Multiple-type Spm, I.e., Involving Two Or More Spm Techniques (epo) Patents (Class 850/22)
Scanning tunnelling microscopy [stm] combined with atomic force microscopy [afm](epo) (Class 850/23)
-
Patent number: 11694868Abstract: According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: an objective lens configured to image multiple primary electron beams on a substrate by using the multiple primary electron beams; a separator configured to have two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field and configured to separate multiple secondary electron beams emitted due to the substrate being irradiated with the multiple primary electron beams from trajectories of the multiple primary electron beams by the electric field and the magnetic field formed; a deflector configured to deflect the multiple secondary electron beams separated; a lens arranged between the objective lens and the deflector and configured to image the multiple secondary electron beams at a deflection point of the deflector; and a detector configured to detect the deflected multiple secondary electron beams.Type: GrantFiled: January 4, 2022Date of Patent: July 4, 2023Assignee: NuFlare Technology, Inc.Inventors: Kazuhiko Inoue, Munehiro Ogasawara, Atsushi Ando
-
Patent number: 8850611Abstract: A method and system for performing simultaneous topographic and elemental chemical and magnetic contrast analysis in a scanning, tunneling microscope. The method and system also includes nanofabricated coaxial multilayer tips with a nanoscale conducting apex and a programmable in-situ nanomanipulator to fabricate these tips and also to rotate tips controllably.Type: GrantFiled: March 8, 2013Date of Patent: September 30, 2014Assignee: UChicago Argonne, LLCInventors: Volker Rose, Curt A. Preissner, Saw-Wai Hla, Kangkang Wang, Daniel Rosenmann
-
Patent number: 8763160Abstract: During a measurement in KFM mode of the surface potential of a material (P), a detection point (1) is arranged above a surface (S) of the material. Two piezoelectric actuators (2, 5) are used to monitor a mean distance of the detection point relative to the surface of the material and a mechanical oscillation of said point. During the measurement, a control voltage is applied between control electrodes (2a, 2b) of the piezoelectric actuator (2) which is dedicated to the mechanical oscillation of the detection point (1), said control voltage not having an alternative component to an angular frequency of electrical energization of said detection point. A result of the KFM measurement is therefore separate from operating parameters such as a projection angle used to perform closed-loop control and a value of the angular frequency of electrical energization. The invention thus provides absolute measurements of surface potentials.Type: GrantFiled: February 9, 2011Date of Patent: June 24, 2014Assignees: Centre National de la Recherche Scientifique—CNRS, Universite des Sciences et Technologies de LilleInventors: Thierry Melin, Didier Theron, Sophie Barbet, Dominique Deresmes, Heinrich Diesinger
-
Patent number: 8723116Abstract: A method of determining an applicable threshold for determining the critical dimension of a category of patterns imaged by atomic force scanning electron microscopy is presented. The method includes acquiring, from a plurality of patterns, a pair of images for each pattern; for each pair of images determining a reference critical dimension via an image obtained by a reference instrumentation and determining an empirical threshold applicable to an image obtained by a CD-SEM instrumentation such that the empirical threshold substantially corresponds to the reference critical dimension; determining a threshold applicable to a category of patterns, the threshold being determined from a plurality of empirical thresholds.Type: GrantFiled: May 3, 2013Date of Patent: May 13, 2014Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Johann Foucher, Mazan Saied
-
Patent number: 8695110Abstract: In a near-field scanning microscope using an aperture probe, the upper limit of the aperture formation is at most several ten nm in practice. In a near-field scanning microscope using a scatter probe, the resolution ability is limited to at most several ten nm because of the external illuminating light serving as background noise. Moreover, measurement reproducibility is seriously lowered by a damage or abrasion of a probe. Optical data and unevenness data of the surface of a sample can be measured at a nm-order resolution ability and a high reproducibility while damaging neither the probe nor the sample by fabricating a plasmon-enhanced near-field probe having a nm-order optical resolution ability by combining a nm-order cylindrical structure with nm-order microparticles and repeatedly moving the probe toward the sample and away therefrom at a low contact force at individual measurement points on the sample.Type: GrantFiled: August 15, 2012Date of Patent: April 8, 2014Assignee: Hitachi, Ltd.Inventors: Toshihiko Nakata, Masahiro Watanabe, Takashi Inoue, Kishio Hidaka, Motoyuki Hirooka
