Abstract: It is the objective of this invention to reduce deviation in contact resistance variation between electrodes among pressure-sensitive resistor sensors. The sensor is composed of a pair of films. One film has a plurality of electrode portions extending in a certain direction and the other film has at least one electrode portion that is arranged in a transverse relation with a plural of the electrode portions on the other film. Contact points generated by applied pressure are limited to crossing points between the electrode portions of the pair of films. As a result, variation in contact resistance due to applied pressure shift becomes more constant. Thus, it is possible to reduce deviation of contact resistance between the electrodes among sensors.

Abstract: That portion of an n-type single-crystal Si layer 1 which corresponds to a pressure-sensitive region is etched to an SiO2 layer 2 by using the SiO2 layer 2 as an etching stopper layer. The SiO2 layer 2 exposed by this etching is removed. The pressure-sensitive region of the n-type single-crystal Si layer 3 is etched by a predetermined amount to form a diaphragm 4. Thus, the SiO2 layer 2 is removed from the diaphragm 4 and a diaphragm edge portion 6.

Abstract: A pressure sensor (1) has a circuit board (5) having a circuit portion (11) for amplifying an electric signal detected by a pressure detecting element (2C) and attached with an IC die (16), and a terminal (12) for inputting and outputting the electric signal from the circuit portion (11). The circuit portion (11) and the terminal (12) have a frame (11A, 12D) formed by a metal plate, the metal plate being provided with resin molds (14, 15). The circuit portion (11) and the terminal (12) are continuously formed, so that steps for soldering etc. is not necessary.

Abstract: A pressure sensing device suitable for medical use including: a dielectrically isolated sensor chip including a first wafer having first and second surfaces, a deflectable diaphragm formed therein and defining an active area of the sensor chip surrounded by an inactive area of the sensor chip, an electronic circuit formed on the first surface in the active area and being adapted to provide a signal indicative of an amount of deflection of the diaphragm, and a non-conductive coating on at least a portion of the second side; and, a plastic header including first and second ends, a recess in the first end and a plurality of electrically conductive pins extending from the recess through the header and out the second end; wherein, the sensor chip is secured within the recess of the plastic header such that the electronic circuit is in electrical contact with at least one of the pins.

Abstract: A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R. The radius of curvature R satisfies a formula of: R/S=526·(d/S)2−0.037·(d/S)+a1, where S is an area of the diaphragm, d is a thickness of the diaphragm, and a1 is in a range of 9.6×10−7 to 16×10−7 inclusive.

Abstract: The present invention provides a pressure detector capable of easily responding to changes in specification. The pressure detector has a sensor unit for detecting pressure and electronic parts for reducing electrical disturbance which are electrically joined to an exposed part of lead material of an opening of an external case. Thermoset resin is injected and set in the opening to obtain fixed members. An external electronic part for compensating for transient voltage resistance and electromagnetic failure resistance of a single one-chip semiconductor sensor can be mounted, and cost can be reduced by miniaturization, light weight, and reduction in man-hours required for assembly.

Abstract: Respective first ends of first and second strain gates are connected to a first voltage potential. First and second constant currents from first and second current sources flow through the first and second strain gages, respectively. The respective first ends of the first and second current sources are connected to second ends of the first and second strain gages, respectively. A voltage difference signal between the second ends of the first and second strain gages indicates the detected physical quantity. The first and second constant currents are adjusted to reduce the offset voltage in the voltage difference signal when no strain, that is, no physical quantity is measured. The first and second current sources may have substantially the same temperature coefficients in said first and second constant currents, respectively.

Abstract: In a pressure sensor made by bonding a sensor chip and a metal stem together with a resin adhesive, fluctuation of the sensor output caused by temperature changes are maximally reduced. The resin adhesive for bonding together the sensor element and the metal stem has a creep characteristic defined as CR=A×&sgr;B between its creep rate CR and stress &sgr; upon it with A and B being constants. The resin adhesive is selected to satisfy that the constant B is not greater than 3.5.

