Patents Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION
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Patent number: 11973480Abstract: To achieve higher self-resonant frequency and lower parasitic resistance of a variable capacitance circuit whose capacitance value is changeable. The variable capacitance circuit includes a capacitor unit, a reactive element, and a bias circuit. The capacitor unit inside the variable capacitance circuit includes plural semiconductor elements connected in series, the plural semiconductor elements each having a capacitance value based on a bias voltage applied thereto. Further, the reactive element inside the variable capacitance circuit is connected to the capacitor unit. The bias circuit inside the variable capacitance circuit applies a bias voltage to each of the plural semiconductor elements.Type: GrantFiled: July 17, 2019Date of Patent: April 30, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Hiroaki Nagano
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Patent number: 11973314Abstract: An abnormality of output laser light is detected for enhancement in safety. A light-source drive device includes a light-source control unit, a light-receiving unit, and an abnormality detection unit. The light-source control unit included in the light-source drive device controls light emission of a light source. The light-receiving unit included in the light-source drive device receives light from the light source through an output part allowing outward output of light of the light source. The abnormality detection unit included in the light-source drive device detects an abnormality of the light output from the output part, on the basis of the received light.Type: GrantFiled: August 23, 2019Date of Patent: April 30, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hayato Kamizuru, Katsuhisa Daio, Takeshi Yuwaki, Akihito Kamiegawa, Naoki Masumitsu
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Publication number: 20240136491Abstract: A light emitting device includes a substrate and a light emitting body. The light emitting body includes a plurality of light emitting elements and an insulating body in which the plurality of light emitting elements is embedded except for a light emitting surface of the plurality of light emitting elements. The plurality of light emitting elements is formed from a singulated compound semiconductor layer and is arranged in a row direction and a column direction. The substrate includes a drive circuit, a first terminal, and a second terminal and is joined to the light emitting body. The drive circuit drives the plurality of light emitting elements. The first terminal and the second terminal electrically couple the drive circuit and the plurality of light emitting elements to each other.Type: ApplicationFiled: February 21, 2022Publication date: April 25, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshihiro MIURA, Toshiaki HASEGAWA, Toru SASAKI, Hiroyuki KASHIHARA
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Publication number: 20240134014Abstract: An electronic device comprising circuitry, the circuitry comprising a mix driver (MVD) for providing a modulation In signal to pixels of a time of flight pixel chip (P500), and at least one Save and Share current circuitry (51, S2) connected to the mix driver (MVD), wherein the Save and Share circuitry (S1, S2) is configured to save charge provided by a power supply (VDD) in a capacitor (CS1, CS2) and to share the saved charge to the pixels of the time of flight pixel chip (P500). A logic chip (L500) comprises an input (l_in) and a buffer block (CLT500), where a modulation signal (GDA) is supplied to the input (1_in) and is delivered to the pixel chip (P500) via the buffer block (CLT500). Capacitors (CS1, CS2) help the mix driver (MVD) with the charging and discharging, respectively, of the pixel units in the pixel chip (P500). Frequencies used for the modulation signal (GDA) may be in the range of several tens of MHz to several hundreds of MHz.Type: ApplicationFiled: February 10, 2022Publication date: April 25, 2024Applicant: Sony Semiconductor Solutions CorporationInventors: Cecilia GIMENO, Qing DING
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Publication number: 20240136378Abstract: An imaging device of an embodiment of the disclosure includes: a semiconductor substrate in which multiple sensor pixels are arranged in array, the semiconductor substrate having a first surface serving as a light incident surface and a second surface opposed thereto; a photoelectric conversion section provided on a side of the first surface inside the semiconductor substrate and generating electric charge corresponding to a light reception amount by photoelectric conversion; a charge-holding section provided on a side of the second surface inside the semiconductor substrate and holding the electric charge transferred from the photoelectric conversion section; a first light-blocking section extending in an in-plane direction of the semiconductor substrate between the photoelectric conversion section and the charge-holding section; and a light-condensing optical system provided on the side of the first surface and condensing incident light on a substantial geometric center of the first light-blocking section iType: ApplicationFiled: January 25, 2022Publication date: April 25, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Yilun HE
