Abstract: A static random access memory (“SRAM”) is provided which includes a plurality of SRAM cells arranged in an array. The array includes a plurality of rows and a plurality of columns. The SRAM includes a plurality of voltage control corresponding to respective ones of the plurality of columns of the array. Each of the plurality of voltage control circuits are coupled to an output of a power supply, each voltage control circuit having a function to temporarily reduce a voltage provided to power supply inputs of a plurality of SRAM cells that belong to a selected column of columns of the SRAM. The selected column is selected and the power supply voltage to that column is reduced during a write operation in which a bit is written to one of the SRAM cells belonging to the selected column.

Abstract: A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) of an integrated circuit are provided. A first strain is applied to the channel region of the PFET but not the NFET via a lattice-mismatched semiconductor layer such as silicon germanium disposed in source and drain regions of only the PFET and not of the NFET. A process of making the PFET and NFET is provided. Trenches are etched in the areas to become the source and drain regions of the PFET and a lattice-mismatched silicon germanium layer is grown epitaxially therein to apply a strain to the channel region of the PFET adjacent thereto. A layer of silicon can be grown over the silicon germanium layer and a salicide formed from the layer of silicon to provide low-resistance source and drain regions.

Abstract: A method is provided of forming contact vias. A dielectric region is formed to overlie substantially all of a transistor structure, the dielectric region having a substantially planar upper surface. A dielectric barrier layer is formed to overlie the upper surface of the dielectric region, the dielectric barrier layer being adapted to substantially prevent diffusion of one or more materials from above the dielectric barrier layer into the dielectric region. A first contact via is formed to extend through the dielectric barrier layer and the dielectric region to provide conductive communication with a conductive member of the transistor structure. A second contact via is formed to extend through the dielectric barrier layer and the dielectric region to provide conductive communication with one of a source region or a drain region of the transistor structure.

Abstract: A method is provided of forming a contact to a semiconductor structure. A current-conducting member is formed which extends horizontally over a first portion of a semiconductor device region but not over a second portion of such semiconductor device region. A first film is formed which extends over the second portion and only partially over the member to expose a contact portion of the member. A first contact via is formed in conductive communication with the contact portion. The first contact via has a silicide-containing region self-aligned to an area of the member contacted by the contact via. A second contact via is formed in conductive communication with the second portion, the second contact via extending through the first film.

Abstract: An apparatus and method for providing high speed computing power with efficient power consumption in a computing environment comprising a comparator with at least one input feed; a sign selector in electronic communication with the comparator; and result flag generator in electronic communication with both the sign selector and the comparator. The sign selector has input data feeds and an equivalent number of dedicated indicators for identifying signed numbers from unsigned numbers for each of the input data feeds. The result flag generator receives a first resultant feed from the comparator and a second resultant feed from the sign selector. The sign selector can be designed to provide a resultant output. The resultant output is generated after collective operations have been performed on the input feeds and selectively on other feeds such as a sign feed and an Ini feed.

Abstract: An integrated circuit and method of fabrication are provided in which the integrated circuit includes a field effect transistor (FET) having a channel region and source and drain regions adjacent to the channel region. A first stressed region having a first type of stress is provided to underlie the channel region, in which the first type of stress is either compressive type or tensile type. Second stressed regions having a second type of stress are provided to underlie the source and drain regions, in which the second type of stress is an opposite one of the compressive type or tensile type stress of the first stressed region.

Abstract: According to an aspect of the invention, a structure is provided in which an array of trench capacitors includes a well contact to a merged buried plate diffusion region. The array, which is disposed in a substrate, includes a contact for receiving a reference potential. Each trench capacitor includes a node dielectric and a node conductor formed within the trench. Buried plate (BP) diffusions extend laterally outward from a lower portion of each trench of the array, the BP diffusions merging to form an at least substantially continuous BP diffusion region across the array. An isolation region extends over a portion of the BP diffusion region. A doped well region is formed within the substrate extending from a major surface of the substrate to a depth below a top level of the substantially continuous BP diffusion region. An electrical interconnection is also provided to the well region.

Abstract: A method of forming a field effect transistor is provided which includes forming an amorphized semiconductor region having a first depth from a single-crystal semiconductor region and subsequently forming a first gate conductor above a channel portion of the amorphized semiconductor region. A first dopant including at least one of an n-type dopant and a p-type dopant is then implanted to a second depth into portions of the amorphized semiconductor region not masked by the first gate conductor to form source/drain portions adjacent to the channel portion. The substrate is then heated to recrystallize the channel portion and the source/drain portions of the amorphized semiconductor region. After the heating step, at least a part of the recrystallized semiconductor region is locally heated to activate a dopant in at least one of the channel portion and the source/drain portion.

Abstract: A circuit is provided which is operable to program an electrically alterable element, e.g., fuse or antifuse, to a programmed state and determine whether the electrically alterable element is in the programmed state or not. Such circuit includes a multiple conduction state field effect transistor (“multi-state FET”) having at least one of a source or a drain coupled to the electrically alterable element to apply a current to the electrically alterable element. The multi-state FET has a first threshold voltage and a second threshold voltage, both being effective at the same time, the second threshold voltage being higher than the first threshold voltage.

Abstract: A structure and method are provided for forming a collar surrounding a portion of a trench in a semiconductor substrate, the collar having a lower edge self-aligned to a top edge of a buried plate disposed adjacent to a lower portion of the trench.

