Abstract: In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures (20) comprising shafts (2) with different functionality and dimensions can be inserted in a modular way. That way, out-of-plane connectivity, mechanical clamping between the microstructures (20) and a substrate (1) of the device, and electrical connection between electrodes (5) on the microstructures (20) and the substrate (1) can be realized. Connections to external circuitry can be realised. Microfluidic channels (10) in the microstructures (20) can be connected to external equipment. A method to fabricate and assemble the device is provided.

Abstract: The present disclosure relates to the field of organic optoelectronics. More particularly, the present disclosure relates to photovoltaic structures and to methods to produce the same. One aspect of the disclosure is a photovoltaic structure comprising: an electron acceptor material, and an electron donor material, wherein the electron donor material comprises: a host material, and a guest material, wherein the energy of the lowest excited singlet state of the guest is smaller than the energy of lowest excited singlet state of the host, wherein the fluorescence emission spectrum of the host overlaps with at least part of the absorption spectrum of the guest and wherein the energy of the lowest excited triplet state of the guest is larger than the energy of the lowest excited triplet state of the host.

Abstract: A method for the production of a photovoltaic device, for instance a solar cell, is disclosed. In one aspect, the method comprises providing a substrate having a front main surface and a rear surface. The method further comprises depositing a dielectric layer on the rear surface, wherein the dielectric layer has a thickness larger than about 100 nm. The method further comprises depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer and forming back contacts through the dielectric layer and the passivation layer. In another aspect, corresponding photovoltaic devices, for instance solar cell devices, are also disclosed.

Abstract: Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the use of a complex symmetrical structure. In the example device, programming is accomplished by tunneling negative charge carriers from a charge supply region to a charge storage region. Further in the example device, erasing is accomplished by tunneling positive carriers from the charge supply region to the charge storage region. In a second example non-volatile memory device, a charge storage region with spatially distributed charge storage region is included. Such a charge storage region may be implemented in the first example memory device or may be implemented in other memory devices. In the second example device, programming is accomplished by tunneling negative charge carriers from a charge supply region to the charge storage region.

Abstract: A technique is described for the preparation of polymers according to a process in which the starting compound of formula (I) is polymerized in the presence of a base in an organic solvent. No end chain controlling agents are required during the polymerisation to obtain soluble precursor polymers. The precursor polymer such obtained comprises structural units of the formula (II). In a next step, the precursor polymer (II) is subjected to a conversion reaction towards a soluble or insoluble conjugated polymer by thermal treatment. The arylene or heteroarylene polymer comprises structural units of the formula III. In this process the dithiocarbamate group acts as a leaving group and permits the formation of a precursor polymer of structural formula (II), which has an average molecular weight from 5000 to 1000000 Dalton and is soluble in common organic solvents. The precursor polymer with structural units of formula (II) is thermally converted to the conjugated polymer with structural formula (III).

Abstract: Systems and methods for controlling a micro electromechanical device using power actuation are disclosed. The disclosed micro electromechanical systems comprise at least one electrostatically actuatable micro electromechanical device and an actuation device. The micro electromechanical device comprises a first conductor and a second conductor having a moveable portion which in use may be attracted by the first conductor as a result of a predetermined actuation power. The actuation device comprises a high frequency signal generator for generating at least part of the actuation power by means of a predetermined high frequency signal with a frequency higher than the mechanical resonance frequency of the moveable portion of the micro electromechanical device.

Abstract: The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related to a method for polishing copper integrated with tungsten containing barrier layers by means of an aqueous solution containing abrasive particles, an inorganic acid such as HNO3 as etchant for copper that prevents galvanic corrosion of the tungsten containing metal barrier and at least one organic compound to provide sufficient copper corrosion inhibition.

Abstract: A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises providing a substantially planar layer having a first metal layer, depositing a via level dielectric layer, patterning the via level dielectric layer, at least partly etching the via level dielectric layer, depositing a disposable layer on the at least partly etched via level dielectric layer, patterning the disposable layer, depositing a second metal layer, planarizing second metal layer, depositing permeable dielectric layer after planarizing the second metal layer, and removing the disposable layer through the permeable dielectric layer to form air gaps.

Abstract: One inventive aspect relates to a reconfigurable cavity resonator. The resonator comprises a cavity delimited by metallic walls. The resonator further comprises a coupling device for coupling an electromagnetic wave into the cavity. The resonator further comprises a tuning element for tuning a resonance frequency at which the electromagnetic wave resonates in the cavity. The tuning element comprises one or more movable micro-electromechanical elements with an associated actuation element located in their vicinity for actuating each of them between an up state and a down state. The movable micro-electromechanical elements at least partially have a conductive surface and are mounted within the cavity.

Abstract: Interdigitated electrode arrays are very promising devices for multi-parameter (bio)sensing, for example the label-free detection of nucleic acid hybridisation for diagnostic applications. The current disclosure provides an innovative method for the affordable manufacturing of polymer-based arrays of interdigitated electrodes with ?m-dimensions. The method is based on a combination of an appropriate three-dimensional structure and a single and directional deposition of conductive material. The three-dimensional structure can be realized in a polymer material using a moulding step, for which the moulds are manufactured by electroplating as a reverse copy of a silicon master structure. In order to ensure sufficient electrical isolation and individual, but convenient, accessibility of the sensors in the array, the interdigitated electrode regions need to be complemented with specific features on the three-dimensional structure. Combined with the use of e.g.