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Publication number: 20240134089Abstract: A solid-state imaging device with high versatility having a cavity-less CSP structure capable of reducing the occurrence of flare and also being applied to chip size reduction, a method for manufacturing a cover glass, and an electronic apparatus. A solid-state imaging device includes: a sensor substrate in which a plurality of pixels is arranged; a semiconductor substrate having an upper surface on which the sensor substrate is mounted, the semiconductor substrate being configured to connect an electric signal converted by the pixel to a bump or an external connection terminal disposed on a lower surface; a microlens array disposed on an upper surface of the sensor substrate; a resin disposed on an upper surface of the microlens array; and a cover glass bonded to the microlens array via the resin and having a moth-eye structure on a surface of the cover glass.Type: ApplicationFiled: February 25, 2022Publication date: April 25, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Katsunori TAKAHASHI, Shoichi HIROOKA
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Publication number: 20240136377Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.Type: ApplicationFiled: December 29, 2023Publication date: April 25, 2024Applicant: Sony Semiconductor Solutions CorporationInventors: Hiroaki Ishiwata, Sanghoon Ha
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Publication number: 20240137668Abstract: A pixel substrate includes a photoelectric conversion element. The photoelectric conversion element includes a doped region and a substrate region. The doped region and the substrate region form a pn junction. A pixel circuit is electrically connected to a first supply line and the photoelectric conversion element. A protection circuit is configured to short-circuit the first supply line and the substrate region when a voltage difference between the first supply line and the substrate region falls below a negative threshold voltage.Type: ApplicationFiled: February 17, 2022Publication date: April 25, 2024Applicant: Sony Semiconductor Solutions CorporationInventors: Tohid MORADI KHANSHAN, Naoki KAWAZU
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Publication number: 20240136371Abstract: A solid-state imaging element having an array of light receiving pixels is disclosed. A light receiving pixel includes a pair of photoelectric conversion units, a first separation region, and a second separation region. The pair of photoelectric conversion units is disposed adjacent to each other and has a shared floating diffusion (FD). The first separation region surrounds the pair of photoelectric conversion units. The second separation region is disposed between the pair of photoelectric conversion units. The first separation region has a rectangular shape in plan view and extends from a surface on the opposite side to a light incident surface of the semiconductor layer toward the light incident surface. The second separation region is disposed along a diagonal line of the first separation region extends from the surface on the opposite side to the light incident surface of the semiconductor layer toward the light incident surface.Type: ApplicationFiled: January 25, 2022Publication date: April 25, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tatsuya OKAWA, Yosuke SATAKE
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Publication number: 20240134053Abstract: The present disclosure generally pertains to time-of-flight data generation circuitry, configured to: acquire a time-of-flight (ToF) data stream using a ToF camera; acquire a brightness change event data stream using an event-based vision sensor (EVS), camera; correlate the time-of-flight data stream with the brightness change event data stream in time with each other for generating at least one time-of-flight data frame; and generate the at least one time-of-flight data frame based on the correlation.Type: ApplicationFiled: February 25, 2022Publication date: April 25, 2024Applicant: Sony Semiconductor Solutions CorporationInventors: Stefan ISLER, Valerio CAMBARERI
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Patent number: 11965970Abstract: A light receiving element and a ranging system is provided which achieve improvement of pixel characteristics while allowing variation in a breakdown voltage of an SPAD. The light receiving element includes a pixel array in which a plurality of pixels is arranged in a matrix, and a pixel driving unit configured to control respective pixels of the pixel array to be active pixels or non-active pixels. The pixel includes an SPAD, a transistor connected to the SPAD in series, an inverter configured to output a detection signal indicating incidence of a photon on the SPAD, a first transistor which is switched on or off in accordance with control of the pixels to be the active pixels or the non-active pixels, and a second transistor connected to the first transistor in series.Type: GrantFiled: August 16, 2019Date of Patent: April 23, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Tatsuki Nishino
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Patent number: 11968462Abstract: The present disclosure relates to a solid-state image pickup apparatus, a correction method, and an electronic apparatus, enabled to suppress an apparent uncomfortable feeling of an image output from a solid-state image pickup apparatus in which pixels of different OCL shapes are mounted mixedly. A solid-state image pickup apparatus according to an aspect of the present disclosure includes a pixel array in which a first pixel in which an OCL (On Chip Lens) of a standard size is formed and a second pixel in which an OCL of a size different from the standard size is formed are present mixedly, and a correction section that corrects a pixel value of the first pixel that is positioned in the vicinity of the second pixel among the first pixels on the pixel array. The present disclosure can be applied to, for example, a CMOS image sensor.Type: GrantFiled: February 16, 2023Date of Patent: April 23, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeru Tsuzuki, Katsumi Nishikori
