Abstract: Even when a strain sensor chip and an object to be measured are bonded to each other by using a metallic bonding material such as solder, the metallic bonding material shows the creep behavior when used under high temperature environment of, for example, 100° C. or higher, and therefore, the strain detected by the strain sensor chip is gradually reduced, and the strain is apparently reduced. In the strain sensor chip mounting structure which is one embodiment of the present application, a strain sensor chip is fixed onto a surface to be measured of the object to be measured via a metallic bonding material. And, the metallic bonding material is bonded to a metallic film that is formed on a side surface of the strain sensor chip. In this manner, temporal change in a measurement error can be suppressed.

Abstract: An apparatus for sensing strain or stress includes a body including magnetic shape-memory alloy (MSMA) material, having a first axis. A first drive coil and first sensor coil are wound around the body about the first axis. The drive coil is coupled to a power source and configured to generate an alternating magnetic field on the body. The first sensor coil is configured to detect changes in inductance of the body due to changes in magnetic permeability of the body with deformation thereof.

Abstract: The present disclosure relates to an element for sensing strain, stress or force. The sensing element comprises a substrate, a pair of electrodes on the substrate, and a network of carbon nanotubes for sensing the strain, stress or force within a structure. The network of carbon nanotubes defines at least in part an electrical path between the electrodes of the pair, and the electrical path has a resistance which is altered by the sensed strain, stress or force. Combining a plurality of sensing elements coupled to a common substrate forms a sensing system.

Abstract: In the method for measuring a micromechanical semiconductor component which comprises a reversibly deformable measuring element sensitive to mechanical stresses, which is provided with electronic circuit elements and terminal pads for tapping measurement signals, the measuring element (18) of the semiconductor component (16), for the purpose of determining the distance/force and/or distance/pressure characteristic curve thereof, is increasingly deformed by mechanical action of a plunger (32) which can in particular be advanced step by step. After a or after each step-by-step advancing movement of the plunger (32) by a predetermined distance quantity, the current measurement signals are tapped via the terminal pads (24). The semiconductor component (16) is qualified on the basis of the obtained measurement signals representing the distance/force and/or distance/pressure characteristic curve.

Abstract: In one embodiment, an apparatus includes a touch sensor that includes a mesh of conductive material configured to extend across a display that includes multiple pixels that each include sub-pixels. The mesh includes multiple first and second lines of conductive material. The first lines are substantially parallel to each other, and the second lines are substantially parallel to each other. Each of the pixels has a first pixel pitch (PPx) along a first axis and a second pixel pitch (PPy) along a second axis that is substantially perpendicular to the first axis. The first pixel pitch is a distance between corresponding features of two adjacent pixels along the first axis, and the second pixel pitch is a distance between corresponding features of two adjacent pixels along the second axis. Each of the sub-pixels has a first sub-pixel pitch (SPPx) along the first axis.

Abstract: A mechanical quantity measuring device (semiconductor strain sensor) has a semiconductor chip including a plurality of piezoresistive elements formed on a front surface of a semiconductor substrate, a lead wire unit electrically connected to a plurality of electrodes of the semiconductor chip, and a plate member joined to a rear surface of the semiconductor chip. Further, the plate member includes a first region facing the rear surface of the semiconductor chip and a second region provided adjacent to the first region, and a thickness of the plate member in the first region is made larger than a thickness in the second region.

Abstract: A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured.

Abstract: The fastener tension monitoring system provides for automatic notification when a structural tensile fastener, such as a bolt, is loosened. The system incorporates piezoelectric material in the core of the fastener shank or deposited around the shank. The piezoelectric material communicates electrically with an electrical storage device, a microprocessor, and a transmitter installed on the fastener head. Vibration or other changes in the tensile force developed by the fastener result in electrical impulses being generated by the piezoelectric material, generating electrical energy that is stored in the storage device and used to operate the microprocessor. In the event that an out of tolerance condition is sensed by the microprocessor, the transmitter is activated to send a signal to that effect. A receiver and computer are provided to monitor any such signals. The piezoelectric material may include pyroelectric material as well for the generation of electrical energy due to temperature changes.