Abstract: A pressure sensor has a sensor chip with a diaphragm formed therein and bumps formed thereon, and a stem with leads extending from a surface thereof to the sensor chip. The bumps and the leads are electrically connected by face down bonding so that a surface of the sensor chip faces the surface of the stem. In this manner, bonding wires are unnecessary. Therefore, an area for disposing the bonding wires in the stem can be cut down, so that the pressure sensor can be miniaturized.

Abstract: A stop member is secured to a piezoresistive semiconductor bossed diaphragm at the peripheral area, and includes a first and second slotted apertures in communication with the central active area, the first and second slotted apertures correspond in location with opposing sides of a central boss. The stop member includes a stop cavity located between the first slotted aperture and the second slotted aperture, and the stop cavity overlies the central boss and is separated therefrom to enable the diaphragm to deflect when a force is applied and to enable the central boss to impinge on the surface of the stop cavity when an excessive force is applied. The first and second slotted apertures permit another force to be applied to the active region of the diaphragm in a direction opposite to the stopped direction. A second stop member is secured to the diaphragm to provide stopping in either direction.

Abstract: A corrosion proof pressure transducer for measuring exhaust gas pressure includes a chip with a semiconductive diaphragm, electronics, and conductive pads thereon; with leads sonically bonded to the pads. To preclude degradation of the transducer by internal combustion engine exhaust gases, the chip may have (1) a thin glass passivation layer, (2) a vacuum deposited polymeric coating and (3) a layer of gel, thereon.

Abstract: A pressure-detecting chamber 23, a pressure-directing path 25 and a buffer space 24 are formed on the upper face of a main-body-side substrate 22 as recessed portions, and the upper face of the pressure-detecting chamber 23 is covered with a thin-type diaphragm 31, and upper faces of the pressure-directing path 25 and the buffer space 24 are covered with a cover substrate 30. A pressure-introducing unit 26 formed on the lower face of the main-body-side substrate 22 is connected to the lower face of the buffer space 24. The cross-section of the buffer space 24 is greater than the cross-section of the pressure-introducing unit 26, and the capacity of the buffer space 24 is greater than the capacity of the pressure-directing path 25.

Abstract: There is disclosed a high temperature surface mounted pressure transducer. The pressure transducer consists of three basic parts which include an ultra thin surface mount sensor positioned on a borosilicate glass structure having four or more circular depressions which correspond to the contact areas of the semiconductor sensor with additional depressed lead-out channels. The lead-out channels and the contact depressions are metalized with a high temperature metalization system. The composite structure consisting of the ultra thin surface mount sensor and borosilicate glass support structure is now mounted in a metallic flat-pack header or housing. In so mounting, the sensor is first mounted to the glass structure using a metal glass frit in the contact depressions and as Pyroceram glass in the non-protruding area of the sensor structure.

Abstract: A position sensor comprises a substrate having an array of pressure sensors and a membrane overlying the substrate. The membrane includes physical parameters which vary with position. The membrane may include discontinuous regions and protrusions which affect the way in which forces on the membrane are distributed to the substrate. A pressure sensor may also include a controller for receiving pressure information from the substrate, with a signal processor being programmed to localize the depressed region or regions of the substrate.

Abstract: A stop member is secured to a piezoresistive semiconductor bossed diaphragm at the peripheral area, and includes a first and second slotted apertures in communication with the central active area, the first and second slotted apertures correspond in location with opposing sides of a central boss. The stop member includes a stop cavity located between the first slotted aperture and the second slotted aperture, and the stop cavity overlies the central boss and is separated therefrom to enable the diaphragm to deflect when a force is applied and to enable the central boss to impinge on the surface of the stop cavity when an excessive force is applied. The first and second slotted apertures permit another force to be applied to the active region of the diaphragm in a direction opposite to the stopped direction. A second stop member is secured to the diaphragm to provide stopping in either direction.

Abstract: A corrosion proof pressure transducer for measuring exhaust gas pressure includes a chip with a semiconductive diaphragm, electronics, and conductive pads thereon; with leads sonically bonded to the pads. To preclude degradation of the transducer by internal combustion engine exhaust gases, the chip may have (1) a thin glass passivation layer, (2) a vacuum deposited polymeric coating and (3) a layer of gel, thereon.

