Abstract: A positive working, thermally stable photoresist, comprising a light-sensitive orthoquinone diazide or naphthoquinone diazide and a polyamic acid condensation product of an aromatic dianhydride and an aromatic di-primary amine, and a support carrying a layer of said photoresist. After exposure, the image is developed in the layer with an alkaline aqueous developer and is unaffected by heating to 500.degree. C, thus allowing the use of the photoresist layer for plasma and sputter-etching as well as ion implantation.

Abstract: Compositions comprising (I) solvent-soluble, negative-acting, light-sensitive reaction products of (a) water-soluble diazo condensation products with (b) water-insolubilizing inorganic compounds therefor and (II) synthetic, film-forming oleophilic resins, which compositions can be coated onto suitable base sheet materials to form presensitized lithographic printing plates, proofs for multi-color printing, visual aids, printed circuits and the like.

Abstract: A light-sensitive layer transfer material and such layer disposed on a carrier, for use in screen-printing stencils, printed circuit boards, integrated circuits, intaglio printing plates, relief printing plates, proof prints and the like, which comprises an alkali-soluble phenolic resin, such as phenol-formaldehyde novolacs, an ester or an amide of an o-naphthoquinone-diazide sulphonic acid, such as the p-cumyl phenyl ester of 1,2-naphthoquinone-2-diazide-4-sulphonic acid, etc., and an acrylic resin, such as a polymer of an alkyl ester of acrylic acid or methacrylic acid.

Abstract: Etching indium patterns on insulating supports with the use of an etchant-resistant mask, by means of a solution of an acid to which ferric chloride has been added. Passivation of the bath is prevented by adding ferric chloride.

Abstract: A polyimide mask is used as an undercoat for a standard resist material during the patterning of an underlying thin film layer by plasma etching. The polyimide mask can withstand the conditions of reactive ion (plasma) etching so that it can be used as a protective coating when the thin film is subtractively etched by the plasma etching. The polyimide is particularly useful in processes using either positive or negative electron beam lithography which require sensitive resists.

Abstract: This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.

Abstract: Polymethyl methacrylate methacrylic acid (P[MMA/MAA]) copolymer powder is prebaked above 200.degree. C. The prebaked powder is dissolved in a suitable casting solvent. The insoluble material produced during prebaking is removed by filtration. Then the solution remaining is applied to a substrate, post-baked at a temperature less than or equal to the prebaking temperature to drive off the solvent, exposed to electron beam radiation, and developed in a developing solvent.

Abstract: An integrated circuit having a direct metal contact to a buried layer is fabricated by first diffusing said buried layer into a substrate and growing thereon an epitaxial layer. After emitter diffusion into the epitaxial layer and emitter oxidation, a sink hole is etched through the oxide mask, the epitaxial layer, and into the buried layer. An oxide layer is then grown over the surface of the sink hole; which oxide layer is then coated with a negative photoresist. The negative photoresist is exposed to collimated light at an incident angle which results in an unexposed area of photoresist at the bottom of the sink hole. The unexposed area is washed off during developing and the exposed oxide etched away, thereby exposing the buried layer. A metal may be deposited, for example, by evaporation, thus creating a direct metal contact to the buried layer.

Abstract: A method for effecting the thin section cure of an epoxy resin is provided, based on the use of a moisture sensitive dicarbonyl chelate of a Group IIIa-Va element. Rapid cure of the applied epoxy composition can be achieved under ultraviolet radiation.

Abstract: Manufacture of photosensitive material by a dispersion of particles of semiconducting metal oxide having a charge sign opposite to that of the substrate in the dispersion agent, which dispersion is provided on the substrate surface and adhered thereto. In a similar manner walls of a hole for electrical through-connections are made photosensitive as a pretreatment for metal-plating.

