Modified With Dissimilar Atoms Or Molecules Substituted For Carbon Atoms Of The Cnt (e.g., Impurity Doping Or Compositional Substitution, Etc.) Patents (Class 977/749)
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Patent number: 12140550Abstract: A photoluminescent material can be applied to part of a substrate as part of substrate inspection. The photoluminescent material includes a conjugated polymer having a coiled macroscopic molecular shape and a meta-linkage or an ortho-linkage. The substrate is imaged using an inspection system. The conjugated polymer can be, for example, poly(m-phenylene ethynylene) (PPE) or poly(para-phenylene vinylene) (PPV).Type: GrantFiled: January 25, 2023Date of Patent: November 12, 2024Assignee: KLA CorporationInventors: Jinsang Kim, Grace Chen
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Patent number: 11703636Abstract: A solution is provided comprising boron nitride nanotubes (BNNTs) in a liquid solvent. An optical waveguide, such as an optical fiber, is contacted with the solution so as to form a layer of the solution supported on at least a portion of the optical waveguide. The liquid solvent is then removed from the layer of the solution supported on the optical waveguide in order to form a coating of the BNNTs on the optical waveguide. Further provided is a BNNT coated optical waveguide for use as a sensor.Type: GrantFiled: April 30, 2020Date of Patent: July 18, 2023Inventors: Jingwen Guan, Huimin Ding, Ping Lu, Stephen Mihailov, Benoit Simard
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Patent number: 11662066Abstract: An optoelectronic device including light-emitting components, each light-emitting component being adapted to emit a first radiation at a first wavelength, and photoluminescent blocks, each photoluminescent block facing at least one light-emitting component and comprising a single quantum well or multiple quantum wells, photoluminescent blocks being divided into first photoluminescent blocks adapted to convert by optical pumping the first radiation into a second radiation at a second wavelength, second photoluminescent blocks adapted to convert by optical pumping the first radiation into a third radiation at a third wavelength and third photoluminescent blocks adapted to convert by optical pumping the first radiation into a fourth radiation at a fourth wavelength.Type: GrantFiled: December 28, 2017Date of Patent: May 30, 2023Assignee: AlediaInventors: Wei Sin Tan, Philippe Gilet
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Patent number: 11411219Abstract: Disclosed is a calcined carbon material for a magnesium battery anode. The calcined carbon material includes catalytic carbon nanotemplates having a network structure in which nanofibers are entangled three-dimensionally. The calcined carbon material can be used as a magnesium battery anode material. Also disclosed is a method for preparing the calcined carbon material.Type: GrantFiled: March 13, 2020Date of Patent: August 9, 2022Assignees: Korea Institute of Science and Technology, Korea University Research and Business FoundationInventors: Hee-Dae Lim, Si Hyoung Oh, Hun-Gi Jung, Minah Lee, Hyungseok Kim, Sang Ok Kim, Young Soo Yun
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Patent number: 8907384Abstract: Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.Type: GrantFiled: January 26, 2007Date of Patent: December 9, 2014Assignee: NanoSelect, Inc.Inventors: Salvatore J. Pace, Piu Francis Man, Ajeeta Pradip Patil, Kah Fatt Tan
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Patent number: 8778148Abstract: Apparatus for hydrogen chloride electrolysis, comprising a cathode that has a layer of nitrogen-doped carbon nanotubes having functional groups containing nitrogen.Type: GrantFiled: March 25, 2009Date of Patent: July 15, 2014Assignee: Bayer Intellectual Property GmbHInventors: Aurel Wolf, Leslaw Mleczko, Volker Michele, Jens Assmann, Jürgen Kintrup, Rainer Weber
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Patent number: 8741122Abstract: Process for the reduction of oxygen in aqueous chlorine- and/or chloride-containing solutions in the presence of a catalyst comprising nitrogen-doped carbon nanotubes.Type: GrantFiled: March 19, 2009Date of Patent: June 3, 2014Assignee: Bayer Intellectual Property GmbHInventors: Aurel Wolf, Volker Michele, Leslaw Mleczko, Jens Assmann
