Abstract: Affords efficiently and at low cost optical fibers capped at the end with a working, tiny optically diffractive film. An optical fiber includes a diffractive film formed onto an endface thereof, or onto the endface of a collimator joined to the endface of the fiber; the diffractive film includes a transparent DLC (diamond-like carbon) layer; and the DLC layer includes a modulated-refractive-index diffraction grating containing local regions of relatively high refractive index and local regions of relatively low refractive index.

Abstract: Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device (1) is furnished with an n-type cladding layer (3), a p-type cladding layer (7) provided over the n-type cladding layer (3), and an active layer (5) composed of a nitride and provided in between the n-type cladding layer (3) and the p-type cladding layer (7), and therein is characterized in that the angle formed by an axis orthogonal to the interface between the n-type cladding layer (3) and the active layer (5), and the c-axis in the active layer (5), and the angle formed by an axis orthogonal to the interface between the active layer (5) and the p-type cladding layer (7), and the c-axis in the active layer (5), are each greater than zero.

Abstract: The Q factor and electric field pattern (radiation pattern) for a cavity made from a donor-type point defect 4 as is illustrated in FIG. 1 were simulated by the FDTD method. The simulation parameters were configured by selecting silicon for the slab 1; and setting approximately 1.55 ?m, which is generally used in optical communications, for the wavelength ?; 0.42 ?m for the lattice constant a; 0.6a for the slab 1 thickness; and 0.29a for the predetermined sectional radius of the through-holes 2.

Abstract: Operational administration system enabling reduction in expense burden on user, and permitting manufacturer to comprehend accurately and timely operational status of machine tools on user end. Operational administration system (1) includes, interconnected via Internet (5): manufacturer-end administration device (20); operational data storage/transmission devices (10) connected to numerical controllers for NC machine tools (15); and user-end terminal device (30). The operational data storage/transmission devices (10) gather from the numerical controllers data pertaining to the operational status of the NC machine tools (15), store the data and, when specified transmission conditions are met, send the stored operational status data to administration device (20) in an e-mail data format.

Abstract: Temperature gauge, and ceramic susceptors and semiconductor manufacturing equipment utilizing the temperature gauge, in which the thermocouple may be easily replaced even if damaged, and in which heat from the temperature-gauging site is readily transmitted to the temperature-gauging contact, shortening time until the measurement temperature stabilizes. A temperature-gauging contact (12) in the tip of the thermocouple contacts, in an exposed-as-it-is state, a temperature-gauging site on a ceramic susceptor (1), and by means of a circular cylindrical-shaped retaining member (11) screwed into female threads in the ceramic susceptor (1) is detachably pressed upon and retained against the ceramic susceptor. Thermocouple lead lines (13), passing through a through-hole (14) in the retaining member (11), stretch from one end face to the other end face thereof. The retaining member may be provided with a flange having threaded holes and screwlocked into female screws in the ceramic susceptor.

Abstract: Joint formations that, in joining together joining members employed in a variety of electrical and electronic components, yield sufficiently high joint strength in the direction perpendicular to the plane in which two joining members join, and meanwhile in the direction parallel to the joint plane. First and second joining members have respective joint phases each formed with a different number of distinct yet continuous conformational faces, defining the joint phases so that neither is the matching complement of the other. A bonding agent interposed between the joint phases joins the joining members together. The difference in thermal expansion coefficient between the two joining members, and between them and the bonding agent, is 5.0×10?6/° C. or less. The joining members are a metal such as tungsten or Cu—W, or a ceramic such as AlN or Si3N4; and glass or a solder material is utilized for the bonding agent.

Abstract: Compound-semiconductor-wafer manufacturing whereby particle adherence, and obverse-surface oxidization and alteration are slight and the use of organic solvents is reduced. An adsorption pad is bonded to a polishing plate, and a wafer being adsorbed onto the adsorption pad without using wax is polished and thereafter stored within purified water without drying. Since storage is within purified water, particle adherence, and obverse-surface oxidization and alteration turn out to be slight, yielding a high-quality wafer. In the cleaning procedure following the aquatic storage, organic solvent washing is omitted. This allows the use/waste volume of noxious organic solvent to be reduced.

Abstract: The channel add/drop filter includes first and second 2D photonic crystals, and the first 2D photonic crystal includes a first waveguide and a first cavity, with the first cavity acting to take in light of a specific wavelength from the first waveguide and radiate it outside the first photonic crystal, and the second 2D photonic crystal includes a second waveguide with substantially the same characteristics as the first waveguide and a second cavity with substantially the same characteristics as the first cavity. The first and second waveguides are optically connected so that when the principal plane of the first 2D photonic crystal and the electric-field vector of the light within the first waveguide torn, an arbitrary angle ?, the principal plane of the second 2D photonic crystal and the electric-field vector of the light within the second waveguide form an angle of ?+(?/2).

Abstract: Method for non-invasively profiling carrier concentration in In-containing compound semiconductor wafers that enables employing the profiled wafers themselves in semiconductor device applications. The method, which using the C/V technique profiles carrier concentration in wafers including an In-containing-compound semiconductor surface layer, is characterized in non-invasively profiling carrier concentration by contacting a liquid electrode on the wafer surface, and without using photo-etching, employing an applied voltage that is up to a voltage surpassing 10V.