Abstract: Novel amides, preferably having a molecular weight in the range 1000 to 10,000, are prepared by acylating, partially or fully, amino groups in poly(ethylene imine) or poly(propylene imine) whereby amino-hydrogen atoms are replaced by groups R.sup.3 CH.dbd.CR.sup.2 CO--, where R.sup.3 denotes an aliphatic, cycloaliphatic, araliphatic, or heterocyclic group containing ethylenic unsaturation in conjugation with the indicated double bond and R.sup.2 denotes a hydrogen, chlorine, or bromine atom, a cyano group, or an alkyl group. Particularly preferred are such amides where R.sup.3 CH.dbd.CR.sup.2 CO-- denotes a sorbyl group and containing additional intramolecular linkages introduced by a difunctional reagent capable of reacting with aliphatic amino groups, such as a diepoxide or a di-isocyanate.The amides may be polymerized by means of actinic radiation and are useful in the preparation of printing plates and printed circuits.

Abstract: A method for depositing a metal on a surface is disclosed. The method comprises coating the surface with a sensitizing solution comprising at least a reducible salt of a non-noble metal to form a coated surface. The coated surface is exposed to a source of light radiation to form a catalytic layer capable of directly catalyzing the deposition of a metal thereon from an electroless metal deposition solution. The catalytic layer is treated with a fixing solution comprising an autocatalytic reducing agent for the non-noble metal ions of said reducible salt to at least stabilize the catalytic layer.

Abstract: An exposure method for exposing to a pattern a photosensitive material formed over a substrate having a reflective surface uses a light source having beam components of different wavelengths. The beam from the light source is used to project an exposure pattern upon the photosensitive material through a predetermined mask pattern to thereby form a combined standing wave pattern with the aid of the light beam incident on the photosensitive material and the light beam reflected by the reflective surface. The photosensitive material is disposed in the reduced peak value region of the combined standing wave pattern as the result of the interposition of a transparent layer between the reflecting surface and the photosensitive layer. Thus, the photosensitive material is pattern-exposed to a substantially uniform sensitizing energy.

Abstract: The invention relates to organic polymers which can be crosslinked under the action of light and which are suitable for carrying out photomechanical processes. These polymers are photochemically considerably more sensitive than known comparable polymers and their sensitivity can additionally also be further increased by means of a combination with sensitizers. The molecular weight is at least 1,000. The polymers contain, as light-sensitive groups, groups of the formula I ##STR1## wherein R and R.sub.1 independently of one another denote alkyl groups with at most 4 C atoms, or R and R.sub.1 conjointly denote the remaining part of a 5-membered to 6-membered carbocyclic ring.

Abstract: The development of high energy radiation exposed positive acrylate polymer resist layers by organic liquid developers, such as methyl isobutyl ketone, is improved by adding water to the ketone.

Abstract: Copolymers of glycidyl acrylate and allyl glycidyl ether and terpolymers derived from addition of glycidyl methacrylate to the polymerizable mixture, having an inherent viscosity within the range of about 0.09 to 0.28 and an epoxy equivalent of at least about 0.64 per 100 g. of polymer are provided which upon admixture with a catalyst which is a radiation-sensitive aryldiazonium salt of a complex halogenide, provides compositions suitable for use in a dry photopolymer positive imaging process. In the process, the polymer which is non-tacky at room temperature, together with the catalyst is applied to a substrate and exposed to an energy source for example, electromagnetic radiation through a transparency or mask. Following exposure, the coating is heated to the softening point of the unexposed portion of the coating and a powder or toner is applied thereto, the toner being adhered to only the tacky, nonexposed area of the coating, resulting in a pigmented image.

Abstract: In integrated circuit fabrication, a method is provided for forming metallic connectors through a layer of electrically insulative material. The method comprises forming a layer of electrically insulative material on a substrate and then forming a mask of photoresist material having a plurality of openings through which said insulative layer is exposed on said insulative layer. Then, the exposed portions of said insulative layer are removed by etching to form openings through which the underlying substrate is exposed, after which a first metal layer is deposited over the masked substrate. This metal layer is thinner than the insulative layer so that the openings in the insulative layer are only filled part way up with metal. Then, the photoresist mask is removed thereby removing the metal layer deposited on it to leave only the metal in the insulative layer openings.

