Abstract: A solution is provided comprising boron nitride nanotubes (BNNTs) in a liquid solvent. An optical waveguide, such as an optical fiber, is contacted with the solution so as to form a layer of the solution supported on at least a portion of the optical waveguide. The liquid solvent is then removed from the layer of the solution supported on the optical waveguide in order to form a coating of the BNNTs on the optical waveguide. Further provided is a BNNT coated optical waveguide for use as a sensor.

Abstract: An optoelectronic device including light-emitting components, each light-emitting component being adapted to emit a first radiation at a first wavelength, and photoluminescent blocks, each photoluminescent block facing at least one light-emitting component and comprising a single quantum well or multiple quantum wells, photoluminescent blocks being divided into first photoluminescent blocks adapted to convert by optical pumping the first radiation into a second radiation at a second wavelength, second photoluminescent blocks adapted to convert by optical pumping the first radiation into a third radiation at a third wavelength and third photoluminescent blocks adapted to convert by optical pumping the first radiation into a fourth radiation at a fourth wavelength.

Abstract: Disclosed is a calcined carbon material for a magnesium battery anode. The calcined carbon material includes catalytic carbon nanotemplates having a network structure in which nanofibers are entangled three-dimensionally. The calcined carbon material can be used as a magnesium battery anode material. Also disclosed is a method for preparing the calcined carbon material.

Abstract: Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.

Abstract: Apparatus for hydrogen chloride electrolysis, comprising a cathode that has a layer of nitrogen-doped carbon nanotubes having functional groups containing nitrogen.

Abstract: Process for the reduction of oxygen in aqueous chlorine- and/or chloride-containing solutions in the presence of a catalyst comprising nitrogen-doped carbon nanotubes.

Abstract: A rechargeable lithium cell comprising: (a) an anode comprising an anode active material; (b) a cathode comprising a hybrid cathode active material composed of an electrically conductive substrate and a phthalocyanine compound chemically bonded to or immobilized by the conductive substrate, wherein the phthalocyanine compound is in an amount of from 1% to 99% by weight based on the total weight of the conductive substrate and the phthalocyanine compound combined; and (c) electrolyte or a combination of electrolyte and a porous separator, wherein the separator is disposed between the anode and the cathode and the electrolyte is in ionic contact with the anode and the cathode. This secondary cell exhibits a long cycle life, the best cathode specific capacity, and best cell-level specific energy of all rechargeable lithium-ion cells ever reported.

Abstract: A rechargeable lithium cell comprising: (a) an anode comprising a prelithiated lithium storage material or a combination of a lithium storage material and a lithium ion source; (b) a hybrid cathode active material composed of a meso-porous structure of a carbon, graphite, metal, or conductive polymer and a phthalocyanine compound, wherein the meso-porous structure is in an amount of from 1% to 99% by weight based on the total weight of the meso-porous structure and the phthalocyanine combined, and wherein the meso-porous structure has a pore with a size from 2 nm to 50 nm to accommodate phthalocyanine compound therein; and (c) an electrolyte or electrolyte/separator assembly. This secondary cell exhibits a long cycle life and the best cathode specific capacity and best cell-level specific energy of all rechargeable lithium-ion cells ever reported.

Abstract: A semiconductor device and a method of fabricating a semiconductor device, wherein the method includes forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is adapted to be used in customized applications as a customized semiconductor device.

Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided.

Abstract: A magnesium-ion cell comprising (a) a cathode comprising a carbon or graphitic material as a cathode active material having a surface area to capture and store magnesium thereon, wherein the cathode forms a meso-porous structure having a pore size from 2 nm to 50 nm and a specific surface area greater than 50 m2/g; (b) an anode comprising an anode current collector alone or a combination of an anode current collector and an anode active material; (c) a porous separator disposed between the anode and the cathode; (d) electrolyte in ionic contact with the anode and the cathode; and (e) a magnesium ion source disposed in the anode to obtain an open circuit voltage (OCV) from 0.5 volts to 3.5 volts when the cell is made.

Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.

Abstract: Concrete reinforced with nanostructures and reinforcing concrete methods are provided having cement and dispersion including water, a surfactant, carbon nanotubes having on the external surfaces thereof carbon atoms substituted by atoms of another element or other elements, and carbon nanotubes possessing chemical groups on the surface thereof.

Abstract: Embodiments of tunneling barriers and methods for same can embed modules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application.

