Abstract: A method for determining a value of a local contact potential difference by noncontact atomic force microscopy. For one or more cantilever positions above a surface of a sample: i) performing two atomic force microscopy measurements, using an oscillating cantilever, ii) thereby determining two distinct voltage values of DC voltage applied between the cantilever and the sample, and iii) obtaining a value of a local contact potential difference based, at least in part, on the two distinct voltage values determined. Wherein substantially similar distinct values indicate a substantially similar value of frequency shifts of cantilever oscillation, as measured for each of said distinct values.

Abstract: A method of measuring vibration characteristics of a cantilever in a scanning probe microscope (SPM). An excitation signal is generated by a forward and backward frequency sweep signal in a frequency range including a resonance frequency of the cantilever. The cantilever is vibrated by supplying the excitation signal to a vibrating portion of the cantilever. The largest amplitude of a displacement of the cantilever in a forward path and in a backward path is directly measured, and an intermediate value of a frequency between frequencies measured on the basis of the directly measured largest amplitude of the displacement of the cantilever is detected as the resonance frequency of the cantilever.

Abstract: A device for oscillation excitation of a leaf spring, which is fastened on one side in an atomic force microscope (AFM) and comprises semiconductor material, which has no piezoelectric properties, a free end to which a tip is attached, which is brought into contact with a sample surface to be examined. The present invention has the leaf spring connected at least sectionally to a metal layer to form a Schottky contact, and an electrical voltage or field source is provided, which generates an electrical AC voltage a vicinity or area of the Schottky contact.

Abstract: The present invention allows simple and sensitive detection of microimpurities, microdefects, and corrosion starting points which may be present in a material. A probe microscope has a function to sense ions diffused from a specimen in a liquid. A probe is caused to scan over a predetermined range on a specimen. Then, the probe is fixed to a particular position in a liquid so as to set the distance between the specimen and the probe to a given value at which the microstructure of the specimen surface cannot be observed. Thereafter, one of the current between the probe and a counter electrode and the potential between the probe and a reference electrode is controlled, and the other of the current and potential which varies in accordance with the control is measured. Thus, ions diffused from the specimen are sensed.

Abstract: The invention provides a scanning probe microscope capable of performing highly accurate three-dimensional profile measurement in a state in which no sliding of the probe or deformation of the sample substantially occurs.

Abstract: A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.

Abstract: A measuring scanning probe for scanning a surface to be measured, including a stylus so as to provide a measuring point at a first end of the stylus for scanning the surface to be measured and a base part that is to be fixedly connected to a scanning device. The stylus is movably suspended from the base part by one or more bending elements. The measuring scanning probe is substantially planar in shape. The stylus, the one or more bending elements, and the base part are located in a single main plane of the planar measuring scanning probe.

Abstract: A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.