Abstract: A light sensitive mass which contains a film former, which consists of 20 to 90 percent by weight of a vinylpyrrolidone-vinyl acetate copolymer or a polyvinyl pyrrolidone or both and 10 to 80 percent by weight of an aryl sulfone amide formaldehyde resin, and at least one sensitizer, the weight ratio of said film former to sensitizer being between 1:1 and 10:1. Usually the light sensitive mass is used as a light sensitive reversal-development layer on a carrier.

Abstract: Epoxide resins, which polymerize on exposure to actinic radiation, have, per average molecule, at least two photopolymerizable groups and also at least two 1,2-epoxide groups, one or more such epoxide groups being contained in units of formula ##STR1## Photopolymerizable epoxide resins are commonly prepared by introduction of photopolymerizable groups into a molecule of an epoxide resin by reaction with some of the epoxide groups: the modified resin, having a low epoxide group content, usually exhibits poorer adhesion and lower glass transition temperature than would otherwise be the case. In the new resins, secondary hydroxyl groups generated on introduction of the photopolymerizable groups have been converted into glycidyl ether groups, thus they have a higher epoxide content.

Abstract: A channeled photosensitive element is described. In particular, the element has a substantially solid photosensitive, thermoplastic layer having grooves or channels therein, the layer being applied with pressure to a surface, e.g., having raised areas such as in a printed circuit board without entrapping air bubbles.

Abstract: A method for forming self-aligned via holes which are used to interconnect levels of thin films atop substrates. A first level thin film pattern, typically comprising raised metallic stripes, is formed atop the substrate. A first level dielectric material is then deposited in blanket fashion so that the topology of the insulator conforms to the topology of the pattern. Next, a material such as polymer is deposited which tends to form a planar surface, with a greater thickness of polymer accumulating between the protuberances of the insulator than atop said protuberances. A mask is then applied, exposed and developed at selected regions where via holes are to be formed in the dielectric. A small amount of the polymer is etched, preferably in a plasma, to expose the insulator. Then the latter is etched to form the via holes. Accurately located via holes are formed, even if the mask is misaligned.

Abstract: A gang bonding interconnect tape for use in an automatic bonding machine for gang bonding of semiconductive devices is fabricated by depositing a series of electrically insulative support structures, such as rings of epoxy resin, onto a metallic tape, as of copper, there being at least one of said electrically insulative support structures for individual ones of the interconnect lead patterns to be formed in said metallic tape. The side of the metallic tape, opposite to the support structure, is photoetched with a series of interconnect lead patterns with individual ones of said lead patterns being etched in registration with individual ones of said electrically insulative support structures. The individual electrically insulative support structure, preferably in the form of a ring, is located in each of the lead patterns intermediate the central region thereof and the outer region thereof for supporting the individual leads thereof in circumferentially spaced relation.

Abstract: A positive-working electron resist which comprises a film-forming co-polymer B-D which is cross-linkable by carboxylic acid anhydride groups. The co-polymer B-D is formed from an unsaturated organic compound B and an unsaturated carboxylic acid chloride D. The cross-links are formed by heating a film of the resist in a moist atmosphere, some of the carboxylic acid chloride groups being hydrolysed so as to form carboxylic acid groups, at least some of these carboxylic acid groups reacting with carboxylic acid groups of different molecules of the co-polymer B-D so as to form carboxylic acid anhydride bridge links between these different molecules. The cross-linked material is insoluble in solvents in which the monomers B and D and the co-polymer B-D are normally soluble.

Abstract: A class of chlorinated or brominated polymeric negative resists for high resolution X-ray or electron lithographic processes is described. Chlorine and bromine atoms have a generally high mass absorption coefficient for X-rays and can be incorporated into the polymer in high weight percents. The chlorinated resists are especially sensitive to the 4.37 Angstrom characteristic X-rays from a Pd target.

