Abstract: A method for forming a protective jacket over a connection region includes connecting the leads of an electronic device to conductors such that the connections are in a connection region, placing the connection region in a mold, injecting molten protective material into the mold to cover the connection region, allowing the molten material to cool and harden and removing the connection area from the mold.

Abstract: A voltage regulator comprises first and second bipolar transistors operating at different current densities; a resistance is connected between their bases across which ?VBE appears. A third bipolar transistor is connected such that its base voltage is equal to that of the first transistor or differs by a PTAT amount. A current mirror balances the collector current of one of the second and third transistors with an image of the collector current of the first transistor when an output node is at a unique operating point. The operating point includes both PTAT and CTAT components, the ratio of which can be established to provide a desired temperature characteristic. A feedback transistor provides current to the bases of the bipolar transistors and to the output node and is driven by the current mirror output to regulate the voltage at the output node by negative feedback.

Abstract: Temperature-compensation network embodiments are provided to generate compensation signals which may be useful in improving the performance of a variety of important systems. An embodiment includes a limit current mirror configured to provide a limit current, a current generator to provide a slope current whose magnitude varies with temperature, and an output current mirror positioned to receive the limit current and the slope current and configured to provide a compensation current. In addition, a floating voltage reference is provided for use in various networks which include the temperature-compensation networks. The temperature-compensation networks may be used to improve performance in systems such as a panel driver which provides turn-on and turn-off gate voltages to transistors in liquid crystal displays.

Abstract: Electrochemical devices, methods, and systems for detecting and quantifying analytes are disclosed. A chemical detection reagent is locally generated in a test solution by electrochemical reaction of a precursor compound caused to migrate into the test solution from a precursor solution separated from the test solution by a cell separator. This approach provides precise metering of the reagent, via the charge passed, and avoids the need to store a reagent solution that may be chemically unstable. In one embodiment, the starch concentration in a colloidal solution can be measured via spectroscopic detection of a blue complex formed by the interaction of starch with iodine produced, on demand, by electrochemical oxidation of iodide ion. The approach may also be used to characterize certain types of analytes. The invention is amenable to automation and is particularly useful for on-line monitoring of production processes, including the inclusion of feed back loop mechanisms for process control.

Abstract: A mechanically stable diffusion barrier stack structure and method of fabricating the same is disclosed. The diffusion barrier stack structure having a molybdenum nitride layer deposited on a molybdenum layer and operates to prevent diffusion between a semiconductor layer and a metal interconnect. The method for fabricating includes depositing a molybdenum layer outwardly from the semiconductor layer in a deposition chamber, and depositing a molybdenum nitride layer outwardly from the molybdenum layer in the deposition chamber.

Abstract: A spa speaker apparatus having a housing with a speaker mounted therein, wherein the speaker can be extended and retracted with respect to the housing and the speaker is also rotatable within the housing. A system for providing audio to a spa is also disclosed. The system comprises a spa having walls and at least one speaker unit mounted to a spa wall. Each of the speaker units is capable of receiving an audio signal, and generating sound towards the occupants of the spa. Each of the speaker units comprises a speaker that is individually retractable to be hidden behind the spa wall and extendible from the spa wall. Each of the speakers is also rotatable within the spa wall to direct the speaker sound.

Abstract: A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers.

Abstract: A scalable highest available voltage selector circuit determines the highest of n input voltages and connects the highest voltage to an output. The circuit has at least n circuit branches, each of which comprises n?1 “comparator” FETs connected between an input voltage and an output node, and a diode-connected FET connected between the output node and a current source. The junction of the diode-connected transistor and current source provides a control signal used by the other branches. Each of a branch's comparator FETs have their gates connected to a respective one of the other branches' control signals, such that they are driven on regeneratively when the applied input voltage is the highest of the n input voltages. Each branch also includes n?1 “shorting” FETs connected across the diode-connected transistor, arranged to be driven off when the applied input voltage is the highest, but which are otherwise driven on.

Abstract: A single integrator sensorless current mode control scheme for a switching power converter requires an amplifier circuit which produces an first current that varies with the difference Verror between a reference voltage and a voltage that varies proportionally with Vout, a circuit which produces a second current that varies with the voltage VL across the output inductor, a single integrating element connected to receive the first and second currents such that it integrates both Verror and VL, and a comparator which receives the integrated output at its first input and a substantially fixed voltage at its second input and produces an output that toggles when the voltage at its first input increases above and falls below the substantially fixed voltage. The comparator output is used to control the operation of the power converter's switching circuit and thereby regulate the output voltage.

Abstract: An artificial firelog according to the present invention may comprise as constituents a combustible cellulosic or fiber material, a non-absorbent combustible oil- and/or fat-retaining material, and a combustible binder/fuel or wax in appropriate proportions. A combustible binding agent may be also be added as an additional constituent material to allow a further reduction of the combustible wax component. Certain naturally occurring agricultural by products and synthetic filter materials contain oils and/or fats that provide increased BTU value beyond the cellulosic or mineral components of the material. When these oil- and/or fat-retaining materials added to a blend of firelog material, the non-absorbent properties and additional BTU content of these alternative raw materials allow the amount of higher BTU wax material to be reduced without a dramatic reduction in fuel content in the finished mixture.

Abstract: A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band to the valence band of the junction encourages tunneling across the junction. The tunneling is encouraged, because the dipole space charge bends the energy bands, and shortens a tunnel junction width charge carriers must traverse to tunnel across the junction. Placing impurities within or near the tunnel junction that may form deep states in the junction may also encourage tunneling in a tunnel junction. These states shorten the distance charge carriers must traverse across the tunnel junction.

Abstract: A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer is formed above the active layer and a conductive field plate formed above the spacer layer, extending a distance Lf from the edge of the gate contact toward the drain contact. The field plate is electrically connected to the gate contact and provides a reduction in the peak operational electric field.

Abstract: An LED package containing integrated circuitry for matching a power source voltage to the LED operating voltage, LEDs containing such integrated circuitry, systems containing such packages, and methods for matching the source and operating voltages are described. The integrated circuitry typically contains a power converter and a constant current circuit. The LED package may also contain other active or passive components such as pin-outs for integrated or external components, a transformer and rectifier, or a rectifier circuit. External components can include control systems for regulating the LED current level or the properties of light emitted by the LED. Integrating the power supply and current control components into the LED can provide for fabrication of relatively small LEDs using fewer and less device-specific components.

Abstract: Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of LEDs so that at least some light from the covered LEDs passes through the single crystalline phosphor and is converted. The LED chips can then be singulated from the wafer to provide LED chips each having a portion of said single crystalline phosphor to convert LED light.

Abstract: An apparatus suitable for cleaning a surgically prepared working surface comprises a body portion adapted to supply pressurized fluid (preferably carbon dioxide gas) to the surgically prepared working surface and aspirate surface debris dislodged from the surgically prepared working surface. The apparatus further comprises a head portion adapted to constrain the supplied pressurized fluid to flow substantially along the surgically prepared working surface to dislodge debris there from when the head portion is in contact with the surgically prepared working surface. The dislodged surface debris are aspirated by the body portion. A second embodiment includes a Venturi-assisted cleaning head and is operable with or without an external source of vacuum.

Abstract: A light emitting diode is disclosed that includes a growth substrate, a substantially transparent ohmic contact on a first surface of the growth substrate, a Group III nitride, light-emitting active region on a second surface of the growth substrate, a p-type Group III nitride contact layer on the active region that transmits light generated in the active region, and a substantially transparent ohmic contact on the p-type contact layer.