Abstract: A loop-type voltage regulating device, particularly for regulating a voltage of an automotive electric system that includes at least one thermal engine, a voltage regulator and an alternator operative to deliver a system regulated-voltage signal to and receive a regulation signal from the voltage regulator, the voltage regulating device including a control unit within the regulating loop, which unit is connected between the thermal engine and the voltage regulator and is adapted to supply the latter with a signal related to the engine operation.

Abstract: A device for detecting load impedance having an analog circuit portion for detecting the impedance value of a load, and a digital circuit portion adapted to provide load impedance type information. The analog circuit portion having two power MOS transistors connected in series to each other and between a supply voltage and the ground, and a pair of mirror MOS transistors common-connected with their respective gate terminals to the gate terminals of the power MOS transistors. The digital circuit portion includes a first comparitor to determine whether the output current of an audio amplifier is higher or lower than a threshold value and a second comparator to determine whether the output voltage of the amplifier is higher than a threshold voltage, a memory to store output signals of the first and second comparitors, and a logic circuit arranged in cascade with the memory to output a load-type indication signal.

Abstract: Process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent the gate and a second highly doped sub-region spaced apart from the gate. The salicide is formed selectively at least over the second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region.

Abstract: An integrated device having a substrate wherein a buried layer and an epitaxial region have been formed, and an isolation structure adapted to define a plurality of isolation wells for integrating the components of the integrated device therein, the isolation structure including plural dielectrically insulated regions or dielectric trenches being filled with a conductive material to form a plurality of contact regions to buried regions of the device, the buried regions including, in particular, the substrate and buried layer.

Abstract: An electromagnetic transponder of the type including a parallel oscillating circuit adapted to extracting a supply signal from a radiated field, at least one detuning element controllable from the oscillating circuit, and means for measuring a voltage depending on the voltage level recovered across the terminals of the oscillating circuit, and for activating the detuning element when this voltage exceeds at least a predetermined activation threshold.

Abstract: A decoupling circuit for decoupling conduction lines from each other, the circuit including at least one pass gate element having conduction terminals connected to the conduction lines and having at least one control terminal. The decoupling circuit includes at least one protection circuit inserted between the control terminal and at least one of the conduction lines, and including at least one protection transistor connected to the control terminal and to the at least one conduction line, and configured to take in a disturbing signal passing through the pass gate element (N1) to properly decouple the conduction lines from each other on the occurrence of a disturbing condition.

Abstract: An integrated power device having a power transistor made up of a first diode and a second diode that are connected together in series between a collector region and emitter-contact region of the power transistor to define a common intermediate node, a control circuit including a high-voltage region bonded on the emitter-contact region (14) by means of an adhesive layer, and biasing circuit connected between the common intermediate node and the high-voltage region. The biasing circuit including a contact pad electrically connected to the common intermediate node, an electrical connection region that is in electrical contact with the high-voltage region (30), and a wire having a first end soldered on the contact pad and a second end soldered on said electrical connection region.

Abstract: An integration process in a SOI substrate of a semiconductor device having at least a dielectrically insulated well, the process including: an oxidizing step directed to form an oxide layer; a depositing step of a nitride layer onto the oxide layer; a masking step, carried out onto the nitride layer using a resist layer and directed to define suitable photolithographic openings for forming at least one dielectric trench effective to provide side insulation for the well; an etching step of the nitride layer and oxide layer, as suitably masked by the resist layer, the nitride layer being used as a hardmask; a step of forming the at least one dielectric trench, which step comprises at least one step of etching the substrate, an oxidizing step of at least sidewalls of the at least one dielectric trench, and a step of filling the at least one trench with a filling material; and a step of defining active areas of components to be integrated in the well, being carried out after the step of forming the at least one d

Abstract: A method of producing suspended elements for electrical connection between two portions of a micro-mechanism that can move relative to one another provides for the formation of a layer of sacrificial material, the formation of the electrical connection elements on the layer of sacrificial material, and the selective removal of the layer of sacrificial material beneath the electrical connecting elements, the layer of sacrificial material being a thin film with at least one adhesive side that can be applied dry to the surface of the micro-mechanism.

Abstract: A process for forming a thin layer of Silicon nanocrystals in an oxide layer is disclosed. The process includes, on a semiconductive substrate, thermally oxidizing a first portion of the substrate into an oxide layer, forming Silicon ions within the layer of oxide, and thermally treating the Silicon ions to become the thin layer of Silicon nanocrystals. In the inventive process the formation of the Silicon ions is by ionic implantation of the Silicon ions into the oxide at an ionization energy of between 0.1 keV and 7 keV, and preferably between 1 and 5 keV. This allows the Silicon atoms to coalesce in a lower temperature than would otherwise be possible. Additionally, more than one layer of nanocrystals can be formed by performing more than one implantation at more than one energy level. Embodiments of the invention can be used to form non-volatile memory devices with a very high quality having a very small size.