Abstract: A device can have an electrostatic MEMS actuator and a capacitive sensor in electrical communication with the electrostatic MEMS actuator. The capacitive sensor can be configured to determine a capacitance of the electrostatic MEMS actuator while a force is being applied to the electrostatic MEMS actuator as the electrostatic MEMS actuator is being actuated. The device can be used to construct a keyboard having tactile feedback, for example.

Abstract: A sensor and method of sensing dimensional changes, stress changes or pressure changes on a substrate uses a sensor in the following manner. Temporarily and non-destructively attach a piezoresistant sensor to a surface. The piezoresistant sensor has an electrically conductive elastic body having at least one pair of opposed ends, and the elastic body contains conductive nanotubes homogeneously distributed therein. The elastic body has at least one surface with two opposed ends and electrodes at each of the opposed ends. A current is passed through the elastic body between the two electrodes. The current passing through the elastic body is sensed (e.g., a voltmeter). A mechanical step is performed with or on the substrate, and the sensor measures changes in the current between the electrodes, indicating strain or pressure on the sensor.

Abstract: A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.

Abstract: A measurement unit for tensile or compressive stress can includes a CCD camera for detecting an interference light, the interference light being formed with a measurement beam from a measured region and a reference beam from a reference mirror. A first objective lens can have the reference mirror. An image processing apparatus can measure the three-dimensional shape of the measured region from the position of the first objective lens at which the interference light provides the maximum contrast and can measure the distance between two gauge points on the basis of the three-dimensional shape. When strain is generated on a micromaterial, the strain against the measured tensile stress is measured on the basis of the tensile stress and the distance between the two gauge points.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a semiconductor substrate, an insulating gate field-effect transistor, and a strain gauge unit. The semiconductor substrate is placed on the substrate and has first and second regions. The insulating gate field-effect transistor is provided in the first region of the semiconductor substrate. The strain gauge unit has a long metal resistor, a first insulating film and a second insulating film. The long metal resistor is provided inside of an upper surface of the semiconductor substrate in the second region of the semiconductor substrate. The first insulating film is provided between the semiconductor substrate and the metal resistor and extends up to the upper surface of the semiconductor substrate. The second insulating film is provided above the first insulating film across the metal resistor.

Abstract: Embodiments relate to stress sensors and methods of sensing stress. In an embodiment, a stress sensor comprises a vertical resistor. The vertical resistor can comprise, for example, an n-type resistor and can have various operating modes. The various operating modes can depend on a coupling configuration of terminals of the resistor and can provide varying piezo-coefficients with very similar temperature coefficients of resistances. Comparisons of resistances and piezo-coefficients in differing operating modes can provide a measure of mechanical stresses acting on the device.

Abstract: A pressure sensor including: a MEMS resonator; a sweeping unit which sweeps a frequency of an excitation signal in a predetermined direction of sweeping, over a predetermined frequency range including a resonance frequency f0 of a vibrator in the MEMS resonator, while outputting the excitation signal to the MEMS resonator; an integrating unit which inputs a vibrating-state information signal as a characteristic amount indicative of a vibrating state of the vibrator from the MEMS resonator while the sweeping unit sweeps the frequency, integrates a plurality of the vibrating-state information signals at different frequencies of the excitation signal, and outputs the integrated value; and a conversion unit adapted to determine a pressure acting on the MEMS resonator, based on the integrated value.

Abstract: The invention concerns a pressure transducer comprising a deflecting membrane, said membrane comprising two piezoresistors (10, 11) of different types, said piezoresistors being arranged such that a same stress or a same strain is applied on said piezoresistors and said piezoresistors (10, 11) yield changes in resistance, wherein a piezoresistor of a first type (10) is positioned such that its current direction is perpendicular to the stress direction (trans verse) and a piezoresistor of a second type is parallel to the stress direction (longitudinal), allowing, when a tensile stress is applied to the transducer, said piezoresistor of the first type to increase its resistance and said piezoresistor of the second type to decrease the resistance; or when a compressive stress is applied to the transducer, said piezoresistor of the first type to decrease its resistance and said piezoresistor of the second type to increase the resistance; wherein said piezoresistor of the first type (10) has a specific width and a

Abstract: A micromechanical component includes: an adjustable element connected to a holder at least via a spring; a first sensor device with at least one first piezo-resistive sensor element, which first sensor device provides a first sensor signal relating to a first mechanical stress, the first piezo-resistive sensor element being situated on or in an anchoring region of the spring; and a second sensor device with at least one second piezo-resistive sensor element, which second sensor device provides a second sensor signal relating to a second mechanical stress, the second piezo-resistive sensor element being situated on or in an anchoring region of the spring.