Abstract: A pressure detection device for detecting pressure of fluid that comprises a housing, a pressure-transmission medium, a sensor chip, at least one terminal pin, a sealant and a film. The pressure of the fluid is transmitted to the pressure-transmission medium such as silicone oil, and the sensor chip detects the pressure of the pressure-transmission medium. The terminal pin for the electrical connection between the sensor chip and an outside device is fixed into the housing, and a contact protrusion that is exposed in the housing for being electrically connected with the sensor chip is formed at one end of the terminal pin. The sealant such as poly-monochloro-para-xylylene is put around the contact protrusion for sealing the pressure-transmission medium. The film such as poly-monochloro-para-xylylene for avoiding the contact between the pressure-transmission medium and the sealant is coating the sealant.

Abstract: A vacuum chamber-forming method for forming a vacuum chamber in a power element of a control valve for a variable capacity compressor through a reduced number of steps. A power element is assembled in the atmospheric air by arranging a disk, a diaphragm, a disk, a spring and an upper housing on a lower housing, caulking the periphery of the lower housing to the periphery of the upper housing, and then soldering the junction of the upper and lower housings. The assembled power element is placed in a vacuum container, and a small hole formed in the upper housing is subjected to spot welding in the vacuum atmosphere, whereby the small hole is sealed by a weld metal.

Abstract: A pressure-detecting chamber 23, a pressure-directing path 25 and a buffer space 24 are formed on the upper face of a main-body-side substrate 22 as recessed portions, and the upper face of the pressure-detecting chamber 23 is covered with a thin-type diaphragm 31, and upper faces of the pressure-directing path 25 and the buffer space 24 are covered with a cover substrate 30. A pressure-introducing unit 26 formed on the lower face of the main-body-side substrate 22 is connected to the lower face of the buffer space 24. The cross-section of the buffer space 24 is greater than the cross-section of the pressure-introducing unit 26, and the capacity of the buffer space 24 is greater than the capacity of the pressure-directing path 25.

Abstract: A disk-shaped silicon sensor element for a pressure sensor is described. The sensor element has a disk upper side, a disk underside, stress measuring elements that convert mechanical stresses into signals, and circuits disposed on the disk upper side. The disk underside serves during a pressure measurement for receiving a force that acts as a bending pressure for bending the disk-shaped silicon sensor element. The sensor element is formed with essentially the same thickness over its entire extent.

Abstract: An integrated pressure sensor system and method for making such a device are provided. The pressure system includes a capacitor having an underlying electrode, a dielectric cavity, an upper electrode, and an etch cavity for removing sacrificial material from the dielectric cavity. The surface of the device is relatively flat due to epitaxal deposition of epi polysilicon and single crystal silicon. The capacitor circuit of the pressure sensor system is capable of undergoing CMOS processes without requiring additional steps of covering the capacitor device to protect it and then removing the covering following the CMOS processes.

Abstract: A semiconductor structure includes an upper and a lower layer of semiconductor material separated by a layer of insulation material. Resistors formed in the upper layer are connected into a Wheatstone bridge arrangement having an output. A first voltage provides power to the bridge. A second voltage connected to the lower layer of semiconductor material has a value selected to reduce the drift of the output following power up of the sensor.

Abstract: A sensor has an electrical interconnect grown in a cavity between first and second layers that are bonded together. Electrically conductive grain growth material is selectively deposited on at least one of two electrically conductive film interconnect regions that face one another across the cavity. The grain growth material is then grown upon predetermined conditions to form the electrical interconnect between the two interconnect regions. A sensor element deposited in the cavity is electrically coupled between the layers by the interconnect. The grain growth material can be tantalum that is heated after the layers are bonded to grow grains that interconnect the electrically conductive films.

Abstract: This invention provides a piezometric device to measure ground water having a fluid container in which the piezometric element is immersed so that it is permanently saturated. An opening above the level of the piezometric element allows fluid in a container to be retained and yet equalized with surrounding ground water to provide pressure readings. This avoids the device becoming unreliable should the water level fluctuate. A releasable seal may be placed over the opening into the container 2 to keep the fluid within the housing during transportation.

