Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

Abstract: A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the substrate travel direction, but is much narrower than the sputtering zone in the direction of substrate travel. Several narrow sputtering sources are installed so as to traverse the entire sputtering zone in all directions.

Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.

Abstract: The use of non-mass analyzed ion implanter is advantageous in such application as it generates ion implanting at different depth depending on the ions energy and mass. This allows for gaining advantage from lubricity offered as a result of the very light deposition on the surface, and at the same time the hardness provided by the intercalated ions implanted below it, providing benefits for cover glass, low E enhancement, and other similar materials. In further aspects, ion implantation is used to create other desirable film properties such anti-microbial and corrosion resistance.

Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

Abstract: An image intensifier and a method of fabrication are disclosed. The image intensifier contains a photocathode assembly (120) including a vacuum window to generate photoelectrons in response to light, a vacuum package (110) and an anode assembly (130) to receive the photoelectrons. The anode assembly is mounted to the vacuum package via a compliant, springy, support structure (160). The anode additionally includes one or more insulating spacers (140) on the surface facing the photocathode so as to precisely index the position of the anode assembly with respect to the photocathode surface. The photocathode and vacuum window assembly is pressed into the vacuum package to generate a sealed leak tight vacuum envelope. During the photocathode assembly to vacuum package assembly pressing operation, the inner surface of the photocathode assembly contacts the insulating spacer/spacers of the anode assembly, thereby compressing the compliant support structure.

Abstract: Disclosed is a substrate processing system with a magnetic conduit configuration to improve the movement of a substrate carrier within the system. The configuration specifically provides for safe, secure movement of a carrier between multiple levels of a substrate processing system by using magnetic conduits to redirect magnetic forces created by a linear motor, permitting the linear motor to be positioned outside of the system and in a location that will not interfere with the movement of the carrier.

Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

Abstract: A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction. A mask is used to form the implanted shapes on the wafer, wherein the holes in the mask are oriented orthogonally to the direction of beamlet divergence.

Abstract: System and method to align a substrate under a shadow mask. A substrate holder has alignment mechanism, such as rollers, that is made to abut against an alignment straight edge. The substrate is then aligned with respect to the straight edge and is chucked to the substrate holder. The substrate holder is then transported into a vacuum processing chamber, wherein it is made to abut against a mask straight edge to which the shadow mask is attached and aligned to. Since the substrate was aligned to an alignment straight edge, and since the mask is aligned to the mask straight edge that is precisely aligned to the alignment straight edge, the substrate is perfectly aligned to the mask.

Abstract: An arrangement for supporting substrates during processing, having a wafer carrier with a susceptor for supporting the substrate and confining the substrate to predetermined position. An inner mask is configured for placing on top of the substrate, the inner mask having an opening pattern to mask unprocessed parts of the substrate, but expose remaining parts of the substrate for processing. An outer mask is configured for placing on top of the inner mask, the outer mask having an opening that exposes the part of the inner mask having the opening pattern, but cover the periphery of the inner mask.

Abstract: A system for processing substrates in plasma chambers, such that all substrates transport and loading/unloading operations are performed in atmospheric environment, but processing is performed in vacuum environment. The substrates are transported throughout the system on carriers. The system's chambers are arranged linearly, such that carriers move from one chamber directly to the next. A conveyor, placed above or below the system's chambers, returns the carriers to the system's entry area after processing is completed. Loading and unloading of substrates may be performed at one side of the system, or loading can be done at the entry side and unloading at the exit side.

Abstract: A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having highly magnetic sputtering material provided on front surface thereof a magnet assembly operable to reciprocally scan across the length L in close proximity to rear surface of the target and the magnet assembly comprises: a back plate made of magnetic material; a first group of magnets arranged in a single line central to the back plate and having a first pole positioned to face the rear surface of the target; and, a second group of magnets provided around periphery of the back plate so as to surround the first group of magnets, the second group of magnets having a second pole, opposite the first pole, positioned to face the rear surface of the target.

Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.

Abstract: A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction. A mask is used to form the implanted shapes on the wafer, wherein the holes in the mask are oriented orthogonally to the direction of beamlet divergence.

Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

Abstract: A system is provided for etching patterned media disks. A movable electrode is utilized to perform sputter etch. The electrode moves to near or at slight contact to the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.

Abstract: A substrate processing system particularly suitable for fabricating solar cells. The system has a front end module transporting cassettes, each cassette holding a preset number of substrates therein; a loading module coupled to the front end module and having mechanism for loading substrates from the cassettes onto carriers; and a plurality of processing chambers coupled to each other in series, each having tracks for transporting the carriers directly from one chamber to the next; wherein selected chambers of the plurality of processing chambers comprise at least one combination source having a sputtering module and an evaporation module arranged linearly in the direction of travel of the carriers.

Abstract: A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having highly magnetic sputtering material provided on front surface thereof a magnet assembly operable to reciprocally scan across the length L in close proximity to rear surface of the target and the magnet assembly comprises: a back plate made of magnetic material; a first group of magnets arranged in a single line central to the back plate and having a first pole positioned to face the rear surface of the target; and, a second group of magnets provided around periphery of the back plate so as to surround the first group of magnets, the second group of magnets having a second pole, opposite the first pole, positioned to face the rear surface of the target.