Abstract: A system and method employing a piezoelectric sensor for quasi-static force measurement substantially free of drift and with improved low-frequency response. The output signal from the sensor is sampled and integrated using digital techniques that include a drift compensation algorithm. The algorithm continually monitors the sensor output and estimates bias errors that will cause the output to drift.

Abstract: A pressure sensor of the MEMS and/or NEMS type is disclosed, including: at least one first deformable cavity (20) to receive pressure variations from an ambient atmosphere, this first deformable cavity being made in a first substrate and including at least one mobile or deformable wall (25), arranged at least partially in the plane parallel to the first substrate, called plane of the sensor, pressure variations from an ambient atmosphere being transmitted to said cavity, a detector (24, 24?) for detecting a displacement or deformation, in the plane of the sensor, of said mobile or deformable wall, under the effect of a pressure variation of the ambient atmosphere.

Abstract: A force sensor system includes a substrate, a cover, a sensor, and a spherical force transfer element. The cover is coupled to the substrate, and has an inner surface, an outer surface, an opening extending between the inner and outer surfaces, and a wall structure extending from the inner surface that defines a sensor cavity between the inner surface and the substrate. The sensor is mounted on the substrate, is disposed within the sensor cavity, and is configured to generate a sensor signal representative of a force supplied to the sensor. The spherical force transfer element is disposed partially within the sensor cavity, is movable relative to the cover, extends from the opening in the cover, and engages the sensor. The spherical force transfer element is adapted to receive an input force and is configured, upon receipt of the input force, to transfer the input force to the sensor.

Abstract: A flexible substrate has a major surface and a sensor attached to and aligned with the major surface of the substrate. The sensor may have an elastic body containing conductive nanotubes homogeneously distributed therein to form a conductive path and at least two electrodes in electrical connection with the conductive path. Balloons and flexible elements used in medical procedures are particularly useful.

Abstract: A method for determining, in a first semiconductor material wafer having at least one through via, mechanical stress induced by the at least one through via, this method including the steps of: manufacturing a test structure from a second wafer of the same nature as the first wafer, in which the at least one through via is formed by a substantially identical method, a rear surface layer being further arranged on this second wafer so that the via emerges on the layer; measuring the mechanical stress in the rear surface layer; and deducing therefrom the mechanical stress induced in the first semiconductor material wafer.

Abstract: A tactile sensor unit is provided, which includes a substrate; a coat formed on the substrate; and a cantilever beam structure having one end fixed to the substrate and curved to rise in such a direction that the other end of the cantilever beam structure is farther from the substrate than the one end. The tactile sensor unit detects a load applied to the coat. The cantilever beam structure is capable of resonating at a first resonant frequency and a second resonant frequency which is different from the first resonant frequency. The tactile sensor unit further includes a computation section for calculating a directional component of the load based on a change ratio of the first resonant frequency obtained in accordance with a change in the load and a change ratio of the second resonant frequency obtained in accordance with the change in the load.

Abstract: This disclosure provides systems, methods and apparatus for assessing a surface using a piezoelectric element. In one aspect, the method includes applying a device to the surface, wherein the device includes at least one piezoelectric element and at least one EMS device, wherein the EMS device includes a conductive first layer separated from a conductive second layer, and wherein the piezoelectric element is electrically coupled to the EMS device such that a force applied to the piezoelectric element results in a voltage applied across the first and second layers.

