Abstract: A method for eliminating interference when analyzing a test sample of a bulk inert gas in an ion mobility spectrometer is disclosed which includes the steps of providing an ionization source for the spectrometer to form ions of the bulk inert gas, mixing a reagent gas with the test sample prior to entry into the spectrometer to alter the nature of the ions formed by the bulk inert gas to shift the location of a bulk inert gas mobility peak such that a bulk inert gas mobility peak does not overlap with an impurity mobility peak of the ions of a trace impurity of interest, whereby bulk inert gas ions are quenched and a clusters of the reagent gas and the bulk gas are formed. Alternatively, the reagent gas may be mixed with the drift gas in the ion mobility spectrometer, rather than with the test sample.

Abstract: A method for producing a material selected from the group consisting of metal oxide, metal oxynitride and mixtures thereof on a substrate, comprising; reacting a first reactant selected from the group consisting of (R1R2N)xM(═NR3)y, (R4R5N)xM[&eegr;2—R6N═C (R7)(R8)]y and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N2O, NO, NO2, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce said material on said substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen, M═Ta, Nb, W or Mo or mixtures thereof, and when M═Ta or Nb, x=3 and y=1 and when M═W or Mo, y=x=2.

Abstract: A process and system for conditioning a bulk container for ultra-high purity liquefied gas. Vapor is generated in the container from a conditioning quantity of the ultra-high purity liquefied gas by imposing a temperature difference on the container so that the vapor condenses when a temperature difference is achieved. The resulting liquid reflux, e.g., the condensed liquid drips or flows back to the conditioning quantity of the liquified gas, washes or removes contaminants, e.g., particles, metal and moisture, from the interior surface of the container. A portion of the vapor is vented from the container for reclamation. The used conditioning liquid may also be reclaimed.

Abstract: A high flow rate, transportable, ultra high purity gas vaporization and supply system is provided which includes a vessel suitable for carrying large quantities of a liquefied gas, valves to operate with liquid or gas phases, a loading/unloading unit disposed on the vessel for loading and unloading the liquefied gas to be supplied, and a heater containing heating elements permanently positioned on the vessel to supply energy into the liquefied gas. The heater causes the liquefied gas to be supplied through the loading/unloading unit as a gas. A heater controller is also provided which uses process variables feedback for regulating the heating elements to maintain and regulate gas output.

Abstract: A device for measuring a total concentration of impurities in a sample gas is provided which includes a housing having an inlet to allow the sample gas to enter the housing, an emitter to generate ions from the sample gas, a field gradient to accelerate the ions toward a collector, the collector adapted to measure total ions, and an outlet to allow the sample gas to exit the housing, whereby a change in total ions received by the collector indicates a change in the total concentration of impurities in the sample gas.

Abstract: The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor.

Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

Abstract: A process is provided which includes the steps of providing a CO-SER unit, feeding a feed gas of an equimolar mix of CO2 and H2 with a slight excess of CO2 to the CO-SER unit to produce a CO-SER product gas of CO, a small amount of CO2, and substantially no H2 at high pressure, providing a TSA unit having a plurality of adsorber vessels, each adsorber vessel having an adsorbent capable of selectively adsorbing CO2, the adsorber vessel being at high pressure and ambient temperature, and feeding the CO-SER product gas to one of the adsorber vessels in the TSA unit to selectively remove CO2 gas to produce a TSA product gas that is of high purity and of high pressure. The feeding continues to the one adsorber vessel until a point prior to CO2 breakthrough occurring. The process further includes regenerating any adsorber vessels having adsorbent that is substantially spent.

Abstract: Carbon monoxide (CO) is removed from a nitrogen and CO containing gas stream such as feed air to an air separation process for recovery of a nitrogen product gas stream or a nitrogen product gas stream from an air separation process by adsorbing CO from said gas stream before or after separation of oxygen from said gas stream to produce a product gas stream containing less than 5 ppb of CO by contacting said gas stream With a solid adsorbent such as a Mn, Fe, Ni, Cu, Ag, Pd, Co, Pt or Au exchanged zeolite and periodically regenerating the adsorbent by desorption of CO therefrom under a flow of regenerating gas, and, if said gas stream is said feed air, separating oxygen therefrom to produce said nitrogen product.

Abstract: Gas is admitted to an in-container purification unit 202 via an inlet 212 located at or near the gas discharge end 220 of the unit. This feature is advantageous because it allows a liquefied gas container to be filled to a level above the second end of the body of the unit without the problem of dispensing liquefied gas.

Abstract: A process for recovering a first component and/or a second component from a multicomponent feed gas mixture containing the first component and the second component includes multiple steps. The first step is to pass the feed gas mixture through a membrane separation unit, thereby separating the feed gas mixture into a first stream enriched in the first component and a second stream lean in the first component. The second step is to cool the first stream. The third step is to expand the cooled first stream in a work extraction device, thereby generating a refrigeration supply for the process.

