Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.

Abstract: A method of forming a semiconductor device is provided, in which the dopant for the source and drain regions is introduced from a doped dielectric layer. In one example, a gate structure is formed on a semiconductor layer of an SOI substrate, in which the thickness of the semiconductor layer is less than 10 nm. A doped dielectric layer is formed over at least the portion of the semiconductor layer that is adjacent to the gate structure. The dopant from the doped dielectric layer is driven into the portion of the semiconductor layer that is adjacent to the gate structure. The dopant diffused into the semiconductor provides source and drain extension regions.

Abstract: The particle sizes of agglomerates of carbon nanospheres are reduced by dispersing the carbon nanospheres in an organic solvent. The carbon nanospheres are multi-walled, hollow, graphitic structures with an average diameter in a range from about 10 nm to about 200 nm, more preferably about 20 nm to about 100 nm. Spectral data shows that prior to being dispersed, the carbon nanospheres are agglomerated into clusters that range in size from 500 nm to 5 microns. The clusters of nanospheres are reduced in size by dispersing the carbon nanospheres in an organic solvent containing at least one heteroatom (e.g., NMP) using ultrasonication. The combination of organic solvent and ultrasonication breaks up and disperses agglomerates of carbon nanospheres.

Abstract: The present invention relates to catalysts comprising at least one support and at least one layer applied to said support, said layer containing a) 20 to 95% by weight of at least one aluminum, silicon, titanium or magnesium oxide compound or a silicon carbide or a carbon support or mixtures thereof, and b) 5 to 50% by weight of at least one nanocarbon. The catalysts can be used to produce unsaturated hydrocarbons by means of the oxidative dehydrogenation of alkylaromatics, alkenes and alkanes in the gas phase.

Abstract: A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.

Abstract: A method of manufacturing a acute tip, multi-wall carbon nanotube radial aggregate, comprising the steps of leading a graphite rod into plasma flame generated in a hydrogen-added inert gas atmosphere to evaporate carbon from the graphite rod and stacking, on the surface of the graphite rod, the acute tip, multi-wall carbon nanotube radial aggregation of novel carbon nano-structure useful as field emission electron sources such as probes for STM and APM, display elements, and displays.

Abstract: A graphitized fine carbon fiber comprising a hollow space extending along its center axis, and a plurality of graphene sheets, wherein the fiber has an end surface comprising a portion of discontinuity in which ends of graphene sheets are not bonded to one another and at least one portion of continuity comprised of at least one group of graphene sheets in which one graphene sheet is bonded to another graphene sheet adjacent thereto.