Abstract: A pressure sensor assembly is provided for fitting within the valve stem of a vehicle tire. The assembly comprises a substrate assembly defining a plurality of holes. A pressure sensor and a temperature compensation sensor are mounted to the substrate assembly. Each sensor includes a deflectable membrane defining a first chamber and a cap mounted to the membrane to form a second chamber. A cover is provided for engaging with the pressure sensor and the temperature compensation sensor to define an active chamber and reference chamber respectively. The active chamber is exposed to tire pressure when the pressure sensor assembly is fitted within the valve stem whereas the reference chamber is sealed from tire pressure.

Abstract: A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

Abstract: A pressure sensor module includes a pressure sensor, a bump, and a laminated substrate. The pressure sensor includes a semiconductor substrate; a cavity; a pressure-sensitive element; and a conductive section. The cavity is disposed inside the semiconductor substrate such that a thin-plate region of the semiconductor substrate is provided and the thin-plate region being defined as a diaphragm. The pressure-sensitive element is arranged at the diaphragm. The conductive section is electrically connected to the pressure-sensitive element and disposed on the face of the semiconductor substrate at a region excluding the diaphragm. The bump is electrically connected to the conductive section. The laminated substrate includes a wiring base material electrically connected to the pressure sensor via the bump. The wiring base material is disposed inside the laminated substrate. A face of the wiring base material is electrically connected to the bump and has an exposed area from the laminated substrate.

Abstract: A pressure sensor which includes: a semiconductor substrate; a first cavity portion that spreads out approximately parallel with one surface of the semiconductor substrate in the interior of a central region thereof; a diaphragm portion of a thin plate shape that is positioned on one side of the first cavity portion; a pressure sensitive element that is disposed on the diaphragm; and a bump that is disposed in an outer edge region of the one surface of the semiconductor substrate that excludes the diaphragm portion and is electrically connected with the pressure sensitive element, wherein a second cavity portion is disposed in at least one portion of the outer edge region in the interior of the semiconductor substrate and is closed with respect to the one surface of the semiconductor substrate.

Abstract: A semiconductor device is equipped with a semiconductor sensor chip for detecting pressure variations that is arranged inside of a hollow cavity of a housing, wherein an opening is formed in a prescribed region of the housing, which is not positioned opposite to the semiconductor sensor chip, so as to allow the hollow cavity to communicate with an external space. The opening is formed using at least one through-hole having a thin slit-like shape. Alternatively, the opening is formed using plural through-holes each having a desired shape such as a thin slit-like shape, a circular shape, and a sectorial shape. Thus, it is possible to reduce negative influences due to environmental factors such as dust and sunlight with respect to the semiconductor sensor chip.

Abstract: A Pirani vacuum gauge in which dependency of temperature of a filament on variation of gas pressure is raised and the gas pressure can be measured with high accuracy. The Pirani vacuum gauge includes a cylindrical body 2 in which the interior communicates with a space to be measured for pressure; a filament 1 enclosed in the cylindrical body 2; and a pipe 7 surrounding the filament 1 in the cylindrical body, the least distance between the facing inner walls of the pipe being equal to less than 6 mm and the pipe 7 covering more than 80% of the length of the filament 1.

Abstract: A semiconductor pressure sensor is provided with a semiconductor pressure sensor part that converts a pressure to an electrical signal, a sensor module in which said semiconductor pressure sensor part and a terminal of which part is extended to the outside are insert-molded with a first resin, and an outer case in which said sensor module is contained, and said sensor module is further insert-molded with a second resin to form a connector portion, and the semiconductor pressure sensor is characterized in that the exposed portion of the sensor module from the second resin, and the boundary between the exposed portion of the sensor module and the second resin are covered with an adhesive.

