Abstract: Provided is a solid-state imaging device including a semiconductor substrate, a photoelectric conversion unit on the semiconductor substrate, and a recess of two or more steps formed on a surface on a light incident side of the semiconductor substrate, and further provided is a solid-state imaging device including a semiconductor substrate, a photoelectric conversion unit provided on the semiconductor substrate, and a light-shielding wall above the light incident side of the semiconductor substrate, in which the light-shielding wall includes a first portion having a first width extending in a direction substantially parallel to a light incident surface of the semiconductor substrate, and a second portion having a second width extending in a direction substantially perpendicular to the light incident surface, the second width being smaller than the first width, and the second portion is provided between the first portion and the semiconductor substrate.

Abstract: The present disclosure pertains to a device which has a circuitry that obtains image data of a scene being representative of a time of flight measurement of light reflected from the scene, wherein the image data is based on a pattern of light being illuminated on the scene, wherein the pattern of light includes high intensity light areas and low intensity light areas; obtains, based on the image data, first image data being representative of the high intensity light areas; obtains, based on the image data, second image data being representative of the low intensity light areas; estimates direct component image data based on the first image data and the second image data; and generates a depth map of the scene based on the direct component image data and the second image data.

Abstract: [Object] To provide a vehicle-mounted camera capable of successfully absorbing stress applied to a flexible board that connects a main board and an imaging device board to each other. [Solving Means] The vehicle-mounted camera includes an imaging device board, a main board, and a flexible board. The imaging device board includes a first terminal. The main board includes a second terminal. The flexible board includes a first connection portion to be connected to the first terminal, a second connection portion to be connected to the second terminal, and a first bending portion and a second bending portion that are located between the first connection portion and the second connection portion and are bent along a first bending axis and a second bending axis intersecting with each other in a developed state of the flexible board. The vehicle-mounted camera is capable of absorbing stress in any direction applied to the flexible board.

Abstract: An image sensor, electronic device and method thereof that performs on-sensor multiresolution deep neural network (DNN) processing, such as for gesture recognition. The image data is transformed into first resolution type image data and second resolution type image data. Based on detecting the first resolution type image data includes a predetermined object, processing the second resolution type image data using the second resolution type image data as input into the second DNN.

Abstract: A solid-state imaging element includes a first photoelectric conversion unit and a second photoelectric conversion unit. The first and second photoelectric conversion units are joined at joint surfaces facing each other, and include an upper electrode, a lower electrode, a photoelectric conversion film, and a storage electrode. The lower electrode of the first photoelectric conversion unit is connected to a charge storage unit via a first through electrode penetrating a semiconductor substrate. The lower electrode of the second photoelectric conversion unit is connected to the charge storage unit via: a second electrode provided on a joint surface of the second photoelectric conversion unit; a first electrode provided on a joint surface of the first photoelectric conversion unit; a second through electrode penetrating the first photoelectric conversion unit; and the first through electrode.

Abstract: A plurality of photoelectric converters is formed on a semiconductor substrate and performs photoelectric conversion according to incident light. A light path portion includes a transparent film through which the incident light is transmitted, a light-blocking wall for each of the plurality of photoelectric converters, the light-blocking wall partitioning the transparent film in a direction perpendicular to the semiconductor substrate, and blocking light, and a light-blocking film at an end of the light-blocking wall, the end being opposite to an end of the light-blocking wall that is closer to the semiconductor substrate, the light-blocking film having a film shape parallel to the semiconductor substrate, and including, for each of the plurality of photoelectric converters, an opening through which the incident light is transmitted.

Abstract: An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

Abstract: Provided are a semiconductor device in which an air gap structure can be formed in any desired region regardless of the layout of metallic wiring lines, a method for manufacturing the semiconductor device, and an electronic apparatus. A first wiring layer and a second wiring layer including a metallic film are stacked via a diffusion preventing film that prevents diffusion of the metallic film. The diffusion preventing film is formed by burying a second film in a large number of holes formed in a first film. At least the first wiring layer includes the metallic film, an air gap, and a protective film formed with the second film on the inner peripheral surface of the air gap, and the opening width of the air gap is equal to the opening width of the holes formed in the first film or is greater than the opening width of the holes.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes a stacked photoelectric converter for each of pixels. The stacked photoelectric converter has a plurality of photoelectric conversion elements stacked therein. The plurality of photoelectric conversion elements each has different wavelength selectivity. This solid-state imaging device further includes a plurality of data output lines from which pixel signals based on electric charges outputted from the photoelectric conversion elements are outputted. A plurality of data output lines is provided for each predetermined unit pixel column. The plurality of the data output lines is equal in number to an integer multiple of the photoelectric conversion elements stacked in the stacked photoelectric converter.