Abstract: A chip is provided which includes an active semiconductor region and a field effect transistor (“FET”) having a channel region, a source region and a drain region all disposed within the active semiconductor region. The FET has a longitudinal direction in a direction of a length of the channel region, and a transverse direction in a direction of a width of the channel region. A first dielectric stressor element having a horizontally extending upper surface extends below a portion of the active semiconductor region, such as a northwest portion of the active semiconductor region. A second dielectric stressor element having a horizontally extending upper surface extends below a second portion of the active semiconductor region, such as a southeast portion of the active semiconductor region. Each of the first and second dielectric stressor elements shares an edge with the active semiconductor region, the edges extending in directions away from the upper surface.

Abstract: A probe apparatus includes a nest element operable to precisely locate a chip having a plurality of exposed interconnects on a face of the chip to permit conductive connection to the chip through the interconnects. The nest element includes a pocket dimensioned to locate the chip within a tolerance of less than a width of one of the interconnects, and tapered walls extending upwardly and outwardly from the pocket, the tapered walls adapted to guide the chip into the pocket. One or more piezoelectric elements can be attached to or provided within to the nest element to impart vibration to the nest element, causing the chip to be “fluidized” such that the chip is guided into the pocket under the force of gravity or other externally applied force.

Abstract: A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.

Abstract: Structure and method are provided for forming a bipolar transistor. As disclosed, an intrinsic base layer is provided overlying a collector layer. A low-capacitance region is disposed laterally adjacent the collector layer. The low-capacitance region includes at least one of a dielectric region and a void disposed in an undercut underlying the intrinsic base layer. An emitter layer overlies the intrinsic base layer, and a raised extrinsic base layer overlies the intrinsic base layer.

Abstract: As disclosed herein, a microelectronic circuit and method are provided for improving signal integrity at a transmission line. The circuit includes a programmably adjustable impedance matching circuit which is coupled to a transmission line which includes a programmably adjustable inductive element. The programmably adjustable impedance matching circuit is desirably provided on the same chip as a receiver or transmitter to which the transmission line is coupled, or alternatively, on an element packaged together with the chip that includes the receiver or transmitter. The impedance of the programmably adjustable impedance matching circuit is adjustable in response to control input to improve signal integrity at the transmission line.

Abstract: An integrated circuit is operable to measure tolerance to jitter in a data stream signal. A Clock And Data Recovery Circuit (“CDR”) thereon recovers a phase of a clock for sampling a data stream signal containing a repeatable known sequence of data values and then samples the data stream signal with the recovered clock phase to obtain data stream sample data. An error rate determination circuit independently generates the repeatable known sequence of data values and compares them with the data stream sample data to determine an associated error rate. A control circuit coupled to the CDR delays the recovered clock phase by a predetermined amount a plurality of times and monitors the error rate after each time it delays the recovered clock phase. In this way, a maximum delayed clock phase is determined, representing a right timing signal margin for which the data stream signal can be sampled.

Abstract: Systems are provided for generating and distributing a plurality of reference currents on an integrated circuit. More particularly, an integrated circuit is provided which includes a reference current generating system. The reference current generating system includes a first reference current generator disposed at a first location of the integrated circuit which is operable to generate a plurality of first reference currents. A plurality of second reference current generators are disposed at a plurality of second locations of the integrated circuit. Each of the second reference current generators are operable to generate a second reference current from one of the plurality of first reference currents. In a particular example, the first location at which the first reference current generator is disposed is a central location and the second locations are disposed remote from the first location.

Abstract: An integrated circuit is provided which includes a sensing circuit. In the sensing circuit, a pair of conductors including a first conductor and a second conductor are adapted to conduct a first differential signal having a small voltage difference and a second differential signal having a rail-to-rail voltage difference. A sense amplifier is coupled to the pair of conductors, the sense amplifier being operable to amplify the first differential signal into the second differential signal. The sensing circuit further includes a multiple conduction state field effect transistor or “multi-state FET” which has a source, a drain, and a gate operable to control conduction between the source and the drain.

Abstract: An apparatus is provided for measuring an output of a high-speed data transmission circuit. The apparatus includes a programmable reference voltage generator operable to generate a reference voltage that is variable between a plurality of levels. The apparatus also includes a quantizer to quantize an output of the high-speed data transmission circuit relative to the reference voltage level input thereto. Also included is a clock generator operable to generate a clock having a transitioning time (rise-time, fall-time or both) that is less than one quarter of a minimum switching period of the output of the circuit. Finally, the apparatus includes a sampler operable to sample the quantized output with the clock to produce a plurality of samples which measure the output of the circuit.

Abstract: A structure is provided in which a semiconductor device region has a first portion and a second portion, and a device disposed in the first and second portions. A current conducting member extends horizontally over the first portion but not over the second portion. A dielectric region, having a substantially planar upper surface, is disposed over the member, the dielectric region overlying substantially all of an area of the semiconductor device region that is occupied by the device. A dielectric barrier layer overlies the upper surface of the dielectric region, over substantially all of the area that is occupied by the device. The barrier layer is adapted to substantially prevent diffusion of one or more materials from above the barrier layer into the dielectric region. A contact via extends through the barrier layer and the dielectric region, the contact via in conductive communication with at least one of the member and the second portion of the semiconductor device region.