Abstract: A method for producing a heat resistant, light resistant, chemically resistant and abrasion resistant noble metal image comprising forming a silver image on a photographic material which comprises a substrate having thereon at least one silver halide emulsion layer, either directly or on at least one subbing layer on the substrate, by exposing and developing the photographic material, converting the silver image into a noble metal image by contacting the silver image with a compound containing a noble metal having an ionization tendency smaller than the ionization tendency of silver, and then heating the photographic material in an oxygen-containing gas to thermally decompose and substantially remove the organic components on the substrate.

Abstract: A recording material comprising a support, a layer of a light-sensitive composition on the support, and a transparent film on the layer of the light-sensitive composition wherein the light-sensitive composition comprises (a) a monomer containing at least two addition polymerizable unsaturated bonds and having a boiling point of at least 100.degree. C, (b) polyvinyl butyral, and (c) a photopolymerization initiator represented by the formula: ##STR1## wherein R.sub.1 is an alkyl group which may be substituted or a vinyl-methyl group, R.sub.2 is an alkyl group, aryl group, or thienyl group, and Z is a group of non-metallic atoms required for forming a heterocyclic ring.After the recording material is imagewise exposed to light, the transparent film is peeled off while heating at about 70.degree. to 150.degree. C, whereby a positive or negative image is formed on each of the support and transparent film.

Abstract: A method and apparatus for producing micro-wiring arrangements on a flexible, insulating carrier band for the purpose of contacting semiconductors characterized by providing a carrier band having at least one opening therein for subsequently receiving an assembly, a thin metal band bonded onto one side of the carrier band with a first layer of photosensitive varnish covering the metal layer and a second layer of photosensitive varnish covering the opposite side of the carrier band and any metal exposed through the openings therein, and after exposing the first layer with the desired pattern, treating the layer to uncover portions of the metal layer by floating the band across a surface of a treating bath such as a developing bath to contact the first layer without contacting the second layer with the developing material and creating a flow in the bath directed generally toward the first layer to contact the first layer and to thereby cause developing of the first layer to uncover portions of the metal layer.

Abstract: Copolymers of certain keto-olefins and SO.sub.2 are sensitive to light and form films useful as photoresists in the manufacture of printed circuits, integrated circuits, printing plates and the like.

Abstract: A method for producing beam leads, i.e. electrical contacts, on flexible circuits or multilayer circuits for interconnecting devices is disclosed. The method consists of processing a metal foil to expose a beam lead interconnection pattern, plating the exposed pattern with metal, coating a base insulating layer with an adhesive, punching cavities in the adhesive coated insulating layer, engaging the coated side of the base insulating layer to the metal foil, and applying a cushioning material on the opposite side of the adhesive coated insulating layer. The metal foil and the insulating layer are then laminated causing the cushioning material to flow into the pre-punched cavities thereby providing a protective cushioning-type backing for the metal-plated beam lead interconnection pattern.

Abstract: A multilayer image-forming material which comprises an organic sulfur compound and a metal capable of interreacting upon irradiation with electromagnetic radiation to form an interreaction product or products (hereinafter product and products will simply termed "product"). When the image-forming material is imagewise irradiated with electromagnetic radiation, an interreaction product of the organic sulfur compound and the metal is formed in the irradiated portions of the material, and the physical, chemical and pysico-chemical properties of the thus formed interreaction product are different from those of the respective organic sulfur compound and metal in the non-irradiated portions. Utilizing this difference in properties, the present image-forming material is useful for various applications.

Abstract: A method for coating the photoresist by coating rollers onto a belt-like material comprising a perforated film carrier and a metallic foil laminated thereon. This belt-like material, which has so-called device holes or apertures punched off with a predetermined pitch and is particularly to be used for producing lead frames for IC devices, is wound around a back-up roller with its metallic foil facing outward to give a slight tension to the metallic foil. Thus, a uniform and continuous coating of the photoresist onto the foil may be obtained without any dents formed even at those device holes or apertures.

Abstract: Syndiotactic poly(methyl methacrylate) obtained by radical polymerization mixed with isotactic poly(methyl methacrylate) obtained by anionic polymerization so that the ratio by weight of the syndiotactic component to the isotactic component is from 2:8 to 8:2 and the mixture is dissolved homogeneously in a non-polar solvent such as benzene or toluene. The resist composition thus obtained is applied onto a substrate to form a photosensitive element which is then exposed to electron rays to cause depolymerization of the polymer in the exposed areas and developed with an organic solvent to form an image which is excellent in contrast and resolving power and devoid of pinholes.

