Abstract: An example apparatus may perform concurrent threshold voltage compensation in a memory array with distributed row redundancy. The example apparatus may include a memory cell array having a mat having a plurality of row sections that each include respective prime memory cell rows and a respective redundant memory cell row. The example apparatus may further include a row decoder configured to receive an access command and a prime row address. The row decoder may be configured to, in response to a determination that the prime row address matches a defective prime row address, concurrently initiate a threshold voltage compensation operation on both of a prime row of the respective plurality of prime rows of memory cells of a first row section of the plurality of row sections corresponding to the prime row address and the respective redundant row of a second row section of the plurality of row sections.

Abstract: Systems and methods to perform multiple row repair mode for soft post-packaging repair of previously repaired data groups are disclosed. The devices may have activation circuitry that includes a mode register bit or a control antifuse that sends an input signal upon activation. The devices may also include a logic element that receives the input signal and sends, upon receiving the input signal, a configuration signal that enables a multiple row repair mode.

Abstract: One embodiment provides a memory module that enables online repair of defective memory cells. The memory module includes a memory array storing data, a self-test controller coupled to the memory array and configured to perform a self-test on a region within the memory array without interrupting operations of the memory module, and a memory-repair module configured to repair a defective memory cell identified by the self-test controller.

Abstract: A memory apparatus comprising: a cell array comprising multiple first and second word lines, a fuse array configured to substitute a selection word line of the multiple first word lines with the multiple second word lines, a fail determination unit configured to determine, as a fail word line, a word line matched with a first condition during an access operation for the multiple first word lines and to determine a fail grade of the fail word line based on a second condition, an information storage unit configured to store a physical address, fail grade and access count of the fail word line as determination information for the fail word line, and a rupture operation unit configured to select the selection word line from the fail word lines based on a result of the analysis of the determination information, and perform rupturing the selection word line into the fuse array.

Abstract: Methods of testing memory devices are disclosed. A method may include reading from a number of memory addresses of a memory array of the memory device and identifying each memory address of the number of addresses as either a pass or a fail. The method may further include storing, for each identified fail, data associated with the identified fail in a buffer of the memory device. Further, the method may include conveying, to a tester external to the memory device, at least some of the data associated with each identified fail without conveying address data associated with each identified pass to the tester. Devices and systems are also disclosed.

Abstract: A memory evaluation method and apparatus are provided. The method includes: determining a health degree evaluation model indicating a relationship in which a health degree of a memory changes with at least one health degree influencing factor of the memory; obtaining at least one running parameter value corresponding to each of the at least one health degree influencing factor; separately matching the at least one running parameter value corresponding to each health degree influencing factor to the health degree evaluation model, to obtain the health degree of the memory; and outputting health degree indication information which indicate whether the memory needs to be replaced. Therefore, the memory is not faulty and the health degree of the memory is a relatively low, a user is prompted to replace the memory.

Abstract: A controller includes an interface and storage circuitry. The interface is configured to communicate with a memory device that includes multiple memory cells organized in memory blocks. The memory device supporting programming of the memory cells with enabled or disabled program-verification. The storage circuitry is configured to disable the program-verification, and program data to a group of the memory cells in a Single Level Cell (SLC) mode using a single programming pulse, to read the data from the group of the memory cells. In response to detecting a failure in reading the data, the storage circuitry is configured to distinguish between whether the memory cells in the group belong to a defective memory block or were under-programmed, and when identifying that the memory cells in the group were under-programmed, to perform a corrective action to prevent under-programming in subsequent program operations to the memory cells in the group.

Abstract: A magnetic tape device or system can store erasure encoded data that generates a multi-dimensional erasure code corresponding to an erasure encoded object comprising a code-word (CW). The multi-dimensional erasure code enables using a single magnetic tape in response to a random object/file request, and correct for an error within the single magnetic tape without using other tapes. Encoding logic can further utilize other magnetic tapes to generate additional parity tapes that recover data from an error of the single magnetic tape in response to the error satisfying a threshold severity for a reconstruction of the erasure coded object or chunk(s) of the CW. The encoding logic can be controlled, at least in part, by one or more iterative coding processes between multiple erasure code dimensions that are orthogonal to one another.

Abstract: A memory may include a first repair analysis circuit suitable for storing an input fail address when the input fail address is different from a fail address which is already stored in the first repair analysis circuit, and outputting the input fail address as a first transfer fail address when a storage capacity of the first repair analysis circuit is full; and a second repair analysis circuit suitable for storing the first transfer fail address when the first transfer fail address is different from a fail address which is already stored in the second repair analysis circuit.