Abstract: A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.

Abstract: A disk-shaped silicon sensor element for a pressure sensor is described. The sensor element has a disk upper side, a disk underside, stress measuring elements that convert mechanical stresses into signals, and circuits disposed on the disk upper side. The disk underside serves during a pressure measurement for receiving a force that acts as a bending pressure for bending the disk-shaped silicon sensor element. The sensor element is formed with essentially the same thickness over its entire extent.

Abstract: In a pressure sensor made by bonding a sensor chip and a metal stem together with a resin adhesive, fluctuation of the sensor output caused by temperature changes are maximally reduced. The resin adhesive for bonding together the sensor element and the metal stem has a creep characteristic defined as CR=A×&sgr;B between its creep rate CR and stress &sgr; upon it with A and B being constants. The resin adhesive is selected to satisfy that the constant B is not greater than 3.5.

Abstract: A physical sensor component includes a housing (110) having a cavity (112), a pressure sensor device (120) mounted in the cavity of the housing, and a chemically selective and physically selective filter (153) overlying the cavity of the housing and separated from the pressure sensor device.

Abstract: A semiconductor pressure sensor in which a semiconductor sensor element is contained in a package which is made by assembling a first case and a second case, and which have simple structure with low cost. The semiconductor pressure sensor is generally made up of a sensor element made of semiconductor; a sensor case made of resin; plural leads insert-formed into the sensor case so as to be partly exposed from the sensor case, wherein the leads is electrically connected to the sensor element; and a connector case assembled with the sensor case for covering the sensor element. The connector case has a flange portion which is provided with a cover portion, and a surround portion protruding from the cover portion for surrounding an exposed portion of the leads. The surround portion and the exposed portion form a connecting portion which can be connected with an external terminal. Hence, connecting function of the sensor can be realized with simple structure without additional connecting members.

Abstract: A process for manufacturing a microsystem for a pressure sensor includes the steps of deposit and forming a first conducting layer on a support. Deposit and forming a layer of sacrificial material covering the first conducting layer. Deposit and forming a second conducting layer on the layer of sacrificial material in the region located above the first conducting layer. Forming a first membrane layer covering and surrounding the layer of sacrificial material and the second conducting layer. Eliminating the layer of sacrificial material and forming the first membrane layer.

Abstract: A pressure sensor unit which comprises (i) a housing, (ii) pressure sensor members installed therein including a mount, the bottom of which is fixed to the inner base of the housing by means of an adhesive, a sensor chip firmly bonded to the top of the mount, terminals disposed on the inner base of the housing and bonding wires connecting the sensor chip to their respective terminals, and (iii) a sealant filling the housing so that all the pressure sensor members are completely buried therein; with the terminals being covered with a fluorinated polymer-containing composition functioning as adhesive in at least an upper part thereof and with the sealant being a fluorinated polymer-containing gel material, wherein the composition as adhesive is similar in fluorinated polymer to the gel material.

Abstract: A reference voltage generating circuit is constituted by resistors RE and RF each having a resistance not influenced by an application of pressure. The reference voltage generating circuit is connected between one and the other ends of a bridge circuit. A failure judgement of the bridge circuit is performed based on a comparison of a voltage difference VBC between two midpoints B and C of the bridge circuit and voltage differences VCE and VBE between a reference voltage level of the reference voltage generating circuit and the voltage levels of two midpoints B and C.

Abstract: It is an object of the present invention to provide a touch mode capacitive pressure sensor having higher pressure durability than conventional sensors. In this invention, a touch mode capacitive pressure sensor has a diaphragm made from boron-doped silicon, and the boron concentration at the top face of the diaphragm is equal to or greater than 1×1019 cm−3 and less than 9×1019 cm−3. Further, in this invention, a touch mode capacitive pressure sensor has a conductive diaphragm made by doping of an impurity and anisotropic etching, and the etch pit density on the top face of the diaphragm is equal to or less than five per &mgr;m2, and preferably equal to or less than one per &mgr;m2. As a result, the pressure durability of the diaphragm is greatly improved.

