Abstract: Method for the purification of a volatile metal hydride comprising obtaining a volatile metal hydride feed containing one or more acidic impurities, one of which is a sulfur-containing impurity; contacting the feed with an alkaline material and reacting at least a portion of the sulfur-containing impurity with the alkaline material to remove a portion of the sulfur-containing impurity from the feed and provide an intermediate purified material, wherein the contacting of the feed with an alkaline material is effected at a sub-ambient temperature; and contacting the intermediate purified product with an adsorbent material to remove at least a portion of the sulfur-containing impurity from the intermediate purified material and provide a purified volatile metal hydride product.

Abstract: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

Abstract: This invention relates generally to an improvement in low pressure storage and dispensing systems for the selective storing of gases having Lewis acidity or basicity, and the subsequent dispensing of said gases at pressures, e.g., generally below 5 psig and typically below atmospheric pressure, by modest heating, pressure reduction or both. The improvement resides in storing the gases in a reversibly reacted state within a reactive liquid having opposing Lewis basicity or acidity.

Abstract: This invention relates to 2-pentafluorosulfanylnapthalene, substituted derivatives thereof and to a process for producing naphthalene carrying an SF5 group. A 3-step process is employed wherein 1,4-dihydronaphthalene is reacted with pentafluorosulfanyl halide. Next the resulting 3-halo-2-pentafluorosulfanylnaphthalene or derivative is converted to 2-pentafluorosulfanyl-1,4-dihydronaphthalene or derivative by treatment with a base and subsequently transformed into pentafluorosulfanylnaphthalene by removing hydrogen atoms.

Abstract: Compositions containing certain organic solvents and a fluorine source are capable of removing photoresist and etching residue.

Abstract: Purification material for removing a contaminant from an impure hydride gas comprising an adsorbent comprising a reduced metal oxide on a porous support and a desiccant. The porous support may be selected from the group consisting of activated carbon, alumina, silica, zeolite, silica alumina, titania, zirconia, and combinations thereof. The reduced metal oxide may comprise one or more metals selected from the group consisting of Group I alkali metals (lithium, sodium, potassium, rubidium, and cesium), Group II alkaline earth metals (magnesium, calcium, strontium, and barium), and transition metals (manganese, nickel, zinc, iron, molybdenum, tungsten, titanium, vanadium, cobalt, and rhodium). The desiccant may be selected from the group consisting of hygroscopic metal salts, zeolites, single metal oxides, mixed metal oxides, and combinations thereof.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.

Abstract: A transportable container for high purity, high cost, liquid chemicals capable of maximizing dispensing of the liquid chemical content of the container at deviations from an upright position, comprising; a top wall, a side wall and a bottom wall, the bottom wall having an internal surface contacting liquid chemical with a concave upward contour having a lowest most point axially central to the container, an inlet, an outlet comprising a diptube through which the liquid chemical can be dispensed from said container with an outlet end adjacent the top surface and an inlet terminal end adjacent the lowest most point, a level sensor assembly having an output end adjacent the top surface and a terminal end adjacent the lowest most point; the diptube and the level sensor assembly being more proximate to one another at their terminal ends than their ends adjacent the top surface.

Abstract: Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4?n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.

Abstract: This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

Abstract: The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.

Abstract: A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stabilizer. The composition can further include a medium containing the abrasive and an oxidizing agent (e.g., hydrogen peroxide), wherein the at least one catalyst is adapted to catalyze oxidation of a substrate by the oxidizing agent. Preferably, the abrasive is alumina, titania, zirconia, germania, silica, ceria and/or mixtures thereof, the stabilizer includes B, W and/or Al, and the catalyst is Cu, Fe, Mn, Ti, W and/or V. Both the stabilizer and the catalyst are immobilized on the abrasive surface. The method includes applying the composition to a substrate to be polished, such as substrates containing W, Cu and/or dielectrics.

Abstract: A prewetted cleaning wipe for cleaning surfaces and having low volatile organic chemical and low nonvolatile residue properties comprising a wipe substrate wetted with an aqueous solution of high purity water and an effective amount of an acetylenic alcohol surface active agent. The surface active agent is preferably an acetylenic diol. Preferred acetylenic diols include dimethyl octynediol and tetramethyl decynediol.

Abstract: This invention describes an improvement in a process for purifying a nitrogen trifluoride (NF3) stream containing unreacted F2, HF, and nitrogen oxides from an NF3 reactor wherein the F2, and HF are removed and then the nitrogen oxides removed by adsorption. The improvement in the process resides in selectively removing the F2 from said NF3 stream without generating oxygen difluoride, removing HF and then removing said nitrogen oxides by adsorption. Further purification can be effected as desired.

Abstract: This invention relates to an improvement in a process and apparatus for delivering ultra high purity liquid carbon dioxide to a point of use at pressures above ambient without pumping. In the process a high purity carbon dioxide feed is charged to a vessel and at least partially solidified. Once filled, the slush or solid is isochorically heated, i.e., heated at constant vessel volume whereby the solid phase carbon dioxide is converted to a liquid. Liquid, then, is withdrawn from the vessel at a desired pressure at a rate at which the solid phase carbon dioxide is converted to a liquid. The improvement resides in effecting partial solidification and recycle of carbon dioxide.

Abstract: This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N?-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5 can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.

Abstract: A composition selected from the group consisting of bis(tert-butoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-butoxy)silanol, bis(tert-pentoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-pentoxy)silanol, bis(tert-pentoxy)(tert-butoxy)silanol, bis(tert-butoxy)(tert-pentoxy)silanol and mixtures thereof; its use to form a metal or metalloid silicate layer on a substrate and the synthesis of the mixed alkoxysilanols.

Abstract: The present invention is directed to an improved reaction process that allows for the achievement of excellent NF3 production yields, while minimizing the amount of unreacted fluorine exiting with the process gases and minimizing the amount of liquid melt waste (HF/NH3) produced by the process. The basic NF3 process resides in reacting F2 with an ammonium ion source, e.g., ammonium acid fluoride, under conditions for forming NF3. The improvement in the process comprises: introducing F2 and said ammonium ion source cocurrently and downflow through a packed column or monolith column at a first temperature; reacting said F2 and ammonium ion source in said column; and, removing a mixture of NF3 and byproducts from said column at a second temperature higher than said first temperature.

Abstract: Metal complexes, containing copper, silver, gold, cobalt, ruthenium, rhodium, platinum, palladium, nickel, osmium, and/or indium, and methods for making and using same are described herein. In certain embodiments, the metal complexes described herein may be used as precursors to deposit metal or metal-containing films on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.

Abstract: This invention pertains to complex mixtures of the formula M is a metal having a valence of from 2–6, L1 is an anionic ligand and L2 is a siloxide or silyl amide ligand suited for producing stable thin-film metal silicates, v is equal to the valence of the metal, and 0<x<v. The bonding is such that an M—O—Si or an M—N—Si linkage exists, respectively, and the stability for the complex is provided by the organic ligand. The invention also relates to a process for preparing the metal siloxide complexes. Thus, the complexes can be represented by the formulas (R)mM—(O—SiR1R2R3)n and (R)mM—[N—(SiR1R2R3)y(R4)2- y]n wherein M is a metal having a valence of 2–6, m and n are positive integers and m plus n is equal to the valence of the metal M. The R type groups, i.e., R, R1, R2, R3, and R4 represent an organo ligand.