Abstract: Provided are a dye-sensitized solar cell and a method for manufacturing the dye-sensitized solar cell using a carbon nanotube (CNx) doped with nitrogen, wherein the dye-sensitized solar cell using the carbon nanotube (CNx) doped with nitrogen has an improved conductivity and open circuit voltage as compared to those using the carbon nanotube (CNT) and also a high connectivity between a transparent electrode and an oxide semiconductor

Abstract: Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.

Abstract: A method of forming a semiconductor device is provided, in which the dopant for the source and drain regions is introduced from a doped dielectric layer. In one example, a gate structure is formed on a semiconductor layer of an SOI substrate, in which the thickness of the semiconductor layer is less than 10 nm. A doped dielectric layer is formed over at least the portion of the semiconductor layer that is adjacent to the gate structure. The dopant from the doped dielectric layer is driven into the portion of the semiconductor layer that is adjacent to the gate structure. The dopant diffused into the semiconductor provides source and drain extension regions.

Abstract: A gas filter comprises a housing (30) having a gas inlet (55), a gas outlet (65) and at least one chamber (70) therebetween containing carbon nanotubes (110). The chamber (70) has a port (90) and is configured for simultaneous gas ingress to and gas egress from the carbon nanotubes (110) through the port (90).

Abstract: A method of fabricating a non-brittle, carbon nanopaper from single wall, multiwall, and combination thereof, from carbon nanotubes, using a vacuum deposition, high temperature annealing, and polystyrene polymer rinse process; which nanopaper can be nitrided by either a plasma-enhanced chemical vapor deposition (PECVD) process, or an by an electrochemical method, to obtain a useful chemically functionalized substrate, a substrate containing metastable N4, N8, and longer chain polymeric nitrogen clusters. Such nitrided carbon nanopaper can be used to enhance the ballistic performance of gun propellants, while reducing gun barrel wear and erosion thereof.

Abstract: Hybrid radical energy storage devices, such as batteries or electrochemical devices, and methods of use and making are disclosed. Also described herein are electrodes and electrolytes useful in energy storage devices, for example, radical polymer cathode materials and electrolytes for use in organic radical batteries.

Abstract: A carbon nanohorn (CNH) is oxidized to make an opening in the side of the CNH. A substance to be included, e.g., a metal, is introduced through the opening. The inclusion substance is moved to a tip part of the carbon nanohorn through heat treatment in vacuum or an inert gas. The CNH is further heat treated in an atmosphere containing oxygen in a low concentration to remove the carbon layer in the tip through catalysis of the inclusion substance. This exposes the inclusion substance. If the inclusion substance is a metal which is not moved to a tip part by the heat treatment in vacuum or an inert gas, the carbon part surrounding the fine catalyst particle is specifically burned by a heat treatment in an low oxygen concentration atmosphere, while utilizing the catalysis. Thus, the fine catalyst particle is fixed to the tip part of the CNH.

Abstract: A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a substrate; forming nitride spacers on side walls of the parallel oxide bars, with gaps remaining between adjacent nitride spacers; forming silicon pillars in the gaps; removing the nitride spacers to form a plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film.

Abstract: Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have long-lasting doping stability in the air without de-doping. Further, CNT n-doping state may be easily controlled when using the CNT n-doping material. The CNT n-doping material and/or CNTs n-doped with the CNT n-doping material may be used for various applications.

Abstract: A fuel cell of the present invention comprises a cathode and an anode, one or both of the anode and the cathode including a catalyst comprising a bundle of longitudinally aligned graphitic carbon nanotubes including a catalytically active transition metal incorporated longitudinally and atomically distributed throughout the graphitic carbon walls of said nanotubes. The nanotubes also include nitrogen atoms and/or ions chemically bonded to the graphitic carbon and to the transition metal. Preferably, the transition metal comprises at least one metal selected from the group consisting of Fe, Co, Ni, Mn, and Cr.

Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes.

Abstract: A catalyst particle on a substrate is exposed to reactants containing a semiconductor material in a reactor. An intrinsic semiconductor nanowire having constant lateral dimensions is grown at a low enough temperature so that pyrolysis of the reactant is suppressed on the sidewalls of the intrinsic semiconductor nanowire. Once the intrinsic semiconductor nanowire grows to a desired length, the temperature of the reactor is raised to enable pyrolysis on the sidewalls of the semiconductor nanowire, and thereafter dopants are supplied into the reactor with the reactant. A composite semiconductor nanowire having an intrinsic inner semiconductor nanowire and a doped semiconductor shell is formed. The catalyst particle is removed, followed by an anneal that distributes the dopants uniformly within the volume of the composite semiconductor nanowire, forming a semiconductor nanowire having constant lateral dimensions and a substantially uniform doping.

