Abstract: The present invention is a composition for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprising; (i) a solvent blend of at least three discrete solvents, (ii) at least one organic sulfonic acid, and (iii) at least one corrosion inhibitor. The present invention is also a method for using the composition. This composition and method succeed in removing such multi-layer photoresist at temperatures less than 65° C. and in contact times under three minutes, allowing high throughput on single wafer tools.

Abstract: This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.

Abstract: The present invention is a quartz bubbler container with cross purge capability. This cross purge allows the user to easily purge air and chemical from the valve inlet and outlet by simply flowing inert gas, and avoids the requirement for a more complicated vacuum purging apparatus. The design incorporates two small footprint 3-way valves mounted on the bubbler container inlet and outlet connectors. The 3rd port of each valve is piped together between the valves with a crosspurge line. The valves are corrosion resistant, leak free, maintenance free, non-leaching of impurities, and can accommodate an optional breakseal crusher that will perforate quartz break seals (on the inlet and outlet of ampoule). Liquid out containers of various materials of construction are also contemplated.

Abstract: The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.

Abstract: A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

Abstract: The invention relates to an improvement in apparatus and process for the formation of a complex of Lewis acidic or Lewis basic gases in a reactive liquid of opposite character and for the breaking (fragmentation) of said complex associated with the recovery of the Lewis gas therefrom. The improvement resides in forming finely divided droplets of reactive liquid and controlling the temperature, pressure and concentration of said Lewis gas of opposite character to provide for (a) the formation of said complex between said gas and reactive liquid or (b) the breaking of said complex and the recovery of the atomized droplets of reactive liquid.

Abstract: A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.

Abstract: A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

Abstract: A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0?SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

Abstract: Disclosed is a method for treating a gas stream rich in hydrogen sulfide by providing one or more feed gas streams rich in hydrogen sulfide into a Claus reaction furnace, providing air into the Claus reaction furnace, providing supplemental oxygen into the Claus reaction furnace, and providing steam to the Claus reaction furnace, where the steam is in addition to any steam that may be present in gases that are recycled to the Claus reaction furnace. The components are then reacted at a temperature above about 2400° F. and at a pressure sufficient to cause hydrogen sulfide to be converted into sulfur.

Abstract: A residue cleaning composition includes: (a) water; (b) a fluoride; (c) a pH buffer system including an organic acid and a base. The organic acid can be an aminoalkylsulfonic acid and/or an aminoalkylcarboxylic acid. The base can be an amine and/or a quaternary alkylammonium hydroxide. The composition is substantially free of an added organic solvent and has a pH ranging from about 5 to about 12. A method of removing residue from a substrate includes contacting the residue with the cleaning composition. A method for defining a pattern includes etching the pattern through a photoresist into a substrate, heating the patterned substrate to a temperature sufficient to ash the photoresist and provide a residue, and removing the residue by contacting the residue with the cleaning composition.

Abstract: A process and apparatus for the on-site delivery of a gas having improved purity to from a container filled with liquid under pressure and integrated with a purifier. In the process a portion of the liquid is converted to vapor by reducing the pressure in the container and expanding the thus formed vapor through a pressure reducer generating refrigeration. The cooled vapor is warmed against incoming vapor prior to exit from the purifier.

Abstract: The present invention provides an adsorbent for removing water and/or other oxygen-containing impurities from a fluid comprising ammonia to the ppb level and methods for making and using same. The adsorbent preferably comprises a substrate having a plurality of pores and a surface area that ranges from about 100 to about 2,500 m2/g and a compound disposed within a least a portion of the substrate. In certain preferred embodiments, the compound comprises at least one cation from the group consisting of ammonium (I), lithium (I), sodium (I), potassium (I), cesium (I); magnesium (II), calcium (II), strontium (II), barium (II), manganese (II), nickel (II), iron (II), zinc (II); aluminum (III), indium (III), iron (III), and zirconium (IV) or combinations thereof that is ionically associated with an anion from the group consisting of halide, sulfide, sulfite, or sulfate.

Abstract: This invention relates to an improvement in a deposition process for producing low dielectric films having a dielectric constant of 3, preferably <2.7 and lower. The process comprises the steps: (a) forming a liquid precursor solution comprised of an organosilicon source containing both Si—O and Si—C bonds and solvent; (b) generating a liquid mist of said liquid precursor solution, said mist existing as precursor solution droplets having a number average droplet diameter size of less than 0.5 ?m; (c) preferably electrically charging the liquid mist of said liquid precursor solution droplets; (d) depositing liquid mist of said liquid precursor solution droplets onto a substrate; and, (e) converting the thus deposited liquid mist of said liquid precursor solution droplets to a solid, low dielectric film.

Abstract: A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si—H or N—H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si—H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.

Abstract: A method of detecting and calibrating dry fluxing metal surfaces of one or more components to be soldered by electron attachment using a gas mixture of reducing gas comprising hydrogen and deuterium, comprising the steps of: a) providing one or more components to be soldered which are connected to a first electrode as a target assembly; b) providing a second electrode adjacent the target assembly; c) providing a gas mixture comprising a reducing gas comprising hydrogen and deuterium between the first and second electrodes; d) providing a direct current (DC) voltage to the first and second electrodes to form an emission current between the electrodes and donating electrons to the reducing gas to form negatively charged ionic reducing gas and molecules of hydrogen bonded to deuterium; e) contacting the target assembly with the negatively charged ionic reducing gas and reducing oxides on the target assembly. Related apparatus is also disclosed.

Abstract: The present invention is directed to improvements in storage and delivery systems that allow for rapid fill and delivery of gases reversibly stored in a nonvolatile liquid medium, improvements in delivery and purity of the delivered gas. The low pressure storage and delivery system for gas which comprises: a container having an interior portion containing a reactive Lewis basic or Lewis acidic reactive liquid medium that is reversibly reacted with a gas having opposing Lewis acidity or basicity; a system for transferring energy into or out of the reactive liquid medium; or, a product gas purifier (e.g. a gas/liquid separator); or both.

Abstract: A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.

Abstract: A process for preparing bromo-1-oxypentafluorosulfanylbenzene is provided, the process including the step of brominating pentafluorosulfanyloxybenzene with a bromination agent to provide the bromo-1-oxypentafluorosulfanylbenzene. The process is more effective than prior art processes for preparing such compounds.

Abstract: The present invention is an apparatus and process for storing and delivering a low vapor pressure process chemical to a process tool for semiconductor fabrication, comprising: a) a bulk container for storing the process chemical; b) a process container for delivering the process chemical to the process tool; c) a first manifold for delivering process chemical from the bulk container to the process container; d) a solvent container containing a quantity of solvent, e) a second manifold for delivering the process chemical from the process container to a process tool; f) a solvent recovery container for containing used solvent and removed process chemical, and, g) a solvent evaporator to differentially remove solvent from process chemical in the solvent recovery container by entrainment in a carrier gas, vacuum removal, heating or combinations thereof. The containers can be baffled on their inert gas inlets. The cabinet can be heated.