Abstract: Provided is an electronic signature technique depending on a diametrically different algorithm from the existing asymmetric key infrastructure electronic signature technique which generates predetermined syndrome data based on a message to be transmitted a data receiving device and then detects an error vector for an electronic signature from the syndrome data by using a parity check matrix and then generates an electronic signature value based on an error vector for the electronic signature and transmits the generated electronic signature value to the data receiving device.

Abstract: A three-dimensional stacked integrated circuit (3D SIC) having a non-volatile memory die, a volatile memory die, and a logic die. The non-volatile memory die, the volatile memory die, and the logic die are stacked. The 3D SIC is partitioned into a plurality of columns that are perpendicular to each of the stacked dies. Each column of the plurality of columns is configurable to be bypassed via configurable routes. When the configurable routes are used, functionality of a failing part of the column is re-routed to a corresponding effective part of a neighboring column.

Abstract: The disclosure is directed to a memory storage device and an automatic error repair method thereof. In an aspect, the memory storage device includes a connection interface configured to receive a write command and a word line address associated with the write command, a memory array including a memory bank which contains an error correction code (ECC) detector, a plurality of memory cells controlled by a word line address, and a plurality of redundant memory cells controlled by a redundant word line address, a fuse blowing controller configured to receive the word line address to blow an electrical fuse of the word line address to enable the plurality of redundant memory cells, and a memory control circuit configured to transfer data from the plurality of memory cells through a bit line into the plurality of redundant memory cells in response to the electrical fuse having been blown.

Abstract: A method for checking storage units of flash memory of flash memory device includes: writing data into storage units; and performing data read operation to read data from storage units to compare read data with written data to check whether data is correctly written into storage units, and data read operation includes: performing sequential read operation to sequentially select first storage unit and to read data from first storage unit according to serial order numbers; determining whether first storage unit is damaged; accumulating a number of damaged storage units if first storage unit is damaged; determining whether the number of damaged storage units is larger than first threshold number; and exiting sequential read operation and performing random read operation to read data of specific storage unit if the number of damaged storage units is larger than first threshold number.

Abstract: Technologies are disclosed for automatic troubleshooting of virtual machine (VM) instances in a service provider network. A health checker service determines that a VM instance is in a non-responsive state. At least one screenshot image generated by the VM instance is obtained from a screenshot service. The at least one screenshot image is evaluated with respect to at least one reference screenshot image of a plurality of reference screenshot images by a recognition service. The at least one screenshot image is matched with a reference screenshot image of the plurality of reference screenshot images by the recognition service to provide a type of the at least one screenshot image. At least one responsive action is performed by the health checker service based at least in part upon the type of the at least one screenshot image.

Abstract: A memory test apparatus according to the present embodiment comprises a first storage medium temporarily retaining a test result of memory cells of a device under test in a plurality of divided portions based on data output from the device under test. A first processor reads the divided test result from the first storage medium to compress the test result. A second storage medium is provided to respectively correspond to a plurality of the devices under test and receives the compressed test result from the first processor and saves the compressed test result.

Abstract: A method for screening bad data columns in a data storage medium comprising a plurality of data columns includes: labeling or recording a plurality of bad data columns as a bad data column group, wherein the bad data columns are selected from the data columns in the data storage medium, each of the bad data column groups labels or records a position and a number of the bad data columns; determining whether the total number of the bad data columns is greater than a total number of the bad data column groups; and if yes, labeling or recording any two bad data columns of the bad data columns spaced apart by P data columns as one of the bad data column groups, wherein P is a positive integer.

Abstract: A memory controller includes an interface and circuitry. The interface is configured to communicate with a memory device, which includes multiple memory cells, and which applies refreshing to the memory cells by repeatedly inverting data stored in the memory cells. The circuitry is configured to store input data in a group of the memory cells, to read the stored input data from the group of the memory cells to produce read data, the read data has an actual polarity that is either un-inverted or inverted due to the refreshing of the memory cells in the group, to analyze the read data for identifying the actual polarity of the read data, and to recover the input data from the read data based on the identified actual polarity.