Abstract: For a pressure sensor module comprising a printed circuit board and a pressure cell, wherein the pressure cell has a measuring opening, and the pressure cell is encapsulated by injection molding compound in such a manner that the measuring opening is kept open, the pressure cell, as viewed from the measuring opening, is attached on the rear side of the printed circuit board. The printed circuit board has a recess in the area of the measuring opening, and the injection molding compound encloses the attachment area of the pressure cell on the printed circuit board. Thereby, the use of different adhesives, also soft adhesives, for the connection of the pressure cell with the printed circuit board is possible without this attachment area being attacked by the surrounding media.

Abstract: A pressure sensor comprises a housing, a housing socket and a pressure port which projects into the housing and which is made of a lead free material. The pressure sensor exhibits a pressure sensing element, which is adhesively cemented on the pressure port, so that a passage, located in the pressure port, is sealed on one side. In one region, the pressure port exhibits a surface roughness and is provided with an adhesion promoting coat. In this region, the pressure sensing element is connected by adhesive cement to the pressure port.

Abstract: A mechanical-to-electrical sensing structure has first and second movable blocks formed in a handle layer. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. The first hinge is formed in the handle layer. A first gauge is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gauge. The first gauge is formed from a device layer with an oxide between the device and handle layers. The sensing structure is made from an SOI wafer, and the first gauge is protected during an etching away of handle material beneath the first gauge by an oxide between the device and handle layers and an etch-resistant oxide or nitride on exterior surfaces of the first gauge.

Abstract: A pressure sensor module of the invention includes a pressure sensor and a laminar substrate. Electrodes are arranged in the vicinity of a diaphragm portion of the pressure sensor. In the laminar substrate, a plurality of substrates are laminated, and the laminar substrate incorporates the pressure sensor. One face of the diaphragm portion is exposed by a space portion. According to the invention, it is possible to provide a pressure sensor module which facilitates smaller and thinner sizes, and which enables high-density packaging.

Abstract: An encapsulation composition for pressure signal transmission including a flexible and low modulus epoxy resin as a substance in combination with plastic balls with pressure signal transmission properties as filler is provided. Therefore, the pressure signal is transmitted by utilizing the property of easy deformation of the flexible epoxy resin under pressure. And the effect of signal transmission is enhanced by the contact between plastic balls. The encapsulation composition is used in a sensor for transmitting pressure signals. The encapsulation composition is hydrophobic, so an electronic device of the sensor can be protected against moisture or water to extend its lifetime. Compared with traditional sensors using liquid for transmitting pressure signal, this sensor using solid encapsulation composition has advantages such as easy production and processing.

Abstract: A pressure sensor includes at least one cantilever formed on an upper surface of a silicon substrate, a piezoresistor formed on a fixed end of the cantilever, and a metal wire and an electrode pad connected to both ends of the piezoresistor, wherein a stopper that limits a deformation of a free end of the cantilever is formed below the cantilever.

Abstract: The invention provides for a temperature compensating pressure sensing arrangement. The arrangement includes a substrate having sealed channels on which is deposited a CMOS layer, with a conductive layer and a passivation layer deposited on the CMOS layer. The arrangement also includes a conductive active membrane spaced from the conductive layer to form an active chamber, and a conductive reference membrane spaced from the conductive layer to form a sealed reference chamber. Further included is a cap which covers the membranes, said cap exposing the active membrane to an outside fluid pressure. The active membrane further defines a foot which is located between the substrate and cap with a leg extending away from the substrate and terminating in a substantially planar deflectable portion, which deflects due to differential pressure stresses so that an active capacitance is developed between the active membrane and the conductive layer depending on the electrical permittivity e of the fluid.

Abstract: In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.

Abstract: A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.

Abstract: The present invention relates to a pressure sensor. The pressure sensor includes a substrate assembly. The substrate assembly defines sealed channels and includes a conductive layer. A conductive membrane extends from the substrate assembly and is spaced from the conductive layer to form a sealed reference chamber. A cap defines apertures. The cap extends from the substrate assembly to cover the membrane and thereby form an apertured chamber.

