Abstract: A method for producing a silica sol containing a small amount of metal impurities and wherein colloidal silica having an elongated particle shape is dispersed in a solvent, by addition of a compound as an anion source and ammonia as an alkali source and heating of the resultant mixture at a predetermined temperature, includes the following steps: (a) preparing a raw material liquid by adding at least one compound as an anion source selected from the group of inorganic acids, organic acids, and ammonium salts of these acids, and ammonia to a silica sol as a raw material having SiO2 of 1% by mass to 30% by mass and a pH of 2 to 5 so the mass ratio of the compound to SiO2 is 0.5% to 1.9%; and (b) heating the raw material liquid prepared in step (a) at 80° C. to 200° C. for 0.5 hours to 20 hours.

Abstract: An isoxazoline-substituted benzamide compound, and the salt thereof. For example, a compound having the following formula: and pesticides characterized by containing the compound as an active ingredient.

Abstract: A composition for forming a resist underlayer film includes: a solvent; and a polymer containing a unit structure (A) represented by formula (1). The composition is reduced in the amount of sublimated substances that contaminate a device, is improved in the in-plane uniform coatability of a film to be coated thereon, exhibits satisfactory resistance to a chemical solution used in a resist under layer film, and can exhibit other satisfactory properties.

Abstract: A step substrate coating composition for efficiently forming a coating that is capable of filling and flattening a pattern. A step substrate coating composition comprising a compound (A) of a main agent, a crosslinking agent, and a solvent, the compound (A) including a partial structure expressed by formula (A-1) (where the broken line represents bonding with an aromatic ring, the aromatic ring forming a polymer skeleton or a monomer, and n represents an integer of 1-4).

Abstract: The laminate of the invention has a semiconductor substrate, a support substrate, a release layer disposed so as to come into contact with the semiconductor substrate, and an adhesive layer disposed between the support substrate and the release layer, characterized in that the release layer is a film formed from a releasing agent composition containing a polyorganosiloxane component essentially containing polydimethylsiloxane; the polyorganosiloxane component has a viscosity of 5.50 × 103 Pa·s to 0.75 × 103 Pa·s, as measured at 25° C.; and the film has a thickness of 0.01 µm to 4.90 µm.

Abstract: A composition for forming a resist underlayer film and a method for producing a resist pattern, the method using the composition for forming a resist underlayer film; and a method for producing a semiconductor device. A resist underlayer film-forming composition which contains an organic solvent and a polymer that has an end blocked with a compound (A), wherein: the polymer is derived from compound (B) that is represented by formula (11). (In formula (11), Y1 represents a single bond, an oxygen atom, a sulfur atom, an alkylene group having from 1 to 10 carbon atoms, the alkylene group being optionally substituted by a halogen atom or an aryl group having from 6 to 40 carbon atoms, or a sulfonyl group; each of T1 and T2 represents an alkyl group having from 1 to 10 carbon atoms; and each of n1 and n2 independently represents an integer from 0 to 4.

Abstract: For example, a triazine ring-containing polymer containing a repeating unit structure represented by formula (25) below, wherein Ra represents R102 or R103, R102 represents a fluorine atom or a fluoroalkyl group having 1 to 10 carbon atoms, and R103 represents a crosslinking group.

Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.

Abstract: An additive capable of suppressing generation of free water from a cement slurry even under a high temperature environment of 150° C. or more and a silica-based additive that suppresses, in a cement slurry for cementing in oil fields and gas oil fields, free water under high temperature and high pressure environments of 100° C. or more, the silica-based additive containing an aqueous silica sol containing nanosilica particles with a true density of 2.15 g/cm3 or more and less than 2.30 g/cm3, and a cement slurry for cementing that contains the silica-based additive.

Abstract: A lithographic process for the production of a semiconductor device has recently caused a problem in terms of generation of a sublime component (sublimate) derived from a low-molecular-weight compound (e.g., polymer resin, crosslinking agent, or crosslinking catalyst) during baking upon formation of a resist underlayer film from a resist underlayer film-forming composition. The resist underlayer film-forming composition of the present invention uses an organic acid having a fluoroalkyl group or an organic acid salt having a fluoroalkyl group, as a crosslinking catalyst, and thus the resist underlayer film-forming composition containing the crosslinking catalyst can effectively prevent generation of a sublimate derived from a low-molecular-weight component contained in the resist underlayer film during formation of the film.