Abstract: An amplifying circuit receiving an input voltage and a reference voltage equal to a fraction of the circuit supply voltage, the reference voltage provided by a time constant circuit, including a circuit for, upon power-on, inhibiting the amplifying circuit for as long as the difference between the value of the provided reference voltage and the voltage at the output of the time constant circuit is greater than a determined threshold.

Abstract: An integrated cellular network structure that is programmable to solve partial derivative differential equations in order to control a phenomenon of diffusion or a propagation of electric drive pulses for robot actuators. Such structure includes analog and digital portions interconnected with each other; the analog portion having a matrix array of analog cells arranged to receive data from an I/O interface, and the digital portion having first and second memory arrays for storing a desired configuration and the initial state of such analog matrix array, respectively.

Abstract: A method of manufacturing an integrated semiconductor device having at least one non-volatile floating gate memory cell and at least one logic transistor. The method includes growing a first gate oxide layer over a silicon substrate, depositing a first polysilicon layer over the first gate oxide layer, selectively etching and removing the first polysilicon layer in order to define the floating gate of the memory cell, introducing dopant in order to obtain source and drain regions of the memory cell, depositing a dielectric layer, selectively etching and removing the dielectric layer and the first polysilicon layer in a region wherein the logic transistor will be formed, depositing a second polysilicon layer, selectively etching and removing the second polysilicon layer in order to define the gate of the logic transistor and the control gate of the memory cell.

Abstract: A method and apparatus for reducing the computational load of a dual-rate encoding system having a multi-pulse maximum likelihood quantization process configured to transmit at a first transmission rate and to search subframes of excitation signals according to a reduced number of gain scale factors; and an algebraic code-excited linear prediction block configured to perform a first correlation threshold test for entry into an embedded signal processing loop and a second correlation threshold test for entry into a previous signal processing loop in which the embedded signal processing loop is embedded to reduce the number of times the previous signal processing loop and the embedded signal processing loop are entered, thereby reducing the computational load of the system.

Abstract: A stackable module for a processor system including a support plate with a set of topside circuit components mounted to its topside, and topside and underside connectors. The module is stackable with other such modules and are provided with conductive tracks that are arranged to convey transport stream data and transport stream control signals between modules in a stack. A stack of such modules in a processor system is also provided.

Abstract: An electronic component, such as an IGBT, that presents a control terminal for receiving a stepwise control signal and at least one other terminal adapted for reaching a given voltage level by effect of the application of the step signal, with the possibility of overshoot occurring; and a damping resistive element interposed between the control terminal and the at least one other terminal. The damping resistive element shows a current saturated behavior correlated to voltage increase applied at the terminals towards the given voltage level, thus eliminating the risk of occurrence of overshoot in the voltage of the IGBT collector, and preventing the undesired re-ignition of the IGBT when it is in a cut-off condition, by inducing an overvoltage on the collector terminal.

Abstract: A VLSI architecture adapted to be implemented in the form of a reusable IP cell and including a motion estimation engine, configured to process a cost function and identify a motion vector which minimizes the cost function, an internal memory configured to store the sets of initial candidate vectors for the blocks of a reference frame, first and second controllers to manage the motion vectors and manage an external frame memory, a reference synchronizer to align, at the input to the estimation engine, the data relevant to the reference blocks with the data relevant to candidate blocks coming from the second controller, and a control unit for timing the units included in the architecture and the external interfacing of the architecture itself.

Abstract: An electronic device for driving an actuator device for a hard disk and a motor for turning the hard disk, the device having a first driving circuit connected to the rotation motor and integrated in a chip of semiconductor material having a substrate defining a reference-potential region, a second driving circuit integrated in the chip and connected to a first actuation stage of the actuator device, and a third driving circuit integrated in the chip and connected to a second actuation stage of the actuator device. The actuator device supports a read/write transducer of the hard disk. The first actuation stage performs a rough displacement of the read/write transducer, while the second actuation stage performs a finer displacement of the same read/write transducer.

Abstract: A method of operating an SAR-type analog-to-digital converter to match the dynamic range of an input voltage signal to be converted with the full scale range of the converter, the converter including at least one array of binary weighted capacitors. The method includes the step of obtaining a digital gain code that represents the ratio between the full scale range and the dynamic range of the voltage signal to be converted, applying the voltage signal to be converted to the capacitor array so as to charge with the voltage signal to be converted only those array capacitors having the same binary weights as the bits of the gain code that have a selected binary value, and selectively coupling the capacitors of the array to one of a first and second predetermined reference voltage terminals according to an SAR technique, to obtain an output digital code corresponding to the input voltage signal.

Abstract: A circuit device for restoring the symmetry of an analog signal originated by the reading of data from magnetic supports, including at least one differential cell multiplier whose cell includes a pair of input MOS transistors having respective conduction terminals linked together at a circuit node. Advantageously, provided in parallel with each of the cell input transistors, are a plurality of transistors individually connectable to and disconnectable from each of the input transistors by corresponding switches.