Abstract: A lateral p-i-n photodetector is provided that includes an array of vertical semiconductor nanowires of a first conductivity type that are grown over a semiconductor substrate also of the first conductivity type. Each vertically grown semiconductor nanowires of the first conductivity type is surrounded by a thick epitaxial intrinsic semiconductor film. The gap between the now formed vertically grown semiconductor nanowires-intrinsic semiconductor film columns (comprised of the semiconductor nanowire core surrounded by intrinsic semiconductor film) is then filled by forming an epitaxial semiconductor material of a second conductivity type which is different from the first conductivity type. In a preferred embodiment, the vertically grown semiconductor nanowires of the first conductivity type are n+ silicon nanowires, the intrinsic epitaxial semiconductor layer is comprised of intrinsic epitaxial silicon, and the epitaxial semiconductor material of the second conductivity type is comprised of p+ silicon.

Abstract: Methods and devices are provided relating to the homogeneous deposition of a composite film of carbon nanotubes by electrophoresis. The methods comprise linking carbon nanotubes to matrix particles prior to electrophoretic deposition. The methods improve the adhesion of the composite film to the substrate and reduce the surface roughness. Carbon nanotube films and electron field emission cathodes fabricated by this process demonstrate enhanced electron field emission characteristics.

Abstract: The invention provides adducts comprising a carbon nanotube with covalently attached silane moieties, and methods of making such adducts. Examples of silane moieties include trimethoxysilane; hexaphenyldisilane; silylphosphine; 1,1,1,3,5,5,5-heptamethyltrisiloxane; polydimethylsiloxane, poly(N-bromobenzene-1,3-disulfonamide); N,N,N?,N?-tetrabromobenzene-1,3-disulfonamide; hexamethyldisilazane (HMDS); chlorotrimethylsilane (TMCS); trichloromethylsilane (TCMS); an alkyl(alkylamino)silane; a tri(alkoxy)silane; tert-butyldimethylsilane; monochloroaminosilane; dichloroaminosilane; trichloroaminosilane; and dimethylaminosilane.

Abstract: A method of making an electron-emitting device has the steps of disposing a film containing metal on a substrate, arranging a plurality of catalytic particles on the film containing metal, and heat-treating the substrate on which the plurality of catalytic particles are arranged under circumstance including hydrocarbon gas and hydrogen to form a plurality of carbon fibers. Catalytic particles contain Pd and at least one element selected from the group consisting of Fe, Co, Ni, Y, Rh, Pt, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er and Lu, and 20˜80 atm % (atomic percentage) or more of the at least one element is contained in the catalytic particles relative to Pd.

Abstract: The present invention generally relates to methods and apparatus for the synthesis or preparation of boron-doped single-walled carbon nanotubes (B-SWCNTs). The invention provides a high yield, single step method for producing large quantities of continuous macroscopic carbon fiber from single-wall carbon nanotubes using inexpensive carbon feedstocks wherein the carbon nanotubes are produced by in situ boron substitutional doping. In one embodiment, the nanotubes disclosed are used, singularly or in multiples, in power transmission cables, in solar cells, in batteries, as antennas, as molecular electronics, as probes and manipulators, and in composites. It is another object of this invention to provide macroscopic carbon fiber made by such a method.

Abstract: A catalyst for an electro-chemical oxygen reduction reaction (ORR) of a bundle of longitudinally aligned carbon nanotubes having a catalytically active transition metal incorporated longitudinally in said nanotubes. A method of making an electro-chemical catalyst for an oxygen reduction reaction (ORR) having a bundle of longitudinally aligned carbon nanotubes with a catalytically active transition metal incorporated throughout the nanotubes, where a substrate is in a first reaction zone, and a combination selected from one or more of a hydrocarbon and an organometallic compound containing an catalytically active transition metal and a nitrogen containing compound and an inert gas and a reducing gas is introduced into the first reaction zone which is maintained at a first reaction temperature for a time sufficient to vaporize material therein.