Abstract: The present technology relates to an information processing apparatus, an information processing method, a program, a mobile-object control apparatus, and a mobile object that make it possible to appropriately set the accuracy in detecting an object.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.

Abstract: The present technology relates to a solid-state imaging device and an electronic device enabling improvement of an SN characteristic. A solid-state imaging device includes a pixel array unit provided with multiple unit pixels. Each of the unit pixels includes: a small pixel having a first photoelectric conversion unit and a first on-chip lens configured to allow light to enter the first photoelectric conversion unit; and a large pixel having a second photoelectric conversion unit divided into multiple regions, and a second on-chip lens that can condense more light than the first on-chip lens and allows light to enter the second photoelectric conversion unit. The present technology may be applied to a CMOS image sensor.

Abstract: A circuitry for video image encoding, the circuitry being configured to encode an input video image based on a first set of convolutional kernels of a first neural network convolutional layer and a second set of convolutional kernels of a second neural network convolutional layer, wherein the first set of convolutional kernels is optimized with respect to object representation and the second set of convolutional kernels is optimized with respect to photometric representation.

Abstract: A semiconductor device includes a semiconductor substrate, a wiring layer including an electrode pad, the wiring layer formed on a first surface of the semiconductor substrate, a redistribution layer including wiring electrically connected to the electrode pad via a via, the redistribution layer formed on a second surface side opposite to the first surface of the semiconductor substrate, a protective film formed on a surface on a side opposite to the semiconductor substrate in the redistribution layer, and a partition formed by an insulating material, the partition arranged between pieces of wiring in the redistribution layer, in which the partition and a void are alternately formed between the pieces of wiring in a direction in which the wiring extends.

Abstract: An image sensor array includes a pixel circuit that generates a pixel output signal, wherein an amplitude of the pixel output signal is related to an intensity of detected light. The pixel circuit passes the pixel output signal to a data signal line for a selection period. A current control capacitor supplies a current to the data signal line through a first electrode in the selection period. A ramp generator generates a voltage ramp signal and passes the voltage ramp signal to a second electrode of the current control capacitor in the selection period.

Abstract: To prevent a decrease in a saturation charge when a phase difference signal is generated. A pixel includes a plurality of photoelectric conversion sections that is formed on a semiconductor substrate and performs photoelectric conversion of incident light from a subject to generate a charge. An intra-pixel separator separates the plurality of photoelectric conversion sections. An overflow path in the intra-pixel separator transfers charges overflowed in the plurality of photoelectric conversion sections to each other. An overflow gate in the pixel and adjusts a potential of the overflow path. A pixel separator is disposed at a boundary between the pixels. A charge holding section holds the generated charge. A charge transfer section is disposed one-by-one for the plurality of photoelectric conversion sections and transfers the generated charge to the charge holding section. An image signal generating section generates an image signal on the basis of the generated charge.

Abstract: A light detection element includes a substrate on which a plurality of light reception units is arranged in pixel units, and a filter formed over a plurality of adjacent pixels on the substrate, the filter that cuts visible light and transmits infrared light.

Abstract: A solid-state imaging device includes a first semiconductor layer, a second semiconductor layer, and an external terminal. The first semiconductor layer has a pixel region in which a plurality of pixels is arranged, and a peripheral region provided around the pixel region. The second semiconductor layer is stacked on the first semiconductor layer, and is provided with a pixel circuit coupled to the pixels. The external terminal is provided in an opening that communicates with the second semiconductor layer from the peripheral region in the first semiconductor layer. A first isolator is provided in the first semiconductor layer within the peripheral region, and surrounds at least a portion of an outer periphery of the opening. A second isolator is provided in the second semiconductor layer within a region corresponding to the peripheral region, and surrounds at least a portion of the outer periphery of the opening.

Abstract: An image sensor according to the present technology includes: a semiconductor substrate in which a plurality of pixels each having a photoelectric conversion element is two-dimensionally arranged; and a magnetic detection unit configured to detect a magnetic change according to a change in a relative position with respect to an imaging lens that guides light from a subject to the pixels.

Abstract: A pixel circuit includes a photoreceptor module. The photoreceptor module includes a photoelectric conversion element. The photoreceptor module outputs a photoreceptor signal with a voltage level depending on a detector current generated by the photoelectric conversion element. A voltage memory capacitor receives the detector signal at a first electrode. A latch comparator circuit receives a latch input signal based on a shifted voltage signal tapped from a second electrode of the voltage memory capacitor.