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Publication number: 20140072871Abstract: A rechargeable lithium cell comprising: (a) an anode comprising an anode active material; (b) a cathode comprising a hybrid cathode active material composed of an electrically conductive substrate and a phthalocyanine compound chemically bonded to or immobilized by the conductive substrate, wherein the phthalocyanine compound is in an amount of from 1% to 99% by weight based on the total weight of the conductive substrate and the phthalocyanine compound combined; and (c) electrolyte or a combination of electrolyte and a porous separator, wherein the separator is disposed between the anode and the cathode and the electrolyte is in ionic contact with the anode and the cathode. This secondary cell exhibits a long cycle life, the best cathode specific capacity, and best cell-level specific energy of all rechargeable lithium-ion cells ever reported.Type: ApplicationFiled: September 7, 2012Publication date: March 13, 2014Inventors: Guorong Chen, Zhenning Yu, Aruna Zhamu, Bor Z. Jang
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Publication number: 20130330611Abstract: A rechargeable lithium cell comprising: (a) an anode comprising a prelithiated lithium storage material or a combination of a lithium storage material and a lithium ion source; (b) a hybrid cathode active material composed of a meso-porous structure of a carbon, graphite, metal, or conductive polymer and a phthalocyanine compound, wherein the meso-porous structure is in an amount of from 1% to 99% by weight based on the total weight of the meso-porous structure and the phthalocyanine combined, and wherein the meso-porous structure has a pore with a size from 2 nm to 50 nm to accommodate phthalocyanine compound therein; and (c) an electrolyte or electrolyte/separator assembly. This secondary cell exhibits a long cycle life and the best cathode specific capacity and best cell-level specific energy of all rechargeable lithium-ion cells ever reported.Type: ApplicationFiled: June 11, 2012Publication date: December 12, 2013Inventors: Gourong Chen, Yanbo Wang, Aruna Zhamu, Bor Z. Jang
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Patent number: 8598641Abstract: A semiconductor device and a method of fabricating a semiconductor device, wherein the method includes forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is adapted to be used in customized applications as a customized semiconductor device.Type: GrantFiled: November 2, 2011Date of Patent: December 3, 2013Assignee: International Business Machines CorporationInventors: Howard H. Chen, Louis C. Hsu, Jack A. Mandelman, Chun-Yung Sung
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Patent number: 8586458Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided.Type: GrantFiled: March 6, 2008Date of Patent: November 19, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Seon-mi Yoon, Seong-jae Choi, Hyeon-jin Shin, Jae-young Choi, Sung-jin Kim, Young-hee Lee
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Publication number: 20130302697Abstract: A magnesium-ion cell comprising (a) a cathode comprising a carbon or graphitic material as a cathode active material having a surface area to capture and store magnesium thereon, wherein the cathode forms a meso-porous structure having a pore size from 2 nm to 50 nm and a specific surface area greater than 50 m2/g; (b) an anode comprising an anode current collector alone or a combination of an anode current collector and an anode active material; (c) a porous separator disposed between the anode and the cathode; (d) electrolyte in ionic contact with the anode and the cathode; and (e) a magnesium ion source disposed in the anode to obtain an open circuit voltage (OCV) from 0.5 volts to 3.5 volts when the cell is made.Type: ApplicationFiled: May 14, 2012Publication date: November 14, 2013Inventors: Yanbo Wang, Aruna Zhamu, Bor Z. Jang
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Patent number: 8557613Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.Type: GrantFiled: June 13, 2011Date of Patent: October 15, 2013Assignee: California Institute of TechnologyInventors: Michael Shearn, Michael David Henry, Axel Scherer
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Patent number: 8551243Abstract: Concrete reinforced with nanostructures and reinforcing concrete methods are provided having cement and dispersion including water, a surfactant, carbon nanotubes having on the external surfaces thereof carbon atoms substituted by atoms of another element or other elements, and carbon nanotubes possessing chemical groups on the surface thereof.Type: GrantFiled: December 13, 2010Date of Patent: October 8, 2013Assignee: Urbanizaciones Imoboliarias del Centro S.A. de C.V.Inventors: Jose Antonio Soto Montoya, Mauricio Martinez Alanis, Mauricio Terrones Maldonado, Humberto Terrones Maldonado, Daniel Ramirez Gonzalez
