Abstract: The techniques discussed herein identify failed segments of memory in a memory region. The techniques may then manage the failed segments of memory by logically clustering the failed segments of memory at an outlying portion of the memory region using a remapping process. The remapping process may include creating and storing remapping metadata defining segment remapping entries for the memory region. Accordingly, the failure clustering logically eliminates or reduces the memory fragmentation so that a system can allocate larger portions of contiguous memory for object storage.

Abstract: A repair control circuit and a semiconductor integrated circuit using the same, which can reduce test time, are provided. The semiconductor integrated circuit includes a plurality of memory blocks in which a plurality of word lines are arranged, a plurality of word line drivers driving one or more of the plurality of word lines in response to a plurality of memory block selection signals, and a repair control circuit determining whether to perform a repair through comparison of repair addresses generated in response to surplus addresses and the plurality of memory block selection signals with external addresses.

Abstract: An address selector replaces an address pointing to a defective instruction in a built-in firmware. The address selector includes a comparing unit and a multiplexer. The comparing unit provides a comparison result by comparing a current address received from a processor with a predetermined address pointing to the defective instruction.

Abstract: A memory device includes a memory array with random defective memory cells. The memory array is organized into rows and columns with a row and column identifying a memory location of a memory cell of the memory array. The memory device includes a row address device and a column address device and is operative to use a grouping of either the row or the column addresses to manage the random defective memory cells by mapping the memory location of a defective memory cell to an alternate memory location.

Abstract: Embodiments herein relate to a method for remapping data. In an embodiment, it is determined if a first memory block is faulty. A pointer is stored to the first memory block and a pointer flag of the first memory block is set when the first memory block is faulty. Data previously stored at the first memory block is written to a second memory block, where the pointer points to a location of the second memory block.

Abstract: Techniques for implementing memory sparing with a memory controller. In an embodiment, a memory controller stores memory sparing information which is specific to a first line of memory in a memory coupled to and controller by the memory controller. In another embodiment, the memory controller includes a second memory line which is to operate as a spare for the first line of memory, where accessing the second memory line is to be a substitute for accessing the first memory line.

Abstract: Methods of memory management are described which can accommodate non- maskable failures in pages of physical memory. In an embodiment, when an impending non-maskable failure in a page of memory is identified, a pristine page of physical memory is used to replace the page containing the impending failure and memory mappings are updated to remap virtual pages from the failed page to the pristine page. When a new page of virtual memory is then allocated by a process, the failed page may be reused if the process identifies that it can accommodate failures and the process is provided with location information for impending failures. In another embodiment, a process may expose information on failure-tolerant regions of virtual address space such that a physical page of memory containing failures only in failure-tolerant regions may be used to store the data instead of using a pristine page.

Abstract: An access method of a volatile memory accesses the volatile memory via a block access fashion. The volatile memory includes a plurality of blocks. The method includes: performing a reading operation for a block having at least one known bad cell among the blocks, which includes reading a block data and an error correction code data corresponding to the block and applying the ECC data to correct data read from the at least one known bad cell to generate a corrected block data.

Abstract: A method and apparatus for implementation of error correction code (ECC) checking in non-ECC-compliant components. The method includes receiving a logical address, wherein the logical address maps to first and second physical addresses of a memory. The first and second physical addresses of the memory correspond to memory locations that store data and a corresponding ECC, respectively. The method further comprises translating the logical address into the first and second physical addresses, accessing the data over a data path, separately accessing the ECC over the same data path, and checking the integrity of the data using the ECC.

Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.

Abstract: A method is provided for recovering from an uncorrected memory error located at a memory address as identified by a memory device. A stored hash value for a memory page corresponding to the identified memory address is used to determine the correct data. Because the memory device specifies the location of the corrupted data, and the size of the window where the corruption occurred, the stored hash can be used to verify memory page reconstruction. With the known good part of the data in hand, the hashes of the pages using possible values in place of the corrupted data are calculated. It is expected that there will be a match between the previously stored hash and one of the computed hashes. As long as there is one and only one match, then that value, used in the place of the corrupted data, is the correct value. The corrupt data, once replaced, allows operation of the memory device to continue without needing to interrupt or otherwise affect a system's operation.

Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.

Abstract: A replacement data storage circuit stores an address of a defective memory cell. The replacement data storage circuit includes a plurality of word lines, a plurality of bit lines, and a plurality of replacement data memory cells. The replacement data memory cells are connected to the word lines and the bit lines to store an address of a defective memory cell. Each of the word lines is connected to a plurality of replacement data memory cells and each of the bit lines is connected to one replacement data memory cell.

Abstract: A method, device and system for storing data in a cache in case of power failure are disclosed. The method includes: in case of power failure of a storage system, receiving configuration information from a central processing unit (CPU); establishing a mapping relationship between an address of data in the cache and an address in a storage device according to the configuration information; sending a signaling message that carries the mapping relationship to the cache, so that the cache migrates the data to the storage device according to the signaling message.

Abstract: A flash memory controller having a configuring unit of error correction code (ECC) capability and method thereof are described. The flash memory controller includes a control unit, a buffer, an ECC module, and a configuring unit. The flash memory has a data area for storing the data content and a first spare area for storing a first ECC value corresponding to the data content. The ECC module utilizes the data content for generating a second ECC value and comparing the second ECC value with the first ECC value to determine whether the data content comprises a plurality of errors based on the compared result of the first ECC value and the second ECC value. The configuring unit computes the amount of the errors if the data content has the errors to determine whether the amount of the errors exceeds a predetermined threshold.

Abstract: In a case where at least one of physical blocks composing the virtual block becomes a defective block, use of the virtual block to which the defective block belongs is forbidden and the virtual block of which use is forbidden is managed as a defective virtual block. Replacing the defective block with a normal block is performed among the defective virtual blocks so as to generate the virtual block to which the defective block does not belong. Then use of the virtual block generated is allowed.

Abstract: A memory control unit for controlling a memory module comprising a plurality of memory cells, said memory control unit comprising means for detecting failure of at least one memory cell, means for deactivating said at least one defective memory cell, means for assigning the address of said at least one defective memory cell to at least one replacement memory cell, first tracking means for tracking the remaining replacement memory cells and masking means to hide the address of a defective memory cell to prevent further usage of this address instead of assigning said address to a replacement memory cell.

Abstract: A scheme for block substitution within a flash memory device is disclosed which uses a programmable look-up table to store new addresses for block selection when certain input block addresses are received. The new addresses are loaded into a programmable fuse latch each time an address transition is detected in the input address. The new addresses may contain block addresses or block and bank addresses.

Abstract: A block repair device is used in a Dynamic Random Access Memory (DRAM) having a primary array with a defective cell and a redundant array with a redundant row. The block repair device stores a block repair configuration that determines the dimensions (e.g., the number of rows and columns spanned) of a repair block. Routing circuitry is configured by the stored block repair configuration to output some row and column address bits from received row and column addresses in a selected ratio. Comparison circuitry compares the row and column address bits output by the routing circuitry with the address of the defective cell that defines the repair block. When a match occurs, the comparison circuitry implements a block repair by activating the redundant row and by causing data to be written to or read from the activated redundant row instead of the primary array.