Abstract: A pressure and temperature sensor includes a sealed insulating package and an elastic, piezoelectric substrate deformably supported within the package. At least three surface-acoustic-wave resonators are affixed to a bottom of the substrate. A first and a second resonator are positioned in parallel relation along the substrate. A third resonator has a long axis nonparallel to the long axes of the first and the second resonator. The temperature coefficients of the first and second resonators are substantially equivalent; that of the third is different from those of the first and the second resonator, for permitting a temperature change to be sensed. Electrical connectors extend between the resonators to the outside of the package. A sensing system also includes an antenna for sending and receiving electromagnetic signals to and from the device.

Abstract: A device for measuring pressure in a space includes a semiconductor component suitable for measuring pressure that is positioned in the space and that has connecting pads for flip-chip mounting, a support element with a flat surface carrying a pattern of conductors onto which the semiconductor component is attached, and spacer elements in the space between the pattern of conductors and the bonding pads of the semiconductor component such that there is a space between the semiconductor component and the surface of the support elements in which space the pressure equals the pressure to be measured.

Abstract: A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.

Abstract: Selective encapsulation of a micro electro-mechanical pressure sensor provides for protection of the wire bands (140) through encapsulation while permitting the pressure sensor diaphragm (121) to be exposed to ambient pressure without encumbrance or obstruction. Selective encapsulation is made possible by the construction of a protective dam (150) around the outer perimeter of a pressure sensor diaphragm (121) to form a wire bond cavity region between the protective dam (150) and the device housing (105). The wire bond cavity may be encapsulated with an encapsulation gel (160) or by a vent cap (170). Alternatively, the protective dam (150) may be formed by a glass frit pattern (152) bonding a cap wafer (151) to a device wafer (125) and then dicing the two-wafer combination into individual dies with protective dams attached.

Abstract: An integrated microsensor includes a bowed micromachined membrane coupled to a substrate to define a microcavity therebetween. An integrated strain sensor is coupled to the micromachined membrane to generate a signal responsive to (deformation of the membrane and hence responsive to the pressure of the fluid in the microcavity. A frame is coupled to the peripheral edge of the membrane to assist in enlarging the microcavity. The membrane is composed of a nitride of B, Al, Ga, In, Tl or combinations thereof, or more particularly of p-type GaN where the frame is comprised of n-type GaN. The membrane and frame are fabricated using a photoelectrochemical etching technique. The fabrication of the integrated strain sensor creates stresses across the membrane. The strain sensor comprises an integrated circuit strain-FET. The strain-FET comprises an AlGaN/GaN heterostructure having an AlGaN/GaN interface where deformation of the membrane is coupled as strain to the AlGaN/GaN piezoelectric interface.

Abstract: A semiconductor sensor chip includes a thin diaphragm and an electrical circuit formed on a front surface of the diaphragm. The diaphragm distorts according to a pressure difference between pressures applied on both surfaces of the diaphragm, and the diaphragm distortion is converted into an electrical signal. Both surfaces of the diaphragm are covered with protecting members to protect the sensor chip from dusts and moisture contained in the gas. Since the gas is introduced to the rear surface of the diaphragm through a small passage while the front surface receives pressure with a relatively large area, the protecting member covering the rear surface is made softer than that covering the front surface. Thus, the sensor chip is properly protected against dusts and moisture.

Abstract: The invention relates to a pressure sensor component comprising a base body and a pressure connection element. The base body comprises a chip carrier, onto which a semiconductor chip with an integrated pressure sensor is mounted. Contact is made with the semiconductor chip by means of connection, which are routed laterally out from the base body. The base body is open on one side, and the opening is bounded by side parts of the chip carrier. The pressure connection element is placed onto the upper end regions of the side parts. The invention is distinguished by the fact that the filler, with which the inner space of the base body is filled and the semiconductor chip is covered, is simultaneously used to connect and seal the pressure connection element and the base body. The ends of the pressure connection element are preferably configured in such a way that the filler is drawn by capillary forces into the interspace between side parts and pressure connection element.

