Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 ?m width (e.g., less than about 50 ?m width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

Abstract: In various embodiments, bilayers are formed in electronic devices at least in part by anodization of metal-alloy base layers.

Abstract: Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.

Abstract: In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.

Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

Abstract: In various embodiments, metallic wires are fabricated by combining one or more powders of substantially spherical metal particles with one or more powders of non-spherical particles within one or more optional metallic tubes. The metal elements within the powders (and the one or more tubes, if present) collectively define a high entropy alloy of five or more metallic elements or a multi-principal element alloy of four or more metallic elements.

Abstract: In various embodiments, metallic alloy powders are utilized as feedstock, or to fabricate feedstock, utilized in additive manufacturing processes to form three-dimensional metallic parts. Such three-dimensional parts are fabricated by providing a powder bed containing particles each comprising a mixture and/or alloy of constituent elemental metals, forming a first layer of the part by (i) dispersing a binder into the powder bed, and (ii) curing the binder, the first layer of the shaped part comprising particles bound together by cured binder, disposing a layer of the particles over the first layer of the part, forming subsequent layers of the part, and then sintering the part.

Abstract: In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

Abstract: In various embodiments, a microreactor features a corrosion-resistant microchannel network encased within a thermally conductive matrix material that may define therewithin one or more hollow heat-exchange conduits.

Abstract: In various embodiments, an electrothermal propulsion system for imparting velocity to a spacecraft features a joint-free monolithic integrated thruster component including an inlet section, a resistively heated heat-exchanger section, and a nozzle section.

Abstract: In various embodiments, additive manufacturing is utilized to fabricate three-dimensional metallic parts using metallic alloy wire as a feedstock material.

Abstract: In various embodiments, apparatuses for receiving and supporting one or more components during processing thereof at process temperatures greater than approximately 1000° C. feature refractory metal shelves separated by refractory metal support posts.

Abstract: In various embodiments, apparatuses for receiving and supporting one or more components during processing thereof at process temperatures greater than approximately 1000° C. feature refractory metal shelves separated by refractory metal support posts.

Abstract: A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

Abstract: A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through, thickness gradient, banding severity; and variation across the plate, for each of the texture components 100//ND and 111//ND, which is substantially uniform throughout the plate.

Abstract: In various embodiments, three-dimensional layered metallic parts are substantially free of gaps between successive layers, are substantially free of cracks, and have densities no less than 97% of the theoretical density of the metallic material.

Abstract: In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer.

Abstract: In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

Abstract: In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb—Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

Abstract: In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.