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Patent number: 8542540Abstract: Embodiments of tunneling barriers and methods for same can embed modules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application.Type: GrantFiled: March 26, 2010Date of Patent: September 24, 2013Assignee: Cornell UniversityInventors: Edwin C. Kan, Tuo-Hung Hou
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Publication number: 20130240032Abstract: Provided are a dye-sensitized solar cell and a method for manufacturing the dye-sensitized solar cell using a carbon nanotube (CNx) doped with nitrogen, wherein the dye-sensitized solar cell using the carbon nanotube (CNx) doped with nitrogen has an improved conductivity and open circuit voltage as compared to those using the carbon nanotube (CNT) and also a high connectivity between a transparent electrode and an oxide semiconductorType: ApplicationFiled: April 29, 2013Publication date: September 19, 2013Applicant: Korea Advanced Institute of Science and TechnologyInventor: Korea Advanced Institute of Science and Technology
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Patent number: 8530271Abstract: Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.Type: GrantFiled: January 21, 2011Date of Patent: September 10, 2013Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Ajay Virkar, Melburne C. Lemieux, Zhenan Bao
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Patent number: 8394710Abstract: A method of forming a semiconductor device is provided, in which the dopant for the source and drain regions is introduced from a doped dielectric layer. In one example, a gate structure is formed on a semiconductor layer of an SOI substrate, in which the thickness of the semiconductor layer is less than 10 nm. A doped dielectric layer is formed over at least the portion of the semiconductor layer that is adjacent to the gate structure. The dopant from the doped dielectric layer is driven into the portion of the semiconductor layer that is adjacent to the gate structure. The dopant diffused into the semiconductor provides source and drain extension regions.Type: GrantFiled: June 21, 2010Date of Patent: March 12, 2013Assignee: International Business Machines CorporationInventors: Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz, Ghavam G. Shahidi
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Publication number: 20130042762Abstract: A gas filter comprises a housing (30) having a gas inlet (55), a gas outlet (65) and at least one chamber (70) therebetween containing carbon nanotubes (110). The chamber (70) has a port (90) and is configured for simultaneous gas ingress to and gas egress from the carbon nanotubes (110) through the port (90).Type: ApplicationFiled: March 29, 2011Publication date: February 21, 2013Inventor: Dimitris Drikakis
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Patent number: 8317978Abstract: A method of fabricating a non-brittle, carbon nanopaper from single wall, multiwall, and combination thereof, from carbon nanotubes, using a vacuum deposition, high temperature annealing, and polystyrene polymer rinse process; which nanopaper can be nitrided by either a plasma-enhanced chemical vapor deposition (PECVD) process, or an by an electrochemical method, to obtain a useful chemically functionalized substrate, a substrate containing metastable N4, N8, and longer chain polymeric nitrogen clusters. Such nitrided carbon nanopaper can be used to enhance the ballistic performance of gun propellants, while reducing gun barrel wear and erosion thereof.Type: GrantFiled: April 6, 2011Date of Patent: November 27, 2012Inventors: Thelma G. Manning, Zafar Iqbal
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Publication number: 20120295166Abstract: Hybrid radical energy storage devices, such as batteries or electrochemical devices, and methods of use and making are disclosed. Also described herein are electrodes and electrolytes useful in energy storage devices, for example, radical polymer cathode materials and electrolytes for use in organic radical batteries.Type: ApplicationFiled: May 21, 2012Publication date: November 22, 2012Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Thomas GENNETT, David S. GINLEY, Wade BRAUNECKER, Chunmei BAN
