to collect a reference characteristic, without moving the reference sample, is disclosed. In one embodiment, the method of the present invention comprises the following steps. An operator places a cassette of unprocessed wafers into a processing chamber of a processing tool that also includes a holding chamber. While the wafers are being processed, the holding chamber, which is coupled to a measurement tool, measures the reference sample that is mounted on a stage in the holding chamber. The resulting reference characteristic value (e.g., spectrum to determine film thickness) is then stored in the measurement tool's computer system. After a film is grown/formed on the wafers, the processed wafers are moved one by one into the holding chamber to be measured. A first wafer is placed on the stage in the holding chamber and a characteristic value for the first processed wafer is obtained using the measurement tool.

Abstract: A sensor arrangement (1) comprising at least one measuring coil (2), at least one voltage source (3) for the measuring coil (2), and an evaluation unit (4) with means for detecting, processing, and evaluating measured signals. This sensor arrangement (1) is used to measure distances and thicknesses substantially independently of the material involved, without the user having to know the physicomathematical relations between the influencing quantities and the measured values. In order to evaluate the measured signals, the evaluation unit (4) of the sensor arrangement comprises a neural network (5) with an input layer, at least one hidden layer, an output layer, and connection weights for the individual layers. The connection weights are determined and stored in a learning phase by measurements taken on a plurality of different suitable learning objects with known actual values.

Abstract: A method for correcting a thin-film formation program of semiconductor device includes the steps of measuring a thin-film thickness formed by thin-film formation equipment controlled by a thin-film formation program while cooling a wafer on which a thin-film has been formed; transforming the measured thickness into an electrical signal (d.sub.m); transforming a target thickness into a standard electrical signal (d.sub.0); comparing the electrical signal (d.sub.m) with the standard electrical signal (d.sub.0), and outputting a first signal to the thin-film formation equipment if the electrical signal (d.sub.m) is less than the standard electrical signal (d.sub.0) and outputting a second signal to the thin-film formation equipment if the electrical signal (d.sub.m) is greater than the standard electrical signal (d.sub.0). The first signal increases, and the second signal decreases the process variables of thin-film formation program.

Abstract: A method and apparatus for determining the thickness of at least one layer superimposed on a substrate, at least one of the layers or the substrate being a conductor of electricity. The method includes the steps of generating an electromagnetic alternating field in the vicinity of the outer most layer with a coil in order to cause any currents to be generated in the conductor which act upon the alternating field. The frequency of the alternating field is adjusted to at least two different frequencies and is measured at these frequencies. The thickness of the layers is then determined based on the measurements and the electromagnetic properties of the substrate and the layers.