Abstract: A row driver assembly includes a row driver unit. The row driver unit includes a buffer circuit that drives a control signal to a pixel circuit. The buffer circuit is electrically connected to a high buffer supply voltage and to a low buffer supply voltage. A voltage converter circuit supplies the low buffer supply voltage to the buffer circuit. An error detection circuit outputs an active error signal when the low buffer supply voltage is outside a target voltage window.

Abstract: Wavelength determining image sensors and systems are provided. A sensor as disclosed includes a number of pixels disposed within an array, each of which includes a plurality of sub-pixels. Each wavelength sensing pixel within the image sensor is associated with a set of diffraction features disposed in a plurality of diffraction element layers. The diffraction features can be formed from materials having an index of refraction that is higher than an index of refraction of the surrounding material. At least one of the diffraction element layers is formed in a grating substrate on a light incident side of a sensor substrate. Wavelength information regarding light incident on a pixel is determined by applying ratios of signals obtained from pairs of included sub-pixels and calibrated ratios for different wavelengths to a set of equations. A solution to the set of equations provides the relative contributions of the calibrated wavelengths to the incident light.

Abstract: An imaging device in which noise can be reduced, and an electronic device using this device. The imaging device includes a light receiving element, and a read circuit. A field effect transistor in the read circuit has a semiconductor layer in which a channel is formed, a gate electrode that covers the semiconductor layer, and a gate insulating film disposed between the semiconductor layer and the gate electrode. The semiconductor layer has a main surface, and a first side surface on one end side of the main surface in a gate width direction of the field effect transistor. The gate electrode has a first portion that faces the main surface via the gate insulating film, and a second portion that faces the first side surface via the gate insulating film. A crystal plane of the first side surface is a plane or a plane equivalent to the plane.

Abstract: Color image sensors and systems are provided. A sensor as disclosed includes a plurality of color sensing pixels disposed within an array, each of which includes a plurality of sub-pixels. Each color sensing pixel within the image sensor is associated with a set of diffraction features disposed in a plurality of diffraction element layers. The diffraction features can be formed from materials having an index of refraction that is higher than an index of refraction of the surrounding material. At least one of the diffraction element layers is formed in a grating substrate on a light incident side of a sensor substrate. Color information regarding light incident on a pixel is determined by applying ratios of signals obtained by pairs of included sub-pixels and calibrated ratios for different colors to a set of equations. A solution to the set of equations provides the relative contributions of the calibrated colors to the incident light.

Abstract: Image sensing devices are disclosed. In one example, an image sensing device includes a pixel unit cell with both event sensing (EVS) pixels and imaging pixels. The EVS and imaging pixels are configured to include event sensing and imaging pixel transistors formed in the same transistor layer of an integrated circuit assembly that also includes the photodiodes of the EVS and imaging pixels. The photodiodes are separated by a rear deep trench isolation (RDTI), and the EVS and imaging pixel transistors are arranged along (e.g., underneath) boundary areas formed by the RDTI, maximizing the space available for the photodiodes and economizing on wiring requirements for the EVS and imaging pixels.

Abstract: [Object] It is possible to further improve reliability. [Solution] There is provided a display device including: a pixel unit which is configured with a plurality of pixel circuits arranged in a matrix, each of the pixel circuits including a light emitting element and a driving circuit for driving the light emitting element; scanning lines which are interconnections connected to the respective pixel circuits and are provided to extend in a first direction and correspond to respective rows of a plurality of the pixel circuits; and signal lines which are interconnections connected to the respective pixel circuits and are provided to extend in a second direction orthogonal to the first direction and correspond to respective columns of a plurality of the pixel circuits. One of the scanning lines and the signal lines, provided for the one pixel circuit, which is larger in number is positioned in a lower-level interconnection layer.

Abstract: An information processing apparatus and an information processing method to properly acquire a location of a surrounding vehicle using three-dimensional detection information regarding an object around an own vehicle. A camera captures an image of surroundings of an own automobile, and a region of a vehicle in the captured image is detected as a frame, the vehicle being in the surroundings of the own automobile. Three-dimensional information regarding an object in the surroundings of the own automobile is detected, and a three-dimensional box that indicates a location of the vehicle in the surroundings of the own automobile is generated on the basis of the three-dimensional information. Correction is performed on the three-dimensional box on the basis of the frame, and the three-dimensional box is arranged to generate surrounding information.

Abstract: The present invention relates to a semiconductor device and an electronic device that facilitate calibration and can obtain favorable characteristics. The semiconductor device includes a substrate, a millimeter wave antenna provided on the substrate, and an image sensor provided on the substrate, in which an antenna surface of the millimeter wave antenna and a light receiving surface of the image sensor are disposed at spatially partitioned positions. The present technology can be applied to a sensor module.

Abstract: There is provided an information processing device that processes detection information of an external recognition sensor. The information processing device includes: a recognition unit that performs recognition processing on an object on the basis of a detection signal of the sensor; and a processing unit that performs fusion processing on first data before the recognition by the recognition unit and another data. The information processing device further includes a second recognition unit that performs recognition processing on the object on the basis of a detection signal of a second sensor. The processing unit performs fusion processing on third data before the recognition by the second recognition unit and the first data, fusion processing on fourth data after the recognition by the second recognition unit and the first data, and the like.