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Patent number: 8093174Abstract: A carbon nanohorn (CNH) is oxidized to make an opening in the side of the CNH. A substance to be included, e.g., a metal, is introduced through the opening. The inclusion substance is moved to a tip part of the carbon nanohorn through heat treatment in vacuum or an inert gas. The CNH is further heat treated in an atmosphere containing oxygen in a low concentration to remove the carbon layer in the tip through catalysis of the inclusion substance. This exposes the inclusion substance. If the inclusion substance is a metal which is not moved to a tip part by the heat treatment in vacuum or an inert gas, the carbon part surrounding the fine catalyst particle is specifically burned by a heat treatment in an low oxygen concentration atmosphere, while utilizing the catalysis. Thus, the fine catalyst particle is fixed to the tip part of the CNH.Type: GrantFiled: January 16, 2008Date of Patent: January 10, 2012Assignee: NEC CorporationInventors: Ryota Yuge, Masako Yudasaka, Sumio Iijima
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Patent number: 8076190Abstract: A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a substrate; forming nitride spacers on side walls of the parallel oxide bars, with gaps remaining between adjacent nitride spacers; forming silicon pillars in the gaps; removing the nitride spacers to form a plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film.Type: GrantFiled: August 4, 2009Date of Patent: December 13, 2011Assignee: International Business Machines CorporationInventors: Howard H. Chen, Louis C. Hsu, Jack A. Mandelman, Chun-Yung Sung
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Publication number: 20110215416Abstract: Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have long-lasting doping stability in the air without de-doping. Further, CNT n-doping state may be easily controlled when using the CNT n-doping material. The CNT n-doping material and/or CNTs n-doped with the CNT n-doping material may be used for various applications.Type: ApplicationFiled: May 18, 2011Publication date: September 8, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jaeyoung CHOI, Hyeon Jin SHIN, Seonmi YOON, Boram KANG, Young Hee LEE, Un Jeong KIM
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Patent number: 7927748Abstract: A fuel cell of the present invention comprises a cathode and an anode, one or both of the anode and the cathode including a catalyst comprising a bundle of longitudinally aligned graphitic carbon nanotubes including a catalytically active transition metal incorporated longitudinally and atomically distributed throughout the graphitic carbon walls of said nanotubes. The nanotubes also include nitrogen atoms and/or ions chemically bonded to the graphitic carbon and to the transition metal. Preferably, the transition metal comprises at least one metal selected from the group consisting of Fe, Co, Ni, Mn, and Cr.Type: GrantFiled: May 25, 2010Date of Patent: April 19, 2011Assignee: Uchicago Argonne, LLCInventors: Di-Jia Liu, Junbing Yang, Xiaoping Wang
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Publication number: 20110086176Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes.Type: ApplicationFiled: October 7, 2010Publication date: April 14, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seon-mi YOON, Seong-jae CHOI, Hyeon-jin SHIN, Jae-young CHOI, Sung-jin KIM, Young-hee LEE
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Patent number: 7915146Abstract: A catalyst particle on a substrate is exposed to reactants containing a semiconductor material in a reactor. An intrinsic semiconductor nanowire having constant lateral dimensions is grown at a low enough temperature so that pyrolysis of the reactant is suppressed on the sidewalls of the intrinsic semiconductor nanowire. Once the intrinsic semiconductor nanowire grows to a desired length, the temperature of the reactor is raised to enable pyrolysis on the sidewalls of the semiconductor nanowire, and thereafter dopants are supplied into the reactor with the reactant. A composite semiconductor nanowire having an intrinsic inner semiconductor nanowire and a doped semiconductor shell is formed. The catalyst particle is removed, followed by an anneal that distributes the dopants uniformly within the volume of the composite semiconductor nanowire, forming a semiconductor nanowire having constant lateral dimensions and a substantially uniform doping.Type: GrantFiled: October 23, 2007Date of Patent: March 29, 2011Assignee: International Business Machines CorporationInventors: Richard A. Haight, Mark C. Reuter