Abstract: A photoreactive composition containing an effective amount of a polymer which includes as a recurring structure: ##STR1## wherein Ar is a bivalent aromatic radical, and M is selected from the class consisting of hydrogen, alkali metal, ammonium, and substituted ammonium. These compositions are useful in a wide variety of photochemical and photomechanical processes and are particularly suited for use as photopolymers, photoinitiators and photosensitizers in light sensitive coatings of presensitized lithographic plates.

Abstract: A method using a chemically vapor deposited (CVD) insulator to form a substantially planar layer of insulative material atop a conductive pattern on the surface of a substrate. The invention also features the use of a photoresist both as a mask for forming apertures in an underlying insulating layer as well as a lift-off material for a subsequently deposited conductive layer.In the method, a first insulating layer is deposited atop the substrate. Photoresist is then deposited; the resist pattern is exposed and developed; and the insulator is etched to expose selected areas of the substrate. A conductive film, preferably metal, is then deposited in blanket fashion in such quantity as to achieve the same height as the first insulator within the exposed apertures. The resist is lifted off, thereby leaving metal in the exposed apertures only. The pattern at this point consists of a single level of a conductive pattern and the insulator pattern with gaps between the conductors and the insulator.

Abstract: This invention pertains to a method of transferring a surface relief pattern from a poly(olefin sulfone) layer to a metal layer wherein the poly(olefin sulfone) layer is exposed to ultra violet radiation prior to sputter etching the surface relief pattern into the metal layer.

Abstract: A method for the production of films having the desired geometrical form (configuration) comprising depositing an electromagnetic radiation-sensitive system, which consists of a metal layer and an inorganic compound layer capable of reacting with said metal layer and forming interaction products under the effect of electromagnetic radiation, onto a film made from a material which does not react, on being irradiated, with the layer of said system that adjoins said film; subjecting said system to selective irradiation in conformity to the desired configuration, followed by carrying out the selective etching of the irradiated system so as to obtain the requisite configuration, and thereafter using said etched system as a mask for etching selectively said film in order to impart thereto the sought-for geometrical form.

Abstract: An electron sensitive resin comprising a random polymer of ethylene glycol methacrylate with triethylene glycol dimethacrylate, randomly crosslinked, and having a degree of polymerization of from 10 to 1000, is described.

Abstract: A method of etching a desired pattern in a layer of material including a major constituent of tin oxide is provided. A film of material which is resistant to the etching action of hot concentrated hydroiodic acid is formed on the layer and patterned. Portions of the layer uncovered by the patterned film are etched with hot concentrated hydroiodic acid.

Abstract: A method is disclosed for making precisely patterned platinum films in the manufacture of integrated circuit devices. The method calls for the deposition of a film of a platinum compound, whose heat of formation is in the range of from -100 to +10 Kcal/mole, patterning the film, and thermally reducing the patterned film to platinum metal.

Abstract: It has been found that certain polymers containing pendant diazo ester groups are photosensitive and have utility in the preparation of both lithographic and relief printing plates, as well as for etching resists for printed circuits. This is a continuation of application Ser. No. 412,218, filed Nov. 2, 1973 now abandoned.

Abstract: Carboxylic acids are included in resists to increase their speed and adhesion.

Abstract: A photo-voltaic hetero-junction is formed by chemical conversion of surface regions of a sheet of one conductivity type into material of a second conductivity type, the areas which are not to be converted being covered by a developed photo-resist layer which has previously been exposed to light through a mask. Electrical contacts are deposited on the regions of the second type and contacts to the material of the first type are formed by a layer deposited on a substrate under the sheet of material of the first type. This deposited layer of electrically-conductive material can also form the mask for initial exposure of the photo-resist layer.