-
Patent number: 8689360Abstract: A probe head and a scanning probe microscope (SPM) including the probe head are provided. The probe head includes a plurality of cantilevers, each including a probe; and a holder on which the plurality of cantilevers are installed, wherein a cantilever facing a sample is changed by rotating the holder.Type: GrantFiled: August 7, 2012Date of Patent: April 1, 2014Assignee: Samsung Electronics Co., Ltd.Inventor: In-su Jeon
-
Patent number: 8635710Abstract: Optical information and topographic information of the surface of a sample are measured at a nanometer-order resolution and with high reproducibility without damaging a probe and the sample by combining a nanometer-order cylindrical structure with a nanometer-order microstructure to form a plasmon intensifying near-field probe having a nanometer-order optical resolution and by repeating approach/retreat of the probe to/from each measurement point on the sample at a low contact force.Type: GrantFiled: April 13, 2012Date of Patent: January 21, 2014Assignee: Hitachi, Ltd.Inventors: Toshihiko Nakata, Masahiro Watanabe, Takashi Inoue, Kishio Hidaka, Makoto Okai, Toshiaki Morita, Motoyuki Hirooka
-
Patent number: 8407811Abstract: In a scanning probe microscope, a nanotube and metal nano-particles are combined together to configure a plasmon-enhanced near-field probe having an optical resolution on the order of nanometers as a measuring probe in which a metal structure is embedded, and this plasmon-enhanced near-field probe is installed in a highly-efficient plasmon exciting unit to repeat approaching to and retracting from each measuring point on a sample with a low contact force, so that optical information and profile information of the surface of the sample are measured with a resolution on the order of nanometers, a high S/N ratio, and high reproducibility without damaging both of the probe and the sample.Type: GrantFiled: February 25, 2010Date of Patent: March 26, 2013Assignee: Hitachi, Ltd.Inventors: Toshihiko Nakata, Masahiro Watanabe, Takashi Inoue, Kishio Hidaka, Makoto Okai, Motoyuki Hirooka
-
Patent number: 8381311Abstract: The invention relates to a method and to a device for examining a test sample using a scanning probe microscope. According to the method a first and a second measurement using a scanning probe microscope are carried out on the test sample using a measuring probe system in which a measuring probe and another measuring probe are formed on a common measuring probe receptacle. During the first measurement, in relation to the test sample, the measuring probe is held in a first measurement position and the other measuring probe is held in another non-measurement position, and the test sample is examined with the measuring probe using a scanning probe microscope. After the first measurement, by displacing in relation to the test sample, the measuring probe is displaced from the measurement position into a non-measurement position and the other measuring probe from the other non-measurement position into another measurement position.Type: GrantFiled: May 16, 2008Date of Patent: February 19, 2013Assignee: JPK Instruments AGInventor: Torsten Jähnke
-
Patent number: 8272068Abstract: In a near-field scanning microscope using an aperture probe, the upper limit of the aperture formation is at most several ten nm in practice. In a near-field scanning microscope using a scatter probe, the resolution ability is limited to at most several ten nm because of the external illuminating light serving as background noise. Moreover, measurement reproducibility is seriously lowered by a damage or abrasion of a probe. Optical data and unevenness data of the surface of a sample can be measured at a nm-order resolution ability and a high reproducibility while damaging neither the probe nor the sample by fabricating a plasmon-enhanced near-field probe having a nm-order optical resolution ability by combining a nm-order cylindrical structure with nm-order microparticles and repeatedly moving the probe toward the sample and away therefrom at a low contact force at individual measurement points on the sample.Type: GrantFiled: February 26, 2008Date of Patent: September 18, 2012Assignee: Hitachi, Ltd.Inventors: Toshihiko Nakata, Masahiro Watanabe, Takashi Inoue, Kishio Hidaka, Motoyuki Hirooka
-
Patent number: 8181268Abstract: Optical information and topographic information of the surface of a sample are measured at a nanometer-order resolution and with high reproducibility without damaging a probe and the sample by combining a nanometer-order cylindrical structure with a nanometer-order microstructure to form a plasmon intensifying near-field probe having a nanometer-order optical resolution and by repeating approach/retreat of the probe to/from each measurement point on the sample at a low contact force.Type: GrantFiled: December 18, 2008Date of Patent: May 15, 2012Assignee: Hitachi, Ltd.Inventors: Toshihiko Nakata, Masahiro Watanabe, Takashi Inoue, Kishio Hidaka, Makoto Okai, Toshiaki Morita, Motoyuki Hirooka