Abstract: A strain monitoring system including an array of semiconductor strain gauges. Each strain gauge in the array of strain gauges includes a lithographically fabricated 4-resistor bridge for providing a voltage potential corresponding to the strain in the bridge and thin film transistors to provide addressability to each 4-resistor bridge in the array. After completion of the array of strain gauges, in preferred embodiments the array of strain gauges are transferred to polyimide film which is in turn bonded to a surface region of the component to be tested for strains. Each bridge provides voltage signals corresponding to the strain to which the material under the bridge is being subjected. In preferred embodiments control and data acquisition function are separated from the semiconductor strain gage array. Preferred embodiments the system are utilized to monitor strains on components of aircraft, especially light weight robotic aircraft.

Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.

Abstract: A method of manufacturing a flexible display device for sensing bending that includes forming a lower electrode layer, which includes a plurality of lower electrodes spaced apart from each other on a substrate, forming an insulation layer on the lower electrode layer, forming holes in the insulation layer to expose at least a part of each of the plurality of lower electrodes, and forming an upper electrode layer, which includes a plurality of upper electrodes that are spaced apart from each other on the insulation layer and that fill the holes in the insulation layer. At least two conductive units including the lower electrode layer, the insulation layer, and the upper electrode layer are formed to face each other on a substrate of a non-display unit that is arranged near a boundary of the display device.

Abstract: A sensing insert device (100) is disclosed for measuring a parameter of the muscular-skeletal system. The sensing insert device (100) can be temporary or permanent. Used intra-operatively, the sensing insert device (100) comprises an insert dock (202) and a sensing module (200). The sensing module (200) is a self-contained encapsulated measurement device having at least one contacting surface that couples to the muscular-skeletal system. The sensing module (200) comprises one or more sensing assemblages, electronic circuitry (307), an antenna (2302), and communication circuitry (320). The sensing assemblages are between a top plate (1502) and a bottom plate (1504) in a sensing platform (121). The sensing assemblages comprise a load disc (2004) and a piezo-resistive sensor (2002) to measure the parameter. An elastic support structure or springs (1108) is coupled between the top plate (1502) and the bottom plate (1504) to prevent cantilevering of a surface.

Abstract: A sensor device includes at least one sensor device coupled to a substrate. A solder pad interface includes a plurality of steps, with at least a portion of the steps positioned at different planes, each of a step having a solder pad. A cable with a plurality of cable leads, is configured for each of a cable lead to be coupled to a solder pad.

Abstract: The present invention is directed to a device for measuring a deformation ratio of a structure which includes a photonic crystal layer containing nanoparticles aligned at a certain interval. The device is useful for detecting when various industrial structures are deformed by a working load. The presence of deformation and the deformation ratio in the structures may be simply and easily measured by measuring the change of structural color or magnetic flux in the device. The device may be useful to prevent accidents due to excessive deformation in structures.

Abstract: A method for producing a contact stress sensor that includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element.

Abstract: A shear force detection device for detecting a shear force includes: a support body including an opening defined by a pair of straight parts perpendicular to a detection direction of the shear force and parallel to each other; a support film on the support body and closing the opening, the support film having flexibility; a piezoelectric part on the support film and extending astride an inside and outside of the opening and along at least one of the pair of straight parts of the opening when viewed in a plane in which the support body is seen in a substrate thickness direction, the piezoelectric part being bendable to output an electric signal; and an elastic layer covering the piezoelectric part and the support film.

Abstract: A shear force detection device for detecting a shear force includes: a support body including an opening defined by a pair of straight parts perpendicular to a detection direction of the shear force and parallel to each other; a support film on the support body and closing the opening, the support film having flexibility; a piezoelectric part on the support film and extending astride an inside and outside of the opening and along at least one of the pair of straight parts of the opening when viewed in a plane in which the support body is seen in a substrate thickness direction, the piezoelectric part being bendable to output an electric signal; and an elastic layer covering the piezoelectric part and the support film.

Abstract: A MEMS composite transducer includes a substrate, a MEMS transducer, and a compliant membrane. Portions of the substrate define an outer boundary of a cavity. A first portion of the MEMS transducing member is anchored to the substrate. A second portion of the MEMS transducing member extends over at least a portion of the cavity and is free to move relative to the cavity. The compliant membrane is positioned in contact with the MEMS transducing member. A first portion of the compliant membrane covers the MEMS transducing member and a second portion of the compliant membrane is anchored to the substrate.