Abstract: A memory system includes: a memory device; and a memory controller suitable for controlling the memory device, and the memory device includes: a plurality of normal memory cells; a plurality of redundant memory cells; and a soft repair circuit suitable for replacing a portion of normal memory cells among the plurality of the normal memory cells with the plurality of the redundant memory cells, and the memory controller controls the soft repair circuit to repair the portion of the normal memory cells among the plurality of the normal memory cells with the plurality of the redundant memory cells, commands the memory device to write a secure data in the plurality of the redundant memory cells, and controls the soft repair circuit to recover the repairing of the portion of the normal memory cells with the plurality of the redundant memory cells.

Abstract: A method for screening bad data columns in a data storage medium comprising a plurality of data columns includes: a) labeling or recording a plurality of bad data columns as bad data column group, wherein the bad data columns are selected from the data columns, and each bad data column group labels or records a position and a number of the bad data columns; b) determining whether at least one bad data column is not labeled or recorded; and c) if yes, labeling or recording any two bad data columns spaced apart by P data columns and the P data columns as one of the bad data column groups, wherein P is a positive integer.

Abstract: A method of operating a semiconductor memory device is provided. In a method of operating a semiconductor memory device including a memory cell array which includes a plurality of bank arrays, memory cells in a first region of the memory cell array are tested to detect one or more failed cells in the first region, a fail address corresponding to the detected one or more failed cells is determined and the determined fail address is stored in a second region different from the first region, in the memory cell array.

Abstract: A programmable logic array (PLA) is disclosed employing programming logic tile (PLT), System On Chip (SOC) interface bus, Input Output (IO) blocks and Logic Processing Blocks (LPB). SOC processors using SOC interface bus program PLT successively using different configuration memory bank values to realize a logic not limited by the PLT resource counts. Configuration memory blocks comprising of multiple configuration memory banks and configuration programming control logic remove logic processing penalty due to configuration delays. PLT comprises of Programmable Logic Cells (PLC), Programmable Logic Interface (PLY), Embedded Array Blocks (EAB) and configuration memory block. PLA comprises of PLT, IO blocks, SOC interface bus and LPB. PLA accelerates user functionality in as SOC. IO blocks are used to stream data from other SOC components. LPB use PLT to accelerate user specific functionality.

Abstract: A memory array includes m·(n+1) memory cells, wherein n and m are natural numbers greater than zero. Each of the plurality of memory cells is connected to one of (n+1) bitlines and one of m wordlines. The memory array further includes n outputs configured for reading a content of the memory array. The memory array further includes n output switches, wherein an i-th output switch is configured for selectively connecting, in response to a switching signal, either an i-th bitline or an (i+1)-th bitline to an i-th output, and wherein i is a natural number and 0?i?n?1. The memory array further includes an (n+1)-th output switch, wherein the (n+1)-th output switch is configured for selectively connecting, in response to the switching signal, either the (n+1)-th bitline or a defined potential to an (n+1)-th output.

Abstract: Provided are a method and device for repairing memory. The method includes: determining spare lines with priority to be used for repair, and searching for a repair solution by using the spare line with priority and failure counters for lines without priority.

Abstract: A method is provided to convert commercial microprocessors to radiation-hardened processors and, more particularly, a method is provided to modify a commercial microprocessor for radiation hardened applications with minimal changes to the technology, design, device, and process base so as to facilitate a rapid transition for such radiation hardened applications. The method is implemented in a computing infrastructure and includes evaluating a probability that one or more components of an existing commercial design will be affected by a single event upset (SEU). The method further includes replacing the one or more components with a component immune to the SEU to create a final device.

Abstract: Maintaining operability of a network-connected data processing apparatus is provided. In response to a requirement for failover from a first resource to a second resource, one or more processors tests an availability of the second resource, wherein the first and second resources are redundant resources of a network-connected data processing apparatus that is communicatively coupled to at least one host computer. In response to a positive determination of the availability of the second resource, one or more processors initiates the failover; and in response to a negative determination of the availability of the second resource, one or more processors provides an indication of unavailability.

Abstract: Provided are a memory device and a memory module, which perform both an ECC operation and a redundancy repair operation. The memory device repairs a single-bit error due to a ‘fail’ cell by using an error correction code (ECC) operation, and also repairs the ‘fail’ cell by using a redundancy repair operation when the ‘fail’ cell is not repairable by the ECC operation. The redundancy repair operation includes a data line repair and a block repair. The ECC operation may change a codeword corresponding to data per one unit of memory cells including the ‘fail’ cell, and may also change the size of parity bits regarding the changed codeword.