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Patent number: 11965754Abstract: Provided is an information processing apparatus that creates map information on the basis of sensor information obtained by an on-vehicle sensor. The information processing apparatus includes a creation section that creates a map of a surrounding area of a mobile body on the basis of sensor information acquired by one or more sensors mounted on the mobile body, a request section that issues an information request to an external apparatus on the basis of a state of the map created by the creation section, and a merge section that merges information acquired by the request section from the external apparatus with the created map. The request section issues an information request to the external apparatus on the basis of a condition of a dead angle included in the map created by the creation section.Type: GrantFiled: January 15, 2020Date of Patent: April 23, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Noribumi Shibayama
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Patent number: 11968846Abstract: A photoelectric conversion element according to an embodiment of the present disclosure include a first electrode, a second electrode opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and formed using a plurality of materials having average particle diameters different from each other, the plurality of materials including at least fullerene or a derivative thereof, and a particle diameter ratio, of a first material having a smallest average particle diameter among the plurality of materials with respect to a second material having a largest average particle diameter among the plurality of materials, is 0.6 or less.Type: GrantFiled: May 2, 2022Date of Patent: April 23, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Shingo Takahashi
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Publication number: 20240127042Abstract: An edge device (20) that is an example of an information processing device of an embodiment according to the present disclosure includes a transmitting section that transmits, to a server device (10) that generates a neural network, information related to a processing capability for processing the neural network supplied from the server device (10), wherein the information related to the processing capability includes at least one of capacity information of the neural network, filter size information of a favorite convolutional neural network, hardware architecture type information, chip information, and device model number information.Type: ApplicationFiled: February 16, 2022Publication date: April 18, 2024Applicant: Sony Semiconductor Solutions CorporationInventors: Hirotaka ISHIKAWA, Kota YONEZAWA
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Publication number: 20240128293Abstract: There is provided an imaging device including: a semiconductor substrate including a photoelectric conversion section provided for each of pixels that are two-dimensionally arranged, in which the photoelectric conversion section performs photoelectric conversion on incident light; and an uneven structure provided on a light-receiving-side principal surface of the semiconductor substrate, in which the uneven structure includes a plurality of pillars arranged at a period shorter than a wavelength of light belonging to a visible light band.Type: ApplicationFiled: July 15, 2020Publication date: April 18, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Itaru OSHIYAMA, Ryo OGATA
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Publication number: 20240128220Abstract: The present disclosure relates to a semiconductor device capable of reducing design load. Provided is a semiconductor device including: a first substrate; and a second substrate bonded to the first substrate with a bonding portion where a bump is bonded, in which the bump pairs up with a predetermined function to constitute a unit. The present disclosure is applicable to, for example, a photodetection device such as a solid-state imaging device.Type: ApplicationFiled: January 5, 2022Publication date: April 18, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Akihiko MURASHIMA
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Publication number: 20240128284Abstract: A solid-state imaging device including: a semiconductor substrate having a first surface and a second surface opposed to each other, and including a photoelectric converter provided for each of pixel regions; an impurity diffusion region provided, for each of the pixel regions, in proximity to the first surface of the semiconductor substrate; and a contact electrode embedded in the semiconductor substrate from the first surface, and provided over and in contact with the impurity diffusion regions each provided for each of the pixel regions adjacent to each other.Type: ApplicationFiled: December 22, 2023Publication date: April 18, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Hironobu FUKUI
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Patent number: 11961864Abstract: Provided is an imaging device in which the degree of freedom in the layout can be improved. The imaging device includes a first substrate part that includes a sensor pixel to perform photoelectric conversion, and a second substrate part that is disposed on one surface side of the first substrate part and that includes a reading circuit to output a pixel signal based on an electric charge outputted from the sensor pixel. The second substrate part includes a first semiconductor substrate on which a first transistor included in the reading circuit is disposed, and a second semiconductor substrate which is disposed on one surface side of the first semiconductor substrate and on which a second transistor included in the reading circuit is disposed.Type: GrantFiled: April 24, 2020Date of Patent: April 16, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Shinichi Yoshida
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Patent number: 11961863Abstract: An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.Type: GrantFiled: September 4, 2019Date of Patent: April 16, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yuya Kumagai, Shuji Manda, Shunsuke Maruyama, Ryosuke Matsumoto