Abstract: A method and apparatus, the method including: forming a recess in a graphene layer wherein the recess creates a boundary between a first portion of the graphene layer and a second portion of the graphene layer; depositing electrically insulating material within the recess; and depositing an electrically conductive material over the insulating material.

Abstract: A piezoelectronic device and a method of fabricating the same are provided. The piezoelectronic device has a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape.

Abstract: A two-step hydrogen anneal process has been developed for use in fabricating semiconductor nanowires for use in non-planar semiconductor devices. In the first part of the two-step hydrogen anneal process, which occurs prior to suspending a semiconductor nanowire, the initial roughness of at least the sidewalls of the semiconductor nanowire is reduced, while having at least the bottommost surface of the nanowire pinned to an uppermost surface of a substrate. After performing the first hydrogen anneal, the semiconductor nanowire is suspended and then a second hydrogen anneal is performed which further reduces the roughness of all exposed surfaces of the semiconductor nanowire and reshapes the semiconductor nanowire. By breaking the anneal into two steps, smaller semiconductor nanowires at a tight pitch survive the process and yield.

Abstract: A two-step hydrogen anneal process has been developed for use in fabricating semiconductor nanowires for use in non-planar semiconductor devices. In the first part of the two-step hydrogen anneal process, which occurs prior to suspending a semiconductor nanowire, the initial roughness of at least the sidewalls of the semiconductor nanowire is reduced, while having at least the bottommost surface of the nanowire pinned to an uppermost surface of a substrate. After performing the first hydrogen anneal, the semiconductor nanowire is suspended and then a second hydrogen anneal is performed which further reduces the roughness of all exposed surfaces of the semiconductor nanowire and reshapes the semiconductor nanowire. By breaking the anneal into two steps, smaller semiconductor nanowires at a tight pitch survive the process and yield.

Abstract: A medical device or analytical device comprising a fluid-impervious surface comprising a base surface, at least one distinct region of the base surface covered by a mixed monolayer film, the mixed monolayer film comprising a species having a functional group M1 and a species having a functional group M2 where M1 and M2 have different surface energies, the mixed monolayer forming a surface energy gradient wherein at least one of the species used to form the monolayer on the surface comprises a biopolymer-resistant domain.

Abstract: A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material.

Abstract: A long range, periodically ordered array of discrete nano-features (10), such as nano-islands, nano-particles, nano-wires, non-tubes, nano-pores, nano-composition-variations, and nano-device-components, are fabricated by propagation of a self-assembling array or nucleation and growth of periodically aligned nano-features. The propagation may be induced by a laterally or circularly moving heat source, a stationary heat source arranged at an edge of the material to be patterned (12), or a series of sequentially activated heaters or electrodes. Advantageously, the long-range periodic array of nano-features (10) may be utilized as a nano-mask or nano-implant master pattern for nano-fabrication of other nano-structures.

Abstract: A cooling system comprising a plurality of coolant channels comprising a fluid-impervious surface comprising a base surface, at least one distinct region of the base surface covered by a mixed monolayer, the mixed monolayer comprising a species having a functional group M1 and a species having a functional group M2 where M1 and M2 have different surface energies, the mixed monolayer forming a surface energy gradient within the region and wherein any portions of the surface that border the at least one distinct region have substantially equal surface energies.

Abstract: The present invention is a process for uniformly depositing nanomaterials having particles smaller than 1 ?m (i.e., nanoparticles) onto a surface of a base material (substrate or surface). The process is used to deposit any solid (nanoparticle) of any shape such as nanofibers, nanotubes, nanoclays (e.g., platelet shaped), nano-spheres, or irregularly shaped granules. The base material upon which the nano-particles are deposited can be made of any material. The method substantially prevents the deposition on the base material of larger particles (contaminants or clusters of the nanoparticles) which are often mixed with the nanomaterials. The amount of deposition and the range of particle sizes to be deposited can also be controlled by this method.

Abstract: Composition of carbon nanotubes (CNTs) are produced into inks that are dispensable via ink jet or other deposition processes. The CNT ink is dispensed into wells and allowed to dry so as to formed a cathode structure. It is important to note that after the CNT ink is deposited to form a cathode structure, no further post-deposition processes are performed, such as the removal of sacrificial layers, which could damage the CNT ink.

Abstract: A thin film pattern forming device includes a chamber case having an inner space communicated with the outside, a first fixing unit provided in the chamber case, a pattern electrode plate having a certain shape and fixed to the first fixing unit, and a second fixing unit provided in the chamber case and spaced apart from the pattern electrode plate. A substrate on which an inked metallic nano-material is deposited is received on the second fixing unit. The device also includes a power supply unit for supplying power to the first fixing unit and the second fixing unit, and a drying unit for drying the inked metallic nano-material patterned on the substrate.

Abstract: A surface energy gradient on a fluid-impervious surface and method of its creation comprising the steps of a) Exposing a base surface having a proximal and a distal portion to a first solution comprising at least one molecule of the formula X-J-M1 wherein X and M1 represent separate functional groups and J represents a spacer moiety that, together, are able to promote formation from solution of a self-assembled monolayer for sufficient time to form a monolayer surface having a uniform surface energy on the base surface. b) Removing a portion of the monolayer of (a) such that a portion of the base surface is again fully or partially exposed. (c) Exposing the portion of the base surface from (b) to at least one other molecule including a functional group having a different surface energy from that of the functional group removed in(b) such that a surface energy gradient from a proximal location to a distal location is formed.

Abstract: A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

Abstract: Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods.

Abstract: Faceted catalytic dots are used for directing the growth of carbon nanotubes. In one example, a faceted dot is formed on a substrate for a microelectronic device. A growth promoting dopant is applied to a facet of the dot using an angled implant, and a carbon nanotube is grown on the doped facet of the dot.

Abstract: A bulk-doped semiconductor may be at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may have a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof.

Abstract: The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.

Abstract: Apparatus and techniques are provided for modifying and measuring surfaces of diamond workpieces and other workpieces with nanoscale precision. The apparatus and techniques exploit scanning probe microscopy (SPM) and atomic force microscopy (AFM) at a wide range of operating temperatures. In some embodiments, the SPM/AFM apparatus also includes an interferometric microscope and/or acoustic-wave microscope for making high-precision measurements of workpiece surfaces.

Abstract: Substantially enhanced field emission properties are achieved by using a process of covering a non-adhesive material (for example, paper, foam sheet, or roller) over the surface of the CNTs, pressing the material using a certain force, and removing the material.

Abstract: Composition of carbon nanotubes (CNTs) are produced into inks that are dispensable via printing or stencil printing processes. The CNT ink is dispensed into wells formed in a cathode structure through a stencil.

Abstract: Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods.

Abstract: Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

Abstract: Particles, which may include nanoparticles, are mixed with carbon nanotubes and deposited on a substrate to form a cold cathode. The particles enhance the field emission characteristics of the carbon nanotubes. An additional activation step may be performed on the deposited carbon nanotube mixture to further enhance the emission of electrons.