Abstract: The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference betw

Abstract: A pressure-detecting device in which a pressure sensor unit having the same specifications can be used even when there are numerous different forms of an outside member to which connection leads of the pressure sensor unit are to be electrically connected. A pressure sensor unit has four connection leads exiting a sensor housing. A coupling member has a terminal holding part and a connector part molded integrally from an insulating material and having insert-molded coupling leads. The coupling leads have terminal plates, all exposed on the same side, and terminal pieces projecting outwardly. Multiple versions of the coupling member are made by integrally joining connector parts of different shapes to terminal holding parts all having terminal plates disposed in the same state. The pressure sensor unit is assembled to a coupling member selected from among these and the connection leads are electrically connected to an outside member by way of this coupling member.

Abstract: A surface-micromachined high-pressure sensor, formed by forming a cavity using a sacrificial layer. The sacrificial layer can be reflowed to make the edges of the cavity more rounded. The material that is used for the diaphragm can be silicon nitride, or multiple layers including silicon nitride and other materials. The pressure sensor is intended to be used in high pressure applications, e.g. pressure is higher than 6000, 10,000 or 30,000 P.S.I.

Abstract: A device for measuring pressure at several locations in a processing chamber under dynamic Conditions, i.e. when gas is flowing into and/or out of the chamber. A substrate has a plurality of pressure sensors electrically coupled to a measurement instrument. Conditions are established within a processing chamber to determine the effects of various process parameters, such as gas flow, on local pressures, and the local pressures are measured. The test conditions may simulate a process or may be standard test conditions to evaluate chamber configurations or hardware. The pressure test substrate may be calibrated under static conditions to improve the accuracy of the pressure readings.

Abstract: It is an object of this invention to provide a semiconductor pressure sensor which can be used even in an environment where there is contact with gasoline and the like. The pressure sensor of this invention comprises a base, a pressure-sensitive section which receives pressure and is mounted on the base, a pressure injection section which injects gas to be measured into the pressure-sensitive section, and a lead which is connected to the pressure-sensitive section and extracts a pressure detection signal. Furthermore, the pressure-sensitive section is affixed to the base by a flouric elastomer.

Abstract: A micromechanical sensor integrated on a chip, includes a semiconductor substrate, an electronic circuit, a void, a diaphragm, a counterelectrode and valve openings connecting a volume of the void to its surroundings. The valve openings are directed toward an upper surface of the wafer, and the counterelectrode is a component part of a coating plane that extends over the entire chip surface, so that the electronic semiconductor circuit can be applied to the coating plane by known semiconductor technology. A method for producing the micromechanical sensor as well as a microphone or a pressure sensor having the micromechanical sensor, are also provided.

Abstract: A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R.

Abstract: A device for measuring pressure at several locations in a processing chamber under dynamic conditions, i.e. when gas is flowing into and/or out of the chamber. A substrate has a plurality of pressure sensors electrically coupled to a measurement instrument. Conditions are established within a processing chamber to determine the effects of various process parameters, such as gas flow, on local pressures, and the local pressures are measured. The test conditions may simulate a process or may be standard test conditions to evaluate chamber configurations or hardware. The pressure test substrate may be calibrated under static conditions to improve the accuracy of the pressure readings.

Abstract: A pressure sensor fabricated onto a substrate using conventional CMOS fabrication processes. The pressure sensor is built on a substrate having a first conductivity type and has defined in it a well of an opposite conductivity type. This well defines a membrane. Resistors are diffused into the well. Source/drain regions are provided for leadouts for the resistors. An n-cap is provided for the resistors. Metalization contacts may be provided to connect the membrane to a positive bias during a membrane etching process. A cavity is provided on the underside of the substrate through which pressure is applied to the membrane. Signal conditioning circuitry, such as an operational amplifier, may also be fabricated on the same substrate preferably using the same IC processes.

Abstract: A semiconductor pressure sensor chip is mounted on a recess of a resin package, and is electrically connected to bonding pads on the bottom of the recess through bonding wires. The recess is filled with a first protective member having a relatively large Young's modulus and a second protective member having a relatively small Young's modulus. The first protective member covers the bonding pads, and the second protective member is disposed on the first protective member and covers a diaphragm of the sensor chip. Accordingly, voids are prevented from being produced without preventing displacement of the diaphragm.