Abstract: A pressure sensor for detecting pressure includes: a metallic diaphragm for receiving the pressure; four strain gauges providing a Wheatstone bridge, wherein each strain gauge outputs an electric signal corresponding to deformation of the diaphragm when the diaphragm is deformed by the pressure; and four semiconductor chips corresponding to four strain gauges, wherein each strain gauge is disposed in the semiconductor chip. Each semiconductor chip is mounted on the diaphragm.

Abstract: A micromechanical device and a method for producing this device are provided, two sensor patterns being provided in the semiconductor material to record two mechanical variables, in particular the pressure and the acceleration. The functionality of both sensor patterns is based on the same predefined converter principle.

Abstract: For example, to adjust an offset of a pressure sensor, there are provided an external resistor RE and an internal resistor circuit that is connected to both ends of RE and formed in a semiconductor chip such as a processor. The internal resistor circuit includes N pieces of internal resistors RI connected in series between both ends of RE, and (N+1) pieces of switches selecting one of voltages of respective nodes of the serial resistors and outputs the same as a signal. RE has a high absolute value precision of, e.g., several ten ohms to several hundred ohms, and RI has a high relative value precision of, e.g., several kilo-ohms. Therefore, an offset adjustment range is decided at a high absolute value precision mainly by RE, and with regard to the arrangement resolution, a high precision can be obtained along with the relative value precision of the RI.

Abstract: A pressure sensor package of the present invention includes a pressure sensor including a cavity disposed within a semiconductor substrate, wherein a region of the substrate above the cavity comprises a diaphragm section; a plurality of pressure-sensitive elements, wherein at least of portion of each pressure-sensitive element is disposed on the diaphragm section; and a plurality of conductive portions laterally spaced from the cavity and electrically connected to the pressure sensitive elements, a plurality of electrically conductive bumps arranged on the conductive portions and electrically connected to the conductive portions, wherein a total thickness D1 of the semiconductor substrate, a thickness D2 of the diaphragm section, a thickness D3 of the cavity, and a thickness D4=D1?(D2+D3) satisfy the relationships: (D2+D3) in a range of approximately 5-20 ?m, and D1 not less than about 100 ?m.

Abstract: A sensor system for measuring the pressure in the combustion chamber of an internal combustion engine, by the use of which a high measuring accuracy may be achieved, based on high measuring sensitivity and great thermal stability. In addition, the construction of the sensor system makes possible great system flexibility, and particularly very space-saving installation in the combustion chamber of an internal combustion engine.

Abstract: A capacitative pressure sensor (30) for harsh environments such as vehicle tires. The sensor has two opposing electrodes (36 and 50). One electrode is a membrane (50) that extends between fluid at a reference pressure and fluid at the pressure to be sensed. In use, the flexible membrane (50) deflects due to pressure differentials between the reference pressure and the fluid pressure. Associated circuitry converts the deflection into a signal indicative of the pressure to be sensed. The membrane is a laminate at least partially formed from a transition metal nitride because transition metal nitrides are a metal ceramics with high yield strength and metallic bonding that makes it suitable for use in extreme environments. They can also readily include an oxidizing component such as aluminium so that the membrane form a passivating surface oxide layer to protect it from oxidative failure.

Abstract: A method for manufacturing a micromechanical component is described, the micromechanical component having a medium. The medium has settable and changeable volume-elastic properties and generally completely encloses a sensor module and/or a module housing. The medium preferably has a low-pass response.

Abstract: A method for producing a sensor array including a monolithically integrated circuit is described as well as a sensor array. This sensor array has a micromechanical sensor structure, in which a first partial structure which is associated with the sensor structure is produced at the same time as a second partial structure which is associated with the circuit, a process variation of the first partial structure being performed in order to adjust a structure property of the sensor structure while the second partial structure remains the same.

Abstract: It is an object of the present invention to provide a small, yet high sensitivity semiconductor device. A semiconductor pressure sensor 1 includes an SOI substrate 2 on which a diaphragm 3 is formed and four piezo resistor elements R1 to R4 provided on the SOI substrate 2. Of the piezo resistor elements R1 to R4, two mutually facing piezo resistor elements R1 to R4 are arranged across the inside and outside of the diaphragm 3 so as to satisfy a relationship of 0.5<Leff/L<1, where L is the overall length and Leff is the length from the inside to edge of the diaphragm 3.

