Abstract: The present invention discloses an analogue-to-digital converter comprising at least two voltage comparator devices. Each of the voltage comparator devices comprises a differential structure of transistors and is arranged for being fed with a same input signal and for generating an own internal voltage reference by means of an imbalance in the differential structure, said two internal voltage references being different. Each voltage comparator is arranged for generating an output signal indicative of a bit position of a digital approximation of the input signal.

Abstract: A new MOSFET device is described comprising a metal gate electrode, a gate dielectric and an interfacial layer. The interfacial layer comprises a lanthanum hafnium oxide material for modulating the effective work function of the metal gate. The gate dielectric material in contact with the interfacial layer is different that the interfacial layer material. A method for its manufacture is also provided and its applications.

Abstract: A method is provided for modifying a poly(arylene vinylene) or poly(heteroarylene vinylene) precursor polymer having dithiocarbamate moieties by reacting it with an acid and further optionally reacting the acid-modified polymer with a nucleophilic agent. Also provided are novel polymers and copolymers bearing nucleophilic side groups which are useful as components of electronic devices, e.g. in the form of thin layers.

Abstract: A method is provided for modifying a poly(arylene vinylene) or poly(heteroarylene vinylene) precursor polymer having dithiocarbamate moieties by reacting it with an acid and further optionally reacting the acid-modified polymer with a nucleophillic agent. Also provided are novel polymers and copolymers bearing nucleophillic side groups which are useful as components of electronic devices, e.g. in the form of thin layers.

Abstract: The present disclosure relates to a method for calibrating transient behaviour of an electrostatic discharge (ESD) test system. The system includes an ESD pulse generator and probe needles for applying a predetermined pulse on a device under test. The probe needles are connected to the ESD pulse generator via conductors. The test system includes measurement equipment for detecting transient behaviour of the device under test by simultaneously capturing voltage and current waveforms the device as a result of the pulse. The method comprises the steps of: (a) applying the ESD test system on a first known system with a first known impedance, (b) applying the ESD test system on a second known system with a known second impedance, and (c) determining calibration data for the transient behaviour the ESD test system on the basis of captured voltage and current waveforms, taking into account said known first and second impedances.

Abstract: In one aspect of the invention, a method or apparatus is described for determining concentration(s) of one or more analytes in a sample using plasmonic excitations. In another aspect, a method relates to designing systems for such concentration determination, wherein metallic nanostructures are used in combination with local electrical detection of such plasmon resonances via a semiconducting photodetector. In certain aspects, the method exploits the coupling of said metallic nanostructure(s) to a semiconducting photodetector, said detector being placed in the “metallic structure's” near field. Surface plasmon excitation can be transduced efficiently into an electrical signal through absorption of light that is evanescently coupled or scattered in a semiconductor volume. This local detection technique allows the construction of sensitive nanoscale bioprobes and arrays thereof.

Abstract: The current invention provides a stepping actuator, achieving large range up to ±35 ?m with low operating voltages of 15V or lower and large output forces of up to ±110 ?N. The actuator has an in-plane-angular deflection conversion which allows achieving step sizes varying from few nanometers to few micrometers with a minor change in the design. According to certain embodiments of the invention, the stepping actuator comprises a geometrical structure with a displacement magnification ratio of between 0.15 and 2 at operating voltages of 15V or lower. The present invention also provides a method for forming such stepping actuators.

Abstract: The present disclosure relates to a system comprising at least a first and a second essentially analogue portion and an essentially digital portion, the analogue portions forming a part of a unidirectional circular network. First communication means is provided between the digital portion and the first analogue portion. Second communication means is provided between the first and second analogue portions. The first and second communication means are configurable for establishing communication between the digital portion and the second analogue portion. The first and second communication means are arranged to determine if a packet communicated over the first or second communication means is of interest for any of the analogue portions.

Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Abstract: The present disclosure is related to an interface device for providing access to a network to be monitored. The interface device includes a plurality of elements, the elements being sensors and/or actuators. A selection means is provided for selecting a subset of elements among the plurality of elements, each element of the subset being arranged for outputting and/or receiving a signal. A local memory is provided for storing the subset.

Abstract: The invention relates to an N-bit digital-to-analogue converter (DAC) system, comprising—a DAC unit comprising an N-bit master DAC and a slave DAC, yielding a master DAC unit output signal and a slave DAC unit output signal, respectively, said N-bit master DAC having an output step size,—an adder unit combining the master DAC unit output signal and the slave DAC unit output signal, and—a means for storing correction values for at least the master DAC, said correction values being used by the slave DAC, whereby the DAC system is arranged for master DAC output corrections with a size in absolute value higher than half of the output step size.

Abstract: Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and negligible work function shifts with dopants on SiO2. Formation of Ni3Si2 can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.

Abstract: An electrical device comprises analog conversion circuitry having an input and an output. The electrical device is essentially provided for converting a first input signal within a first frequency range applied to the input to a first output signal within a second frequency range different from the first frequency range at the output. The electrical device further comprises a signal adding means for adding at least a portion of the first output signal as second input signal to the first input signal. The analog conversion circuitry is also capable of converting the second input signal, which is within the second frequency range, back to the first frequency range. Additionally, a characteristic deriving means is provided for deriving at least one characteristic of the electrical device from the frequency converted second input signal, which appears at the output of the analog conversion circuitry.

Abstract: The present invention provides an electronic device for sensing and/or actuating, the electronic device comprising at least one microneedle (10) on a substrate (1), each of the microneedles (10) comprising at least one channel (7, 8) surrounded by an insulating layer (6). The present invention also provides a method for making such an electronic device for sensing and/or actuating.

Abstract: A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber.

Abstract: The present invention relates to methods for producing a patterned thin film on a substrate. The method comprises the spatially and possibly also temporally modulation of nucleation modes of film growth during the growth of patterned thin films. The nucleation modes are modulated between no or substantially no nucleation, 2D nucleation, and 3D nucleation. The modulation is obtained by adjusting the surface treatment spatially applied over regions of the substrate, the growth conditions for the thin film materials used, and/or the specific thin film materials used. The growth conditions typically comprise the substrate temperature and the deposition flux. The modulation allows for spatially varying the interaction between the substrate material and the thin film materials deposited.

Abstract: The present disclosure provides a system for receiving signals over a power line distribution. Typically, problems of noise and interference are being solved at the receiver side. Systems of the present disclosure, however, are not limited to the receiver-side solution. Systems according to the present disclosure may also be used at the transmitter side. The receiver comprises a high pass filter, a preselect crossover filter, and an analog front-end receiver architecture.

Abstract: The present disclosure relates to methods for forming a gate stack in a MOSFET device and to MOSFET devices obtainable through such methods. In exemplary methods described herein, a rare-earth-containing layer is deposited on a layer of a silicon-containing dielectric material. Before these layers are annealed, a gate electrode material is deposited on the rare-earth-containing layer. Annealing is performed after the deposition of the gate electrode material, such that a rare earth silicate layer is formed.

Abstract: The invention relates to a method for creating transient cavitation comprising the steps of creating gas bubbles having a range of bubble sizes in a liquid, creating an acoustic field and subjecting the liquid to the acoustic field, characterized in that the range of bubble sizes and/or the characteristics of the acoustic field are selected to tune them to each other, thereby controlling transient cavitation in the selected range of bubble sizes. It also relates to an apparatus suitable for performing the method according to the invention.

Abstract: The present invention provides a driver circuit for driving a line terminated by a load, wherein said driver circuit is configurable for design time selected energy/delay working points. The configuration capability is used, e.g. during run-time, for dynamically selecting a suitable energy/delay working point, given the circumstances wherein said driver circuit has to operate. The driver circuit is in particular targeted for on-chip communication, but is not limited thereto.