-
Patent number: 7804067Abstract: When a characterization of a tip of a diamond stylus for working is needed, the tip of the diamond stylus for working used is observed by a high resolution scanning electron microscope of a high acceleration voltage under a steam atmosphere. When the tip of the diamond stylus for working is worn or when a shape of the tip of the stylus needs to be changed, the tip of the diamond stylus for working is worked by selectively irradiating an electron beam only to a necessary region by increasing an amount of steam and an amount of a current of the electron beam. When a working chip is strongly adhered to the diamond stylus for working and needs to be removed, the electron beam is selectively irradiated only to the working chip adhered to the tip of the diamond stylus for working to be removed under a xenon fluoride atmosphere.Type: GrantFiled: December 6, 2007Date of Patent: September 28, 2010Assignee: SII NanoTechnology Inc.Inventor: Osamu Takaoka
-
Publication number: 20100055349Abstract: The present invention is a method for localized chemical vapor deposition (CVD) for localized growing for example for carbon nanotubes (CNT), nanowires, and oxidation using a heated tip or an array of heated tips to locally heat the area of interest. As the tips moved, material such as CNTs grows in the direction of movement. The Scanning Probe Growth (SPG) or nanoCVD technique has similarities to the CVD growth; however it allows for controlled synthesis and direction and eliminates the need for masks.Type: ApplicationFiled: May 11, 2009Publication date: March 4, 2010Inventors: Angelo Gaitas, Bhaskar Mitra, Amar Basu, Weibin Zhu
-
Patent number: 7644447Abstract: Provided is a scanning probe microscope capable of precisely analyzing characteristics of samples having an overhang surface structure. The scanning probe microscope comprises a first probe, a first scanner changing a position of the first probe along a straight line, and a second scanner changing a position of a sample in a plane, wherein the straight line in which the position of the first probe is changed by using the first scanner is non-perpendicular to the plane in which the position of the sample is changed by using the second scanner.Type: GrantFiled: November 17, 2006Date of Patent: January 5, 2010Assignee: Park Systems Corp.Inventors: Sang-il Park, Yong-Seok Kim, Jitae Kim, Sang Han Chung, Hyun-Seung Shin, Jung-Rok Lee, Euichul Hwang
-
Patent number: 7597717Abstract: A scanning probe microscopy head may include a base portion, cantilevers coupled to the base portion, and at least one tip coupled to each of the cantilevers. At least two of the cantilevers and associated tips may be configured to perform a different scanning probe microscopy technique. The cantilevers may be positioned perpendicular to the base portion and may be coupled to the perimeter of the base portion. The base portion may include circuitry coupled thereto for providing electricity to the tips. The cantilevers may each be placed into a recessed slot along the perimeter of the base and secured to the base by a securing mechanism, such as a spring clip. The cantilevers may be operatively coupled to a linear positioner, such as a piezoelectric motor, coupled to the perimeter of the base for controlling the amount of protrusion of the cantilevers from the perimeter of the base.Type: GrantFiled: June 25, 2007Date of Patent: October 6, 2009Assignee: The United States of America as represented by the Secretary of the NavyInventors: Ryan P. Lu, Stephen D. Russell, Ayax D. Ramirez
-
Publication number: 20090205089Abstract: The invention relates to a method for examining a measurement object (2, 12), in which the measurement object (2, 12) is examined by means of scanning probe microscopy using a measurement probe (10) of a scanning probe measurement device, and in which at least one subsection (1) of the measurement object (2, 12) is optically examined by an optical measurement system in an observation region associated with the optical measurement system, wherein a displacement of the at least one subsection (1) of the measurement object (2, 12) out of the observation region which is brought about by the examination by means of scanning probe microscopy is corrected in such a way that the at least one displaced subsection (1) of the measurement object (2, 12) is arranged back in the observation region by means of a readjustment device which processes data signals that characterize the displacement.Type: ApplicationFiled: June 30, 2006Publication date: August 13, 2009Inventor: Torsten Jähnke