Abstract: A pressure sensor comprises: a case body including a pressure introduction port; a sensor chip including a top surface, a bottom surface, a sensing member disposed on the top surface and a concave member disposed on the bottom surface; a ceramic substrate including a front surface, a rear surface, a front opening disposed on the front surface and a rear opening disposed on the rear surface; and the gel member. The sensor chip is disposed on the front opening. The case body accommodates the ceramic substrate. The rear opening is coupled with the port. The gel member is disposed in the front and rear openings, and covers the concave member. The concave member receives a pressure of a pressure medium, which is introduced in the port, via the gel member. The sensing member detects the pressure.

Abstract: A pressure probe includes a longitudinal tubular housing symmetrically disposed about a central axis and having an ultra miniature conical front end and an opened back end. A plurality of aperture ports having an opening are disposed about the front end. A plurality of ultra small leadless transducers has a central active deflecting area in a semiconductor substrate, and a layer of oxide on a bottom surface. At least one sensor network is disposed within the active area on the oxide layer. A glass contact wafer is bonded to the non-deflecting portion of sensing network and has a number of apertures surrounding the active area suitable for interconnection with header. A header encloses each transducer and is of a shape and size to be positioned in an associated aperture port of the probe housing. At least one lead is coupled to a header pin extending from bottom of the aperture and directed through the bottom opening into the hollow of the probe housing.

Abstract: A pressure sensor for sensing a fluid pressure comprising: a first chamber including a first conductive membrane, wherein a fluid is sealed within the first chamber at a reference pressure such that the first conductive membrane deflects from pressure differences between the reference and the fluid pressure; a second chamber including a second conductive membrane sealed from the fluid pressure, wherein the second membrane deflects in response to a change in temperature which the pressure sensor is exposed thereto; and a circuit in electrical communication with the first and second conductive membrane, the circuit being configured to obtain a first and second signal from the first and second conductive membranes respectively, the first and second signals being indicative of the deflection of the first and second conductive membranes, wherein the circuit adjusts the first signal by the second signal to generate an output signal indicative of the fluid pressure.

Abstract: This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

Abstract: A pressure sensor includes a pressure detecting element for detecting a pressure, a circuit board having an electrical circuit to be connected to the pressure detecting element, and a housing having a housing member and a cover. The housing member partitions at least a part of a first space for accommodating the pressure detecting element and at least a part of a second space for accommodating the circuit board such that the first space and the second space are separated from each other. The cover partitions at least a part of a remainder of each of the first space and the second space.

Abstract: Provided are an interdigitated electrode (IDE) for an electronic device, which includes a plurality of anodes and a plurality of cathodes arranged radially in an alternating fashion for electrical insulation from one another, and an electronic device using the same. The IDE in which the anodes and the cathodes are arranged radially in an alternating fashion is fabricated and applied to the electronic device, so that the entire fabrication process can be simplified compared to that of a typical electronic device in which an upper electrode is different from a lower electrode. Also, circular or polygonal IDEs can be applied to systems that are driven or measure values on their central axes, thereby enhancing the performance and efficiency of the systems. Furthermore, the circular or polygonal IDEs can be employed in systems such as acoustic sensors, pressure sensors, micro-speakers, biological sensors, and acceleration sensors, so that the structure and operation of the systems can be simplified.

Abstract: A semiconductor-based pressure sensor adapted for enhanced operation with controls electronics includes a pressure transducer having an output formed on a silicon die and an amplifier having an input and an output and fabricated on the silicon die next to the pressure transducer. The pressure transducer's output is provided to the amplifier's input via electrical connection. Output from the amplifier is connectable to a controller such as an ASIC.

