Abstract: There is described-novel bonding and interconnecting techniques for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.

Abstract: Bonding and interconnect techniques including a spacer for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the tube resulting therefrom.

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A linear transport chamber includes linear tracks and robot arms riding on the linear tracks to linearly transfer substrates along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers.

Abstract: A system is provided for etching patterned media disks. A movable electrode is utilized to perform sputter etch. The electrode moves to near or at slight contact to the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.

Abstract: A system is provided for etching patterned media disks. A movable non-contact electrode is utilized to perform sputter etch. The electrode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.

Abstract: A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.

Abstract: Disclosed is a substrate processing system with a magnetic conduit configuration to improve the movement of a substrate carrier within the system. The configuration specifically provides for safe, secure movement of a carrier between multiple levels of a substrate processing system by using magnetic conduits to redirect magnetic forces created by a linear motor, permitting the linear motor to be positioned outside of the system and in a location that will not interfere with the movement of the carrier.

Abstract: A novel photocathode employing a rectifying junction is described that permits color imaging extending applications for photocathodes in a variety of instruments and night vision devices.

Abstract: An electrostatic chuck includes an angled conduit, or an angled laser drilled passage, through which a heat transfer gas is provided. A segment of the angled conduit and/or the angled laser drilled passage extends along an axis different from an axis of the electric field generated to hold a substrate to the chuck, thereby minimizing plasma arcing and backside gas ionization. A first plug may be inserted into the conduit, wherein a segment of a first exterior channel thereof extends along an axis different from an axis of the electric field. A first and second plug may be inserted into a ceramic sleeve which extends through at least one of the dielectric member and the electrode. Finally, the surface of the dielectric member may comprise embossments arranged at radial distances from the center of the dielectric member so as to improve heat transfer and gas distribution.

Abstract: An electrostatic chuck for holding a substrate has a circular dielectric member having a top surface configured to support the substrate, the top surface having a plurality of mesas consisting of n subsets, wherein mesas of each subset are distributed along one of a plurality of concentric bolt circles of increasing radii, and wherein all of the concentric bolt circles center about the center of the circular dielectric member.

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.

Abstract: Backthinning in an area selective manner is applied to CMOS imaging sensors 12 for use in electron bombarded active pixel array devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels of an active pixel array providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

Abstract: A dielectric etch chamber and method for improved control of plasma parameters. The plasma chamber comprises dual-frequency bias source that capacitively couples the RF energy to the plasma, and a single or dual frequency source that inductively couples the RF energy to the plasma. The inductive source may be modulated for improved etch uniformity.

Abstract: A valve assembly and method of actuating a valve blade in a processing chamber through the use of magnetic force coupling is disclosed. The valve assembly comprises a valve rod for imparting a reciprocal motion to a valve blade which opens and closes a valve, the valve rod having at least one magnet mounted thereupon. A housing seals the valve rod and valve blade from the ambient, and an actuator rod in the ambient, having at least one complementary magnet mounted thereupon, aligns with the magnet on the valve rod to form a magnetic coupling through the housing. An actuator mechanism then provides a reciprocal motion to the actuator rod, which transfers the motion through the magnetic coupling to the valve rod and valve blade. Multiple actuator mechanisms can also be employed to vary the force applied to the valve blade to further increase the life of the valve assembly while still providing a strong seal between processing chambers.

Abstract: Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

Abstract: There is described novel bonding and interconnecting techniques for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.

Abstract: Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

Abstract: Described is a cooling system for use in the manufacture of substrates into magnetic disk memory in which cooling plates are positioned dynamically in relation to a substrate to be cooled. This enables positioning the cooling plates closer for more effective cooling. Positioning is controlled by capacitive measurements between the cooling plates and the substrate to be cooled.

Abstract: This invention deals with the reduction in fixed pattern noise in backthinned CMOS imagers primarily for use in a vacuum environment. Reduction is achieved by effectively shielding the imager. This is done by depositing a conductive layer on the front surface prior to the attachment of a support member or by incorporating a conductive layer into the die at least extensive with the analog circuitry. This also may be achieved by leaving a void adjacent to the analog circuitry area. This void, filled with air or a vacuum specifies a low dielectric layer over critical analog circuitry. Finally there is extended across the die an adhesive or underfill material after which a support member is placed onto the underfill to provide structure to the die. The underfill and the support layer should have thermal coefficients of expansion that substantially match that of the silicon.

Abstract: There is described a back thinned sensor in which a material is added on the front surface to extend the wavelength of the sensor into wavelengths it normally does not reach. In the preferred embodiment, the back-thinned layer comprises silicon and is the base for a CMOS device or a CCD. The photocathode in a night vision device comprises in the preferred unit GaAs.