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Patent number: 7902540Abstract: A lateral p-i-n photodetector is provided that includes an array of vertical semiconductor nanowires of a first conductivity type that are grown over a semiconductor substrate also of the first conductivity type. Each vertically grown semiconductor nanowires of the first conductivity type is surrounded by a thick epitaxial intrinsic semiconductor film. The gap between the now formed vertically grown semiconductor nanowires-intrinsic semiconductor film columns (comprised of the semiconductor nanowire core surrounded by intrinsic semiconductor film) is then filled by forming an epitaxial semiconductor material of a second conductivity type which is different from the first conductivity type. In a preferred embodiment, the vertically grown semiconductor nanowires of the first conductivity type are n+ silicon nanowires, the intrinsic epitaxial semiconductor layer is comprised of intrinsic epitaxial silicon, and the epitaxial semiconductor material of the second conductivity type is comprised of p+ silicon.Type: GrantFiled: May 21, 2008Date of Patent: March 8, 2011Assignee: International Business Machines CorporationInventor: Guy M. Cohen
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Patent number: 7850874Abstract: Methods and devices are provided relating to the homogeneous deposition of a composite film of carbon nanotubes by electrophoresis. The methods comprise linking carbon nanotubes to matrix particles prior to electrophoretic deposition. The methods improve the adhesion of the composite film to the substrate and reduce the surface roughness. Carbon nanotube films and electron field emission cathodes fabricated by this process demonstrate enhanced electron field emission characteristics.Type: GrantFiled: September 20, 2007Date of Patent: December 14, 2010Assignee: Xintek, Inc.Inventors: Mei Lu, Jie Liu, Huaizhi Geng, Bo Gao
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Patent number: 7833504Abstract: The invention provides adducts comprising a carbon nanotube with covalently attached silane moieties, and methods of making such adducts. Examples of silane moieties include trimethoxysilane; hexaphenyldisilane; silylphosphine; 1,1,1,3,5,5,5-heptamethyltrisiloxane; polydimethylsiloxane, poly(N-bromobenzene-1,3-disulfonamide); N,N,N?,N?-tetrabromobenzene-1,3-disulfonamide; hexamethyldisilazane (HMDS); chlorotrimethylsilane (TMCS); trichloromethylsilane (TCMS); an alkyl(alkylamino)silane; a tri(alkoxy)silane; tert-butyldimethylsilane; monochloroaminosilane; dichloroaminosilane; trichloroaminosilane; and dimethylaminosilane.Type: GrantFiled: August 27, 2008Date of Patent: November 16, 2010Assignee: The Research Foundation of State University of New YorkInventors: Stanislaus S. Wong, Tirandai Hemraj-Benny
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Patent number: 7819718Abstract: A method of making an electron-emitting device has the steps of disposing a film containing metal on a substrate, arranging a plurality of catalytic particles on the film containing metal, and heat-treating the substrate on which the plurality of catalytic particles are arranged under circumstance including hydrocarbon gas and hydrogen to form a plurality of carbon fibers. Catalytic particles contain Pd and at least one element selected from the group consisting of Fe, Co, Ni, Y, Rh, Pt, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er and Lu, and 20˜80 atm % (atomic percentage) or more of the at least one element is contained in the catalytic particles relative to Pd.Type: GrantFiled: December 13, 2005Date of Patent: October 26, 2010Assignee: Canon Kabushiki KaishaInventors: Shinichi Kawate, Takeo Tsukamoto
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Publication number: 20100219383Abstract: The present invention generally relates to methods and apparatus for the synthesis or preparation of boron-doped single-walled carbon nanotubes (B-SWCNTs). The invention provides a high yield, single step method for producing large quantities of continuous macroscopic carbon fiber from single-wall carbon nanotubes using inexpensive carbon feedstocks wherein the carbon nanotubes are produced by in situ boron substitutional doping. In one embodiment, the nanotubes disclosed are used, singularly or in multiples, in power transmission cables, in solar cells, in batteries, as antennas, as molecular electronics, as probes and manipulators, and in composites. It is another object of this invention to provide macroscopic carbon fiber made by such a method.Type: ApplicationFiled: March 7, 2008Publication date: September 2, 2010Inventor: Peter C. Eklund