Abstract: The invention provides an electrical conductive composite material having superior thermal and electrical conductive performances. The electrical conductive composite material can be obtained by curing a mixture of a liquid elastic polymeric material and a magnetic compound fluid, which is prepared by dispersing Ni powder and Cu powder in a magnetic fluid, in a magnetic field. In the electrical conductive composite material, network cluster is formed by aggregation of Cu particles and Ni particles.

Abstract: A pressure probe includes a longitudinal tubular housing symmetrically disposed about a central axis and having an ultra miniature conical front end and an opened back end. A plurality of aperture ports having an opening are disposed about the front end. A plurality of ultra small leadless transducers has a central active deflecting area in a semiconductor substrate, and a layer of oxide on a bottom surface. At least one sensor network is disposed within the active area on the oxide layer. A glass contact wafer is bonded to the non-deflecting portion of sensing network and has a number of apertures surrounding the active area suitable for interconnection with header. A header encloses each transducer and is of a shape and size to be positioned in an associated aperture port of the probe housing. At least one lead is coupled to a header pin extending from bottom of the aperture and directed through the bottom opening into the hollow of the probe housing.

Abstract: The invention provides for a method of sensing pressure with a pressure sensor having a sensor membrane and a compensation membrane. The pressure sensor also includes a power supply, a controller; and a charge amplifier, a charge injector and two switches arranged in signal communication with the controller. The method includes the step of connecting the charge amplifier to the switches via a sensor capacitor Cs in parallel with a reference capacitor Cr in parallel with a parasitic capacitance Cp to ground, the charge injector and charge amplifier arranged in parallel connection between the capacitors and the controller. The method also includes the step of operating the switches, via the controller, to determine a charge imbalance indicative of a pressure difference between the sensor and compensation membranes.

Abstract: A semiconductor sensor component including a housing with a cavity and a sensor chip and a method for producing the same are described herein. The housing includes an opening to the surroundings of the housing and the sensor chip includes a sensor region which faces the opening. The sensor chip is embedded in the cavity of the housing into a rubber-elastic layer with its rear side and its edge sides, where the rubber-elastic layer includes cleavable included organometallic or inorganic metallic complexes. The metals of the complexes lie in a freely accessible manner on the top side of the rubber-elastic layer and form metallic nuclei for wiring lines which electrically connect the sensor region of the sensor chip to contact pads in the cavity of the cavity housing.

Abstract: A capacitive pressure sensor includes a substrate assembly. The substrate assembly includes a conductive layer and defines a plurality of channels terminating in closed ends. A conductive membrane is mounted to the substrate assembly so that a sealed reference chamber including the channels is defined by the conductive membrane and the substrate assembly. A cap is mounted relative to the substrate assembly and defines one or more apertures so that an antechamber is defined by the cap and the conductive membrane. Differential pressure between the reference chamber and antechamber can cause deflection of the conductive membrane which, in turn, varies the capacitance between the conductive membrane and conductive layer.

Abstract: A pressure sensor for sensing a fluid pressure in harsh environments such as the air pressure in a tire formed on a wafer substrate. Associated circuitry deposited in CMOS layers on the wafer substrate has a conductive layer at least partially overlying the associated circuitry, the conductive layer forming a first electrode of the capacitative sensor. A conductive membrane at least partially overlies the conductive layer, and is spaced from it to form a second electrode of the capacitative sensor. The conductive membrane separates fluid at a reference pressure and fluid at the pressure to be sensed such that the associated circuitry is configured to convert the deflection of the conductive membrane into an output signal indicative of the fluid pressure. The conductive membrane is at least partially formed from a ceramic material to provide corrosion and wear resistance.

Abstract: The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

Abstract: A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.

Abstract: There is provided a method for monitoring a vacuum system such as that used in a dairy milking system. Several independent measurements are made whereby a long term degradation of the vacuum pump or other component in the vacuum system may be identified before system performance drops below acceptable limits. Baseline data generated when the vacuum system is known to be in good working order. The baseline data is used to compare operation of the vacuum system. An alarm signal or other indication may be generated to alert an operator that vacuum system performance has degraded beyond an acceptable limit. Such predictive failure techniques allow maintenance to be performed on the vacuum system long before performance degrades to a point where a system becomes inoperative.