Abstract: A method of forming nitrogen-doped or other Group V-doped single-walled nanotubes including: forming a catalyst metal layer on a substrate; loading a substrate having the catalyst metal layer into a reaction chamber; forming an H2O or other plasma atmosphere in a reaction chamber; and forming the nitrogen-doped or other Group V-doped carbon nanotubes on the catalyst metal layer by supplying a carbon or other Group IV precursor and a nitrogen or other Group V precursor into a reaction chamber where a chemical reaction therebetween is generated in the H2O or other plasma atmosphere.

Abstract: The electron device of the present invention has a carbon-based linear structural body including at least one conductive particle, a first electrode and a second electrode disposed at both end of the carbon-based linear structural body, so as to subject the carbon-based linear structural body including at least one conductive particle to connect between the first electrode and the second electrode. A process of manufacturing the electron device includes steps of: forming a carbon-based linear structural body including at least one conductive particle, using a catalyst of a first island and a second island selected from two or more of islands of the catalyst on a substrate; and forming a first electrode and a second electrode so as to connect the first electrode with the first island and one end of the carbon-based linear structural body, and the second electrode with the second island and the other end of the carbon-based linear structural body.

Abstract: In an apparatus for surface-treating a carbon fiber, wherein the carbon fiber is heated by resistive heating, a carbon-containing gas is disposed on the carbon fiber, and carbon nanotubes are grown on a surface of the carbon fiber.

Abstract: Methods for forming compositions including carbide-containing nanorods and/or oxycarbide-containing nanorods and/or carbon nanotubes bearing carbides and oxycarbides. Rigid porous structures including oxycarbide-containing nanorods and/or carbide containing nanorods and/or carbon nanotubes bearing modified carbides and oxycarbides and methods of making the same are also provided. The compositions and rigid porous structures of the invention can be used either as catalyst and/or catalyst supports in fluid phase catalytic chemical reactions. Processes for making supported catalyst for selected fluid phase catalytic reactions are also provided.

Abstract: Disclosed herein is a method of doping nanosized nickel (Ni) on the surface of carbon nanotubes to improve the hydrogen storage capacity of the carbon nanotubes. The method comprises: sonicating carbon nanotube samples produced by vapor deposition, in sulfuric acid solution, followed by filtration to remove a metal catalyst from the carbon nanotube samples; and doping the carbon nanotube samples in liquid phase solution, followed by drying and reduction, so as to dope nanosized nickel on the surface of the carbon nanotubes.

Abstract: Porous and/or curved nanofiber bearing substrate materials are provided having enhanced surface area for a variety of applications including as electrical substrates, semipermeable membranes and barriers, structural lattices for tissue culturing and for composite materials, production of long unbranched nanofibers, and the like.

Abstract: To provide a carbon nanotube device capable of efficiently exerting various electrical or physical characteristics of a carbon nanotube, the present invention provides: a carbon nanotube device, in which a carbon nanotube structure layer having a network structure in which plural carbon nanotubes mutually cross-link, is formed in an arbitrary pattern on a surface of a base body; and a method of manufacturing the carbon nanotube device with which the carbon nanotube can be suitably manufactured.

Abstract: The present invention relates to polymer composite materials containing carbon nanotubes, particularly to those containing singled-walled nanotubes. The invention provides a polymer composite comprising one or more base polymers, one or more functionalized m-phenylenevinylene-2,5-disubstituted-p-phenylenevinylene polymers and carbon nanotubes. The invention also relates to functionalized m-phenylenevinylene-2,5-disubstituted-p-phenylenevinylene polymers, particularly to m-phenylenevinylene-2,5-disubstituted-p-phenylenevinylene polymers having side chain functionalization, and more particularly to m-phenylenevinylene-2,5-disubstituted-p-phenylenevinylene polymers having olefin side chains and alkyl epoxy side chains. The invention further relates to methods of making polymer composites comprising carbon nanotubes.

Abstract: A method to electronically modulate the energy gap and band-structure of semiconducting carbon nanotubes is proposed. Results show that the energy gap of a semiconducting nanotube can be narrowed when the nanotube is placed in an electric field perpendicular to the tube axis. Such effect in turn causes changes in electrical conductivity and radiation absorption characteristics that can be used in applications such as switches, transistors, photodetectors and polaron generation. By applying electric fields across the nanotube at a number of locations, a corresponding number of quantum wells are formed adjacent to one another. Such configuration is useful for Bragg reflectors, lasers and quantum computing.

Abstract: A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube FET device.

Abstract: A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.