Abstract: According to an embodiment, a reconfigurable semiconductor integrated circuit includes memories connected in parallel, a logic circuit whose logic is defined according to data output of one of the memories, a signal output unit, and a switching unit. The signal output unit includes output terminals corresponding to the respective memories. Each terminal outputs a selection signal for enabling the data output or a non-selection signal for disabling the data output to the logic circuit. The signal output unit is configured to output the selection signal in a cyclic manner over the terminals so that one terminal outputs the selection signal and the others output the non-selection signal. The switching unit is configured to set a route between a first output terminal and a second output terminal of the terminals to an open state or a closed state. The route bypasses at least a single output terminal.

Abstract: In an example embodiment, a method may include collecting, at a controller within an integrated circuit, defect information indicative of defects identified during a built-in self-test (BIST) operation performed on plural memories embedded within the integrated circuit. Fuses within the integrated circuit may be blown based on the defect information collected automatically and without software intervention. The fuses blown may be used to inform a built-in self-repair (BISR) operation performed on the plural memories.

Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Abstract: In an exemplary embodiment of this disclosure, a computer-implemented method includes receiving, at a hardware accelerator, a first instruction to project a first plurality of database rows, where each of the first plurality of database rows has one or more variable-length columns. The first plurality of database rows are projected, by a computer processor, to produce a first plurality of projected rows. This projection is performed at streaming rate.

Abstract: A memory device includes a memory array with random defective memory cells. The memory array is organized into rows and columns with a row and column identifying a memory location of a memory cell of the memory array. The memory device includes a row address device and a column address device and is operative to use a grouping of either the row or the column addresses to manage the random defective memory cells by mapping the memory location of a defective memory cell to an alternate memory location.

Abstract: A semiconductor memory apparatus is capable of improving the alignment margin for a bank and sufficiently ensuring a space for forming a global input/output line. The semiconductor memory apparatus includes a stack bank structure having at least two sub-banks continuously stacked without disconnection of data signal lines, and a control block arranged at one side of the stack bank structure to simultaneously control column-related signals of the sub-banks.

Abstract: Memory blocks in an integrated circuit (IC) chip can be repaired by employing automated test equipment external to the IC chip to aid in burning fuses on the IC chip by encoding the fuses with binary-encoded numbers. Each binary-encoded number represents a bit position of each “1” bit of a repair control word corresponding to a defective memory location. During a repair sequence preceding operation of the IC chip, the binary-encoded numbers are read out of the fuses and used to form a serial stream of repair chain information.

Abstract: Memory devices adapted to repair single unprogrammable cells during a program operation, and to repair columns containing unprogrammable cells during a subsequent erase operation. Programming of such memory devices includes determining that a single cell is unprogrammable and repairing the single cell, and repairing a column containing the single cell responsive to a subsequent erase operation.

Abstract: A CAM device includes a CAM array that can implement column redundancy in which a defective column segment in a selected block can be functionally replaced by a selected column segment of the same block, and/or by a spare column segment of the same block.

Abstract: A system for managing redundancy in a memory device includes memory arrays and associated periphery logic circuits, and redundant memory arrays and associated redundant periphery logic circuits. The memory arrays and a first set of logic circuits associated with the periphery logic circuits corresponding to the memory arrays are connected to the power supply by way of memory I/O switches. The redundant memory arrays and associated redundant periphery logic circuits are connected to the power supply by way of redundant I/O switches. The memory and redundant I/O switches are switched on/off based on an acknowledgement signal generated during a built-in-self-test (BIST) operation of the memory device.

Abstract: A memory device includes a memory array with random defective memory cells. The memory array is organized into rows and columns with a row and column identifying a memory location of a memory cell of the memory array. The memory device includes a row address device and a column address device and is operative to use a grouping of either the row or the column addresses to manage the random defective memory cells by mapping the memory location of a defective memory cell to an alternate memory location.

Abstract: To provide a write amplifier that is connected to bit lines, a read amplifier that is connected to the bit lines via a first switch, and a relief memory element that includes a write port that is connected to the bit lines via a second switch, and a read port that is connected to the read amplifier via a third switch. When there is a request to access a defective memory cell, during a write operation, the second switch is turned on and write data is supplied from the write amplifier to the relief memory element via the bit lines, and during a read operation, the first switch is turned off and the third switch is turned on, and then read data read from the relief memory element is supplied to the read amplifier without being routed via the bit lines.