Abstract: A pressure sensor is provided, which includes a case, a sensing chip located in the case for detecting pressure, and a protective material for covering and protecting the sensing chip in the case. Corners of the case, which are in contact with the protective material are each formed into a rounded shape. A curvature radius of each of the corners is adapted to be 0.5 mm or more.

Abstract: A capacitive pressure sensor includes a substrate assembly having a conductive layer. A conductive membrane is mounted to the substrate assembly so that a sealed reference chamber is defined by the conductive membrane and the substrate assembly. A cap is arranged on the substrate assembly and defines one or more apertures so that an antechamber is defined between the cap and the conductive membrane. Differential pressure between the reference chamber and antechamber can cause deflection of the conductive membrane which, in turn, varies the capacitance between the conductive membrane and the conductive layer.

Abstract: A semiconductor device is equipped with a semiconductor sensor chip for detecting pressure variations that is arranged inside of a hollow cavity of a housing, wherein an opening is formed in a prescribed region of the housing, which is not positioned opposite to the semiconductor sensor chip, so as to allow the hollow cavity to communicate with an external space. The opening is formed using at least one through-hole having a thin slit-like shape. Alternatively, the opening is formed using plural through-holes each having a desired shape such as a thin slit-like shape, a circular shape, and a sectorial shape. Thus, it is possible to reduce negative influences due to environmental factors such as dust and sunlight with respect to the semiconductor sensor chip.

Abstract: Silicon-based high pressure sensor modules are manufactured in an array arrangement, incorporating a low temperature cofired ceramic (LTCC) substrate. The LTCC substrate can withstand high pressures. Bossed containers filled with oil are mounted on the substrate in an array. These bossed containers house the sensor cells which are composed of a sensor handle wafer and a diaphragm. The top surface of these bossed containers are flexible and deflect under pressure. By controlling the surface area and the thickness of the top surface, the pressure sensors can be configured to measure a wide range of pressures. The oil transfers pressure from the bossed container to the diaphragm of the sensor cell while protecting the sensor cell from high pressures and harsh media.

Abstract: System and apparatus for measuring pressure comprising a microelectronic device, an interface member attached to the microelectronic device, a pressure sensor having a diaphragm responsive to external pressure exerted upon the diaphragm, wherein the interface member is positioned between the microelectronic device and the pressure sensor and is attached to the pressure sensor providing a first cavity between the pressure sensor diaphragm and the interface member and wherein the pressure in the first cavity is set at an initial predetermined pressure.

Abstract: Systems and methodologies that provide for multi-parameter sensing via micro fabricated sensing structures operatively connected to oscillators, each micro-fabricated sensing structure in part defines a frequency of a respective associated oscillator. Output from such oscillators can be combined together, and then AC coupled with an incoming DC voltage that feeds the oscillators. The wiring arrangement includes two conducting paths/wires that carry a direct current to the oscillators as well as outputting the combined signal to external measurement devices. In addition, arrangements for pressure sensors are provided that mitigate errors from temperature variations and the induced stress/strains.

Abstract: A pressure measuring device for detecting a pressure to be measured of a medium, having a pressure housing; a converter situated in the pressure housing for converting a mechanical force produced by the pressure to be measured into an electrical signal; an output unit for outputting the electrical signal; a separator for separating the medium from the converter; and a transmission device for transmitting the force produced by the pressure to be measured to the converter.

Abstract: A semiconductor pressure sensor is provided with a semiconductor pressure sensor part that converts a pressure to an electrical signal, a sensor module in which said semiconductor pressure sensor part and a terminal of which part is extended to the outside are insert-molded with a first resin, and an outer case in which said sensor module is contained, and said sensor module is further insert-molded with a second resin to form a connector portion, and the semiconductor pressure sensor is characterized in that the exposed portion of the sensor module from the second resin, and the boundary between the exposed portion of the sensor module and the second resin are covered with an adhesive.