Abstract: A deflection sensor is disclosed herein. The deflection sensor includes a nanotube film adjacent to a substrate, and first and second contacts electrically connectable with the nanotube film. Methods of making and using the deflection sensor are also disclosed.

Abstract: A device for detecting the thinning down of the substrate of an integrated circuit chip, including, in the active area of the substrate, bar-shaped diffused resistors connected as a Wheatstone bridge, wherein: first opposite resistors of the bridge are oriented along a first direction; the second opposite resistors of the bridge are oriented along a second direction; and the first and second directions are such that a thinning down of the substrate causes a variation of the imbalance value of the bridge.

Abstract: Strain gauge. The gauge includes a substrate and a thin film of overlapping, two-dimensional flakes deposited on the substrate. Structure responsive to conductance across the film is provided whereby a strain induced change in overlap area between neighboring flakes results in a change in conductance across the film. In a preferred embodiment, the two-dimensional flakes are graphene.

Abstract: Stress sensors and stress sensor integrated circuits using one or more nanowire field effect transistors as stress-sensitive elements, as well as design structures for a stress sensor integrated circuit embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and related methods thereof. The stress sensors and stress sensor integrated circuits include one or more pairs of gate-all-around field effect transistors, which include one or more nanowires as a channel region. The nanowires of each of the field effect transistors are configured to change in length in response to a mechanical stress transferred from an object. A voltage output difference from the field effect transistors indicates the magnitude of the transferred mechanical stress.

Abstract: A strain sensing apparatus including a deformable substrate is presented. The deformable substrate is configured to detect a strain of the body that can be coupled to the deformable substrate. Sometimes, the deformable substrate is a flexible substrate having an upper surface and an opposite lower surface. The lower can be coupled to the body. There are sensing elements fabricated within the flexible substrate and proximate to the upper surface to detect properties of the body. The strain sensing apparatus is able to detect different strain modes, such as whether the strain is the result of bending of a body or a uniaxial elongation. Furthermore, the apparatus is small and less fragile than most conventional sensors, making it easy to use.

Abstract: An impact sensor includes a piezoelectric transducer operatively connected to a chromic device. The chromic device includes a chromic material that changes from a first color state to a second color state in response to electric power generated by the piezoelectric transducer when exposed to a given level of impact force. The chromic material is bistable so that the chromic material remains in the second color state for a significant amount of time. An impact force to which the sensor has been subjected may be quantified by observing the chromic device. In one embodiment, the chromic material is an electrochromic material, such as a viologen, that changes through a color gradient of light transmission states from the first color state to the second color state. A printed color gradient may be used to aid in quantifying the impact force. In another embodiment, the chromic device includes a thermochromic material.

Abstract: A sensor device includes at least one sensor device coupled to a substrate. A solder pad interface includes a plurality of steps, with at least a portion of the steps positioned at different planes, each of a step having a solder pad. A cable with a plurality of cable leads, is configured for each of a cable lead to be coupled to a solder pad.

Abstract: A structural health monitoring arrangement includes a component formed of fiber reinforced composite material with a plurality of electrical conducting fibers intrinsic to the composite defining electrical paths that run through the composite. The paths act as sensing paths running through the material and a detector watches for changes in electrical property indicative of a structural event. The paths may be configured as an open or a closed node grid whose electrical continuity is monitored directly or indirectly. Alternatively they may be fibers having a piezoresistive property and the changes in resistance may be monitored.

Abstract: Because of stress occurring due to a change in temperature, and presence of heat distribution on a semiconductor substrate, and a dopant dosage gradient, an offset output occurs to a Wheatstone bridge circuit intended for detection of strain, posing a problem. To solve the problem, diffusion resistors are disposed in the form of a matrix, and bridge resistors Rv1, Rv2 each are formed by selectively connecting diffusion resistors disposed in each odd column, in series with each other, while Rh1, Rh2 each are formed by selectively connecting diffusion resistors disposed in each even column, in series with each other.