Abstract: An apparatus for delivering a gaseous product includes a horizontal container having inlet and outlet ports, an elongated hollow tube inside the container, a purifying medium inside the tube, inlet and outlet control means adapted to control delivery of the fluid to the inlet port and to control delivery of a gaseous product from the outlet port. The tube has a first opening, a second opening spaced apart from the first opening, and an internal axis between the first and second openings. The first opening is in fluid communication with the outlet port and the second opening is in fluid communication with a vapor space in the container. A portion of the internal axis adjacent the second opening is at an angle greater than zero degrees relative to the horizontal longitudinal axis of the container. Each of the inlet and outlet control means preferably are single ported valves.

Abstract: A fuel cell power system is provided that includes a fuel cell for generating electricity that has a cathode, an anode, and a polymer electrolyte membrane. The fuel cell processes air through the cathode to yield a cathode effluent stream. The fuel cell power system further includes a fuel processor for converting an inlet fuel stream of hydrogen and carbon containing fuels, utilizing a stream of oxygen containing gas and water vapor, to a processed fuel stream of hydrogen molecules for feeding into the fuel cell anode. The system then feeds a substantial portion of the cathode effluent stream to the fuel processor as the oxygen containing gas and water vapor for converting the fuel stream into hydrogen. A method of using the system is also provided.

Abstract: This invention relates to an improved process to produce metal imino/amino complexes having the formula R1N=M(NR2R3)3 where M is a pentavalent metal or (R1N=)2M′(NR2R3)2 where M′ is a hexavalent metal. In the process MX5 and two-equivalents of primary amine R1NH2 or metal hexahalide, M′X6 with seven-equivalents of primary amine H2NR1 are reacted in the presence of excess pyridine. The resulting reaction product R1N═MX3(py)2 or [(R1N)2M′X2(py)]2 then is followed by the addition of LiNR2R3. The process provides the final product in high yield and in high purity as well as representing a simplified procedure for synthesizing R1N═M(NR2 R3)3 or (R1N═)2M′(NR2R3)2type complexes.

Abstract: An HFBD purification process includes: (a) contacting a composition containing HFBD with an adsorbent to remove from the HFBD at least two impurities selected from the group consisting of water, an alcohol, hydrofluoric acid and a fluorinated olefin, wherein the adsorbent is a solid having an average pore diameter of about 5 Å and the adsorbent is contacted with the HFBD at a rate of at least 2.7 kg of the HFBD per hour; and (b) recovering from the adsorbent a purified HFBD product containing at least 99.9 vol. % HFBD, a reduced amount of the impurities and less than 0.1 vol. % hexafluoro-2-butyne. Alternatively, the process can be conducted at any contacting rate to produce 99.96 vol. % HFBD. The process can also be conducted at any contacting rate in a bed within a column having a length of at least 30 cm and an inner diameter of at least 2.5 cm.

Abstract: A process for deposition of a multiple metal and metalloid compound layer with a compositional gradient of the metal and metalloid in the layer on a substrate of an electronic material, comprising: a) providing two or more metal-ligand and metalloid-ligand complex precursors, wherein the ligands are preferably the same; b) delivering the precursors to a deposition zone where the substrate is located; c) contacting the substrate under deposition conditions with the precursors; d) varying the temperature of deposition from a first temperature to a second distinct temperature which is at least 40° C. from said first temperature during the contact, and e) depositing a multiple metal and metalloid compound layer on the substrate from the precursors resulting in the compositional gradient of the metal and metalloid in the layer as a result of step d).

Abstract: A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip is provided which includes the steps of adjusting the temperature of the chip using a reaction chamber to a temperature appropriate for the selection of a beta-diketone and the design of micromechanical and microelectronic devices, cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water, introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched, flowing the reactive mixture over the substrate until the sacrificial materials and metal contamination have been substantially removed, stopping the flow of the reactive mixture; and cycle purging the chamber to remove residual reactive mixture and any remaining reaction by-products.

Abstract: This invention relates to an improvement in a purification process for producing those liquid copper based complexes of &bgr;-diketones and, particularly the monovalent copper complexes of &bgr;-diketones, which are suited for application by chemical vapor deposition in the electronics industry. In the basic process for preparing a copper based complex, a reactive copper compound is reacted with a fluorinated &bgr;-diketonate and an organo source such as an olefinic source or one having acetylenic unsaturation. Purification is effected by contacting reaction product with a double deionized deoxygenated water source and preferably an acid/water source. An aqueous layer and an organic layer are formed with the aqueous layer containing byproducts and the organic phase containing product.

Abstract: A container for high purity chemicals having an externally placed level sensor to avoid contamination of such chemical and for ready serviceability and a removeable liquid out diptube to facilitate cleaning during refilling or refurbishing, both of which are situated adjacent a sump in the bottom of the container. The container can have a valved inlet and outlet and can be constructed of stainless steel which is electropolished.

Abstract: An improved method of processing a nonferrous metal and alloys of said metal using a blanketing gas having a global warming potential is provided. The improvement involves reducing the global warming potential of the blanketing gas by blanketing the nonferrous metal and alloys with a gaseous mixture including at least one compound selected from the group consisting of COF2, CF3COF, (CF3)2CO, F3COF, F2C(OF)2, SO2F2, NF3, SO2ClF, SOF2, SOF4, NOF, F2 and SF4.