Abstract: A protective film formation composition contains a polymer having a unit structure represented by formula (1-1), a compound or a polymer having phenolic hydroxy group other than catechol, (C) a thermal acid generator, and (D) a solvent. (Ar represents a benzene, naphthalene, or an anthracene ring; R1 represents a hydroxy, mercapto,amino, halogeno, or an alkyl group that has 1-10 carbon atoms and that may be substituted or interrupted by a hetero atom and may be substituted by a hydroxy group; n1 represents an integer of 0-3; L1 represents a single bond or an alkylene group having 1-10 carbon atoms; E represents an epoxy group; when n2=1, T1 represents a single bond or an alkylene group having 1-10 carbon atoms and may be interrupted by an ether bond, an ester bond, or an amide bond; and when n2=2, T1 represents a nitrogen atom or an amide bond.

Abstract: A method for producing a drug substance of crystalline pitavastatin calcium excellent in stability, is presented. In the production of a compound (pitavastatin calcium) represented by the formula (1): The water content is adjusted to a level of from 5 to 15%, and the crystal form is controlled to be crystal form A, thereby to obtain a drug substance excellent in stability.

Abstract: The present invention is directed to new crystalline forms of Pitavastatin hemicalcium salt, referred to hereinafter as polymorphic Forms A, B, C, D, E and F, as well as the amorphous form. Furthermore, the present invention is directed to processes for the preparation of these crystalline forms and the amorphous form and pharmaceutical compositions comprising these crystalline forms or the amorphous forms.

Abstract: A method for detecting impurities on a surface of a silicon wafer for manufacturing semiconductors, the impurities not being able to be detected by a conventional inspection method, a method for manufacturing the silicon wafer for manufacturing semiconductors having the impurities removed from the surface thereof, and a method for screening wafers for manufacturing semiconductors. This method for detecting impurities on a surface of a wafer for manufacturing semiconductors includes: a step for coating the surface of the wafer with a film-forming composition, and performing baking to form a film; and then a step for detecting impurities by means of a wafer inspection tool.

Abstract: An adhesive composition for forming an adhesive layer that can bond a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate in a peelable manner, the composition containing a component (A) which is cured through hydrosilylation and a peeling component (B) which contains a component containing an epoxy-modified polyorganosiloxane, wherein the component (A) contains a polysiloxane (A1) including a siloxane unit represented by SiO2 (unit Q) and the like, and a platinum group metal catalyst (A2); and the polysiloxane (A1) contains a polyorganosiloxane (a1) including a siloxane unit represented by SiO2 (unit Q?) and the like, and a polyorganosiloxane (a2) including a siloxane unit represented by SiO2 (unit Q?) and the like, and having a functional group (Si—H) content of 5.0 mol/kg or greater.

Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Abstract: A method for producing ammonia from nitrogen molecules, by supplying electrons from a power source, protons from a proton source, and nitrogen molecules from a device for supplying nitrogen gas, in the presence of a molecular catalyst and a solid catalyst at the cathode of a production apparatus that performs electrolysis. Regarding the molecular catalyst and the solid catalyst, bis(cyclopentadienyl)titanium dichloride, for example, is used as the molecular catalyst, and a metal catalyst, an oxide catalyst, or a combination thereof is used as the solid catalyst.

Abstract: A composition for forming a resist underlayer film that enables formation of an intended resist pattern, and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film includes: a compound represented by formula (1); a polymer; and an organic solvent. (In formula (1), Y1 represents a single bond, an oxygen atom, a sulfur atom, a halogen atom, or a C1-10 alkylene group which may be substituted with a C6-40 aryl group, or a sulfonyl group, T1 and T2 each represent a C1-10 alkyl group, R1 and R2 each independently represent a C1-10 alkyl group which is substituted with at least one hydroxy group, and n1 and n2 each independently represent an integer of 0-4).

Abstract: A method for producing ammonia involves producing ammonia from molecular nitrogen in a production apparatus for performing electrolysis by supplying electrons from a power source, protons from a proton source and molecular nitrogen from a device for supplying a nitrogen gas while in the presence of a solid catalyst and a complex in a cathode. For example, a molybdenum complex represented by formula (A1) or formula (B2) as the complex, and a platinum catalyst or a platinum catalyst/gold catalyst combination as the solid catalyst are used.

Abstract: A laminate having a semiconductor substrate, a support substrate, and an adhesive layer and a release layer disposed between the semiconductor substrate and the support substrate, wherein the release layer is a film formed from a releasing agent composition containing an organic resin, a branched-chain polysilane, and a solvent.