Abstract: A MEMS resonator 100 including a substrate 112; an vibrator 102 including an mechanically vibrating part and a fixed part; at least one electrode 108 that is close to the vibrator and has an area overlapping with the vibrator across a gap 109 in a direction perpendicular to a surface of the substrate; and a pressure transferring mechanism to displace the at least one electrode according to an externally applied pressure so as to change the gap; is connected to a detection circuit that detects transmission characteristics of an AC signal from an input electrode to an output electrode, the input and output electrodes being one and the other of the vibrator 102 and the at least one electrode 108, and the pressure is detected based on the transmission characteristics of the AC signal that is detected by the detection circuit.

Abstract: Methods and apparatus are described to use real-time measurement systems to detect the onset of compression induced microfracturing of fiber-reinforced composite materials. Measurements are described to detect the onset of compression induced microfracturing of fiber-reinforced composite materials to prevent catastrophic failures of aircraft components containing such materials. Methods and apparatus are described to prevent fluids and gases from invading any compression induced microfractures by coating surfaces of fiber-reinforced materials to reduce the probability of failure of such fiber-reinforced materials.

Abstract: The invention relates to a sensor as a built-in component of an object, especially an elastic object, the sensor comprising a polymer material containing electroconductive additives according to the invention and thereby acting as an expansion sensor (2), in that it measures the static and dynamic expansions of the object in relation to the acting forces and also monitors the changes of the polymer material generated by the static and dynamic expansions of the object over time. The invention also relates to a sensor arrangement (1) acting especially in combination with the following components: an expansion sensor (2), a fixed resistor (3), an analog/digital converter (4), a micro-controller comprising a memory (5), a radio interface (6), a controlled current/voltage source (7), an energy supply (8), a coupling coil (9), and a receiving unit (10).

Abstract: A new approach for building a stress-sensing rosette capable of extracting the six stress components and the temperature is provided, and its feasibility is verified both analytically and experimentally. The approach can include varying the doping concentration of the sensing elements and utilizing the unique behaviour of the shear piezoresistive coefficient (?44) in n-Si.

Abstract: Tension monitoring is described using a sensor which may exhibit an offset for which compensation may be provided to produce a zero voltage amplified output or to increase dynamic range. An arrangement determines whether a power reset is responsive to a battery bounce such that an initially-measured system start-up parameter can be retained. The start-up parameter is automatically saved at start-up if the power reset is responsive to a start-up from a shut-down condition. The start-up parameter may be a zero tension amplified output responsive to the sensor offset at zero tension. Protection of a tension data set is provided such that no opportunity for altering the data set is presented prior to transfer of the data set. A housing configuration forms part of an electrical power circuit for providing electrical power to an electronics package from a battery.

Abstract: A sensing device is provided for measuring flexural deformations of a surface. Such a sensing device may be used as a user interface in portable electronic devices. The sensing device comprises at least one cell. The cell comprises a first electrode, a central electrode, a second electrode, a first piezoelectric sensing layer placed between the first electrode and the central electrode, a second piezoelectric sensing layer placed between the central electrode and the second electrode, and a circuit connected to the first, second and the central electrodes. The circuit is configured to measure a first electrical signal between the first electrode and the central electrode, and a second electrical signal between the second electrode and the central electrode. At least one of the first electrical signal and the second electrical signal is responsive to an external stress applied on the sensing device.

Abstract: In one aspect, the present invention relates to a pressure sensing/force generating device comprising a non-planar substrate, a printed pressure sensitive element comprising (a) a piezoelectric material containing ink composition capable of producing a piezoelectric effect/piezoresistive effect and/or (b) a dielectric material containing ink composition capable of producing a capacitive effect. It also includes a first printed electrode comprising a conductive ink composition, and a second printed electrode comprising a conductive ink composition. The first and second electrodes are in electrical contact with the printed pressure sensitive element. The first and second printed electrodes and the printed pressure sensitive element collectively form a pressure sensitive junction, which is coupled to the non-planar substrate. The present invention further relates to medical devices comprising the pressure sensing/force generating device and methods of making such devices.