Abstract: The present invention is related to an analogue-to-digital (A/D) converter comprising at least two voltage comparator devices. Each of the voltage comparator devices is arranged for being fed with a same input signal and for generating an own internal voltage reference. The two internal voltage references are different. Each voltage comparator is arranged for generating an output signal indicative of a bit position of a digital approximation of said input signal.

Abstract: The present invention relates to a large time constant steering circuit for slowly changing a voltage on a node between at least two discrete voltage levels. The present invention further relates to a slow steering current DAC comprising said large time constant steering circuit. The present invention further relates to an instrumentation amplifier device comprising a current balancing instrumentation amplifier for amplifying an input signal to an amplified output signal and a DC servo-loop for removing a DC-component from the input signal. The present invention further relates to an EEG acquisition ASIC comprising said instrumentation amplifier device.

Abstract: One embodiment of the invention comprises a first semiconductor structure in electrical contact with a first contact region, a second semiconductor structure in electrical contact with a second contact region, the first semiconductor structure and the second semiconductor structure being in electrical contact with each-other along an interface, a modulating section configured to modulate the conductivity in at least one of the semiconductor structures, so that the conductivity varies along the interface, in such a way that if current flows across the interface, the current can flow only at a predetermined position along the interface, and substantially no current can flow at either side of the predetermined position.

Abstract: A method and apparatus for transforming a description of an encoded bit stream is described. The encoded bit stream comprises data packets and the description is written in a markup language such as BSDL. A group of one or more data packets is described in the description by an element, the element having at least one attribute containing a transformation tag. The description is scanned to check for a transformation tag in accordance with a predetermined condition and an adapted description is generated. The transformation of multimedia files is described to provide for content scalability. The adaptation approach works as follows: instead of directly adapting the bit stream, the description of the bit stream is modified, by use of so-called style sheets. Therefore, from the modified description a binary form file can be generated.

Abstract: The present invention is related to a method for singulating chips from a stack of layers, such as the layers on a wafer or substrate. The stack of layers includes a front end of line (FEOL) layer upon the substrate layer, with the substrate layer having a first surface and a second surface. The FEOL is positioned on top of the first surface, and a back end of line (BEOL) layer is positioned on top of the FEOL. The method includes etching singulating trenches through the BEOL, through the FEOL and at least partially through the substrate layer, depositing a passivation layer on the stack provided with singulating trenches, whereby the sidewalls of the etched singulating trenches are at least partially passivated. Dicing, such as blade dicing, laser dicing or trench etch dicing is performed, releasing the chip from the stack of layers.

Abstract: A platform supporting reconfigurable computing, enabling the introduction of reconfigurable hardware into portable devices is described. Dynamic hardware/software multitasking methods for a reconfigurable computing platform including reconfigurable hardware devices such as gate arrays, especially FPGA's, and software, such as dedicated hardware/software operating systems and middleware, adapted for supporting the methods, especially multitasking, are described. A computing platform, which is a heterogeneous multi-processor platform, containing one or more instruction set processors (ISP) and a reconfigurable matrix (for instance a gate array, especially an FPGA), adapted for (dynamic) hardware/software multitasking is described.

Abstract: A technique is described for the preparation of polymers according to a process in which the starting compound of formula (I) is polymerized in the presence of a base in an organic solvent. No end chain controlling agents are required during the polymerisation to obtain soluble precursor polymers. The precursor polymer such obtained comprises structural units of the formula (II). In a next step, the precursor polymer (II) is subjected to a conversion reaction towards a soluble or insoluble conjugated polymer by thermal treatment. The arylene or heteroarylene polymer comprises structural units of the formula III. In this process the dithiocarbamate group acts as a leaving group and permits the formation of a precursor polymer of structural formula (II), which has an average molecular weight from 5000 to 1000000 Dalton and is soluble in common organic solvents. The precursor polymer with structural units of formula (II) is thermally converted to the conjugated polymer with structural formula (III).

Abstract: A method for trimming an effective refractive index of optical waveguiding structures made for example in a high refractive index contrast material system. By compaction of cladding material in a compaction area next to patterns or ridges that are formed in the core material for realizing an optical waveguiding structure, the effective index of refraction of the optical waveguiding structure can be trimmed. Thus, the operating wavelength of an optical component comprising such an optical waveguiding structure can be trimmed. An optical waveguide structure thus obtained is also disclosed.

Abstract: A method for manufacturing a non-volatile memory device is described. The method comprises growing a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored. A non-volatile memory device is also described. In the non-volatile memory device, the interpoly/blocking dielectric comprises a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored, the siliconoxide consuming material having consumed at least part of the upper layer.

Abstract: Methods, apparatus and software products are described for design-time data-assignment techniques for hierarchical memories, e.g., multi-banked memories in an essentially digital system as well as methods, apparatus and software products for run-time memory management techniques of such a system. Memory assignment techniques are described for assigning data to a hierarchical memory particularly for multi-tasked applications where data of dynamically created/deleted tasks is allocated at run-time. The energy consumption of hierarchical memories such as multi-banked memories depends largely on how data is assigned to the memory banks. Methods, apparatus and software products are described for design-time data-assignment techniques for hierarchical memories, e.g., multi-banked memories in an essentially digital system which improve a cost function such as energy consumption.