Abstract: Technology advantageous for acquiring a high-quality image with a small device configuration is provided. An imaging element includes: a pixel substrate including an image sensor; a cover body facing the image sensor, the cover body being transmissive; a diffractive lens having a plurality of protruding lens portions protruding from the cover body toward the image sensor, in which a space is provided between the plurality of protruding lens portions.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: A semiconductor device that can be manufactured with higher accuracy and higher yield without the need of a complicated process, a method for manufacturing a semiconductor device, and an electronic device including the semiconductor device are disclosed. A configuration includes: a first package including a die of an integrated circuit, a protective film on an upper surface of the die, the protective film being larger in area than the die, a first molding material covering an outer periphery of the die, a plurality of through mold vias penetrating the first molding material and the protective film, a seed layer on upper end portions and peripheral side surfaces of the through mold vias, and an external connection terminal connected to lower end portions of the through mold vias; and a second package on an upper surface of the protective film of the first package and connected to the upper end portions of the through mold vias.

Abstract: Provided is an imaging device capable of further suppressing color mixing between pixels. The imaging device includes: a semiconductor substrate provided with a photoelectric conversion unit for each of pixels two-dimensionally arranged; a color filter provided for each of the pixels on the semiconductor substrate; an intermediate layer provided between the semiconductor substrate and the color filter; and a low refraction region provided between the pixels by separating at least the color filter and the intermediate layer for each of the pixels, the low refraction region having a refractive index lower than a refractive index of the color filter.

Abstract: Solid-state imaging elements are disclosed. In one example, an upstream circuit block generates a predetermined reset level and a plurality of signal levels each corresponding to an exposure amount, and causes capacitive elements, different from each other, to hold them. A selection circuit sequentially performs control to connect the capacitive element in which the reset level is held to a predetermined downstream node, control to disconnect capacitive elements from the downstream node, and control to connect the capacitive element in which any of the plurality of signal levels is held to the downstream node. A downstream reset transistor initializes a level of the downstream node when the capacitive elements are disconnected from the downstream node. A downstream circuit sequentially reads the reset level and the plurality of signal levels via the downstream node.

Abstract: A communication device includes a communication unit configured to transmit a serial signal group conforming to a serial peripheral interface (SPI) and transmitted from a master in synchronization with a clock to a communication partner device as a batch of data blocks within one frame period of a predetermined communication protocol, or transmit the serial signal group to the communication partner device as a plurality of data blocks divided according to a plurality of frame periods.

Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: The present technology relates to a solid-state imaging element, a solid-state imaging element package, and electronic equipment that can suppress occurrence of flares. The solid-state imaging element includes an effective pixel region and a peripheral circuit region. The effective pixel region includes a plurality of pixels arranged two-dimensionally in a matrix pattern. The peripheral circuit region is provided around the effective pixel region. The effective pixel region has a pixel-to-pixel light-shielding film formed at boundary portions between the pixels. In a region on a substrate where a rib structure is formed within the peripheral circuit region, no light-shielding film is formed in the same layer as the pixel-to-pixel light-shielding film. The present technology is applicable, for example, to a solid-state imaging element package including a cover glass that protects a light-receiving surface of the solid-state imaging element.

Abstract: An imaging device including: a first semiconductor substrate; a second semiconductor substrate; and a wiring layer. The first semiconductor substrate has a first surface and a second surface and includes a sensor pixel. The second semiconductor substrate has a third surface and a fourth surface and includes a readout circuit that outputs a pixel signal based on an output from the sensor pixel. The second semiconductor substrate is stacked on the first semiconductor substrate with the first surface and the fourth surface opposed to each other. The wiring layer is between the first semiconductor substrate and the second semiconductor substrate and includes a first wiring line and a second wiring line that are electrically coupled to each other. One of the first wiring line and the second wiring line is in an electrically floating state while the other is electrically coupled to a transistor.

Abstract: A receiving apparatus includes a packet type determination unit that determines whether or not a TLV packet includes a compressed IP packet, a context information determination unit that determines a context identifier and a context identification header type of the TLV packet determined to include the compressed IP packet, a CID-header storage unit that stores a source IP address assigned to the context identifier, a fixed header information storage unit that stores fixed header information in conformance with an operation specification of a broadcast wave, and a header restoring unit that generates a restored IP packet by decompressing the compressed data in accordance with the TLV packet determined to include the compressed IP packet, the source IP address acquired from the CID-header information storage unit on the basis of the context identifier, and the fixed header information acquired from the fixed header information storage unit.

Abstract: A signal processing device includes an approximate curved surface conversion unit that includes a first stacked autoencoder pretrained on the basis of learning input data constituted by coordinate data acquired for each of multiple elements of an object, and that obtains approximate curved surface data indicating an approximate curved surface of the object in an intermediate layer of the first stacked autoencoder, on the basis of input data constituted by the coordinate data acquired for each of the elements, and a geometric modulation processing unit that includes a second stacked autoencoder having learned by machine learning on the basis of learning input data constituted by the approximate curved surface data and on the basis of training data constituted by a result obtained by coordinate conversion for each of the elements in a geometric modulation process performed for the object, and performs the geometric modulation process.