Abstract: Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substrate includes a step of growing GaN crystal (4) by a vapor growth technique onto a growth substrate (1), the GaN-crystal-substrate manufacturing method being characterized in that in the step of growing the GaN crystal (4), pits (6) that define facet planes (5F) are formed in the crystal-growth surface, and being characterized by having the pit-size increase factor of the pits (6) be 20% or less.

Abstract: In 2D photonic crystals, cavities having a heightened Q factor are made available, wherein combining the high Q cavities with waveguides affords channel add/drop filters having high resolution. In a cavity constituted by a point defect within a 2D photonic crystal, the 2D photonic crystal is configured by an arrangement, in a two-dimensional lattice of points defined in a slab (1), of low-refractive-index substances (2) having a low refractive index relative to the slab (1) and being of identical dimension and shape. The point defect (4) contains a plurality of three or more lattice points that neighbor one another, and in these lattice points no low-refractive-index substances (2) are arranged; therein the dimension of the low-refractive-index substance (2) that should be arranged to correspond to at least one of the lattice points nearest the point defect (4) is dimensionally altered from a predetermined dimension.

Abstract: In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, warp will be a large ±40 ?m to ±100 ?m. Since with that warp device fabrication by photolithography is challenging, reducing the warp to +30 ?m to ?20 ?m is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the warp. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the warp.

Abstract: Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered stoichiometric, and microscopic roughness on the surface following epitaxial growth is reduced. The methods include preparing a substrate made of a Group III-V semiconductor compound (S10), and cleaning the substrate with a cleaning solution whose pH has been adjusted to an acidity of 2 to 6.3 inclusive, and to which an oxidizing agent has been added (S20).

Abstract: Affords high-stability, high-safety lithium secondary batteries of high energy density and superlative charge/discharge cyclability, in which shorting due to the growth of dendrites from the metallic-lithium negative electrode is kept under control. A lithium secondary battery negative-electrode component material, formed by laminating onto a substrate a metallic lithium film and an inorganic solid-electrolyte film, the lithium secondary battery negative-electrode component material characterized in that the inorganic solid-electrolyte film incorporates lithium, phosphorous, sulfur, and oxygen, and is represented by the compositional formula noted below. aLi·bP·cS·dO (Li: lithium; P: phosphorous; S: sulfur; O: oxygen), wherein the ranges of the atomic fractions in the composition are: 0.20?a?0.45; 0.10?b?0.20; 0.35?c?0.60; 0.03?d?0.13; (a+b+c+d=1).

Abstract: Affords a holder for use in semiconductor or liquid-crystal manufacturing devices—as well as semiconductor or liquid-crystal manufacturing devices in which the holder is installed—in which temperature uniformity in the processed-object retaining face is heightened. Configuring the holder with, furnished atop a ceramic susceptor, a composite of a ceramic and a metal improves the temperature uniformity in the holder's processed-object retaining face and makes for curtailing the generation of particulates and other contaminants. In addition, putting a coating on at least the retaining face improves the durability of the holder. Installing a holder of this sort in a semiconductor manufacturing device or a liquid-crystal manufacturing device contributes to making available semiconductor or liquid-crystal manufacturing devices whose productivity and throughput are excellent.

Abstract: In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 ?m to ±100 ?m. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 ?m to ?20 ?m is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow.

Abstract: A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).

Abstract: Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.

Abstract: A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.

Abstract: A tiny-diameter, lengthwise extensive impeller utilized in an ultra-small centrifugal fan is molded by an injection molding operation. In order to avert difficulties attendant on injection-molding ultra-miniature parts, the thickness and length of a reinforcing ring on the tip of the impeller are set to within predetermined ranges. Further, the thickness of each of the vanes that constitute the impeller is made maximum where they join to the impeller ring section.

Abstract: In an axial fan, a case (40) accommodating the fan motor stator (50) is anchored into a bearing retainer (10), in which ball bearings (20, 21) as a bearing unit are accommodated, along a bulge part (13) formed on the lower end portion thereof. The case (40) extends heading axially downward, wherein there is no diametrical overlap between the ball bearings (20, 21) and the stator (50). Since only the bulge part (13) of the bearing retainer (10) is fixed to the case (40), heat arising from the stator (50) is thermally conveyed via the case (40) only to the bulge part (13). The fact that the thermal conveyance zone is minimal enables unrestrained curtailment of heat transmitted to the ball bearings (20, 21). As a result the axial fan can be designed for prolonged bearing lifespan.

Abstract: Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 1017 cm?3 or more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

Abstract: Microwave hyperthermia treatment device includes a microwave generation unit, a power supply unit, and a control unit including an exposure-time actuation timer, an intermittent actuation timer, a second-device connecting terminal, and a remote switch. Two microwave hyperthermia treatment devices are connected with each other via the second terminal connecting terminals for simultaneous use flanking the torso along either side of an affected area, whereby superposed strong microwaves are irradiated. The temperature of tumor(s) in the affected area can thereby be brought to about 43° C. in about 1 minute, rendering lengthy treatment periods unnecessary and thus alleviating temperature stress on the patient. Two remote-control switches to the control unit can be provided, one of which may be given to a patient for use as an emergency stop switch, eliminating the necessity of having to insert a temperature sensor in the body, which also alleviates the burden on the patient.

Abstract: AlGaInN single-crystal wafer with alleviated cracking and improved utilization rate and cost effectiveness. A hexagonal AlxGayIn1?(x+y)N(0<x?1, 0?y<1, x+y?1) single-crystal wafer, characterized in that the wafer has a thickness T(cm) and a principal face with a surface area S(cm2), the area S and thickness T satisfying the conditions S?10 cm2 and 0.006S?T?0.002S.

Abstract: In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, warp will be a large ±40 ?m to ±100 ?m. Since with that warp device fabrication by photolithography is challenging, reducing the warp to +30 ?m to ?20 ?m is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the warp. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the warp.

Abstract: A diamond-like carbon (DLC) film having refractive indices distributed in a pattern oriented within the plane of the film or on a bias with respect to the thickness of the film. Such films may be useful in low-cast Faraday rotators, in polarizers (analyzers), and in magnetic substances, and in Faraday rotators and optical isolators that can handle a plurality of wavelengths. The refractive index structure may be imparted to the DLC film, for example, by irradiating at least one region of the film with either a particle or energy beam.

Abstract: An insulator covering the teeth (31) of an armature (3) in an inner-rotor motor is composed of a tooth insulator (321), outer-side insulator (322), upper-end insulator (323), and lower-end insulator (324). The tooth insulator (321) is composed of substantially annular top and bottom members that are assembled from above and below to the teeth (31).

Abstract: A measurement-facilitating method of measuring the breakdown voltage of a semiconductor epitaxial wafer, and a semiconductor epitaxial wafer whose breakdown voltage is superior are realized. In a method of measuring the breakdown voltage of a semiconductor epitaxial wafer having to do with the present invention, the breakdown voltage between contacts 14 and 18 is measured only through the Schottky contacts, without need for ohmic contacts. Inasmuch as the manufacturing process of forming ohmic contacts is accordingly omitted, the semiconductor epitaxial wafer 10 may be readily used in a breakdown-voltage measurement test. The measurement of the wafer-10 breakdown voltage thus may be readily carried out. Likewise, because the inter-contact breakdown voltage V2 of a wafer 10 can be measured prior to manufacturing a working device from it, unsuitable wafers 10 can be excluded before they are cycled through the working-device fabrication process.

Abstract: In a semiconductor heat-dissipating substrate made of a Cu—W alloy whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 ?m or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 ?m or less, thermal conductivity of 210 W/m·K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.