Abstract: It has been observed that the deposition and patterning of metallic layers on a supported X-ray-transparent film to form a mask for X-ray lithography introduce stresses in the mask structure. In turn these stresses cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. Various techniques, including new metallization systems, are proposed for minimizing the establishment of stresses in such structures.

Abstract: An exposure method for exposing to a pattern a photosensitive material formed over a substrate having a reflective surface uses a light source having beam components of different wavelengths. The beam from the light source is used to project an exposure pattern upon the photosensitive material through a predetermined mask pattern to thereby form a combined standing wave pattern with the aid of the light beam incident on the photosensitive material and the light beam reflected by the reflective surface. The photosensitive material is disposed in the reduced peak value region of the combined standing wave pattern as the result of the interposition of a transparent layer between the reflecting surface and the photosensitive layer. Thus, the photosensitive material is pattern-exposed to a substantially uniform sensitizing energy.

Abstract: The invention is directed to alkali-resistant, radiation curable compositions comprisingA. a polyeneAndB. a polythiol of the formula ##STR1## WHERE R is an aliphatic hydrocarbon moiety containing 2-6 carbon atoms, R.sub.2 is an alkylene group containing 2-6 carbon atoms, R.sub.1 is hydrogen or --OH, n is 2-6, and m is 1-2.A photosensitizer is added to the composition when curing is by U. V. radiation. The cured composition is operable as an additive plating resist in the manufacture of electronic circuitry.

Abstract: A flame retardant thermosetting resin composition having improved properties as an electrical insulating material and being particularly suited for use in printed circuit boards composed essentially of acryloyloxy- or methacryloyloxy-terminated butadiene homopolymer or butadiene copolymer with, for example, acrylonitrile or styrene, ethylenically unsaturated monomer capable of copolymerizing with the terminating acryloyloxy- or methacryloyloxy- groups of the butadiene homopolymer or copolymer, which monomer has a substantial amount of haloaryl, and acid anhydride having at least one ethylenically unsaturated group. In preferred compositions of the invention, there are from 1.5 to 3.

Abstract: There is disclosed a method for producing in thick (0.005 inches) polyimide films or sheets, openings, or windows across each of which an electrical conductor, such as copper or aluminum extends. The windows may be of substantial dimensions typically 0.05 inches by 0.1 inches. The conductor is of substantial thickness of about 0.0008 to 0.001 inches. The method is practiced with a sheet in which holes have been preformed. The sheet is coated with the conductor on both surfaces by being rotated in a stream of vapor of the conductor produced by impinging an electron beam (typically at 10 KV and 300 milliamperes) on a block of the conducting material. As the sheet is rotated in the stream of vapor, the walls of the holes as well as the surface of the sheet are coated with a conductor. Photoresist is then deposited on both coated surfaces of the sheet and in the holes and is exposed under masks and developed so as to expose the conducting coating on each surface in the areas of the windows.

Abstract: A photosensitive composition comprising (1) a maleic anhydride adduct of 1,2-polybutadiene having a molecular weight of 10,000 or higher, (2) at least one photosensitizer and/or at least one photosensitive crosslinking agent, and, if necessary, (3) at least one acrylic monomer. This composition can be developed with water or a polar solvent such as an alcohol, and its layer formed on a support provides a printing plate. When the acrylic monomer is contained, the composition is suitable for use in flexographic printing.

Abstract: High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutual exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5.times.10.sup.-.sup.6 coulombs/cm.sup.2.

Abstract: A method of constructing a relatively thick, self-supporting mask suitable for electron beam projection processes. Thickness is achieved by multiple steps of coating with resist, exposure and development. Either positive or negative resist may be used for second and subsequent coatings. Second and subsequent exposures are directed through the first relatively thin mask formed and through the substrate to eliminate critical alignment of subsequent masks. When desired thickness is achieved an even thicker frame may be fabricated for support purposes and the mask may then be lifted off the substrate on which it had rested during the fabrication steps.When positive resist is employed, the resist remaining after development is baked on to give added structural strength to the mask. This baked resist can be coated with an additional layer of metal by evaporation or sputtering to give greater mechanical strength.