Abstract: A method and apparatus, the method including: forming a recess in a graphene layer wherein the recess creates a boundary between a first portion of the graphene layer and a second portion of the graphene layer; depositing electrically insulating material within the recess; and depositing an electrically conductive material over the insulating material.

Abstract: A two-step hydrogen anneal process has been developed for use in fabricating semiconductor nanowires for use in non-planar semiconductor devices. In the first part of the two-step hydrogen anneal process, which occurs prior to suspending a semiconductor nanowire, the initial roughness of at least the sidewalls of the semiconductor nanowire is reduced, while having at least the bottommost surface of the nanowire pinned to an uppermost surface of a substrate. After performing the first hydrogen anneal, the semiconductor nanowire is suspended and then a second hydrogen anneal is performed which further reduces the roughness of all exposed surfaces of the semiconductor nanowire and reshapes the semiconductor nanowire. By breaking the anneal into two steps, smaller semiconductor nanowires at a tight pitch survive the process and yield.

Abstract: A two-step hydrogen anneal process has been developed for use in fabricating semiconductor nanowires for use in non-planar semiconductor devices. In the first part of the two-step hydrogen anneal process, which occurs prior to suspending a semiconductor nanowire, the initial roughness of at least the sidewalls of the semiconductor nanowire is reduced, while having at least the bottommost surface of the nanowire pinned to an uppermost surface of a substrate. After performing the first hydrogen anneal, the semiconductor nanowire is suspended and then a second hydrogen anneal is performed which further reduces the roughness of all exposed surfaces of the semiconductor nanowire and reshapes the semiconductor nanowire. By breaking the anneal into two steps, smaller semiconductor nanowires at a tight pitch survive the process and yield.

Abstract: An imprint method, in which pattern forming is performed by having a light curable material applied on a sample face of a substrate being a processing target hardened by being exposed to light in a state where the light curable material and a pattern formed surface of a template contact each other, the pattern formed surface having a concave-convex pattern formed thereon; wherein in one exposure performed with respect to a predetermined shot of the light curable material, an exposure amount at a light curable material on a first region which contacts a pattern formed region including the concave-convex pattern of the template is greater than an exposure amount at a light curable material on a second region which at least contacts a part of a pattern periphery region of the template, the pattern periphery region existing in a periphery of the pattern formed region of the template.

Abstract: A magnetic circuit in one aspect comprises a plurality of tapered magnetic wires each having a relatively wide input end and a relatively narrow output end, with the output end of a first one of the tapered magnetic wires being coupled to the input end of a second one of the tapered magnetic wires. Each of the tapered magnetic wires is configured to propagate a magnetic domain wall along a length of the wire in a direction of decreasing width from its input end to its output end. In an illustrative embodiment, the magnetic circuit comprises a logic buffer that includes at least one heating element. The heating element may be controlled to facilitate transfer of a magnetic moment from the output end of the first tapered magnetic wire to the input end of the second tapered magnetic wire.

Abstract: The invention provides methods of using positionally controlled molecular tools in an inert environment (such as ultra high vacuum) to fabricate complex atomically precise structures, including diamond, graphite, nanotubes, fullerenes, additional sets of the selfsame molecular tools, and others. Molecular tools have atomically precise tooltips which interact directly with a workpiece to add, remove, and modify specific atoms and groups of atoms, and have handles by which they can be held and positioned; tools can be recharged after use. Specific tooltips are brought into contact with and bond to specific feedstock molecules distributed on a presentation surface, and then transfer said feedstock molecules to specific atomic sites on a workpiece using mechanosynthetic chemical reactions. Specific sites on a workpiece can be made chemically reactive, facilitating the transfer of specific groups to them.

Abstract: The invention provides methods of using positionally controlled molecular tools in an inert environment (such as ultra high vacuum) to fabricate complex atomically precise structures, including diamond, graphite, nanotubes, fullerenes, additional sets of the selfsame molecular tools, and others. Molecular tools have atomically precise tooltips which interact directly with a workpiece to add, remove, and modify specific atoms and groups of atoms, and have handles by which they can be held and positioned; tools can be recharged after use. Specific tooltips are brought into contact with and bond to specific feedstock molecules distributed on a presentation surface, and then transfer said feedstock molecules to specific atomic sites on a workpiece using mechanosynthetic chemical reactions. Specific sites on a workpiece can be made chemically reactive, facilitating the transfer of specific groups to them.

Abstract: A non-majority magnetic logic gate device for use in constructing compact and power efficient logical magnetic arrays is presented. The non-majority magnetic logic gate device includes a substrate, symmetrically aligned magnetic islands (SAMIs), at least one misaligned magnetic island (MAMI), magnetic field inputs (MFIs), and at least one magnetic field output (MFO). The SAMIs and MAMI are electrically isolated from each other but are magnetically coupled to one another through their respective magnetic fringe fields. The MAMI is geometrically and/or angularly configured to exhibit a magnetization ground state bias which is dependent upon which direction the applied magnetic clock field is swept. Non-majority logic gates can be made from layouts containing the SAMIs and the MAMI which contain a smaller number of components as comparable majority logic gate layouts.

Abstract: The present invention provides a method and an apparatus for producing a two-dimensional patterned beam, e.g. a two-dimensional patterned and focused ion beam, for fabricating a nano-structure on a substrate with the precursor gas. In comparison with the conventional focused ion beam that is applied for fabricating a dot-like nano-structure the method is more simplified and easy to be achieved.

Abstract: Faceted catalytic dots are used for directing the growth of carbon nanotubes. In one example, a faceted dot is formed on a substrate for a microelectronic device. A growth promoting dopant is applied to a facet of the dot using an angled implant, and a carbon nanotube is grown on the doped facet of the dot.

Abstract: Substantially enhanced field emission properties are achieved by using a process of covering a non-adhesive material (for example, paper, foam sheet, or roller) over the surface of the CNTs, pressing the material using a certain force, and removing the material.