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Patent number: 7767616Abstract: A catalyst for an electro-chemical oxygen reduction reaction (ORR) of a bundle of longitudinally aligned carbon nanotubes having a catalytically active transition metal incorporated longitudinally in said nanotubes. A method of making an electro-chemical catalyst for an oxygen reduction reaction (ORR) having a bundle of longitudinally aligned carbon nanotubes with a catalytically active transition metal incorporated throughout the nanotubes, where a substrate is in a first reaction zone, and a combination selected from one or more of a hydrocarbon and an organometallic compound containing an catalytically active transition metal and a nitrogen containing compound and an inert gas and a reducing gas is introduced into the first reaction zone which is maintained at a first reaction temperature for a time sufficient to vaporize material therein.Type: GrantFiled: March 3, 2006Date of Patent: August 3, 2010Assignee: UChicago Argonne, LLCInventors: Di-Jia Liu, Junbing Yang, Xiaoping Wang
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Patent number: 7713509Abstract: A method of forming nitrogen-doped or other Group V-doped single-walled nanotubes including: forming a catalyst metal layer on a substrate; loading a substrate having the catalyst metal layer into a reaction chamber; forming an H2O or other plasma atmosphere in a reaction chamber; and forming the nitrogen-doped or other Group V-doped carbon nanotubes on the catalyst metal layer by supplying a carbon or other Group IV precursor and a nitrogen or other Group V precursor into a reaction chamber where a chemical reaction therebetween is generated in the H2O or other plasma atmosphere.Type: GrantFiled: June 7, 2006Date of Patent: May 11, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Ju Bae, Yo-Sep Min, Wan-Jun Park
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Patent number: 7696512Abstract: The electron device of the present invention has a carbon-based linear structural body including at least one conductive particle, a first electrode and a second electrode disposed at both end of the carbon-based linear structural body, so as to subject the carbon-based linear structural body including at least one conductive particle to connect between the first electrode and the second electrode. A process of manufacturing the electron device includes steps of: forming a carbon-based linear structural body including at least one conductive particle, using a catalyst of a first island and a second island selected from two or more of islands of the catalyst on a substrate; and forming a first electrode and a second electrode so as to connect the first electrode with the first island and one end of the carbon-based linear structural body, and the second electrode with the second island and the other end of the carbon-based linear structural body.Type: GrantFiled: May 19, 2003Date of Patent: April 13, 2010Assignees: Fujitsu Limited, National Institute of Advanced Industrial Science and TechnologyInventors: Yuji Awano, Kazuhiko Matsumoto
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Publication number: 20100074834Abstract: In an apparatus for surface-treating a carbon fiber, wherein the carbon fiber is heated by resistive heating, a carbon-containing gas is disposed on the carbon fiber, and carbon nanotubes are grown on a surface of the carbon fiber.Type: ApplicationFiled: February 6, 2009Publication date: March 25, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventor: Ha-jin KIM
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Patent number: 7576027Abstract: Methods for forming compositions including carbide-containing nanorods and/or oxycarbide-containing nanorods and/or carbon nanotubes bearing carbides and oxycarbides. Rigid porous structures including oxycarbide-containing nanorods and/or carbide containing nanorods and/or carbon nanotubes bearing modified carbides and oxycarbides and methods of making the same are also provided. The compositions and rigid porous structures of the invention can be used either as catalyst and/or catalyst supports in fluid phase catalytic chemical reactions. Processes for making supported catalyst for selected fluid phase catalytic reactions are also provided.Type: GrantFiled: December 8, 2006Date of Patent: August 18, 2009Assignee: Hyperion Catalysis International, Inc.Inventors: Jun Ma, David Moy