Abstract: A memory device includes a memory array with random defective memory cells. The memory array is organized into rows and columns with a row and column identifying a memory location of a memory cell of the memory array. The memory device includes a row address device and a column address device and is operative to use a grouping of either the row or the column addresses to manage the random defective memory cells by mapping the memory location of a defective memory cell to an alternate memory location.

Abstract: A method for managing a flash memory that includes a plurality of primary cells and a plurality of spare cells includes interrogating the flash memory to determine which spare cells have been used to replace respective primary cells and using at least a portion of a remainder of the spare cells as reference cells.

Abstract: According to one embodiment of the present invention, a method for bank sparing in a 3D memory device that includes detecting, by a memory controller, a first error in the 3D memory device and detecting a second error in a first element in a first rank of the 3D memory device, wherein the first element in the first rank has an associated first chip select. The method also includes sending a command to the 3D memory device to set mode registers in a master logic portion of the 3D memory device that enable a second element to receive communications directed to the first element and wherein the second element is in a second rank of the 3D memory device, wherein the first element and second element are each either a bank or a bank group that comprise a plurality of chips.

Abstract: According to one embodiment of the present invention, a method for operating a three dimensional (“3D”) memory device includes detecting, by a memory controller, a first error on the 3D memory device and detecting, by the memory controller, a second error in a first chip in a first rank of the 3D memory device, wherein the first chip has an associated first chip select. The method also includes powering up a second chip in a second rank, sending a command from the memory controller to the 3D memory device to replace the first chip in the first chip select with the second chip and correcting the first error using an error control code.

Abstract: Subject matter disclosed herein relates to on-the-fly remapping a memory device by hardware-switching data paths to locations of the memory device.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: A memory device comprises a memory cell array and a bad page map. The memory cell array comprises a plurality of memory cells arranged in pages and columns, wherein the memory cell array is divided into a first memory block and a second memory block each corresponding to an array of the memory cells. The bad page map stores bad page location information indicating whether each of the pages of the first memory block is good or bad. A fail page address of the first memory block is replaced by a pass page address of the second memory block according to the bad page location information.

Abstract: A method and apparatus for performing half-column redundancy in a CAM device is disclosed, capable of replacing a defective half-column in the CAM array with only one half of another column. For example, present embodiments can provide twice the redundancy by replacing only one half of a defective CAM cell with one half of a spare cell or of a selected cell. The half-column redundancy disclosed herein provides finer granularity and higher effectiveness to the redundancy scheme as compared to conventional redundancy schemes employed on a CAM array. Thus, the CAM array can be designed and fabricated with a higher yield without having to accommodate for more spare columns than employed by conventional redundancy schemes, allowing for more efficient use of silicon area and a more robust CAM array design.

Abstract: A system includes a first device, a first storage element, a comparator and a second device. The first device is configured to test memory cells in an array of memory cells to detect defective memory cells. The defective memory cells include a first memory cell and a second memory cell. The first storage element is configured to store a first address of the first memory cell. The comparator is configured to compare a second address of the second memory cell to the first address.

Abstract: Disclosed herein is a semiconductor device that includes selection lines selected based on an access address, a first hit signal generation circuit activating a first hit signal when the access address is coincident with a programmed address that designates a defective selection line included in the selection lines, and a first redundant selection line selected when the first hit signal is activated. The first hit signal generation circuit deactivates the first hit signal when a value of the access address is in a first address range even if the access address is coincident with the programmed address.

Abstract: A control apparatus controlling testing of a memory under test that includes one or more row repair memory blocks and column repair memory blocks. The control apparatus comprises a counting section that sequentially receives test results respectively indicating pass/fail of a plurality of test blocks of the memory under test, and sequentially counts, for each first-type memory block, which is a row-oriented memory block or a column-oriented memory block, a fail memory block number among second-type memory blocks; a selecting section that selects memory blocks first-type memory blocks for which the fail memory block number exceeds a reference value, such that the number of selected memory blocks is no greater than the number of first-type repair memory blocks of the memory under test; and a test control section that masks test blocks among the memory blocks selected by the selecting section and causes further testing of the memory under test.

Abstract: In one embodiment, a cache element allocation method is provided. Each cache element on a CPU is assigned a quality rank based on the error rate of the cache element. If an allocated cache element is deemed to be faulty, the quality rank of the faulty allocated cache element is compared with the quality rank of the non-allocated cache elements. If a non-allocated cache element has a lower quality rank than the allocated cache element, the non-allocated cache element is swapped in for the allocated cache element.