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Publication number: 20090194736Abstract: Disclosed herein is a method of doping nanosized nickel (Ni) on the surface of carbon nanotubes to improve the hydrogen storage capacity of the carbon nanotubes. The method comprises: sonicating carbon nanotube samples produced by vapor deposition, in sulfuric acid solution, followed by filtration to remove a metal catalyst from the carbon nanotube samples; and doping the carbon nanotube samples in liquid phase solution, followed by drying and reduction, so as to dope nanosized nickel on the surface of the carbon nanotubes.Type: ApplicationFiled: April 4, 2006Publication date: August 6, 2009Inventors: Jai-Young Lee, Jeung-Ku Kang, Hyun-Seok Kim, Kyu-Sung Han, Min-Sang Song, Ho Lee, Jin-Ho Kim
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Patent number: 7553371Abstract: Porous and/or curved nanofiber bearing substrate materials are provided having enhanced surface area for a variety of applications including as electrical substrates, semipermeable membranes and barriers, structural lattices for tissue culturing and for composite materials, production of long unbranched nanofibers, and the like.Type: GrantFiled: January 11, 2006Date of Patent: June 30, 2009Assignee: Nanosys, Inc.Inventors: Robert Dubrow, Carlos Guillermo Casillas, William P. Freeman, Jay L. Goldman, Veeral Dilip Hardev, Francisco Leon, Chunming Niu, Cheri X. Y. Pereira
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Patent number: 7452828Abstract: To provide a carbon nanotube device capable of efficiently exerting various electrical or physical characteristics of a carbon nanotube, the present invention provides: a carbon nanotube device, in which a carbon nanotube structure layer having a network structure in which plural carbon nanotubes mutually cross-link, is formed in an arbitrary pattern on a surface of a base body; and a method of manufacturing the carbon nanotube device with which the carbon nanotube can be suitably manufactured.Type: GrantFiled: October 27, 2003Date of Patent: November 18, 2008Assignee: Fuji Xerox Co., Ltd.Inventors: Masaki Hirakata, Takashi Isozaki, Kentaro Kishi, Taishi Shigematsu, Chikara Manabe, Kazunori Anazawa, Hiroyuki Watanabe, Masaaki Shimizu
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Patent number: 7411019Abstract: The present invention relates to polymer composite materials containing carbon nanotubes, particularly to those containing singled-walled nanotubes. The invention provides a polymer composite comprising one or more base polymers, one or more functionalized m-phenylenevinylene-2,5-disubstituted-p-phenylenevinylene polymers and carbon nanotubes. The invention also relates to functionalized m-phenylenevinylene-2,5-disubstituted-p-phenylenevinylene polymers, particularly to m-phenylenevinylene-2,5-disubstituted-p-phenylenevinylene polymers having side chain functionalization, and more particularly to m-phenylenevinylene-2,5-disubstituted-p-phenylenevinylene polymers having olefin side chains and alkyl epoxy side chains. The invention further relates to methods of making polymer composites comprising carbon nanotubes.Type: GrantFiled: August 25, 2004Date of Patent: August 12, 2008Assignee: Eltron Research, Inc.Inventor: Richard A. Bley
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Patent number: 7385262Abstract: A method to electronically modulate the energy gap and band-structure of semiconducting carbon nanotubes is proposed. Results show that the energy gap of a semiconducting nanotube can be narrowed when the nanotube is placed in an electric field perpendicular to the tube axis. Such effect in turn causes changes in electrical conductivity and radiation absorption characteristics that can be used in applications such as switches, transistors, photodetectors and polaron generation. By applying electric fields across the nanotube at a number of locations, a corresponding number of quantum wells are formed adjacent to one another. Such configuration is useful for Bragg reflectors, lasers and quantum computing.Type: GrantFiled: November 27, 2001Date of Patent: June 10, 2008Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: James O'Keeffe, Kyeongjae Cho
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Patent number: 7253431Abstract: A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube FET device.Type: GrantFiled: February 11, 2005Date of Patent: August 7, 2007Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Phaedon Avouris, Jia Chen, Christian Klinke, Paul M. Solomon
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Patent number: 7180107Abstract: A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.Type: GrantFiled: May 25, 2004Date of Patent: February 20, 2007Assignee: International Business Machines CorporationInventors: Joerg Appenzeller, Joachim Knoch